MBRS20H100CT – MBRS20H200CT

Taiwan Semiconductor

20A, 100V - 200V Schottky Barrier Surface Mount Rectifier

FEATURES KEY PARAMETERS
● Low power loss, high efficiency PARAMETER VALUE UNIT
● Ideal for automated placement
IF 20 A
● Guard ring for overvoltage protection
● High surge current capability VRRM 100 - 200 V
● Moisture sensitivity level: level 1, per J-STD-020 IFSM 150 A
● RoHS Compliant
TJ MAX 175 °C
● Halogen-free according to IEC 61249-2-21
2
Package TO-263AB (D PAK)

APPLICATIONS Configuration Dual dies

● Switching mode power supply (SMPS)
● Adapters
● DC to DC converters

MECHANICAL DATA
2
● Case: TO-263AB (D PAK)
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
2
● Weight: 1.40g (approximately) TO-263AB (D PAK)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

MBRS MBRS MBRS
PARAMETER SYMBOL UNIT
20H100CT 20H150CT 20H200CT
MBRS MBRS MBRS
Marking code on the device
20H100CT 20H150CT 20H200CT
Repetitive peak reverse voltage VRRM 100 150 200 V
Reverse voltage, total rms value VR(RMS) 70 105 140 V
Forward current IF 20 A
Surge peak forward current, 8.3ms single half
IFSM 150 A
sine wave superimposed on rated load
Peak repetitive forward current
IFRM 20 A
(Rated VR, Square wave, 20KHz)
(1)
Peak repetitive reverse surge current IRRM 1 0.5 A
Critical rate of rise of off-state voltage dv/dt 10,000 V/µs
Junction temperature TJ -55 to +175 °C
Storage temperature TSTG -55 to +175 °C
Notes:
1. tp = 2.0μs, 1.0KHz

1 Version: J2103
 MBRS20H100CT – MBRS20H200CT
Taiwan Semiconductor

THERMAL PERFORMANCE
PARAMETER SYMBOL TYP UNIT
Junction-to-case thermal resistance RӨJC 1.5 °C/W

ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)

PARAMETER CONDITIONS SYMBOL TYP MAX UNIT
MBRS20H100CT - 0.85 V
MBRS20H150CT IF = 10A, TJ = 25°C
- 0.88 V
MBRS20H200CT
MBRS20H100CT - 0.95 V
MBRS20H150CT IF = 20A, TJ = 25°C
Forward voltage per - 0.97 V
(1) MBRS20H200CT VF
diode
MBRS20H100CT
MBRS20H150CT IF = 10A, TJ = 125°C - 0.75 V
MBRS20H200CT
MBRS20H100CT
MBRS20H150CT IF = 20A, TJ = 125°C - 0.85 V
MBRS20H200CT
(2)
TJ = 25°C - 5 µA
Reverse current @ rated VR per diode IR
TJ = 125°C - 2 mA
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms

ORDERING INFORMATION
ORDERING CODE(1) PACKAGE PACKING
2
MBRS20HxCT TO-263AB (D PAK) 800 / Tape & Reel
Notes:
1. “x” defines voltage from 100V(MBRS20H100CT) to 200V(MBRS20H200CT)

2 Version: J2103
 MBRS20H100CT – MBRS20H200CT
Taiwan Semiconductor

CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)

Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance

25 10000
AVERAGE FORWARD CURRENT (A)

20

CAPACITANCE (pF)
1000
15

10
100

5
f=1.0MHz
Vsig=50mVp-p
0 10
25 50 75 100 125 150 175 0.1 1 10 100
CASE TEMPERATURE (°C) REVERSE VOLTAGE (V)

Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics

10 100 10
INSTANTANEOUS REVERSE CURRENT (mA)

INSTANTANEOUS FORWARD CURRENT (A)

1 UF1DLW
TJ=125°C 1
10 TJ=125°C
0.1 TJ=125°C
TJ=25°C

(A)
0.1
0.01 TJ=75°C TJ=25°C
1

0.001 0.01
TJ=25°C Pulse width 300μs
1% duty cycle
Pulse width
0.0001 0.1
10 20 30 40 50 60 70 80 90 100 0.001
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)

Fig.5 Maximum Non-Repetitive Forward Surge Current

180
PEAK FORWARD SURGE CURRENT (A)

8.3ms single half sine wave

150

120

90

60

30

0
1 10 100
NUMBER OF CYCLES AT 60 Hz

3 Version: J2103
 MBRS20H100CT – MBRS20H200CT
Taiwan Semiconductor

CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)

Fig.6 Typical Transient Thermal Impedance

100
TRANSIENT THERMAL IMPEDANCE (°C/W)

10

1
0.01 0.1 1 10 100

PULSE DURATION (s)

4 Version: J2103
 MBRS20H100CT – MBRS20H200CT
Taiwan Semiconductor

PACKAGE OUTLINE DIMENSIONS

2
TO-263AB (D PAK)

SUGGESTED PAD LAYOUT

MARKING DIAGRAM

P/N = Marking Code

G = Green Compound
YWW = Date Code
F = Factory Code

5 Version: J2103
 MBRS20H100CT – MBRS20H200CT
Taiwan Semiconductor

Notice
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assumes no responsibility or liability for any errors or inaccuracies.

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relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.

6 Version: J2103