GO and RGO based FETs fabricated with Langmuir-Blodgett grown

monolayers
V. Divakar Botcha, Gulbagh Singh, Pavan K. Narayanam, D. S. Sutar, S. S. Talwar et al.

Citation: AIP Conf. Proc. 1447, 327 (2012); doi: 10.1063/1.4710012

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 GO and RGO Based FETs Fabricated With Langmuir-
Blodgett Grown Monolayers
V. Divakar Botcha*, Gulbagh Singh, Pavan K. Narayanam, D. S. Sutar, S. S.
Talwar, R. S. Srinivasa† and S. S. Major

Department of Physics, †Department of Metallurgical Engineering and Materials Science,

Indian Institute of Technology Bombay, Mumbai - 400076
*Email : divakar@iitb.ac.in

Abstract. Graphene oxide (GO) monolayers were transferred onto SiO2/Si substrates by Langmuir-Blodgett (LB)
technique and were converted to reduced graphene oxide (RGO) by exposure to hydrazine vapors followed by various
durations of heat treatment at 400 °C in Ar atmosphere. Bottom gated FETs were fabricated with LB grown monolayers
before and after reduction and were electrically characterized. The conductivity of RGO monolayers has been found to
be in the range of 3 to 5 Scm-1. The RGO devices showed p-type behavior with a hole mobility of 0.07cm2/Vs and Ion/Ioff
ratio of 2.
Keywords: Graphene oxide, Langmuir-Blodgett technique, FETs, conductivity, mobility.
PACS: 68.18.-g

INTRODUCTION sheets in the spreading solution. Heavily doped (100)

Reduced graphene oxide (RGO) is seen as an
alternative to graphene for applications in
nanoelectronics [1,2]. Spin coated and drop cast RGO
films have been used for fabrication of FETs and ultra
sensors. It is desirable to fabricate such devices from
monolayers of RGO on suitable substrates. Deposition
of monolayers of graphene oxide (GO) and subsequent
reduction to RGO is seen to provide a platform for the
fabrication of such devices. Characteristics of devices
such as FETs using monolayers of RGO are also used
for the electrical characterisation of these materials.
This work deals with the fabrication and
characterisation of back gated FETs from monolayers
of RGO on SiO2/Si substrates. The RGO monolayer
was obtained by reduction of GO monolayers
transferred by Langmuir-Blodgett (LB) technique.
EXPERIMENTAL DETAILS
GO in solution was synthesized using Hummers-
Offeman’s method [3]. GO monolayers were
transferred using KSV 3000 instrument. A solution of
GO in water: methanol (1:5) having of an absorbance of
0.1 at 230 nm was spread on the subphase containing
Milli-Q water (pH 5.5±0.2). Here, the absorbance has
been used as a measure of the concentration of GO
silicon (0.001-0.005 Ω.cm) capped with a thermally
grown 100 nm thick SiO2 layer were used as substrates.
The electrode patterns were fabricated by a combination
of optical and electron beam lithography (EBL).
Tungsten contact pads of size (100µm x 100µm) were
patterned on SiO2/Si by optical lithography and lift off
process. This was followed by LB deposition of GO
monolayers. In some cases, GO was reduced with
hydrazine treatment at 45°C for 18 hrs followed by heat
treatment at 400oC in Ar flow to obtain RGO
monolayers. Source and drain contacts [Au (150nm)/Cr
(10nm)] along with connecting lines to contact pads
were patterned by EBL and lift off processes.
Aluminum (100nm) was sputtered on the back side of
the wafer for gate contacts. SEM image of a typical
device structure is shown in figure 1. I-V measurements
of the devices were performed by a semiconductor
characterization system Keithley 4200-SCS.
FIGURE 1. SEM image of single monolayer of RGO as a
10µm channel between source and drain electrodes.

Solid State Physics: Proceedings of the 56th DAE Solid State Physics Symposium 2011
AIP Conf. Proc. 1447, 327-328 (2012); doi: 10.1063/1.4710012
© 2012 American Institute of Physics 978-0-7354-1044-2/$30.00

327

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 RESULTS AND DISCUSSION similar results for FETs fabricated with dip-coated GO
films [2]. The carrier mobility of RGO-2 was calculated
AFM studies of the transferred monolayer (not shown) using
revealed the presence of uniformly distributed GO µ = (L/WCoxVds)(ΔIds/ΔVg)
sheets of thickness ~ 1nm, which indicates their
monolayer character. Post reduction AFM studies on
where L and W are the channel length and width, C ox is
these layers showed that the reduction process did not
the gate oxide capacitance, Vds is the source–drain
affect the morphological stability of the sheets. FETs
voltage, Ids is the source–drain current, and Vg is the
were fabricated on GO monolayers as well as RGO
gate voltage. The linear region of the transfer
monolayers obtained by hydrazine treatment followed
characteristics curve in the negative biased region was
used to obtain the slope ΔIds/ΔVg. The hole mobility of
4.0x10
-9 RGO-2
RGO-2 device thus obtained is 0.07 cm2/V-s, which is
comparable with the values (0.01-1cm2V-1s-1) reported
-9
RGO-1
2.0x10
in the literature [1, 2]. The Ion/Ioff ratio is estimated to be
~ 2, which is consistent with Ion/Ioff ratios reported for
Ids(A)

0.0
GO mechanically exfoliated graphene of nearly monolayer
-9
thickness [5].
-2.0x10

-6
-9 1.0x10
-4.0x10 At Vds = 1V
-7
-0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 9.0x10

Vds(V)
-7
8.0x10
Ids(A)

FIGURE 2. Isd Vs Vds curves of as made GO, RGO-1 and -7

7.0x10
RGO-2.
-7
6.0x10
by heat treatment for 3 hrs (RGO-1), 6 hrs (RGO-2), In Air
-7
and 9 hrs (RGO-3). I-V characteristics of the devices 5.0x10

have been measured at zero gate bias and shown in -7

4.0x10
figure 2. Table 1 shows the channel resistance and the -30 -20 -10 0 10 20 30

corresponding conductivity obtained from the I-V Vg(V)

characteristics. The conductivity of GO is found to be

FIGURE 3. Transfer characteristics of RGO device measured
~10-6 Scm-1, which increases by several orders of at room temperature in air (Vds=1V).
magnitude after reduction. The conductivity of RGO-2
is in the range of 3-5 Scm-1, which is comparable to the
These results demonstrate the feasibility of fabrication
TABLE 1. Electrical parameters of as made GO and of FETs based on RGO monolayers obtained by LB
different reduced samples. process.
Film Resistance Conductivity
(ohm) (Scm-1) ACKNOWLEDGMENTS
GO ~1012 ~10-6
RGO-1 ~1096 10-2-10-1 The authors would like to thank the Centre of
RGO-2 ~10 3-5 Excellence in Nanoelectronics (CEN) at IIT Bombay
RGO-3 ~106 3-5
for fabrication and electrical characterizations.

values reported in literature [1]. Heat treatment beyond REFERENCES

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with increase in negative gate bias and nearly invariant
Ids for positive gate bias indicate that the total current is
dominated by the hole current [4], suggesting the p-
type behavior of RGO. Dong et al. [2] have reported
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