PF500A-360 Reliability Data {BRET — 4 DWG. No. C108-57-01A, DENSEI-LAMBDA10 Tele - PHGIGIB Standard Application Circuit --- | MTB FH Calculated Values of MTBF - - $RBVRHR Vibration Test +++ « JAKY2 a L— bE Noise Simulate Test «+++ . HHBIFIBA High Temperature Storage Test ++ » (GEEFIRBLR Low Temperature Storage Test PF500A-360 gO) Geta ¢ | MT YT 4% Compoucut Derating =~ « EBEMLEANUEL ALi Moin Components Temperature Rico AT List -+---e-eceseereee FP DVB Abnormal Test + IEATEAMERRER Resistance to Soldering Heat Test ‘HMMM Thermal Shock Test «+++ OK ARIRMLBARRIA, REEF CD, SCOBMAI, ILIEMP HET LET. POELT. COMER ALEBEABVET, ‘The above data are typical valuee. Ae all unite have nearly the came characteristics, the data to be considered as ability values. DENSEI-LAMBDA RZ Ra Rs R6 RAs R16 RATPF500A-360 1. HAHEI Standard Application Circuit we \ scope: 20 cr ACaEOV O.enuF C8 BRO. ang Lt Bane C2 ACeSOV LF CHO BOY 20UR Le Ben 3 Ac2S0v 100000 11 AceoOV 47000" La sow 4 acezoy 900s" aLeRW LUA ke sou coos © FB eBuO 34 70Korm sooccn © TF THERA. FUSE wee $3050 a50v 28 53 J0w Stone 8 sso 0.82 62 1/29 «TOKO DENSEI-LAMBDA RIPF500A-360 2. MTBF#HtS4 Calculated Values of MTBF MoDEL PF5OOA—360 (1) HUY: Calculating Method MIL-HDBK~217 FOS RARE CHM EN TOET, SHEROMAL, BRAM REL GH, 4 OHMIC Lo TRESET, Calculated based on part count reliability projection of MIL—HDBK ~217F. Individual failure rate 2g is given to each part, and MTBF is calculated by the count of each part equip (Q)MTBFid MTBF Values MIBF 1 10° aft ous) ; ‘owe SN ee = SHES (CR. / 10° RETRY) Total Equipment Failure Rate (Failure /10°Hours) 7 EA OR RUMBARICAT TS MRR (he RK, “10° Generic Failure Rate for The ith Generic Part (Failure /10*Hours) 7 PA OMRMRO ME Quantity of ith Generic Part Rio MIRO HT AY — OH ‘Number of Different Generic Part Categories 1 i PAOMRMRINT SARI 77 F (nor) Generic Quality Factor for The th Generic Part (1 =1) Ge + 38.1899 (GROUND, FIXED) MIBE + 493,124 pen} GHours) DENSEI-LAMBDA R2PFS00A-360 3. Mine 4-—-7%4 27 Component Derating MODEL : PFEOOA-a60 (1) MHHAY: Calculating Method (a) i) Measuring Conditior “AD : 100VAC Input +H 360V, 1.44. (504W) Output BHR ay eae) ‘Mounting Method Standard Mounting Method (with Heatsink) SR-ATL— iE: BST Base-Plate Temperature (b) “#388 Semiconductors 7 Risk, WRENS LONELY ROH RMR, BA TEH EO BRAT Lite ‘The maximum rating temperature is compared with junction temperature which is calculated based on case temperature, power dissipation and thermal impedance. (©) IC, HHT, BF YH IC, Resistors, Capacitor, etc. PANEL, IRIE, RAL AME YG OBUIRALARARMIPIIC Ao THES, Ambient temperature, operating condition, power dissipation, etc are within derating criteria. (@) AYEHURLABE Calculating Method of Thermal Impedance ins) Te as) =Te 6 y-0= Bowel 6).0= Tm Pam Pe Te FAVAFAYYOMESY —AIBIE —BICIST casa Temperature at Start Point of Derating: 