Philips Components ne BF747 —_ meet’) NPN 1 GHz wideband transistor date ot issue | Apri 1901 FEATURES ‘QUICK REFERENCE DATA * Stable oscillator operation SYMBOL[ PARAMETER | CONDITIONS | MIN. [MAX.| UNIT + High current gain Voeo | collector-emitter - | 20]V + Good thermal stability. voltage Veao | collector-base voltage =| 30 |v Veso | emiter-base voltage =| sv eee Tom | collector current (OC) _| peak value [50 [ma ‘The BF747 is alow cost NPN. Pro | total power upto =} 450-| mwr transistor ina plastic SOT23 dissipation T= 100°C envelope. It is intended for VHF and poet UF TV-tuner applications andcan | Taig | Storage temperature 35 [+180 [0 be used as a mixer and/or oscillator. range, 7 junction temperature = [80 [e MECHANICAL DATA Note Plastic SOT2S. |. Ts temperature measured on soldering point of collector tab. PN DESCRIPTION ‘ORDERING AND PACKAGE INFORMATION 1 [base : EXTENDED. PACKAGE 2__| emitter TYPE NUMBER | CODE _| PACKING METHOD 3 [collector BFrA7 SOT23_| 12mmreel Marking code: E15Philips Components Product specification NPN 1 GHz wideband transistor BF747 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) ‘SYMBOL PARAMETER CONDITIONS | MIN. MAX._|_UNIT Veeo coliector-emitter voltage 7 2 Vv Ve8o emitter-base voltage : 3 Vv Voso___| collector-base voltage i 301 lent | collector current (OC) peak value {50 ma Prot total power dissipation : uptor. 5 150__| mW (Tots storage temperature range | _ | #150 [°C nh junction temperature a : +150 [°C THERMAL RESISTANCE [__ SYMBOL PARAMETER «| NOM] _UNTT Rinjs | fomjunction to soldering point [Eeeats20 [kaw CHARACTERISTICS T\=25°C unless otherwise specified [SYMBOL __ PARAMETER CONDITIONS MIN. Typ. | MAX. | UNIT eso__| colectorcut-offcurrent | le= 0: Vcg= 10V zi 100 [nA Pee OC current gain Ic=2mA, | 4 : 250 i Voe=10V tr Transition Frequency ¥= 500 MHz: |_08 12 76 | GHe | Ig=15ma; || Nee = 10 7 Ce feedback capacitance T= 1 MHz: 05 TF | _ 10v | | Gum | maximum unilateral power gain (00 Mi : 20 er) mA; Vee = 10V “note 1 | Note 1. Maximum Unilateral Gain (Gu is defined as: Gum=—— | 8a, /2 —1-_— Teale Seal? April 1991 524Philips Components Product specification. NPN. t,GHz wideband transistor : BET47 ves ae Prot (oo) ‘ 180 7 \ pa 2000 » 9 08 89 300 mC) Fig.t Test circuit for SOT23 Rin» measurement; ceramic substrate 8x 10X0.7 mm. Fig.2 Power derating curve, junction to case. 100 weasio-s oe 100] - * 2» 07 t 10 100 te (ma) Fig.3 Current gain as a function of collector current; Vee = 10. Fig.4 Collector-emitter saturation voltage as a function of collector current; lc/le = 10. ‘Apri 1901Philips Components Product specification NPN 1 GHz wideband transistor BF747 va eas | te weeny i | | cn | we 4 8 T 10 li os \ | | i | | nt ‘| Sy ' ost ea { \ ty | i Ly ' ay . 