Journal of Alloys and Compounds 777 (2019) 1145e1151

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Journal of Alloys and Compounds

journal homepage: http://www.elsevier.com/locate/jalcom

Enhanced thermal conductivity of MoS2/InSe-nanoparticles/MoS2

hybrid sandwich structure
Xinke Liu a, Yuehua Hong a, Zhiwen Li a, Chuyu Xu a, Wei He b, Usman Younis a,
Qiang Liu c, Jing Wu d, Youming Lu a, V. Divakar Botcha a, e, *
a
College of Materials Science and Engineering, Shenzhen Key Laboratory of Microscale Optical Information Technology, Guangdong Research Center for
Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, PR China
b
College of Electronic Science and Technology, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, PR China
c
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road,
Shanghai, 200050, PR China
d
Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis, #08-03, 138634, Singapore
e
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen
University, 3688 Nanhai Ave, Shenzhen, 518060, PR China

a r t i c l e i n f o a b s t r a c t

Article history: MoS2 based hybrid structures have much attention due to their novel structures and potential applica-
Received 15 September 2018 tions in diverse areas, such as solar energy conversion, thermoelectric power generation and photo-
Received in revised form transistors. In the present work, we have fabricated a novel sandwich structure of MoS2/InSe-nano-
3 November 2018
particles (NPs)/MoS2 layers on SiO2/Si substrate by a combination of chemical vapor deposition and
Accepted 6 November 2018
Available online 9 November 2018
physical vapor deposition methods. The morphology of these structures was also studied using scanning
electron microscopy. In addition, we have also explored the thermal properties of these hybrid sandwich
structures using temperature and power-dependent Raman spectroscopy. For MoS2/InSe-NPs/MoS2
Keywords:
Hybrid sandwich structure
sample, the first-order temperature coefficients of E12g and A1g modes were found to be
0.01722
Tensile-strain and
0.01575 cm
1/K, respectively, which are significantly large compared to MoS2 layers without InSe-
Thermal conductivity NPs (i.e. MoS2/MoS2 sample). Further, the thermal conductivity of MoS2/InSe-NPs/MoS2 and MoS2/MoS2
Raman spectroscopy samples on SiO2/Si substrate was extracted as ~102.3 and ~81.7 W/m-K, respectively. This work suggests
an effective way to form a novel 2D-MoS2 based sandwich structure with semiconductor/metal-NPs;
opening up a new scenario to understand the electronic structure of the hybrid structure, and the
local strain introduced by NPs. Electron-phonon interactions at an interface can have significant effects
on electrical/thermal transport through the optoelectronic devices.
© 2018 Elsevier B.V. All rights reserved.

1. Introduction several parameters, such as molecular adsorption, electric field,

Molybdenum disulfide (MoS2) is one of most interesting two-
dimensional (2D) layered material from transition-metal-
dichalcogenides (TMDs) group owing to their potential applica-
tion in optoelectronic devices such as in solar cells, photo-catalytic,
electro-catalytic, bio-systems and photo-detector devices [1e4].
The thermal properties of thin layer of MoS2 can be modified by
* Corresponding author. College of Materials Science and Engineering, Shenzhen
Key Laboratory of Microscale Optical Information Technology, Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University,
3688 Nanhai Ave, Shenzhen, 518060, PR China.
E-mail address: divakarbotcha@gmail.com (V.D. Botcha).
electron mass and concentration, and mechanical strain [5e7]. All
these parameters are playing a key role in determining the thermal
properties of layered materials in high-performance electronic
devices which are strongly dependent on high thermal conduc-
tivity for highly efficient heat dissipation, whereas low thermal
conductivity is preferred in the field of thermoelectric application.
Hence, it is necessary to explore the thermal transport properties of
MoS2 layered based hybrid structures. More recently, several ul-
trathin hybrid MoS2 based nanocomposites have been widely
exploring toward in the field of optoelectronics [8e14].
Indium selenide (InSe) is a direct band gap from IIIeVI semi-
conductors, with a band gap ranging from ~1.35 to 2 eV, which
depends on existing crystal structure and phase [15,16]. As

https://doi.org/10.1016/j.jallcom.2018.11.073
0925-8388/© 2018 Elsevier B.V. All rights reserved.
1146 X. Liu et al. / Journal of Alloys and Compounds 777 (2019) 1145e1151

