WP MCQs cess, It gives yo! sponding NCERT Textbook chapte ‘and deduct one mark for sessment is complementary part of the learning Pr een achieved or not, After going through the cores environment. Give yourself four marks for correct answer will help you plan your next step. Introduction 1. The vacuum tubes are operate generally at (a) low voltage (b) high voltage (©) low current (a) none of these. 2, Semiconductor devices (@) are small in size (b) consume low power (©) operate at low voltage (4) all of these. Classification of Metals, Conductors and Semiconductors 3, At absolute zero, Si acts as a (a) metal (b) semiconductor (©) insulator (a) none of these 4, In good conductors of electricity the type of bonding that exist is (a) Vander Walls (b) covalent (©) ionic (a) metallic. 5, Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (E,)c, (E,)s, and (Eee Which of the following statements is true? @) Es < Eee < Ec (0) Ec < Ee < Eps (© Epc? Es > Eee @ Ec= Es = Epee If the energy of a photon of sodium light (A =589 nm) equals the band gap of semiconductor, the minimum energy required to create electron hole pair (a) L1eV (b) 21 eV (c) 32eV (a) 15eV 7. The electrical conductivity of a semiconductor increases when electromagnetic radiation of wave length shorter than 2480 nm is incident on it. The band gap (in eV) for semiconductor is (a) 09) 07) (0S @ 1a 10. y- TZ 13. Cornel Extracted from NCERT 1a total insight whether the leaming outcomes hare 1 attempt these questions in exam fie wrong answer A table is given at the end, that All the Best! & Find the wavelength of light that may excite an Tlectron in the valence band of diamond to the Sonduction band. The energy gap is 5.50 eV. (a) 226 nm (b) 312 nm (c) 432 nm (4) 550 nm ‘The maximum wavelength of electromagnetic radiation, which can create a hole-electron pair in germanium. (Given that forbidden energy gap in germanium is 0.72 eV) (a) 1.7.x 10m () 13x 104m (b) 1.5.x 10m (d) 19x 10m Intrinsic Semiconductor ‘The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature (a) increases with increasing band gap (b) decreases with increasing band gap. (c) decreases with increasing temperature. (d) is independent of the temperature and band gap. ‘An intrinsic semiconductor has a resistivity of 0.50 @ m at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are 0.39 m? V-! s-! and 0.11 m? Vs respectively (a) 12x 10! m? (©) 1.9 x 10” m? In pure semiconductor, the number of conduction electrons is 6 x 10!8 per cubic metre. How many holes are therein a sample of size 1 em x lem x1 mi (a) 3x 10” (b) 6x 10" (© 3x10" (a) 6x 10" Mobilities of electrons and holes in «sample f intrinsic germanium at room temperature are 0.54 m? V-l 1 and 0.18 m2 V-! st respectively If the electron and hole densities are equ! (° 3.6 x 10! m-3 the conductivity of germanium is (b) 2.5 x 10 m> (a) 3.1.x 107 m? —(b) 2.12Sm (d) 5.65 m of pure silicon at 300 K has a length of an area of 1.0.cm. A battery of emf 2.V fed across it. The mobility of electrons fim? V-i s-! and their number density is The electron current is ; ota (b) 6.72% 109A (d) 6.72%107A 672% 10% A (B Extrinsic Semiconductor 5 an n-type silicon, which of the following ements is true? ‘ons are majority carriers and trivalent a) Electr atoms are the dopants. Jectrons are minority carriers and pentavalent atoms are the dopants. Holes are minority carriers and pentavalent atoms are the dopants. Holes are majority carriers and trivalent atoms are the dopants, If 2 small amount of antimony is added to germanium crystal (a) its resistance is increased it becomes a p-type semiconductor there will be more free electrons than holes in the semiconductor none of these semiconductor when all donor states density in the donor 16. () © @ 17. In n-type are filled, then the net charge states becomes fa) 1 (c) <1, but not zero (b) >1 (d) zero. 10*2atoms m-?. Itis doped 1p. A pure Si crystal has 5% ff pentavalent impurity by 1 ppm concentration o ‘the number of holes is (nP= 4M) (ake n, = 1.5 x 10! m) (a) 45410 mr? — (b) 45x 10m (oy 25 