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  • MG75Q2YS40

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    Miguel Angel Nuñez
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    © All Rights Reserved
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    4 views5 pages

    MG75Q2YS40

    Uploaded by

    Miguel Angel Nuñez

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
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    TOSHIBA MG75Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. © High Input Impedance © High Speed : 47=0.5ys(Max.) trp —0.5 es Max.) © Low Saturation Voltage = VoR(sat) —4.0V (Max) © Bnhancement-Mode © Includes a Complete Half Bridge in One Package. 3 i 3 © The Electrodes are Isolated from Case. “| SL LL J2) EQUIVALENT CIRCUIT [___suses | [ sasias] BL RR SEDEC = a 2 BIAS = TOSHIBA, 29401, ‘Weight : 202% Gi Bi/ce G2 By (B2) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Bmitier Voltage VoEs 1200 Vv (Gate Emitter Voltage Vors £20 Vv 1 7 Collector Current De c A ims lop 150 Forward Current ne te. 38 A ms Tew 150 Collector Power Dissipation (Te=25°C) Po 560 Ww [Junction Temperature T 150 °C Storage Temperature Range Tag —40~125 °C Isolation Voltage Visol 2500(AC 1 minute) v Screw Torque (Terminal / Mounting) = 3/3 Nem soni TTOaeA S Sapa RE PLATS Os ENS OL, 5 Le Re, ata an PEER uate sf sey ate all ilato WARP Peahenei ot LEE S TORIGR pe ld alle Sere ge lt hone Be Lok ad a RON ns Reade eg nd he prenciser oad cons ct oak Bia senkehdics tally nde 7997-03-03 15 TOSHIBA MG75Q2YS40 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC | SYMBOL] TEST CONDITION | MIN. | TYP. [MAX. ] UNIT Gate Leakage Current Iges | Vou=220V, Vog=0 — [= [2 [ ca Colleetor Cutoff Current Ices | Vog=1200V, Voz=0 — ff 10] ma Cate-Emitter Cut-off Voltage |V@Ronm| 17m, Vog-5¥ ao| — | 60 Collector Emitter -_ _ Saturation Volbage Ver(sat) | 10=75A, Von=150 — | 30] 40 VoE=10V, Van=0 Tap Copetens cies | YOREIOV.Va = | oo) — | or Rise Time | ty — | 03] 06 Switching timelT™2 Time | fon — | oa] os witching mel ran Time | te — | oz[ os] “ Turn-off Time| _toff — | val 16 Forward Voltage VE = | 20/ s0| ¥ Reverse Recovery Time tre — | 025) 05] us ‘Thermal Resistance Rage -2ensistor =| =} 022 |e yw Diode — | [os SS SSS cece ae eee 7997-03-03 2/5 TOSHIBA CccLLReTOR CURRENT Ie COULRCTORSMITTER VOLTAGE Vor 0) cameron cument ‘couNON EMITTER ents rr a COLLECTOR-EMMITTER VOLTAGE Vee () COURCTOR-EMITZER YOLIAGE Veg MG75Q2YS40 Ver - Vor counon’ Ton 400 A » |e [ a GATE-EMITTER VOLTAGE Vox () \ Vor ~ Vor on Yor - ¥ COMMON: ba COMMON: rete 5 atta i i i = i we 5 ry ol I Bl ! Sa aa a GATR-EMITTER VOLTAGE Vex 1% wren vor=*¥ GATE-EMITTER VOLTAGE Vez Coumeron EMER YOUTAGE Vor «> GATE-EMITTER VOLTAGE Vox Vor. Var - 6 0 comion : narreR g uso hes more [Veeo9 é E z E To 200 a —a00 ODD CHARGE ag 60 7997-03-03_3/5 TOSHIBA SWITCHING TIME ~ I¢ [couwon ewrrreR ‘Yoo=#i0v, Vgp=#15V 2 0 ws w 7» COLLECTOR CURRENT Ie (A) | = i [tty a : 46) Li’ | a FORWARD VOLTAGE Vp c - Ver 100000 = ‘000 000 8 rH CAPACITANCE © (pF | ee 3} irae a a COLLECTOREMITTER VOLTAGE Vor MG75Q2YS40 SWITCHING TIME ~ Rg 5 ‘COMMON EMITTER Voc 60, Iom 5A Voge 218V,Te=26% a CT) GATE RESISTANCE Re, (0) tens le — IP = common EE ig] taetonne el oy zg" Ba Bg g4 2 ae FORWARD CURRENT Ip

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