photodetectors, InSe are well capable of broadband photo- InSe-NPs/MoS2 sandwich structure as a possible material for
detection from the visible to the near-infrared region with photo- application in various optoelectronic devices, it is essential to know
responsivity superior to graphene. The effort to extract photocur- the electron-phonon (e-p) interaction and temperature dependent
rent has been hampered by the need to separate the electron and vibrational properties of sandwich structures.
hole pairs created by the incoming photons. The fabrication of
hybrid sandwich structures of MoS2 with InSe nanoparticles (NPs)
2. Experimental details
is a most beneficial combination to form a MoS2/InSe-NPs/MoS2
sandwich structure, which can provide a wide variety of routes to
Silicon wafers with thermally grown SiO2 layer (~300 nm) were
optoelectronics field, such as photo-diodes, photo-voltaic cells and
used as substrates and is defined as SiO2/Si. SiO2/Si substrates were
light emitting devices [12,17]. Furthermore, in this kind of struc-
initially cleaned with organic solvents followed by RCA-1
tures, the thermal management is an important issue in the design
(NH4OH:H2O2:H2O e 1:1:2) treatment [25] and blow dried under
and/or application of electronic devices due to critical role of
a stream of nitrogen gas, prior to use. A few-layer (FL) MoS2
electron/phonon scattering at nanoscale interfaces.
(~4e5 nm) was grown on the SiO2/Si wafer by a CVD, as described
Raman spectroscopy is a powerful and non-destructive tool for
in earlier [26]. The InSe-NPs were grown by a PVD method [27]. The
evaluating the thermal conductivity of materials, and its accuracy
InSe-powder (0.2 g, 99.9% purity) was used as a precursor. An Argon
exclusively depends on the intensity of the Raman mode [2,18].
(Ar) gas flow of 100 sccm was maintained, and carried the vapor to
The temperature dependent Raman studies on high-quality few
deposit the InSe-NPs on FL-MoS2/SiO2/Si, placed downstream
layers MoS2 by Sahoo et al. [19] reported a thermal conductiv-
about 20e25 cm away from the precursor. The growth temperature
ity ~ 52 W/m-K, at room temperature (RT). Zhang et al. [20] re-
was maintained at 850  C with the rate of 15  C/min. After 1 h
ported that the RT thermal conductivities of ~84 and ~77 W/m-K
deposition, the system was allowed to cool naturally under the
for suspended 1L and 2L MoS2, respectively. More recently, Aiyiti
constant Ar flow. Finally, FL-MoS2 was again deposited over InSe-
et al. [21] reported that the thermal conductivity of suspended
NPs, which will be referred as MoS2/InSe-NPs/MoS2/SiO2/Si and
few-layer (FL) MoS2 by the thermal bridge method and tried a
also deposited on FL-MoS2/SiO2/Si to develop a layered structure as
novel approach to continuously tailor thermal conductivity bit-by-
MoS2/MoS2/SiO2/Si for the purpose of comparison.
bit by applying mild oxygen plasma. The derived thermal con-
The surface morphology of MoS2/InSe-NPs/MoS2 and MoS2/
ductivities for different FL-MoS2 samples are in the range of
MoS2 structures on SiO2/Si substrate, at different stages of devel-
30e34 W/m-K. Most of the research groups have been explored on
opment was studied by SEM (Hitachi SU 70) at 10 kV. Micro-Raman
the thermal properties of suspended/supported MoS2 layers on
spectroscopy was performed using a confocal Raman microprobe
different substrates [18e20,22], as well as their application in
equipped with a 514 nm Arþ laser. Temperature dependent Raman
Raman enhancement on 2D materials with bare substrate/dielec-
studies were carried out on both structures in a temperature range
tric capping layer [2,23,24].
from RT to 500 K then samples were allowed for five minutes
Here, we fabricated a novel sandwich structure of MoS2/InSe-
thermal stabilization. The laser power was maintained at below
NPs/MoS2 few-layers on SiO2/Si substrate by a combination of CVD
0.25 mW during the experiments in order to avoid the Raman shift
and PVD methods. The morphology of these structures was studied
introduced by laser heating. Chemical compositions of the MoS2/
using scanning electron microscopy (SEM). The thermal conduc-
InSe-NPs/MoS2 and MoS2/MoS2 structures were studied by X-ray
tivity of a MoS2/InSe-NPs/MoS2 sandwich structure and just MoS2
photoelectron spectroscopy (XPS), with a Thermo-Fisher Microlab
layers without InSe-NPs (i.e. MoS2/MoS2/SiO2/Si) was evaluated by
350 XPS system equipped with a monochromatic Al Ka X-ray
performing a laser power dependence Raman study. To the best of
source.
our knowledge, there are no report on thermal conduction of MoS2/
InSe-NPs/MoS2 sandwich structure so far, performed using of
micro-Raman spectroscopy. The density functional theory (DFT) 3. Results and discussion
calculations were preformed to understand the effect of tensile
strain on band structure of FL-MoS2 layers. In the view of MoS2/ The SEM images of MoS2/MoS2 and MoS2/InSe-NPs/MoS2
sandwich structures on SiO2/Si substrate were shown in Fig. 1(a) (as