210m? — (A) 25x 108m 19, A semiconductor has equal electron and hole per m?, On doping sith concentration of 6 % 108 y, electron concentration Increases (0 B -the new hole concentration is (b) 2x 102 per m? (d) 4% 102 perm? certain impurity 9 10? per m (a) 2% 108 per m* (co) 4% 108 per m? 20. ‘the number density of electrons and holes in pure Silicon 27 Care equal and ts value 82.0% 10m 3, On doping with indium the holedensity increanes 0 poctottm 3, theectron density in doped s is icon 299 (b) 6.89 «10? m-? (d) 16.78 % 10% m= (a) 10410? m (c) 14 10% m p-n Junction 21. ‘the dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junction are (a). drift in forward bias, diffusion in reverse bias (b) diffusion in forward bias, drift in reverse bias (6). diffusion in both forward and reverse bias (4) drift in both forward and reverse bias 22. Inan unbiased p-n junction, holes diffuse from the p-tegion to n-region because (a) free electrons in the n-region attract them (b) they move across the junction by the potential difference (©) hole concentration in p-region is more as compared to n-region (a) all of these 23. Region without free electrons and holes in a p-n junction is (a) n-region (©) depletion region 24. Which of the following statements is incorrect for the depletion region of a diode? (a) There the mobile charges exist. (b) Equal number of holes and electrons exist, making the region neutral (c) Recombination of holes and electrons has taken place. None of these. developed in a junction diode (b) p-region (a) none of these @ 25, Potential barrier ‘opposes the flow of (a). minority carrier in both regions only (b)_-majority carriers only (©) electrons in p region (4) holes in p region. A potential barrier of 0.3 V exists across a p-1 junction. Ifthe depletion region is 1 wm wide, what is the intensity of electric field in this region? (a) 2x 108Vv! (hb) 3x 10° V mr! (©) 4x 10eVmrt — @) 5x 10° V mr [EIQ Semiconductor Diode 27, Which of the junction diodes shown here are forward biased? =v +10 (a) R sv, aaa100 i: wiv ww wy NV w w) 28. A forward biased aliode is (Ova WV (AV av ww) aN + WwW av WY ta rv 29. When the voltage drop veross a pr janetion diode is increased from 0.68 V to 0.70 Vy the change in the diode current is § mA. The dynamic resistance ot the diode is @) SQ (bh) WH () WOH Md) 2 30. ‘The V-1 characteristic of a silicon diode is shown int figure. The resistance of the diode at I, = 15 101A jo 0.7 08V(V) 1nd fa) 5Q_ (b) 10Q () 2Q (d) 202 31. The breakdown in a reverse biased p-n junction diode is more likely to occur due to (a) large velocity of the minority charge carriers if the doping concentration is small (b) large velocity of the minority charge carriers if the doping concentration is large (c)_ strong electric field in a depletion region if the doping concentration is small (d) none of these. 32, In the circuit shown if current for the diode is 20 WA, the potential difference across the diode av L F 159 is (a) 2V (b) 45V () 4V @ 25V 33. Of the diodes shown in the following figures, which one is reverse biased? oO Rb) k Me 36. 37. 3. oo al you Fiery WLC Objective HELE 10 Vy tle equivalent © Of the GrCUt shy figure between the points A and ify, ey 20.0 : “NN Ub (a) WR (b) 2 (6) 52d) og In the question number 34, the equivalent resistance between the points A and B if V, > V, is (a) 10Q (b) 202 (©) 302 a) 150 ‘The following table provides the set of values of V and I obtained for a given diode. Let the characteristics o be nearly linear, over this range, the forward and reverse bias resistance ofthe given diode respectively are po [Form biasing Reverse biasing (@ 1028x1092 (b) 2024x109 (©) 200,8x10°2 (d) 102,102 The circuit shown inthe Pua : Kan figure contains two diodes Dp, _ma each with a forward | Qe resistance of 30 @ and | with infinite backward L_4, resistance. If the battery sv is 3 V, the current through the 50 @ resistance (in ampere) is (a) zero (b) 0.01 (c) 0.02 (a) 008 ideal The circuit has two oppositely connect diodes in parallel, What is the current flowing" the circuit? 