PD - 94004A

IRFP260N
HEXFET® Power MOSFET
l Advanced Process Technology D
l Dynamic dv/dt Rating VDSS = 200V
l 175°C Operating Temperature
l Fast Switching RDS(on) = 0.04Ω
l Fully Avalanche Rated G
l Ease of Paralleling ID = 50A
l Simple Drive Requirements S

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where

higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
IDM Pulsed Drain Current  200
PD @TC = 25°C Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy‚ 560 mJ
IAR Avalanche Current 50 A
EAR Repetitive Avalanche Energy 30 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 10 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.50
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40
www.irf.com 1
10/11/00
IRFP260N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.04 Ω VGS = 10V, ID = 28A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 27 ––– ––– S VDS = 50V, ID = 28A „
––– ––– 25 VDS = 200V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 234 ID = 28A
Qgs Gate-to-Source Charge ––– ––– 38 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 110 VGS = 10V „
td(on) Turn-On Delay Time ––– 17 ––– VDD = 100V
tr Rise Time ––– 60 ––– ID = 28A
ns
td(off) Turn-Off Delay Time ––– 55 ––– RG = 1.8Ω
tf Fall Time ––– 48 ––– VGS = 10V „
Between lead, D
LD Internal Drain Inductance ––– 5.0 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 13 –––
and center of die contact S

Ciss Input Capacitance ––– 4057 ––– VGS = 0V

Coss Output Capacitance ––– 603 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 161 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 50
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 200

(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V „
trr Reverse Recovery Time ––– 268 402 ns TJ = 25°C, IF = 28A
Qrr Reverse Recovery Charge ––– 1.9 2.8 µC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 1.5mH
RG = 25Ω, IAS = 28A.
ƒ ISD ≤ 28A, di/dt ≤ 486A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.

2 www.irf.com
 IRFP260N
1000 1000
VGS VGS
TOP 15V TOP 15V

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

10V 10V
8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 100 5.0V
BOTTOM 4.5V BOTTOM 4.5V

4.5V
10 10

4.5V

1 1

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 175°C
0.1 0.1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.5
RDS(on) , Drain-to-Source On Resistance

ID = 50A
I D , Drain-to-Source Current (A)

3.0

2.5
100
(Normalized)

TJ = 175° C
2.0

1.5
TJ = 25 ° C
10
1.0

0.5
V DS = 50V
20µs PULSE WIDTH VGS = 10V
1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com 3
IRFP260N
8000 16
VGS = 0V, f = 1 MHZ ID = 28A
Ciss = Cgs + Cgd, Cds SHORTED V DS= 160V

VGS , Gate-to-Source Voltage (V)

7000
Crss = Cgd V DS= 100V
V DS= 40V
6000 Coss = Cds + Cgd
12
C, Capacitance(pF)

Ciss
5000

4000 8

Coss
3000

2000 4
Crss
1000

0 0
0 50 100 150 200
1 10 100 1000
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

ID , Drain Current (A)

100
TJ = 175 ° C 100 10us

10 100us

TJ = 25 ° C
10
1ms
1

TC = 25 °C 10ms
TJ = 175 °C
V GS = 0 V Single Pulse
0.1 1
0.2 0.6 1.0 1.4 1.8 2.2 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
4 www.irf.com
 IRFP260N
RD
50 VDS
50
VGS
D.U.T.
40 RG
+
40 V DD
ID , Drain Current (A)

-
ID , Drain Current (A)

10V
30
30 Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

20 Fig 10a. Switching Time Test Circuit

20

VDS
10 90%
10

0
0 25 50 75 100 125 150 175
25 50
TC 75
, Case100 125
Temperature (150
° C) 175 10%
TC , Case Temperature ( ° C) VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

1
Thermal Response(Z thJC )

D = 0.50

0.20
0.1
0.10
0.05
0.02
0.01 SINGLE PULSE
(THERMAL RESPONSE) PDM
0.01
t1
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5
IRFP260N
1500

EAS , Single Pulse Avalanche Energy (mJ)

15V
ID
TOP 11A
20A
BOTTOM 28A
L D R IV E R
VDS
1000

RG D .U .T +
- VD D
IA S A
20V
tp 0 .0 1 Ω
500
Fig 12a. Unclamped Inductive Test Circuit

V (B R )D S S
tp 0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( ° C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

6 www.irf.com
 IRFP260N
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

www.irf.com 7
IRFP260N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
3.65 (.1 43 ) -D -
1 5.90 (.6 2 6) 3.55 (.1 40 ) 5 .3 0 (.20 9 )
1 5.30 (.6 0 2) 4 .7 0 (.18 5 )
0.25 (.0 1 0) M D B M
-B- -A- 2 .5 0 (.08 9)
1 .5 0 (.05 9)
5 .50 (.21 7) 4

2 0 .30 (.80 0)
1 9 .70 (.77 5) 5.50 (.2 1 7) NOTES:
2X
4.50 (.1 7 7) 1 D IM E N S IO N IN G & TO LE R A N C IN G
P E R A N S I Y 14.5M , 1982.
1 2 3 2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S TO JE D E C O U TLIN E
-C - T O -247-A C .
1 4.8 0 (.5 83 )
4 .3 0 (.1 70 )
1 4.2 0 (.5 59 )
3 .7 0 (.1 45 )

2 .40 (.09 4) LE A D A S S IG N M E N TS
1 .4 0 (.0 56 ) 0 .80 (.03 1)
2 .00 (.07 9) 3 X 1 .0 0 (.0 39 ) 3X 0 .40 (.01 6) 1 - G A TE
2X 2 - D R A IN
0 .2 5 (.0 10 ) M C A S 2.60 (.1 0 2) 3 - SOURCE
5.45 (.2 1 5) 2.20 (.0 8 7) 4 - D R A IN
3 .4 0 (.1 33 )
2X 3 .0 0 (.1 18 )

Part Marking Information

TO-247AC

E XAM P L E : TH IS IS A N IR F PE 3 0 A
W ITH A S S E M B L Y P A R T N U M B ER
L O T C O D E 3 A1 Q IN TE R N ATIO N AL
R EC T IF IE R IR FP E 30
LOGO
3A 1 Q 9 3 0 2
ASSEMBLY D A TE C O D E
LOT CODE (YYW W )
YY = YE A R
W W W EE K

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
8 www.irf.com
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.