Fig. 1. (a) SEM images of MoS2/MoS2 and MoS2/InSe-NPs/MoS2 structures on SiO2/Si substrate. The schematic diagram of MoS2/MoS2 and MoS2/InSe-NPs/MoS2 sandwich structures
are shown as insets, and (b) Raman spectra of MoS2/InSe-NPs/MoS2 and MoS2/MoS2 samples at RT.
 X. Liu et al. / Journal of Alloys and Compounds 777 (2019) 1145e1151
indicated). The schematic structures of MoS2/MoS2/SiO2/Si and
MoS2/InSe-NPs/MoS2/SiO2/Si layered sandwich structure are
shown as inset of Fig. 1(a). The SEM image of MoS2/MoS2 shows the
triangle shape of the film was observed with large size of contin-
uous FL-MoS2 film is in the order of few hundred micrometers. The
SEM image of MoS2/InSe-NPs/MoS2 structures in Fig. 1(a) shows the
presence of InSe-NPs with uniformly in between FL-MoS2 layers.
Raman spectroscopy is a non-invasive technique to study the
fine structure and properties of FL-MoS2, such as atomic bonds,
thermal expansion, and thermal conductivity [2,18,28,29]. Fig. 1(b)
shows the typical Raman spectra of both structures on SiO2/Si
substrate, recorded in the range of 100e450 cm
1 at RT. These
spectra shows two prominent peaks at 380 ± 2 cm
1 and 406 ± 1,
which are associated with in-plane vibrations of Mo and sulfur
atoms (i.e. E12g mode) and out-of-plane vibrations of sulfur atoms
(i.e. A1g mode), respectively [18]. As shown in Fig. 1(b), the strain
related E12g-mode appears at ~382.1 cm
1 for MoS2/MoS2 struc-
tures and shifts to ~380.2 cm
1 for MoS2/InSe-NPs/MoS2 structures.
The red-shift (~1.9 cm
1) of E12g-mode is clearly indicative of the
tensile strain at MoS2 layers/InSe-NPs boundaries [30,31]. In
contrast to the behavior of E12g-mode, doping related A1g-mode
peak shows a marginal red-shift (~0.22 cm
1) in the MoS2/InSe-
NPs/MoS2 compared to MoS2/MoS2 sample. However, it invariably
showed a significant broadening and increase of intensity for the
MoS2/InSe-NPs/MoS2 sample. It is well known that the full width at
half maximum (FWHM) of the E12g mode is an indicator for crys-
talline quality and carrier concentration. The obtained values of
FWHM for both E12g and A1g modes in the MoS2/InSe-NPs/MoS2
structure are 9.63 cm
1 and 7.84 cm
1, respectively, which are
much larger than the corresponding values 6.05 cm
1 and
6.22 cm
1 of the MoS2/MoS2 structure. This may be attributed to an
increasing electron concentration due to tensile strain induced by
presence of InSe-NPs. Interestingly, the peak at ~285 cm
1 was
observed in MoS2/InSe-NPs/MoS2 structure which is related to E1g
mode of MoS2. Generally, the E1g mode is inactive under back-
scattering Raman measurements due to the local electric field
within the MoS2 atomic plane; whereas it can be observed that the
field may develop an out-of-plane to MoS2 plane after deposition of
metal/semiconductor-NPs [30,31]. In addition to that, MoS2/InSe-
NPs/MoS2 structure show one prominent resonant Raman peaks at
~150 cm
1, while the other peaks are forbidden due to Raman se-
lection rules or relatively weak due to degenerate in energy [23].
The peak at ~150 cm
1 is related to either A1 (TO) mode of b-InSe or
polycrystalline g-InSe phase [27,32,33]. The ratio of InSe-NP and
MoS2 in MoS2/InSe-NP/MoS2 sandwich structure is 1.13, which has
