VSMY2940RG, VSMY2940G

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Vishay Semiconductors
High Speed Infrared Emitting Diodes, 940 nm,
Surface Emitter Technology
VSMY2940RG VSMY2940G FEATURES
• Package type: surface-mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• Very high radiant intensity
DESCRIPTION
• Angle of half intensity: ϕ = ± 10°
As part of the SurfLightTM portfolio, the VSMY2940 series
• Suitable for high pulse current operation
are infrared, 940 nm emitting diodes based on GaAlAs
surface emitter chip technology with extreme high radiant • Terminal configurations: gullwing or reverse gullwing
intensities, high optical power and high speed, molded in • Package matches with detector VEMD2000X01 series
clear, untinted plastic packages (with lens) for surface • Floor life: 4 weeks, MSL 2a, according to J-STD-020
mounting (SMD).
• Material categorization: for definitions of compliance
APPLICATIONS please see www.vishay.com/doc?99912

• Miniature light barrier

• Photointerrupters
• Optical switch
• Emitter source for proximity sensors

PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns)
VSMY2940RG 145 ± 10 940 10
VSMY2940G 145 ± 10 940 10
Note
• Test conditions see table “Basic Characteristics“

ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY2940RG Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VSMY2940G Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
Note
• MOQ: minimum order quantity

Rev. 1.1, 08-Dec-17 1 Document Number: 84221

For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR 5 V
Forward current IF 100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1 A
Power dissipation PV 180 mW
Junction temperature Tj 100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature According to Fig. 10, J-STD-020 Tsd 260 °C
Thermal resistance junction-to-ambient J-STD-051, soldered on PCB RthJA 250 K/W

200
180 100
PV - Power Dissipation (mW)

IF - Forward Current (mA)

160 RthJA = 250 K/W
80
140
RthJA = 250 K/W
120
60
100
80 40
60
40 20
20
0 0
0 20 40 60 80 100 0 20 40 60 80 100

Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C)

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
IF = 100 mA, tp = 20 ms VF - 1.4 1.8 V
Forward voltage
IF = 1 A, tp = 100 μs VF - 2.5 - V
Temperature coefficient of VF IF = 100 mA TKVF - -0.7 - mV/K
Reverse current IR Not designed for reverse operation μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ - 55 - pF
IF = 100 mA, tp = 20 ms Ie 75 145 215 mW/sr
Radiant intensity
IF = 1 A, tp = 100 μs Ie - 1000 - mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe - 55 - mW
Temperature coefficient of radiant
IF = 100 mA TKφe - -0.2 - %/K
power
Angle of half intensity ϕ - ± 10 - deg
Peak wavelength IF = 100 mA λp 920 940 960 nm
Spectral bandwidth IF = 100 mA Δλ - 50 - nm
Temperature coefficient of λp IF = 100 mA TKλp - 0.25 - nm/K
Rise time IF = 100 mA, 10 % to 90 % tr - 10 - ns
Fall time IF = 100 mA, 10 % to 90 % tf - 10 - ns

Rev. 1.1, 08-Dec-17 2 Document Number: 84221

For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

1000 115

Ie, rel - Relative Radiant Intensity (%)

tp = 100 μs IF = 100 mA
IF - Forward Current (mA)

110 tp = 20 ms

100 105

100

10 95

90

1 85
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -60 -40 -20 0 20 40 60 80 100
VF - Forward Voltage (V) Tamb - Ambient Temperature (°C)

Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature

110 100%
VF, rel - Relative Forward Voltage (%)

Ie, rel - Relative Radiant Intensity

IF = 100 mA IF = 100 mA
tp = 20 ms
80%
105

60%
100
40%

95
20%

90 0%
-60 -40 -20 0 20 40 60 80 100 800 850 900 950 1000 1050

Tamb - Ambient Temperature (°C) λ - Wavelength (nm)

Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Intensity vs. Wavelength

0° 10° 20°
10
30°
Ie, rel - Relative Radiant Intensity
Ie,rel - Relative Radiant Intensity

tp = 100 μs
ϕ - Angular Displacement

1 40°
(Ie / Ie(100 mA))

1.0
0.9 50°

0.1 0.8 60°

70°
0.7
80°
0.01
1 10 100 1000 0.6 0.4 0.2 0

IF - Forward Current (mA)

Fig. 5 - Relative Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Intensity vs. Angular Displacement

Rev. 1.1, 08-Dec-17 3 Document Number: 84221

For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
SOLDER PROFILE DRYPACK
Axis Title Devices are packed in moisture barrier bags (MBB) to
300 10000 prevent the products from moisture absorption during
Max. 260 °C transportation and storage. Each bag contains a desiccant.
250 255 °C
245 °C
240 °C
217 °C FLOOR LIFE
Temperature (°C)

