intemational ae zeR] Rectifier IRF540 HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Rpg(on) = 9.0772 Simple Drive Requirements Voss = 100V Ip = 284 Description Third Generation HEXFETs from Intemational Rectiior provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commerciatindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter | Max. Units lo@ Tc=25°C__| Continuous Drain Current, Vas @ 10 | 28 lo @ Te 00°C _| Continuous Drain Current, Vas @ 10 V { 20 A tow [Pulsed Drain Current © _ { 110 Pp @ Te = 25°C _| Power Dissipation Linear Derating Factor Ves Gatte-to-Source Voltage Eas Single Pulse Avalanche Energy @ lan _____ [Avalanche Current © : Ean Repetitive ‘Avalanche Energy D 16 dviat Peak Diode Recovery dvidt © 55 Ts Operating Junction and “$5 to +175 Tsra, Storage Temperature Range ‘Soldering Temperature, for 10 seconds 300 (1.6mm from case) ‘Mounting Torque, 6-32 or M3 serew 10 Toten (1.4 Nem) Thermal Resistance Parameter Min, auc Junction-to-Case = Recs Case-to-Sink, Flat, Greased Surlace = Pasa Junction-to-Ambient = 49IRF540 TGR Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min_ | Typ. | Max. | Units Test Conditions Visrjoss___| Drain-to-Souree Breakdown Vollage | 100 | — | — | V_|Vas-0V, lo= 250uA ‘AVienoss/ATs| Breakdown Vollage Temp. Coafficient_| — | 0.13 | — | VPC | Reference to 25°O, Io= 1mA Frosion) Slatic Drain-to-Source On-Resistance_| — | — [0.077| @ |Ves=10V, l=17A © Vestn (Gate Threshold Vortage 2.0 | — [4.0 | V_ [VoseVas, lo= 25014 Se Forward Transconductance 67 | — | — | S |Vosc50V, lo=17A © : —l|-|]% Vos=100V, Ves=0V loss Drain-to-Source Leakage Current Taso]! Weesov, vescov, Tais0e ie Gate-to-Source Forward Leakage — [= [i005 Gate-to-Source Reverse Leakage = = F100 Op Total Gate Charge = [= T Qos Gate-to-Source Charge = [=a] re ‘Qua Gate-to-Drain ("Miller") Charge —][- |] 2 L |OV See Fig. 6 and 13. © exer) Turn-On Delay Time = Tn T= ‘Voo=50V 1% Rise Time a exo Tumn-Off Delay Time = [3 [= Ro=8.12 tt Fall Time = [a [— Ro=2.90 See Figure 10 bo Internal Drain Inductance —|as]— Fray nH from package bs Internal Source Inductance REE HEE Pipeint Sut Cis Input Capacitance = i700, — Coss Output Capacitance = [560 [| =| pF Cass Reverse Transfer Capacitance — | 120 [| — Jf=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter ‘Min, | Typ. | Max. | Units ‘Test Conditions Continuous Source Current Gre (eee ioe MOSFET symbol ° (Body Diode) ‘A. | Showing the 4 ton Pulsed Source Current Preece ey integral reverse Wd ("11 (Body Diode) © -n junction diode. is — [25 | V | T25°C, lse28A, Vos-0V © te Reverse Recovery Time = [180 [360 [ns _|7.=25°0, i178 Qn Reverse Recovery Charge = [43 [28 [uc |aict-100As © ton Forward Tum-On Time Tntinsic turn-on ime Is neglogible (turn-on is dominated by Ls#L) Notes: ® Repetitive rating; pulse width limited by © Isp228A, dildt=170A/us, VoosVierp0ss, ‘max, junction temperature (See Figure 11) Tys175°C ® Vpp=25V, starting T=25°C, L=440yH Pulse wiath < 300 js; duty cycle <2%. Ra=250, las=28A (See Figure 12) 160Ip, Drain Current (Amps) Jp, Orain Current (Amps) wt 108 sot Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25°C Vpg = 50V 20us PULSE WIDTH| | rr rn eee see ee) Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics IRF540 ef Ip, Drain Current (Amps) wot 20us PULSE WIOTH To = 175°C 10° sof Vos; Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=175°C 3.9 8 ips ae = 2 ast 3 & 6 = 29 os ee Bis QE $5 22 f= 14 5 6 Zoos g eee veg = 100 SGg=aE=T-OEO-AT BOBO TOO TED HAOTED Tee Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance 18 Vs. TemperatureIRE540 Capacitance (pF) Isp, Reverse Drain Current (Amps) 2a Wag > Ov, 1 > ive ves = Coa Coss = Cas + Coa Csss = Cys * Sg) Cas SHORTED| 1209 ) 0 | i Vps, Drain-to-Source Voltage (volts) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Yes = OV Ts oF Te Vsp, Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage Ves, Gate-to-Source Voltage (volts) Ip, Drain Current (Amps) ore FOR TEST CIRCUIT SEE FIGURE 13 30 203008 Qg, Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs: Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY Bos (on ien25%e 19047500 [stwcue Purse| 70 Be Saye See Vps, Drain-to-Source Voltage (volts) 3 snes 108 Fig 8. Maximum Safe Operating Area 152IRF540 Ri Palko Wes < 1H8 Duty Factor 0.1% Ip, Drain Current (Amps) a er a a To, Case Temperature (°C) en ton Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature Thermal Response (Zajc) l I Sel SINSLE PULSE 7 feel ores Crvermat sesporse) HTL ory racton, o=tase2 2. PEAK Ty=Pou ® Zenge + Te wo ww 1 ow O14 1 10 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 153IRF540 [TeR] ay pte obtain tocol ns i fe 5 . vt “Vo Bee ae € | £ : | Bel a Fig 12a. Unclamped Inductive Test Circuit 3 ad ro 2 | Vearjoss em { gOS S Vpo ae [Yoo = 254 | = vs : ne 3B 50, 7S 100 425 150 175, Starting Ty, Junction Temperature(*C) bs — — Sactestoeias Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms vei bran Current caren Reguetr ies ae EN enw fring Ratna Fig 13a. Basic Gate Charge Waveform Fig 13b, Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing - See page 1509 Appendix C: Part Marking Information - See page 1516 International Appendix E: Optional Leadforms — See page 1525 TeR] Rectifier