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No STB N A M A MAHASISWA MATERI REMEDIAL

1 44422051 AULIYAA SUPRAYOGI 1.8 Semiconductor Materials


2 44422052 LINUS PAELONGAN 5.1 Introduction - 5.6 Non-inverting Amplifier
3 44422053 MUH.RIFANDA ALFAHRESA 2.7.2 Full-Wave Rectifier
4 44422054 RAHMAT RAMADANI 1.8 Semiconductor Materials
5 44422055 M.SYAHRIAL AQSHA ZUHAIR 4.9 Metal–Oxide Semiconductor Field Effect Transist
6 44422056 NURIL DZIKRI 6.7 Boolean Algebra - 6.9 Logic Gates And Universal
7 44422057 VISKA SARI
8 44422058 ADRIAL DUAPADANG 4.9 Metal–Oxide Semiconductor Field Effect Transist
9 44422060 MUH. SYAHBAN AHMAD 4.1 Introduction - 4.3 Working Principle of JFET
10 44422061 SARMAN 1.9 P–N Junction and Depletion Layer
11 44422062 ARTUR ZAM MANGIRI 1.8 Semiconductor Materials
12 44422063 HISKIA ANUGRA 3.1 Basic Construction - 3.2 Transistor Action
13 44422064 SAPUTRA IBNU SAHLAZ 3.3 Circuit Configurations
14 44422065 AHSANU AMALA 3.4 Input/Output Characteristics
15 44422066 MUHAMMAD SABIL KAMRI
16 44422067 STEVANLY REYNER JHEPON 4.1 Introduction - 4.3 Working Principle of JFET
17 44422068 DAVID RIVELINO SAMMA 2.7.1 Half-Wave Rectifier
18 44422069 MUH. MAULANA ARASY SADAR 6.7 Boolean Algebra - 6.9 Logic Gates And Universal
19 44422070 SAIDIMAN SYAMSU 2.14 Zener Diodes
20 44422071 AHMAD RAHIM 4.1 Introduction - 4.3 Working Principle of JFET
21 44422072 MUH. PUTRA DIRGANTARA. M
22 44422073 AHMAD ITTAQULLAH
23 44422074 MUH. FEBRIAN 3.1 Basic Construction - 3.2 Transistor Action
24 44422075 RATU APRILIA BULQIS
nverting Amplifier

uctor Field Effect Transistor - 4.10 MOSFET Operation


ogic Gates And Universal Gates

uctor Field Effect Transistor - 4.10 MOSFET Operation


ng Principle of JFET

Transistor Action

ng Principle of JFET

ogic Gates And Universal Gates

ng Principle of JFET

Transistor Action
44422062 ARTUR ZAM MANGIRI
44422063 HISKIA ANUGRA
44422067 STEVANLY REYNER JHEPON
44422071 AHMAD RAHIM

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