been calculated using XPS data in MoS2/InSe-NP/MoS2 sample. The
XPS data was shown in the supporting information as Fig. S1.
Here, we also report the temperature and laser power-
dependent Raman spectra of both structures. Fig. 2(a) and (b)
show the Raman spectra of both MoS2 sandwich structures with
and without InSe-NPs as a function of temperature variation from
300 to 500 K. All the Raman phonon modes E12g and A1g exhibit
red-shift from 300 to 500 K, as shown in Fig. 2 (c) and 2(d),
respectively. These results can be fitted by a linear equation:
u ¼ u0þcTDΤ, where u0 is the Raman mode frequency at RT, cT is
the first-order temperature coefficient, and DΤ is the temperature
difference with respect to RT. It is clearly seen that the Raman
modes of both samples change linearly as a function of tempera-
ture. It is well known that the temperature dependent of Raman
shift is attributed to anharmonicity due to the inter-atomic po-
tential, mediated by phonon-phonon interactions [23,28,34]. It is
obvious that both E12g and A1g modes show a stronger temperature
response in the multilayer of MoS2 due to weak interlayer in-
teractions to restricting the vibration. Here, the significant shift has
been observed in Raman peak position for both samples in a wide
1147
temperature range from 300 to 500 K. The measured cT values for
E12g and A1g-modes in the MoS2/MoS2 structure are about
0.01473
and
0.01288 cm
1/K, respectively, which are smaller than the
corresponding values
0.01722 and
0.01575 cm
1/K of the MoS2/
InSe-NPs/MoS2 structure, indicating a better thermal stability in the
earlier structure. In other words, the red-shift in Raman modes of
MoS2/MoS2 sample is much smaller than those observed on MoS2/
InSe-NPs/MoS2 sample. It is also consistent with a similar tensile
strain due to the presence of InSe-NPs [35]. The dispersion in few
data points of the Raman peaks is due to the slight variation in the
laser spot focused on the sample or the low excitation power due to
an extra attenuation from the cold-hot window during the mea-
surements [34]. This kind of linear behavior of Raman peak fre-
quencies with temperature is frequently seen in several 2D
materials, such as graphene, black phosphorus, InSe, In2Se3, MoS2,
WS2 layers [23,28,29,36,37].
The maximum laser power P0 was about 2.5 mW measured at
the exit of the microscope lens and it can be reduced to 0.5P0, 0.1P0
and 0.05P0, respectively, using an optical attenuator. The repre-
sentative RT Raman spectra collected at laser powers ranging from
0.05P0 to P0 are shown in Fig. 3(a) and (b), for both MoS2/InSe-NPs/
MoS2 and MoS2/MoS2 structures, respectively. Significant red-shifts
were observed in E12g and A1g modes for the both structures and
these two modes soften linearly with increasing power as shown in
Fig. 3(c) and (d), respectively. Owing to the higher signal of A1g
mode than of the E12g mode, it was used for evaluating the thermal
conductivity. In this power range, the frequency shift is given by
equation Du ¼ cP DP, where cP is the slope of power dependence in
the linear region, is the first-order power dependent coefficient and
P is the laser power. The fit coefficient cP values for the E12g and A1g
in MoS2/InSe-NPs/MoS2 are about
3.44707 cm
1/mW

