IRFBC30

www.vishay.com
Vishay Siliconix
Power MOSFET
D
FEATURES
• Dynamic dV/dt rating
TO-220AB Available
• Repetitive avalanche rated
• Fast switching Available

G • Ease of paralleling
• Simple drive requirements
S • Material categorization: for definitions of compliance
D
S
please see www.vishay.com/doc?99912
G
Note
N-Channel MOSFET * This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
VDS (V) 600 DESCRIPTION
RDS(on) (Ω) VGS = 10 V 2.2
Third generation power MOSFETs from Vishay provide the
Qg max. (nC) 31 designer with the best combination of fast switching,
Qgs (nC) 4.6 ruggedized device design, low on-resistance and
Qgd (nC) 17 cost-effectiveness.
Configuration Single The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free IRFBC30PbF
Lead (Pb)-free and halogen-free IRFBC30PbF-BE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 600
V
Gate-source voltage VGS ± 20
TC = 25 °C 3.6
Continuous drain current VGS at 10 V ID
TC = 100 °C 2.3 A
Pulsed drain current a IDM 14
Linear derating factor 0.59 W/°C
Single pulse avalanche energy b EAS 290 mJ
Repetitive avalanche current a IAR 3.6 A
Repetitive avalanche energy a EAR 7.4 mJ
Maximum power dissipation TC = 25 °C PD 74 W
Peak diode recovery dV/dt c dV/dt 3.0 V/ns
Operating junction and storage temperature range TJ, Tstg -55 to +150
°C
Soldering recommendations (peak temperature) d For 10 s 300
10 lbf · in
Mounting torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 41 mH, Rg = 25 Ω, IAS = 3.6 A (see fig. 12)
c. ISD ≤ 3.6 A, dI/dt ≤ 60 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case

S21-0868-Rev. C, 16-Aug-2021 1 Document Number: 91110

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000