Light Eritting Dicdes CLED) LED 18 & Special type of sanicondudoy P-Njunchion that Under ford forward conditions an emit extemal SpontenoaS raditions in OV, vidble , IR yegions of elechernagnetic spedrary: +s | The semicondudoy materials allow 4he light to pass Construction ugh dip. 2° an ; ie ns Toute with lens which helps to focus ie of LED shucne a. type of material used tion tpvigble- visible Nisible.@ feldy Woy King “the Process ct givin light eneve ing a eed cal voltage, S or ae — of Nght fom sotid with extieatlon provided by an dedyockatic field 5 let us consider the ease of forward bias p-N junction . a arent floi0S due to gree electron s- bak baer on Ne ade aye in highey conductor. is ‘on Bade a are in lower valance band - z eer ef excess elections and holes takes place when cument & passed thyough P-N junction diode: + when a election recombine ul ble (falls guom higher \evel co lower venergy level releasing q photon : alg coniespording bo Megy difference . ether tr» pt aa form af light- ei a. greater Yor DY fp fn of he pme quo He fom gf uit,Me Hee concertiation a4 holes (c, higher an the p-side holes — diffuce wowards right vand entey the n~ side Combining udlh the Majority ammleys , viz electrons «the n-side gels clepleted of elechons and devolop net positive charge This +he MegioN NEAY funckton develop an Aedic Meld wich Stop furthay arffusion of ehavges hls yegion jwhith (s Gse of caniers , 1 called depletion Tegion ov space tharige region: © The Fey level Ge for p-type - closer b the bp of He wien ns a oy oD jor sae 5 chery bottom of conduction Bandas ivy, eae sic pot tee 25 10 be middle: S% The fermi level on both ades of te depletion layer is rot aligned x H rs bending takes place Sine F level fy a Syste 4 eubbniuiy be uniform * 4 the dosence & bas, the Conduction Band on Be n ae lies lower thay on Pat of p side- ¥ WIS prevents met diffusion as he alectons have & overcome potential ames a: % A LED thas Ieavily doped » type ‘than a p- pe * When pred biased, the bariey height qets yeduced vant the ames diffice b> fo cher side, & be duncion eS CVO AS p-ade is Lightly doped mud> ewer rwmbey of te : Re arte, oj dictions wher Aiitce © n -Side x Recombination takes place io emitted - the emission takes place © x UYthe wit of the p-side i made mud thinner than the wid & naide “he eniled ligit 2n escape Yom Pe oo roifhouk getting reabsorbed ly the material: depletion ryeqion wand Liga is gandom divection. Divat and Sndivet Band Gap. Divect band_qqp * Dopants me .addid Lo the pen jundion t mateual f GaAs fo gc emission vera wide ange ef ccloy &S prefered oven Sariconductoys sike Si and Ge & te divect band gap matotral1¢5 4p divect band gee mateual tbe bottor ef Conduction vad | divert above the bop of the valance Band energy being inp of fb valaine band ) Sy ~ A+ Ph a Arne ik due prcable® hae is vp The notations used for three elements An 8, Ai 6 ges fy fous elemertty An Bra Pry “4 oe Coneidey Gia Asi-y Py asa fuuton ef mole fraction yg. 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