20 oy (a) 20A (b) 133A @) 171A @ we 231Ar onduc | isl | plication of Junction Diode pg os 0 Rectifier aavan ainpet om 80 Hz powerline the ple jen #8 ; UM Hv the de output of half wave aswell as OF full wave rectifier {00 Hz in the de output of half wave as well ag full wave rectifier 50 Hz in the de output of half wave and 100 Hz in de output of full wave rectifier fg) 100 He in the de output of half wave and 50 He in the de output of full wave rectifier. (b) oO na full wave junction diode rectifier the input ac hasrms value of 20 V. The transformer used isastep xptransformer having primary and secondary turn inti 1:2, The de voltage in the rectified output is (@) 122V. (b) 24V (©) 36V (d) 42 Ina half wave rectifier circuit operating from 50 Hz mains frequency, the fundamental frequency in the ripple would be f@) 25 He (b) 50 Hz (c) 70.7 Hz (d) 100 Hz ‘A sinusoidal voltage of rms value 220 V is applied toadiode and a resistor R in the circuit shown in figure, so that half wave rectification occurs. If the diode is ideal, what is the rms voltage across Ry? a. ah o Ry Output (@) s5y2V (b) 110. ©) 02 V (a) 22002 V 43 Which of the following circuits provides full wave rectification of an ac input? 6 * on input . ‘output tor Electronics: Material, Devices and Simple Circuits 301 Ad) input - output Special Purpose p-n Junction Diodes 44, What happens during regulation action of a Zener diode? (a) ‘The current through the series resistance (R,) changes. (b) The resistance offered by the Zener diode changes. (c) The Zener resistance is constant. (a) Both (a) and (b) 45. A Zener diode is specified as having a breakdown voltage of 9.1 V, with a maximum power dissipation ‘of 364 mW. What is the maximum current the diode can handle? (a) 40 mA (b) 60 mA (c) 50mA (d) 45mA $6. In the given circuit, the current through the Zener diode is 5 (b) 6.67 mA {d) 3.33 mA (a) 10mA () 5mA 47. From the Zener diode circuit shown in figure, the current through the Zener diode is sho Le Aowv fs S$e, oftputvorage 1 sv} ® (a) 34m. (b) 31.5 mA (6) 365 mA (@ 25mA 48, A Zener diode of power rating 1 W is to be used as.a voltage regulator, If Zener has a breakdown of 5 V and it has to regulate voltage which fluctuated between 3 V and 7 V, what should be the value of R, for safe operation? Rs Regulated Unregulated voltage vollage (a) 52 (@) 202 (b) 102 (©) 152302 49, A p-n photodiode is made of a material with a band gap of 2 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly (he = 1240 eV nm) (a) 1x 10" Hz (c) 10 x 10" Hz (b) 20 x 10! He (d) 5 x 10" Ha 50. Ap-nphotodiode is fabricated froma semiconductor with a band gap of 2.5 eV. The signal wavelength is (a) 6000 A (b) 6000 nm (©) 4000 nm (a) 5000 A 51. Three photo diodes D,, D, and D, are made of semiconductors having band gap of 2.5 eV, 2 eV and 3 eV, respectively. Which one will be able to detect light of wavelength 6000 A? (a) D, (b) D, © Dd, (d) D, and D, both Digital Electronics and Logic Gates 52. Boolean algebra is essentially based on (a) number (b) truth (0) logic (d)_ symbol. 53. ‘The symbolic representation of four logic gates are given here, The logic — ++ symbols for OR, NOT —[>— and NAND gates are respectively o—_—- (a) (iv), (@, (ii) 0) G), Gi), @) #—[ >— © @, Gi), Gv) (@) Gi, (iv), Gi) > 54. In the given circuit here, 4. A and B represents two c inputsand Crepresentsthe 5 output. The circuit represents > (a) AND gate (b) NOR gate (©) OR gate (a) NAND gate 55. Study the circuit shown in the “sv figure, Name the gate that the given circuit resembles. Dd (a) NAND A y (b) AND 7 (©) OR 8 (d) NOR Dd, 56. In Boolean algebra if A = 1 and B = 0, then the value of A+B is @a (b) AB (© AB (4) both (a) and (c) 57. 58. 59. 