NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SC2408 DESCRIPTION —_2SC2408 is designed for High frequency Wide Band Amplifier. FEATURES © \Sarel? : 21dB TYP. @200 MHz ° NF 2448 TYP, @200 MHz ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature . junction Temperature ....... Maximum Power Dissipation (Ta=25 °C) + 65 to +150°C Total Power Dissipation . Maximum Volta Veg Collector to Base Voltage . v Vee Collector to Emitter Voltage ...... OV Veso Emitter to Base Voltage . . 30 Vv le Collector Current ELECTRICAL CHARACTERISTICS (Ta = 25 °C) PACKAGE DIMENSIONS in millimeters (inches) a8 ey " 3 |] 0.45. tl om [ee ase | 22 FS % LPP as Foe - u 1 ease EIAL_:sc4sa Zemitren ieoec Toa B.COLLECTOR lec: pase ‘SYMBOL (CHARACTERISTIC MIN. TYP. MAX. UNIT “TEST CONDITIONS: hee De Current Gain 0 100-200 Vee=10V, fr Gain Bandwidth Product 35 GHz Vee=t0v, Cob Output Capacitance 1.25 20 PF Vogt 10V. He: : Vce=10 V, 1c*50 mA, =200 MHz, ISare! Insertion Power Gain 18 a Re r Ve=10 V, 1c=30 mA, f=200 MHz, NF Noise 24 49 eG leo. Collector Cutoff Current os WA Vea=20V, 1e~0 leo Emitter Cutoff Current os BA _Vepr20V, Ic-0