Траезистор RQA0009SXAQS

Preliminary Datasheet
RQA0009SXAQS R07DS0493EJ0200
(Previous: REJ03G1566-0100)
Rev.2.00
Silicon N-Channel MOS FET Jun 28, 2011
Features
 High Output Power, High Gain, High Efficiency
Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%
(VDS = 6 V, f = 520 MHz)
 Compact package capable of surface mounting
 Electrostatic Discharge Immunity Test
(IEC Standard, 61000-4-2, Level4)
Outline
RENESAS Package code: PLZZ0004CA-A

(Package Name : UPAK)
3
1
2 1. Gate
3
2. Source
1 3. Drain
4 4. Source
2, 4
Note: Marking is “SX”.
Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 16 V
Gate to source voltage VGSS ±5 V
Drain current ID 3.2 A
Channel dissipation Pchnote 15 W
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Note: Value at Tc = 25C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
R07DS0493EJ0200 Rev.2.00 Page 1 of 21

Jun 29, 2011
RQA0009SXAQS Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min. Typ Max. Unit Test Conditions
Zero gate voltage drain current IDSS — — 15 A VDS = 16 V, VGS = 0
Gate to source leak current IGSS — — ±2 A VGS = ±5 V, VDS = 0
Gate to source cutoff voltage VGS(off) 0.15 0.5 0.8 V VDS = 6 V, ID = 1 mA
Forward Transfer Admittance |yfs| — 3.2 — S VDS = 6 V, ID = 1.6 A
Input capacitance Ciss — 76 — pF VGS = 5 V, VDS = 0, f = 1 MHz
Output capacitance Coss — 40 — pF VDS = 6 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance Crss — 3.5 — pF VDG = 6 V, VGS = 0, f = 1 MHz
Output Power Pout — 33.1 — dBm VDS = 3.6 V, IDQ = 200 mA
— 2.0 — W f = 155 MHz,
Power Added Efficiency PAE — 65.7 — % Pin = +20 dBm (100 mW)
— 7.2 — W f = 155 MHz,
— 2.0 — W f = 360 MHz,
— 7.6 — W f = 360 MHz,
— 2.1 — W f = 465 MHz,
— 8.0 — W f = 465 MHz,
— 3.3 — W f = 465 MHz,
Power Added Efficiency PAE — 60 — % Pin = +17 dBm (50 mW)
Output Power Pout — 37.8 — dBm VDS = 6 V, IDQ = 180 mA
— 6.0 — W f = 520 MHz,
Power Added Efficiency PAE — 65 — % Pin = +25 dBm (316 mW)
Main Characteristics
Maximum Channel Power

Dissipation Curve Typical Output Characteristics
Pulse Test
Channel Power Dissipation Pch (W)
20 4
2.0 V
1.75 V
Drain Current ID (A)
15 3
1.5 V
10 2
1.25 V
5 1
VGS = 1.0 V
0 0
0 50 100 150 200 0 2 4 6 8 10
Case Temperature TC (°C) Drain to Source Voltage VDS (V)
R07DS0493EJ0200 Rev.2.00 Page 2 of 21

Jun 29, 2011
Forward Transfer Admittance

Typical Transfer Characterisitics vs. Drain Current
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance |yfs| (S)

4 10.0
VDS = 6 V VDS = 6 V
Pulse Test Pulse Test
|yfs| ID
2 1.0
0 0.1
0 0.5 1.0 1.5 2.0 0.1 1.0 10.0
Gate to Source Voltage VGS (V) Drain Current ID (A)
Input Capacitance vs. Output Capacitance vs.

Gate to Source Voltage Drain to Source Voltage
90 1000
Output Capacitance Coss (pF)
Input Capacitance Ciss (pF)
80
70
100
60
50
VDS = 0 VGS = 0
f = 1 MHz f = 1 MHz
40 10
-5 -4 -3 -2 -1 0 1 2 3 4 5 0.1 1 10
Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V)
Reverse Transfer Capacitance vs.

Drain to Gate Voltage MSG, MAG vs. Frequency
Reverse Transfer Capacitance Crss (pF)
Maximum Available Gain MAG (dB)
100 30
Maximum Stable Gain MSG (dB)
VGS = 0 VDS = 6 V
f = 1 MHz 25 ID = 180 mA
MSG
20
10 15
MAG
10
1 0
0.1 1 10 0 500 1000 1500 2000
Drain to Gate Voltage VDG (V) Frequency f (MHz)
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Jun 29, 2011
Evaluation Circuit 1 (@VDD = 3.6 & 7.0V Tuning, f = 155 MHz)
VGG VDD
C4 C5 C12 C13
R2
C11
C3
L4 C9
C6 L2 C7 L3 C10 50 Ω
R1
50 Ω C1 C2 L1 RF OUT
RF IN
C8
C1, C3, C10, C11 100 pF Chip Capacitor L1 33 nH Chip Inductor

C2 27 pF Chip Capacitor L2 3.6 nH Chip Inductor
C4, C13 1000 pF Chip Capacitor L3 7.5 nH Chip Inductor
C5, C12 1 μF/+16V Chip Tantalum Capacitor L4 8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire
C6 18 pF Chip Capacitor R1 33 Ω Chip Resistor
C7 22 pF Chip Capacitor R2 1 kΩ Chip Resistor
C8 56 pF Chip Capacitor
Output Power, Drain Current Power Gain, Power Added Efficiency

vs. Input Power vs. Input Power
40 3 40 80
Power Added Efficiency PAE (%)