60. pt WebGs Objective NCERT at your Fingering What will be input of A and B for the Boolean expression (A+ B)-(A-B) = 1? (a) (0,0) (6) 1) © 1.0) ayy “The circuit given in figure, is equivalent to A y Be (a) AND gate (b) OR gate (c) NOT gate (d) NAND gate. ‘The combination of NAND gates is shown in figure “The equivalent circuit is ap} 7 eo (a) AND gate (b) NOR gate () OR gate (a) NOT gate. The output of given logic circuit is [= A(B-C) A+B4C A 8 a (a) A(B + C) (b) () (A+ BMA*C) (d) The truth table for the following logic circuit is A Da v o——_- AB Y| |A BY lo 0 0 Jo 0 0 fa) jo 1 1 (b) jo 1 1 oot 101 | {i an A B Y| A B 1 oo 1 oo () jo 1 o (a) jo 1 4] ro a 1 0 | Pio fia a - Select the output ¥ of the combination of get shown in figure for inputs A = 1, B= 0:4 = B= and A = 0, B = 0 respectively. soespss Semcon lecnics: Matras Devices and Spe Cit (b) (1,0, 1) @ 10 (a) (10,0) (o AD go: The given tra table is for whieh) y | y logic gate? ros (a) NAND (b) XOR opr yt (o) NOR tooo (@) OR oot gu Way by od are inputs to agate PLPLPLEUPL and xisits output, then, as per! f-L the following time graph, the |, a gate is: (a) NOT (b) AND () OR (@) NAND ‘To get output 1 at R, for the given logic gate circuit the input values must be x ‘ fs 69. a @X=L¥=0 — (b) X=LY¥=1 (@ X=0Y (@) X=0,¥=0 66, ‘The following figure shows a logic gate circuit with two inputs A and B and the output Y. The voltage waveforms of A, Band ¥ are as given. — Logic gate | circuit = — m1. ret ms ‘The logic gate is (a) NOR gate (b) OR gate (c) AND gate (d) NAND gate 67. The logic circuit shown here has the input waveforms A and B as shown. Pick out the correct, output waveform, wer LL I testa ate laa part of NC 73. 7, this topic isn tonser 303 0 ” t © PAP o AL Junction Transistor* The transfer characteristics of a base biased transistor has the operation regions, namely, cutoff, active region and saturation region. For using the transistor as an amplifier it has to operate in the (b) cutoff region (d) cutoffand saturation. (a)_ active region (c) saturation region The emitter of transistor is doped the heaviest because it (a) acts as a supplier of charge carriers (b) dissipates maximum power (c)_has a larger resistance (a) has a small resistance. ‘The heavily and lightly doped regions of a bipolar junction transistor are respectively (a) base and emitter (b) base and collector (c) emitter and base (4) collector and emitter, In a common emitter amplifier circuit using an n-p-n transistor, the phase difference between the input and the output voltages will be (a) 45° {b) 90° (c) 135° (d) 180° An oscillator is nothing but an amplifier with (a) larger gain (b) positive feedback (©) no feedback (a) negative feedback ‘The current amplification factor ct of a common base transistor and the current amplification factor Bof a common emitter transistor are not related by a ) B 1l-a d) p= 8 lta 1B,R, and rare the ac current g and the input resistance of a transistor respectively in CE configuration, th ration, the voltage and the power Sins respectively are s nm load resistance“80. 5q Fe Te) 1 mA, mA 304 2k (a) pana p? 8 "and B to) Be, Be 1 ; 2 © B x ana p( “J (@) oF wnao(Z] 5. Hf-and fare the current gain in the CB and CE configurations respectively ofthe transistor circuit, Bo of (a) 2er0 the (b) 1 (©) 2 (d) 0.5 . A transistor has a current amplification factor (current gain) of 50. Ina common emitter amplifier circuit, the collector resistance is chosen as 5 Qand the input resistance is 1. The output voltage if input voltage is 0.01 V is @ -2V (b) SV (9) -25V @ -1V ‘Two amplifier are connected one after the other in series (cascade). The first amplifier has a voltage gain 10 and the second has a voltage gain of 20. If the input signal is 0.01 V, the output ac signal will be @) div (@2vV @e6v ‘Three amplifiers X, Y and Zare connected in series. If the voltage gains of X, Y and Z are 10, 20 and 30 respectively and the input signal is 1 mV peak value, then what is the output signal voltage (peak value)? @4V &)5V | 6V @7Vv In the question number 78, what is the output signal voltage (peak value) if de supply voltage is 5 V? @4v @)5V @6Vv @7v In p-r-p transistor circuit, the collector current is Fe =10 mA. If 90% of the holes reach the collector, the 240 emitter and base currents respectively are io (a) 10mA,1mA —(b) 22 mA, 11 mA (d) 20 mA, 10 mA ‘81. A transistor connected in common emitter mode, the voltage drop across the collector is 2 V and B is 50, the base current if Ris 2 kQ is (a) 40 HA (b) 20HA (c) 30HA (d) 15 pA ‘The power gain for common base amplifier is 800 and the voltage amplification factor is 840. The collector current when base current is 1.2 mA is (a) 24mA (b) 12mA (c) 6mA (A) 3: mA ‘The current gain for a common emitter amplifier is 69. If the emitter current is 7 mA, the base current, is (a) 0.1 mA (©) 0.2 mA 77. 