1
and
2.44945 cm /mW, respectively, which are much smaller
than the corresponding values
3.88033 cm
1/mW

1
and
2.50967 cm /mW of MoS2/MoS2 structure. However, during
the experiments, the laser power P0 was not totally absorbed by the
MoS2/InSe-NPs/MoS2, with a part of it reflected by the air-MoS2 and
MoS2-SiO2 interfaces and the remaining transmitted. Thus, it is
essential to take a laser reduction factor (f) into consideration by f ¼
(1-R)[1-exp(-ah)], where R, a, and h are the reflectance of the MoS2
top surface, absorption coefficient, and thickness of total MoS2/
InSe-NPs/MoS2 structures, respectively [38,39].
According to the radial heating flow model, the thermal con-
ductivity has been expressed as k ¼ (1/2ph)(DP/DT), where h is film
thickness and DT is the local temperature rise due to the changing
heating power (DP¼ P2 - P1). Based on Du ¼ cT DT, the thermal
conductivity can be evaluated approximately for A1g using the
following formula,
k ¼ f cT ð1=2phÞðDu=DPÞ
1 (1)
Here, cT are the first temperature coefficient for Raman modes,
respectively [23,37,38,40]. Considering the laser power was not
totally absorbed, we take f as the laser reduction factor. The value
can be evaluated as: f ¼ 1 - exp (-ah), where a is the absorption
coefficient (a ¼ 6  105 cm
1) [41]. Taking the related values into
equation (1), the obtained thermal conductivities are ~ 81.7 and
~102.3 W/m-K for both MoS2/MoS2 and MoS2/InSe-NPs/MoS2
structures, respectively. It reveals that the InSe-NPs significantly
enhance the thermal conductivity in the MoS2/InSe-NPs/MoS2
sandwich structures. On the one hand, the thermal conductivity of
MoS2/InSe-NPs/MoS2 is as large as 102.3 W/m-K, which is much
larger than that of MoS2/MoS2 (81.7 W/m-K), facilitating the ther-
mal transport and dispersion of the MoS2 layers through the metal/
semiconductor NPs. The enhancement of thermal conductivity is
strongly attributed to 2D electron concentration, which has been
1148 X. Liu et al. / Journal of Alloys and Compounds 777 (2019) 1145e1151
Fig. 2. Temperature-dependent Raman spectra of (a) MoS2/MoS2 and (b) MoS2/InSe-NPs/MoS2 structures on SiO2/Si substrate from 300 to 500 K. (c) E12g and (d) A1g Raman modes
of both samples as a function of temperature including a linear fit.
increased due to tensile strain at MoS2/InSe-NPs boundaries. The
tensile strain locally modifies the band structure of MoS2 layers and
subsequently useful for solar applications in a broad range of the
solar spectrum [30].
It is well known that the electron concentration and effective
mass give the main contribution into the thermal conductivity and
it can be written as
ke ¼ p2 Tk2B ne =3m*e ye
where T is the temperature, kB is the Boltzmann constant, ne is the
electron concentration, m*e is the effective mass andye is the total
effective electron collision frequency [39]. The structural and
electronic properties of the FL-MoS2 layers (~4 nm) were investi-
gated by Material Studio, using the Cambridge Sequential Total
Energy Package (CASTEP) based on DFT [42] to understand the ef-
fect of tensile strain on band structure of FL-MoS2 layers and as a
result, the enhancement in k of MoS2/InSe-NPs hybrid structures
has been observed. Further, we use the generalized gradient
approximation for the exchange and correlation potential, as pro-
posed by Perdew-Burk-Ernzerhof (PBE) [43], together with the
projector augmented wave potential (PAW) to treat the ion-
(2)
electron interactions [44]. The plane wave cut-off energy is cho-
sen to be 650 eV, and a MonkhorstePack k-mesh of 5  5  1 is
used to sample the Brillouin-zone in the structure optimization and
total energy calculation [45]. Fig. 4(aed) and (e) exhibit the
 X. Liu et al. / Journal of Alloys and Compounds 777 (2019) 1145e1151 1149

Fig. 3. Laser power-dependent Raman spectra of (a) MoS2/MoS2 and (b) MoS2/InSe-NPs/MoS2 structures on SiO2/Si substrate from 0.05P0 to P0. (c) E12g and (d) A1g Raman modes of
both samples as a function of temperature including a linear fit.