1 10 100 °9 4 . 1 6 20 ko “ea to Fig,5 Transition frequency as a function of collector | current; Veg = 10V; f= 500 MHz. | Fig.6 Feedback capacitance as a function of voltage; | te=ie=0; f= 1 MHz. l waa ow | & Ae a ro ! i op iif jf {| o1 7 Ie (ma) Fig.7 Common-emitter Gyy4 as a function of collector current; Voe = 10 V; = 100 MHz. cum (9) « 105 + (ans) 10+ | Fig.8 Common-emitter Guy as a function of frequency; | Voe=10V: le= 15 mA, April 1991Philips Components, NPN: t.GHz wideband transistor Product specification we ; . BE) 8 sere @ oH i 4 7 1 100 tet) Fig.9 Common-emitter noise figure as a function of collector current; Voe = 10 V: f= 100 MH2; Z=2=609. Fig.10 Common-base input admittance, Ys; Vee = 10. » ease (es) [5maf — 10 ga: c 1100 wt Tad =30 2918910 521 (78) Fig.11 Gommon-base forward admittance, Yor; : wa % bal Testes ohh a 9°. 15) eco t 1 “OS a Fig.12 Common-base reverse admittance, Y12: Voa=10V. >Philips Components Product specification NPN 1 GHz wideband transistor BF747 Fig.13 Common-base output admittance, Y22: Ven = 10V. April 1991 528Philips Components Product specification NPN 1 GHz wideband transistor BF747 Fig.16 Common-emitter reverse transmission coefficient, S12: Vce = 10 Vs lg = 15 mA. April 1991 529Philips Components Product specification NPN 1 GHz wideband transistor BF747 | \ | 15mA f Yee Yen Frequency mag | Real imag | Real imag_| ) ims) | ims) rm) | (mS)_ (ms) 4000 | 689746 10277 | -67.9160 12.3098 | -0200 - 1000 | -0130 20080 100.00 60.4233 -20.585 | -57.9200 25.6144 | -.0600 - 3000 | ~.0840 70980 200.00 | 45.0125 -27.430 | -39.0830 34.4796 | -.1000 - 16000 | 1943 1.35080 | 300.00 | 34.2639 26.441 | 25.4010 33.9009 | -2000 - 18000 | 298 1.91811 | 400.00 27.6753 -23.366 | -17.2450 31.1112 | -2000 -1.0036 3728 2.50881 50000 | 23.9288 20.816 | -11.6590 27.6973 | —2000 1.2020 | 4471 3.04457 | 600.00 21.4986 -17.909 7.8471 25.0050 -2000 -1.4026 | 5253 3.59467 700.00 | 20.0348 15.630 | - 5.3109 22.6341 | -2000 115963 5974 4.17222 186263 -14.039 | - 2.9007 20.1675 | -2000 1.8013 | 6929 4.70894 182579 12788 | - 13647 18.7133 | --2000 8208 §.29419 17.8426 1.684 0660 17.1226 | -.2000 April 1991NPN 1 GHz wideband transistor BF747 Y-Parameters (common-base) at Vcp = 10 V; le = —5 mA; typical values. Yur You Yue Yoo reguency ag ag | peat mag | Read ag | Real ap (ms) (ms) (ms) (ms) (ms) (ms) (ms) {ms) 300.00, 37.5006 -46.867 |- 26.38900 53.7615 400 8000 46800 1.95355 Bo | Bree ETL Te eee ae | ee ea 800.00 18.6656 22.649 60000 27.6064 400 1.8593 87660 4.73938 imeem | rates