200 1000
Floor life (time between soldering and removing from MBB)
Max. 30 s

2nd line
2nd line

1st line
must not exceed the time indicated on MBB label:
150
Floor life: 4 weeks
Max. 120 s Max. 100 s
100 100 Conditions: Tamb < 30 °C, RH < 60 %
Max. ramp down 6 °C/s
Moisture sensitivity level 2a, according to J-STD-020.
50 Max. ramp up 3 °C/s

DRYING
0 10
0 50 100 150 200 250 300
In case of moisture absorption devices should be baked
19841-1 Time (s)
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
Fig. 9 - Lead (Pb)-free Reflow Solder Profile 192 h at 40 °C (+ 5 °C), RH < 5 %.
According to J-STD-020

Rev. 1.1, 08-Dec-17 4 Document Number: 84221

For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VSMY2940RG, VSMY2940G
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Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMY2940RG

0.4 Ø 1.8 ± 0.1

0.05 ± 0.1

0.3
Z
2.77 ± 0.2

1.6

0.19
2.2 2.2

5.8 ± 0.2

1.1 ± 0.1
exposed copper
Z 20:1
2.3 ± 0.2
0.5

0.4
2.3 ± 0.2

0.254
anode pin ID cathode
technical drawings
according to DIN
1.7 specifications
0.75

solder pad proposal

acc. IPC 7351
Not indicated tolerances ± 0.1

Ø 2.3 ± 0.1

6.7

Drawing-No.: 6.544-5391.03-4
Issue: 2; 19.09.14

Rev. 1.1, 08-Dec-17 5 Document Number: 84221

For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMY2940G
0.4 Ø 1.8

0.3
2.77 ± 0.2

X
1.6
0.05

0.19
2.2 2.2

4.2 ± 0.2
X 20:1
exposed copper

2.3 ± 0.2
0.5

0.4
2.3 ± 0.2

0.254
0.6

anode cathode
pin ID

technical drawings
0.75

solder pad proposal according to DIN

acc. IPC 7351 specifications

Not indicated tolerances ± 0.1

2.45

5.15

Drawing-No.: 6.544-5383.03-4
Issue: 2; 19.09.14

Rev. 1.1, 08-Dec-17 6 Document Number: 84221

For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMY2940RG

Reel
X
unreel direction

2.5
Ø 62 ± 0.5

tape position

±0
coming out from reel

.5
6000 pcs/reel
Ø 330 ± 1

0.5
±
13
Ø technical drawings
according to DIN
specifications

label posted here

12.4 ± 1.5

Leader and trailer tape

empty (160 mm min.) parts mounted

direction of pulling out

empty (400 mm min.)

Terminal position in tape

1.75 ± 0.1
Ø 1.55 ± 0.05 4 ± 0.1
Device Lead I Lead II I 2 ± 0.05
X 2:1
VEMT2000
Collector Emitter
VEMT2500
VEMD2000
12 ± 0.3

VEMD2500
VSMB2000 Cathode Anode
5.5 ± 0.05

VSMG2000
VSMF2890RG
VSMY2850RG 3.05 ± 0.1 4 ± 0.1
Anode Cathode
VSMY2940RG
II
Drawing-No.: 9.800-5100.01-4
Issue: 4; 19.09.14

Rev. 1.1, 08-Dec-17 7 Document Number: 84221

For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VSMY2940RG, VSMY2940G
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Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMY2940G

Reel
X
unreel direction

2.5
Ø 62 ± 0.5

tape position

±0
coming out from reel

.5
6000 pcs/reel
Ø 330 ± 1

0.5
±
13
Ø technical drawings
according to DIN
specifications

label posted here

12.4 ± 1.5

Leader and trailer tape

empty (160 mm min.) parts mounted

direction of pulling out

empty (400 mm min.)

Terminal position in tape

1.75 ± 0.1
Ø 1.55 ± 0.05 4 ± 0.1
Device Lead I Lead II I 2 ± 0.05
X 2:1
VSMB2020
VSMG2020
VEMD2020 Cathode Anode
12 ± 0.3

VEMD2520
VSMF2890G
5.5 ± 0.05

VEMT2020
Collector Emitter
VEMT2520
VSMY2850G 3.05 ± 0.1 4 ± 0.1
Anode Cathode
VSMY2940G
II
Drawing-No.: 9.800-5091.01-4
Issue: 5; 19.09.14

Rev. 1.1, 08-Dec-17 8 Document Number: 84221

For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023 1 Document Number: 91000