calculation of band structures with strain for FL-MoS2 and the
corresponding measured electron concentration, respectively. It
reveals that their band structure undergoes a significant change as
the strain increases (band gap has been decreased with strain). As a
result, the 2D-electron concentration is increasing with strain as
shown in Fig. 4 (e). It is corroborates well with Raman results,
where FWHM of E12g and A1g modes are increased in the presence
of InSe-NPs (Fig. 1 (b)).
4. Conclusions
In conclusion, we have investigated the MoS2/InSe-NPs/MoS2
hybrid sandwich structure, which exhibits high-thermal
conductivity due to local strain induced by InSe-NPs deposition and
the local electrical field. The thermal conductivities of both MoS2/
InSe-NPs/MoS2 and MoS2/MoS2 structures were obtained by per-
forming a laser power-dependent Raman scattering experiment at
RT. By using the value of temperature coefficient and the data ob-
tained from power dependent frequency shift of prominent peak of
both the samples, thermal conductivities of MoS2/InSe-NPs/MoS2
and MoS2/MoS2 structures on SiO2/Si substrate were extracted as
~102.3 and ~81.7 W/m-K, respectively at RT. The enhancement in
thermal conductivity of hybrid sandwich structures is mainly
attributed to tensile-strain due to the presence of InSe-NPs at MoS2/
InSe-NPs boundaries. We conclude that the possibility of making
different novel layered structures and its thermal properties may
1150 X. Liu et al. / Journal of Alloys and Compounds 777 (2019) 1145e1151
Fig. 4. Band structures for four-layer of MoS2 structure at different strain percentages (a) 0%, (b) 1%, (c) 2%, (d) 4%, and (e) the corresponding electron concentration with strain.
open a new window towards the development in the field of op-
toelectronic applications at the nanoscale.
Acknowledgement
This project is supported by National Key Research and Devel-
opment Plan (2017YFB0403000), National Natural Science Foun-
dation of China (61504083), Public welfare capacity building in
Guangdong Province (2015A010103016), the Science and Technol-
ogy Foundation of Shenzhen (JCYJ20160226192033020), the Nat-
ural Science Foundation of Guangdong Province
(2016A030313060), The PhD Start-up Fund of Natural Science
Foundation of Guangdong Province (2017A030310424), and Natu-
ral Science Foundation of SZU (Grant No. 000062). Shenzhen Key
Laboratory of Microscale Optical Information Technology
(ZDSYS201703031605029), National Taipei University of Technol-
ogy- Shenzhen University Joint Research Program (2018001).
Appendix A. Supplementary data
Supplementary data to this article can be found online at
https://doi.org/10.1016/j.jallcom.2018.11.073.
References
[1] L. Wang, L. Huang, W.C. Tan, X. Feng, L. Chen, X. Huang, K.-W. Ang, 2D
photovoltaic devices: progress and prospects, Small Methods 2 (2018),
1700294.
[2] M. Xia, A review on applications of two-dimensional materials in surface-
enhanced Raman spectroscopy, Int. J. Spectrosc. 2018 (2018) 1e9.
[3] G. Wang, Y. Zhang, C. You, B. Liu, Y. Yang, H. Li, A. Cui, D. Liu, H. Yan, Two
dimensional materials based photodetectors, Infrared Phys. Technol. 88
(2018) 149e173.
[4] W. Huang, L. Gan, H. Li, Y. Ma, T. Zhai, 2D layered group IIIA metal chalco-
genides: synthesis, properties and applications in electronics and optoelec-
tronics, CrystEngComm 18 (2016) 3968e3984.
[5] S. Zhou, J. Zhao, Electronic structures of germanene on MoS2: effect of sub-
strate and molecular adsorption, J. Phys. Chem. C 120 (2016) 21691e21698.
[6] D.Y. Hwang, D.H. Suh, Evolution of a high local strain in rolling up MoS2sheets
decorated with Ag and Au nanoparticles for surface-enhanced Raman scat-
tering, Nanotechnology 28 (2017), 025603.
[7] B. Antonio Di, G. Luca, G. Filippo, I. Laura, L. Giuseppe, F. Tobias, S. Marika,
