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To realize such a small cut-o frequency the capacitor C1
R2
VTH − must be around the F and cannot be implemented on-chip.
C1 CP1 VOH
R1
+ The amplier must be able to drive the resistive feedback
− C2
network and must have a low current consumption. In liter-
AMP ature many solutions [4, 7, 10, 5, 11] have been implemented
from IR
sensor + VO
− to solve this problem.
CP1 VOL
+ SM VTL +
VR M6 M7
SP IB
CP1 VSM 2 IB
VP −
CKG
VB
M9 M10
vin- M1 M2 vin+ vout
VH PU
IC − v1
M12
VL
CP2 CK
VCK
+
PD M3 M4 M8 M11
CCK M5
ID
Figure 1: Schematic diagram of the ASIC's analog Fig. 2 shows the schematic circuit of the amplier used. Its
part. architecture is similar to the Miller OTA but has a second
stage with active bias. The active bias of transistor M6 is
performed by means of the voltage VB -V1 across the gate-
The signal processor pre-amplies the IR sensor signal and source voltages of transistors M8 and M9 . The constant
detects if it has the characteristics (amplitude and frequency) voltage VB is generated by means of the three diode con-
to be considered a valid alarm. The clock generator creates nected transistors M11 =M4 , M12 =M8 and M10 =M9 . With-
the clock needed by the digital part of the ASIC. The power out signal the same amount of current
ows through M5 and
M6 . When a signal is applied and the rst stage output V1
supply monitor detects when the battery charge is low and goes down, the voltage VB -V1 increases, as well as the cur-
must be changed. rent
owing through them (and, consequently, through M6 ).
Due to power consumption specications, each of these parts The output current I6 -I5 varies exponentially according to
required specic circuit solutions. the voltage V1 (because of the control by means of the gate-
source voltages of M5 , M8 and M9 ). In this way the ampli-
er can drive very high current not only as a sink (through
3.1 Signal Processor M5 ), like the Miller OTA, but also as a source (through
The signal processor consists of two blocks: a processing and M6 ). This behaviour allows for a very small bias current.
a detection unit. The rst (AMP with feedback network) The current is increased only when needed. In this manner
acts as: (a) an interface with the high impedance IR sensor it is possible to drive the load of the feedback network.
output; (b) a lter to remove very low frequency compo-
nents (less than 0.3 Hz) and higher frequency interference; In principle the amplier must be stable in every working
(c) an amplier to make the signal suitable for detection. condition. In our application the amplier is used only in a
The second is a window comparator. closed loop conguration, so open loop stability is not really
needed. From this observation we can Ælimit the power con-
To meet the requirements the IR sensor is directly connected sumption even further: setting the 60 phase margin limit
to the non-inverting input of the amplier. Amplication is to only closed loop gain greater than 10, we can use a bias
performed through a resistive feedback network R1 and R2 current IB of only 100 nA, thus reducing the power con-
while C1 determines the low cut-o frequency (0.15 Hz). sumption.
The high cut-o frequency is determined by the inner ca-
pacity of the AMP. The capacitor C2 removes the DC com- The comparators that form the window comparator consist
ponent of the amplied signal (including the osets) and of a simple OTA with 10 mV of hysteresis.
centers it into the comparator window.
3.2 Clock Generator
The amplier gain is determined by the minimum value that The circuit behaviour is based on a capacitor CCK that is
the window comparator can safely detect. In this case a valid charged/discharged [3] at constant current while the voltage
alarm (amplitude 0.35 mV) must be amplied to about 50 VCK across it is compared with a voltage reference VH or
mV. This implies a closed loop gain of 145. VL . Initially, VCK and Vout are 0, the inverting input of
the comparator CP2 is at VH and CCK is charged at con-
The low cut-o frequency (0.15 Hz) is determined by R1 C1 . stant current IC . When VCK becomes larger than VH CP2
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switches and CCK is discharged at constant current ID =IC . To reduce the complexity of the design the digital part has
When VCK becomes smaller than VL CP2 switches again, been realized with standard cells.
and so on.
4. EXPERIMENTAL RESULTS
M5 The circuits have been integrated in 0.8-m double-metal
M3 M4 double-poly CMOS technology. Fig. 4 shows the micropho-
:B
tograph of the test chip. The total area of the analog part
Iout (without pads) is 0.53 mm2 , while the whole test chip (in-
Vin M1 M2
cluding pads) has an area of 4.8 mm2 .
Vout The supply voltage is 5 V. Ten samples were measured.
IB M7 M6
2 : 1
3
75
5
4.5
3.5
2.5
1.5
40 mV/div).
3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5
Vdd [volt]
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[6] K.-M. Tham and K. Nagaraj. A low supply voltage [9] E. A. Vittoz and J. Fellrath. Cmos analog integrated
high psrr voltage reference in cmos process. IEEE J. circuits based on weak inversion operation. IEEE J.
Solid-State Circuit, 30:586{590, May 1995. Solid-State Circuit, SC-12:224{231, March 1977.
[7] R. van Dongen and V. Rikkink. A 1.5 v class ab cmos [10] F. You, S. H. K. Embabi, and E. Sanchez-Sinencio.
buer amplier for driving low-resistance loads. IEEE Low-voltage class ab buers with quiescent current
J. Solid-State Circuits, 30:1333{1338, December 1995. control. IEEE J. Solid-State Circuits, 33:915{920,
June 1998.
[8] E. A. Vittoz. Analog vlsi signal processing: why,
where and how? In Analog Integrated Circuits and [11] P.-C. Yu and J.-C. Wu. A class-b output buer for
Signal Processing, pages 27{44, July 1994.
at-panel-display column driver. IEEE J. Solid-State
Circuits, 34:116{119, January 1999.
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