See | nSeRSe see | naa 3908 | Sener Sores Y-Parameters (common-base) at Vee }0 V; le = -10 mA; typical values. Yu Yar Yoo FREQUENCY rag Hea ag rapes (ms) (ms) (ms) (ms) (ms) (ms) 300.00 | 37.1349 -59.012 - 24.28100 65.6604 60430 1.96058 IE eee | eeaeees error ecgerien crea oer 600.00 21.2460 35.017 |- 3.39520 40.7817 84080 3.63543 Y-Parameters (cor mmon-base) at Voi 10 V; Ie =-15 mA; typical FREQUENCY am | ua az = pote Real Imag] Real ‘Imag imag | Real Imag (ms) (ms) (ms) (ms) (ms) (ms) (ms) 40,00 | 206.4760 113.760 |-202.64000 118.0530 = 3000 | 1878047790 100.00 | 108:3290 -113.970 |- 96.42500 120.0870 = "3000 | 41900 ‘87720 200.00 | 53.0622 - 81.120 |- 41.7000 87.7035 = "7000 | ‘57550 1.41575 300.00 | 35.9283 - G2i076 |- 21'91000 68.6039 = 'a000 | ‘65550 1193670 400.00 | 28.0704 = so.027 | 12:48400 56.9216 =110609 | 75580 2.52909 500.00 | 234107 — 42,306 | 6.08020 48.2499 1.2607 | ‘81790 3.07778 600.00 | 201019 — s6373 | 3122150 41.5856 =1a510 | ‘g9420 3.61247 700.00 | 181804 - 32095! 2.01096 96.6737 =116677 | 99970 4.18590 00.00 | 161524 — 2a28| 4.4a487 31.3273 1.612 | 1.09058 4.71538 900.00 | 154557 - 25677 | 6.45024 28.0793 =2.1019 | 1.26238 5.28996 1000.00 | 146838 - 23.452 | 7189223 24.8570 2.3163 | 1139668 5.87286 Apri 1991 531Philips Components Product specification NPN 1 GHz wideband transistor BF747 $-Parameters (common-base) at Vcr = 10 V; Ic = 2 mA; typical values. Si Sat Si Sea FREQUENCY Sum (MHz) Mag Ang | Mag Ang | Mag = Ang [ Mag = Ang | (apy (rat)__ (deg) _| (rat)__(deg)_| (rat) (dea)_| _(rat)_(dea) 40 fag gemee=917 10 ess 0 me 16. 4p ee. 1S ese 70.3 | 980 eee = 4. | TT 100 741-371 | 489 1379 | 027 694 | 99 -78 | 262 200 522-559 | 398 1153 | .o44 640 | 982-106 | 184 300 40a 6-658 | 248 1032 | 057 e932 | esr 126 | 144 400 332 733 | 197 944 | 070 630 | a7 186 | 118 500 2380-787 | 162 880 | 081 632 | 839 -169 | 98 600 258 - 847 | 1.39 82.5 092 63.1 835 19.3 83 ; 700 ry ST eae ee | ee 800 Pe Sra || he ee a er 900 Ce Se ee etd eo ee 1000 ted 1085 | 93 os6 | (131 «61.9 | 822 288 | 4d 4200 154-1202 | g2 9 596 | 148 9 611 | 12-335 | 30 | i400 | 442 134.3 74 53.9 164 608 807 38.5, 2.0 131-1460 | 68 «= 500 | 178 «= 60.9 | 799-432 | 14 121-1619 | 4 «= 459 | 194 = 60g | (792-876 4 17-1798 | 60 ato |_207__—soa_| 771-522 | ~3 S-Parameters (common-base) at Vor Sus FREQUENCY | —__|— Gum ui)’ | Mag Ang | Mag Ang _| Mag Ang | Mag Ang | (ap) (a) (deo) | (ra) de | ra) (de) | (rat) (ded 40 7e7 = 265 | 11.90 1493 | 011 758 | 956 - 60 | 356 100 saa 491 | 760 1282 | ‘oz 676 | ‘875 0-88 | 254 200 30-652 | 449 1085 | (006 © a7 | aor © 101 | 186 300 py Se eer te |) re 400 aa 842 | 245 88.6 | ‘061 