Hysteresis in the transfer characteristics of MoS2 transistors, 2D Mater. 5
(2018), 015014.
[8] W.G. Song, H.-J. Kwon, J. Park, J. Yeo, M. Kim, S. Park, S. Yun, K.-U. Kyung,
C.P. Grigoropoulos, S. Kim, Y.K. Hong, High-performance flexible multilayer
MoS2Transistors on solution-based polyimide substrates, Adv. Funct. Mater.
26 (2016) 2426e2434.
[9] N. Li, T. Lv, Y. Yao, H. Li, K. Liu, T. Chen, Compact graphene/MoS2 composite
films for highly flexible and stretchable all-solid-state supercapacitors,
J. Mater. Chem. A 5 (2017) 3267e3273.
[10] J. Jeon, Y. Park, S. Choi, J. Lee, S.S. Lim, B.H. Lee, Y.J. Song, J.H. Cho, Y.H. Jang,
S. Lee, Epitaxial synthesis of molybdenum carbide and formation of a Mo2C/
MoS2 hybrid structure via chemical conversion of molybdenum disulfide, ACS
Nano 12 (2018) 338e346.
[11] Z. Chen, D. Yin, M. Zhang, Sandwich-like MoS2@SnO2@C with high capacity
and stability for sodium/potassium ion batteries, Small 14 (2018), 1703818.
[12] S. Yuan, M.-J. Zhang, X. Yang, Z. Mei, Y. Chen, F. Pan, A novel MoS2-based
hybrid film as the back electrode for high-performance thin film solar cells,
RSC Adv. 7 (2017) 23415e23421.
[13] Y. Qi, Q. Liang, R. Lv, W. Shen, F. Kang, Z.-H. Huang, Synthesis and photo-
catalytic activity of mesoporous g-C3N4/MoS2hybrid catalysts, R. Soc. Open
Sci. 5 (2018).
[14] H. Qi, L. Wang, J. Sun, Y. Long, P. Hu, F. Liu, X. He, Production methods of van
der Waals heterostructures based on transition metal dichalcogenides, Crys-
tals 8 (2018).
[15] M. Wasala, H.I. Sirikumara, Y. Raj Sapkota, S. Hofer, D. Mazumdar,
T. Jayasekera, S. Talapatra, Recent advances in investigations of the electronic
and optoelectronic properties of group III, IV, and V selenide based binary
 X. Liu et al. / Journal of Alloys and Compounds 777 (2019) 1145e1151
layered compounds, J. Mater. Chem. C 5 (2017) 11214e11225.
[16] Z. Yang, W. Jie, C.-H. Mak, S. Lin, H. Lin, X. Yang, F. Yan, S.P. Lau, J. Hao, Wafer-
scale synthesis of high-quality semiconducting two-dimensional layered InSe
with broadband photoresponse, ACS Nano 11 (2017) 4225e4236.
[17] J. Zhang, X.Y. Lang, Y.F. Zhu, Q. Jiang, Strain tuned InSe/MoS2 bilayer van der
Waals heterostructures for photovoltaics or photocatalysis, Phys. Chem.
Chem. Phys. 20 (2018) 17574e17582.
[18] H. Malekpour, A.A. Balandin, Raman-based technique for measuring thermal
conductivity of graphene and related materials, J. Raman Spectrosc. 49 (2018)
106e120.
[19] S. Sahoo, A.P.S. Gaur, M. Ahmadi, M.J.F. Guinel, R.S. Katiyar, Temperature-
dependent Raman studies and thermal conductivity of few-layer MoS2,
J. Phys. Chem. C 117 (2013) 9042e9047.
[20] X. Zhang, D. Sun, Y. Li, G.H. Lee, X. Cui, D. Chenet, Y. You, T.F. Heinz, J.C. Hone,
Measurement of lateral and interfacial thermal conductivity of single- and
bilayer MoS2 and MoSe2 using refined optothermal Raman technique, ACS
Appl. Mater. Interfaces 7 (2015) 25923e25929.
[21] A. Aiyiti, S. Hu, C. Wang, Q. Xi, Z. Cheng, M. Xia, Y. Ma, J. Wu, J. Guo, Q. Wang,
J. Zhou, J. Chen, X. Xu, B. Li, Thermal conductivity of suspended few-layer
MoS2, Nanoscale 10 (2018) 2727e2734.
[22] X. Liu, Y.-W. Zhang, Thermal properties of transition-metal dichalcogenide,
Chin. Phys. B 27 (2018), 034402.
[23] V.D. Botcha, M. Zhang, K. Li, H. Gu, Z. Huang, J. Cai, Y. Lu, W. Yu, X. Liu, High- K
substrate effect on thermal properties of 2D InSe few layer, J. Alloys Compd.
735 (2018) 594e599.
[24] P. Xia, X. Feng, R.J. Ng, S. Wang, D. Chi, C. Li, Z. He, X. Liu, K.W. Ang, Impact and
origin of interface states in MOS capacitor with monolayer MoS2 and HfO2
high-k dielectric, Sci. Rep. 7 (2017) 40669.
[25] V.D. Botcha, P.K. Narayanam, G. Singh, S.S. Talwar, R.S. Srinivasa, S.S. Major,
Effect of substrate and subphase conditions on the surface morphology of