2ST in General Ts FAV-F4Y FOR SAMA —HICIST Ambient Tamperatunn at Sart Paint of Derating ; 25°C. in General A LFA F 4 VY OWEDS ) — FIRE —AEICISTC Lead Temperature at Start Point af Derating ; 25°C in General Pees) ERAT Fe RB (Pasinn))—-Mazimum Collector(Channel) Dissipation Tims) REE ALE (Tagan) ) Maximum Junetion(Channel) Temperature Oy. HEALD 7 — AE CORI (Gcr-c) Thermal Impedance between Junction(Channel) and Case DENSEI-LAMBDA R3Oi RA AD SABE CORE ‘Thermal Impedance between Junction and Air 2) BAT 4 V—F 47H Component Derating List PF500A-360 Bde Bin REM HOARE PHT B we Location No. Par Name MAX Rating ‘Actual Rating | Derating Facior_| Note ar CHIP MOS FET Tenmany i500 | ten wore 33% @ CHP MOS FET “Teh(max):i50° | Teh: 108970 726% QB ‘CHIP MOS FET ‘Teh(max):150°C Teh : 108.3°C_ 2.2% oe GHP MOS FET Ten(maxy 50 | ren 10897 Ta Cr ‘CHIP TRANSISTOR Tj (max) :150°C_ Tj: 96.2. 64.1% Qi06 CHIPTRANSISTOR [Tj (max):150C | 1} 1 102.80 5% Qi07 CHIFTRANSISTOR [~7j amny1306 [aj + 90.70 3% Dis BRIDGE DIOED_ Ti (max) 1500 | Tj : 1040 0.4% D2 CHIP DIODE Ti(max) 150 | Tj: 8460 56.4% D> Gir BIODE: “Fj uaa) 1907 | 7. 909°C Ba ‘D4 ‘CHIP DIODE Tj (max) :150°C ‘Tj: 822°C 54.8% Ds (CHIP DIODE imax) 150'0_| 1) = 9930 63% De ‘Gir DIODE Fj man) 1250 | Ty + 766 wa% Dio ‘CHIP DIODE Tj (max) 125C_| Ti: 766C 3% Dir CHIP DIODE, Tj (max) 125% | Ts 759 Om oni caren 7F (man) a | LC ave DENSEI-LAMBDA R4PF500A-360 4, 3:3844n10 HE LF ~Main Components Temperature Rise AT List MODEL : Prs00A—s60 BRE in WELW OTe Location No. Part Name ‘Temperature Rise(°C) a CHIP MOS FET 127 @ (CHIP MOS FET 146 OF CHIP MOS FET Tay Os (CHIP TRANSISTOR 29 ‘SRI CHIP SIR TA Dit ‘BRIDGE DIODE 38 DS: (CHIP DIODE 7 Q106 ‘CHIP TRANSISTOR 165 [oi07 ‘CHIP TRANSISTOR 48 L2 CORE | CHOKE COIL. 169 T3CORE | CHOKE COIL 21 BASE-PLATE, 0.0 Basis) + ESA: Measuring Conditions EGR) ‘Standard Mounting Method (with Heatsink) ett ie Mounting Mews | TA=25°C HAAN, Hoatcinke AAT HEY Power Supply AAT U— NRIERUE RE (85°C) Measuring point of Base-Plate Temperature AE Input Voltage 1oovAC HARE Output Voltage 360vDC HTH Output Current 1.44 (504W) Top : ABRBSEISTCISBUYTA— AT LV — HBLEAIOOT E 125 HIN ERA L. TORO ROAST U— MERE IML LIEB OAT (SAT L— bE ARE OBER) RLELD, ‘Temperature difference between a case of each component and base-plate, fitted power supply with heatsink to be maintained 100°C: (base-plate temperature) at 25°C. (ambient temperature), DENSEI-LAMBDA RS5. 77/7 —| Loca |" Tet |u| P| se | 38 | we | HR | 5] w]e JO] O[Hi|R)z tion | Point || 5 alv|c|alie|o a % No. R|N Upp |p | i | | T/ ||| ae | se | am | at] x L Note % Fi | s0| Bu | se | Re| Da) Fu ofc} oc i) pm e e e 2 . e a . = 4 e Ee e x] 0s e © [BIE Faw Opn 6 - . 