65.5 | 804 «139 | 125 500 oi L924 | 799 635 | ‘073 665 | 708 © 160 | 105 600 Nea «00.74 | elica) ee a7e.7] || 0s3e. sen) fucrore | ino ia|iarolt 700 180-1086 | 148 747 | 1093 666 | ‘a7 208 | 79 300 1704186 | 131 712 | ‘102 685 | 795 231 | 68 900 a SS Oe ae] ee) Pc) ee) |) 1000 v4e igi7 | t10 © 64a | 421 80 | 700 © 278 | 52 1200 132 1504} 96 676 | 138 «659 | ras 325 | 39 1400 132 6-148 | a5 s2a | 1850659 | 778 74 | 2? 1600 133 176.8 78 48.4 172 66.2 776 421] 19 1800 132 1693 | 772 aaa | ta9 © 663 | 770 «485 | 12 2000 1401524 | ‘67393 | 205 655 | 752-509 | 3 April 1991 592Philips Components Product specification NPN 1 GHz wideband transistor BF747 ‘S-Parameters (common-base) at Vce = 10 V; Ic = 10 mA; typical values. Su Sa [ Siz I Sz FREQUENCY = G (MHz) Mag Ang | Mag Ang | Mag Ang | Mag = Ang) (day L (at) (deg)_ | (rat) (deg) __(rat)_(dea)_|trat)__(deo) 20 ear S47 | 15481304 [010726 | et 7.9 «| 100 aie 547 | 890 1142 | 020 689 | 897 a5 | 250 200 203 719] 495 991 | (033 685 | 802 94 | 187 300 38 «eae | 342 60 ote | oae = 683 | 700-11 | 151 +400 200 6-977 | 26a 853 | 057 680 | 785 132 | 127 500 je6 1083 | 214 808 | O68 685 | 7a 6-155 | 108 B00 i cura | ter yet | rr a8 | e077 | ‘ga | 700 155-1274 1.58 723 087 69.2 781 20.1 82 | 800 151 -134.7 1.40 68.8 097 69.4 781 22.5 rl 900 43-1433} 126° © 653 | 106 «©6693 | 78-247 | 1000 339-1822 | 116 © 623. | (115 Baa | 7790-870 | Sa 1200 135 1708 | 101 555 | 134 © 694 | 7737 | at 1400 439 «1776 | 89 «= 503 | 152 «ga | 768) 387 | 29 1600 143 ie74. | 80 © dea 170 694 | 7660414 | 20 1800 1401522 || 74S 426 | «188 «= gad | 7620 459 13 2000 jer 1401 | 6975 | 205 gas | 746-504 4 S-Parameters (common-base) at Vce = 10V; lc = 15 mA; typical values. Su Sat Si | See FREQUENCY S oy Mag Ang | Mag Ang Mag Ang | Mag Ang | (ath {om {rat)___(dea)_| (ra) (dea) (rat) (dea)_|_(rat)_(deg) a0 564-379 | 1688 1934 009 ~-730+~/~«901 SC 74) 100 365 573 | 899 1103 | ‘O19 694 | 82879 | aT 200 260 -757| 493 969 | 032 693 797 -89 | 185 300 216-914 | 3.41 as | 044 69.2 786-108 | 15.0 400 187-1081 | 263 837 | 055693 | «7B | 129 | 126 500 174-184) 212790 | 088 «ga | 7790-151 107 600 160-1266 | «180 «= 744) 075701 | 778-174 | 9B 700 182-1363 | 156 705 | 085 70.7 | 7a -198 | Ba 800 143-1480 | 1.38 © 67.0 | 095 = 71.0 | 70-201 | 69 900 138-1501 | 124 637 | ‘tos 709 | 7a0 = 2a | 60 1000 436 tere | 114 © 605 | ‘113710 | 778-267 | 53 1200 137-1782 | 99 «539 | ‘132 «= 709 | ‘7740-315 | 38 1400 14a 688 | 87 486 | 151 «= 706 | 770 «= -364 | 28 1600 145 01594] 78 «446 | 169 «© 709 | 768-412 | 19 1800 101462 | 7341.0 | t8 = 708 | rea) 457 | 14 2000 ter 1342 | 6735.9 | 206 635 | 748-503 3 ‘Apri 1991 533