4v 79. waa 83. (b) mA (d) 2ma 84. 85. 86. 88. 89. 8 1, webG Objective NCERT at your Fin WWEntins ‘The potential difference across the collector of transistor, used in common emitter mode is 1.5 y, with the collector resistance of 3 KQ the emitter current is (B = 50] (a) 0.70 mA (b) 0.49 ma () Lima (4) 19 ma Inacommon emitter transistor amplifier an increase ‘of 50 WA in the base current causes an increase of 1 mA in the collector current. The change in emitter current is (a) 1050 mA (©) 5025 mA For a common emitters transistor amplifier, the audio signal voltage across the collector resistance of 2 kQ is 2 V. Suppose the current amplification factor of the transistor is 100, the base current if base resistance is 1 KQ is (a) 10MA (b) 20HA (©) SHA (@) 2yA ‘The ac current gain of a transistor is 120. What is the change in the collector current in the transistor whose base current changes by 100 HA? (a) 6mA (b) 12mA(C) 3mA (d) 24mA Inan n-p-n circuit transistor, the collector currentis 10 mA. If 80% electron emitted reach the collector, then (a). the emitter current will be 7.5 mA (b) the emitter current will be 12.5 mA. (c)_ the base current will be 3.5 mA (d) the base current will be 1.5 mA. (b) 1050 wa (d) 5025 WA A common emitter amplifier gives an output of 3 V for an input of 0.01 V. If B of the resistance is 100 and the input resistance is 1 kQ, then the collector resistance is (a) 3kQ (b) 30 kQ () 1kQ (@) 5kQ ‘The input resistance of a common emitter transistor amplifier, if the output resistance is 500 kQ, the current gain c = 0.98 and the power gain is 6.0825 x 10, is Ya) 198 (b) 3000 (©) 1009 (d) 400 Q In the circuit shown here, the transistor used has a current gain B = 100, What should &* be the base resistor R, so that V (neglect Vy)? fa) 200 x 109 Q (b) 1x 106 Q (co) 5009 (d) 2x 10°hype | ” %6, g Jhe Input resistance of a branwintor by 1000 $2 on charging, Hs base current by 10 tA, the collector cunrent increases by 2.mA, Ifa load resistance of 6 is used dn the circuit, the voltage gain of the amplifier bs (a) 100, (c) (d) 1500 A transistor has a current gain of 30, [f the collector resistance is 6 kQ, input resistance is | kQ, its (b) 500 1000 voltage gain is (a) 90 (b) 180 (c) 45 (d) 360 Ina Wansistor connected in common emitter mode, R= AKO, Ry = 1KQ, f= mA and J, = 20 pA. The voltage gain is (a) 100 (b) 200 (c) 300 (d)_ 400 Inann-p-n transistor 10!” electron enter the emitter in 10 f 2% of the electrons are lost in the base, the current amplification factor is (a) 0.02 (b) 7 (c) 33 (d) 4.9 If change of 100 JA in the base current of an -n transistor causes a change of 10 mA in its collector current, its ac current gain is (a) 50 (b) 100 (c) 200 (d) 150 . What is the voltage gain in a common emitter where input resistance is 3 Q and load amplifie stance 24 Q and B = 61? semiconductor Hectronics: Materials, Devices and Shaple Cheuits 4 99. 305 (b) 488 (d) 0 has a voltage gain of 100. The voltage (a) 4A (c) 240 An ampli gain in dB is (a) 20 dB (c) 30dB A transistor is operated in common emitter configuration at V; = 2 V. Such that a change in the base current from 100 pA to 200 yA produces a change in the collector current from 5 mA to 10 mA. ‘The current gain is (a) 100 (b) 150 (c) 75 (d) 50 (b) 40 dB (d) 50dB 100, The transfer characteristics of a base biased common =| | emitter transistor is shown in the figure. Which of the following statements are true? + (a) At V,=1 Vit can be used as an amplifier. At V, = 0.5 V, it can be used as a switch turned off. At V, = 2.5 V, it can be used as a switch turned on. All of these. oevav (b) © @