7] Di © [31946 F(Low Outpa 3 e . ota LD e ° 0 s . ° in Gc e e 2 Ds [@ . . ° [ba 298,204 Q101,Q105, Lantoa,zoiou,z0107,00101 fate = — BF tuermal Fuse Opened) B DG le e . e [Da : 823,204,101 0105, Izo102,z0104z20107,PC101 ieee = — er [Thermal Fuse Opened) iz ose . is] @ |[_D e e 16 S e e 7 c e ele . [Da ono 8 Ds le e e 9 DG le ele e [Da QuRaDe 20 Gs_le e eo] pare DENSEI-LAMBDA RGPF500A-360 RT PRR Test Resuls Test Position ree SuSmoke == Buu SeSmell_ Re Rd Ht No. DeDumged Rufus Bhown _NO:MvOupa NENeChuge OvOun 2314] s]6[7]#]9 [wpe Ahan | BRST Loca- | Test Ble) wR) Sle) el oOlol mM) se) se tion | Point alv|c|a|t&|o es No. Lf |p | ie | 2 | MH) BR) LX L Note wr Fi | $0] Bu se | Re [Da | Fu ofc] or ap wee REE RT aw AT 2 E e (© [AUX F Low AUX) 2 B e (@ [AUXHEKE Ftow AUX) 2 cE le © [AUX LF digh AUN | 25 ca fe e (@ [AUxREE LR CHigh AUX) Iba : zD103 % BE le (© AUXmE=HE Flow AU, ar [SRA . . . [Du : RIB Rat Open) jase ea — ctoermat Fuse Opened) 7 z = = = Ibs = RIR R144 (Opened La = — X18 thermal Fuse Opened) B G ° ° ° [Ds ; RIB RL (Opened) mae Amr thermal Fuse Opened) 30. AK |@ e a ao . 3 KG fe . . [Da RIG,RIWA (Opened) oe a oe |(Thermal Fuse Opened) 33] THI e @ [OTPHMHE(No OTP) en . . imate = — 61 ctrl Fuse Opened) Be = oi = va Uaes.D2.b3 36. e e 37] Cr e e 32 = o Ener oo 39 e Oh NREey (Cais VlageFlctates) 40 See. e Oa ey Output Vonage Flurats) a} om [pale e 2 Pa. e ole . [Da OROLOUDADIODTE oo Se. Tw © [aren output Votiage Fuctuates) a See e 0 araED (up Vttge Fletuate) a> a [mle ele [Da :o8 46 Pi © [5 F ow Oupan a7 Auxiliany| @ e [Avuliary Wiring Opened 4 ‘Auxiliary e DENSEI-LAMBDA RIPF500A-360 Rea | ae FORDE Test Revalis =-F TestPosition | ‘Test | FiFie SoSmoke -«Buunt © SeSmell Ree Hat No Modo | DeDansged_Fu:FuveDlown NOM%o Outpt _NCNo Change _OcOters T[2[3]74[516[7[8[9polufiz aba | teuZ-| s | o Loca-| "Test |] P| 38] 3 fat] 8] | w]e ]olo}mlale tion | Point || E aly|clalt}o a % No. R|N LP] P| mi] 2 | a TY) | xk [sm | me] | af aa) x U Note a Fi} So| Bu] se Re |Da| Fu INo|Nc| or elo e e 30 e 31 [| Qor] —c e jae = Thermal Fuse Opened) 3 E . jac = — 4850 ‘Ambient Temperature + Rue + 30min <—> 30min Test Time Leyele 60min 4850 30min 40°C + RBI 2 100. 200. 300 44 7v Test Cycles cycles + FE Not Operating (4) BRITE Test Method MBC OR, ALR ARMINIA HEAR Z-RAM ATS. 100, 200, 300 4 7 4K, PRS MIAME FIC LGD LICR ANE ETS Before the test check if there is no abnormal output then put the D-U.T. in the testing chamber. Then test it in the above cycles 100, 200 and 20M eyelnc Inter, leave it for hone at room temperanire then check it if there is no abnormal output. ©) PRULAUR Test Results ai OK PURI Test Conditions ARE : IOVAC — HARRIE: 14A(100%) AMAT UN bie: 250 Input Volge Output Curent Base Pate Temperature WEF, KART, ‘ee nent page for nicasuring data. DENSEI-LAMBDA R17362.0 PF500A-360 Hae 0 100 200 BER 71 Testcycle (Cycle) Y TRE Ripple Voltage(Yp-p) 0 100 200 RR 7 Test cycle ARH Line Regulation(V) 300 (Cycle) 0 100 200 PURI 7 1 Test cycle BE Load Regulation(V) RRA 7 Test cycle DENSEI-LAMBDA (Cycle) RAB