graphene oxide sheets prepared by LangmuireBlodgett technique, Colloids
Surf. A Physicochem. Eng. Asp. 452 (2014) 65e72.
[26] X. Liu, Y. Zhang, Q. Liu, J. He, L. Chen, K. Li, F. Jia, Y. Zeng, Y. Lu, W. Yu, D. Zhu,
W. Liu, J. Wu, Z. He, K.-W. Ang, Band alignment of ZnO/multilayer MoS2
interface determined by x-ray photoelectron spectroscopy, Appl. Phys. Lett.
109 (2016), 071602.
[27] V.D. Botcha, Y. Hong, Z. Huang, Z. Li, Q. Liu, J. Wu, Y. Lu, X. Liu, Growth and
thermal properties of various In2Se3 nanostructures prepared by single step
PVD technique, J. Alloys Compd. 773 (2019) 698e705.
[28] I. Calizo, A.A. Balandin, W. Bao, F. Miao, C.N. Lau, Temperature dependence of
the Raman spectra of graphene and graphene multilayers, Nano Lett. 7 (2007)
2645e2649.
[29] L. Su, Y. Zhang, Y. Yu, L. Cao, Dependence of coupling of quasi 2-D MoS2 with
substrates on substrate types, probed by temperature dependent Raman
scattering, Nanoscale 6 (2014) 4920e4927.
1151
[30] Y. Sun, K. Liu, X. Hong, M. Chen, J. Kim, S. Shi, J. Wu, A. Zettl, F. Wang, Probing
local strain at MX(2)-metal boundaries with surface plasmon-enhanced
Raman scattering, Nano Lett. 14 (2014) 5329e5334.
[31] J. Xia, J. Wang, D. Chao, Z. Chen, Z. Liu, J.L. Kuo, J. Yan, Z.X. Shen, Phase evo-
lution of lithium intercalation dynamics in 2H-MoS2, Nanoscale 9 (2017)
7533e7540.
[32] Z. Zheng, J. Yao, G. Yang, Self-assembly of the lateral In2Se3/CuInSe2 heter-
ojunction for enhanced photodetection, ACS Appl. Mater. Interfaces 9 (2017)
7288e7296.
[33] P. Reyes-Figueroa, T. Painchaud, T. Lepetit, S. Harel, L. Arzel, J. Yi, N. Barreau,
S. Velumani, Structural properties of In2Se3 precursor layers deposited by
spray pyrolysis and physical vapor deposition for CuInSe2 thin-film solar cell
applications, Thin Solid Films 587 (2015) 112e116.
[34] D.J. Late, Temperature dependent phonon shifts in few-layer black phos-
phorus, ACS Appl. Mater. Interfaces 7 (2015) 5857e5862.
[35] C. Gong, C. Huang, J. Miller, L. Cheng, Y. Hao, D. Cobden, J. Kim, R.S. Ruoff,
R.M. Wallace, K. Cho, X. Xu, Y.J. Chabal, Metal contacts on physical vapor
deposited monolayer MoS2, ACS Nano 7 (2013) 11350e11357.
[36] S. Zhou, X. Tao, Y. Gu, Thickness-dependent thermal conductivity of sus-
pended two-dimensional single-crystal In2Se3 layers grown by chemical
vapor deposition, J. Phys. Chem. C 120 (2016) 4753e4758.
[37] N. Peimyoo, J. Shang, W. Yang, Y. Wang, C. Cong, T. Yu, Thermal conductivity
determination of suspended mono- and bilayer WS2 by Raman spectroscopy,
Nano Res. 8 (2015) 1210e1221.
[38] A.A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, C.N. Lau,
Superior thermal conductivity of single-layer graphene, Nano Lett. 8 (2008)
902e907.
[39] P.S. Shternin, D.G. Yakovlev, Electron thermal conductivity owing to collisions
between degenerate electrons, Phys. Rev. D 74 (2006), 043004.
[40] H. Gu, Y. Lu, D. Zhu, K. Li, S. Zheng, J. Wang, K.-W. Ang, K. Xu, X. Liu, High
temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and
effects of capping layers, Results Phys. 7 (2017) 4394e4397.
[41] U. Ahuja, A. Dashora, H. Tiwari, D.C. Kothari, K. Venugopalan, Electronic and
optical properties of MoS2eWS2 multi-layers: first principles study, Comput.
Mater. Sci. 92 (2014) 451e456.
[42] M.D. Segall, J.D.L. Philip, M.J. Probert, C.J. Pickard, P.J. Hasnip, S.J. Clark,
M.C. Payne, First-principles simulation: ideas, illustrations and the CASTEP
code, J. Phys. Condens. Matter 14 (2002) 2717.
[43] J.P. Perdew, K. Burke, M. Ernzerhof, Generalized gradient approximation made
simple, Phys. Rev. Lett. 77 (1996) 3865e3868.
[44] P.E. Blo € chl, Projector augmented-wave method, Phys. Rev. B 50 (1994)
17953e17979.
[45] H.J. Monkhorst, J.D. Pack, Special points for Brillouin-zone integrations, Phys.
Rev. B 13 (1976) 5188e5192.