PAE
Output Power Pout (dBm)
35 2.5
Power Gain PG (dB)
Pout 30 60
30 VDS = 3.6 V 2
IDQ = 200 mA PG
f = 155 MHz
25 1.5 20 40
ID
20 1
10 20
15 0.5 VDS = 3.6 V
IDQ = 200 mA
f = 155 MHz
10 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Input Power Pin (dBm) Input Power Pin (dBm)

vs. Frequency vs. Frequency
40 3 30 80
35 Pout 2.5 25 PAE 70

Power Gain PG (dB)
30 2 20 60
25 VDS = 3.6V 1.5 15 50

IDQ = 200 mA PG
Pin = +20dBm
20 ID 1 10 40
VDS = 3.6V
15 0.5 5 30
IDQ = 200 mA
Pin = +20dBm
10 0 0 20
120 130 140 150 160 170 180 190 120 130 140 150 160 170 180 190
Frequency f (MHz) Frequency f (MHz)
R07DS0493EJ0200 Rev.2.00 Page 4 of 21

Jun 29, 2011

vs. Drain to Source Voltage vs. Drain to Source Voltage
40 3 40 80

Pout (dBm)
PAE

35 Pout 2.5
Power Gain PG (dB)

30 60
30 2
25 1.5 20 40
Output Power
PG
20 ID 1
10 20
IDQ = 200 mA
15 0.5 IDQ = 200 mA
f = 155MHz
f = 155 MHz
Pin = +20dBm
Pin = +20dBm
10 0 0 0
3 3.5 4 4.5 5 3 3.5 4 4.5 5
Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V)

vs. Idling Current vs. Idling Current
40 3 40 80

PAE
Pout (dBm)
35 Pout 2.5
Power Gain PG (dB)
30 60
30 2
25 1.5 20 40
Output Power
PG
20 ID 1
10 20
VDS = 3.6V VDS = 3.6 V
15 0.5 f = 155 MHz
f = 155 MHz
Pin = +20 dBm Pin = +20 dBm
10 0 0 0
0 100 200 300 400 500 0 100 200 300 400 500
Idling Current IDQ (mA) Idling Current IDQ (mA)

40 3.0 40 80
Pout (dBm)
35 Pout 2.5
Power Gain PG (dB)
30 60
30 2.0
PG
ID
25 1.5 20 40
Output Power
20 1.0
PAE
VDS = 7 V 10 20
VDS = 7 V
15 f = 155 MHz 0.5 f = 155 MHz
IDQ = 200 mA IDQ = 200 mA
10 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
R07DS0493EJ0200 Rev.2.00 Page 5 of 21

Jun 29, 2011

40 3 30

30
Pout (dBm)
35 Pout 2.5 25 PAE

70
Power Gain PG (dB)

30 2 20 60
ID
25 1.5 15 50
Output Power
PG
20 1 10 40
VDS = 7V VDS = 7V
15 IDQ = 200 mA 0.5 5 IDQ =200 mA 30
10 0 0 20
120 130 140 150 160 170 180 190 120 130 140 150 160 170 180 190

50 4 40 80

Pout (dBm)
PAE
Pout
Power Gain PG (dB)
40 3 30 60
30 2 20 40
Output Power
ID PG
20 IDQ = 200 mA 1 10 IDQ = 200 mA 20

f = 155 MHz f = 155 MHz
10 0 0 0
2 4 6 8 10 2 4 6 8 10

40 40 80
3
Pout
Pout (dBm)
PAE
35 2.5
Power Gain PG (dB)
30 60
30 2
25 1.5 20 40
Output Power
ID
PG
20 1
10 20
VDS = 7V VDS = 7 V
15 0.5
f = 155 MHz f = 155 MHz
10 0 0 0
0 100 200 300 400 500 0 100 200 300 400 500
R07DS0493EJ0200 Rev.2.00 Page 6 of 21

Jun 29, 2011
VGG VDD
C14 C15
C5 C6
C13
C4
L4 C9 C11
C3 R1
L2 L3 C12 50 Ω
50 Ω C1 L1
RFOUT
RFIN
C7 C8 C10
C2
C1 22 pF Chip Capacitor L1 6.8 nH Chip Inductor

C2, C3,C8,C10 10 pF Chip Capacitor L2 1.0 nH Chip Inductor
C5, C12, C15 1000 pF Chip Capacitor L4 8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire
C6, C14 1 μF / +16V Chip Tantalum Capacitor R1 6.8k Ω Chip Resistor
C9, C11 12 pF Chip Capacitor

40 3 40 80

PAE
35 2.5
Power Gain PG (dB)
Pout 30 60
30 2
PG
25 1.5 20 40
20 1
ID
10 20
VDS = 3.6 V VDS = 3.6 V
15
IDQ = 200 mA 0.5 IDQ = 200 mA
f = 360 MHz f = 360 MHz
10 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30

40 3 30 80
35 Pout 2.5 25 PAE 70

Power Gain PG (dB)
30 2 20 60
VDS = 3.6V
25 1.5 15 50
IDQ = 200 mA PG
ID Pin = +20dBm
20 1 10 40
VDS = 3.6V
15 0.5 5 30
IDQ = 200 mA
Pin = +20dBm
10 0 0 20
300 320 340 360 380 400 300 350 400
R07DS0493EJ0200 Rev.2.00 Page 7 of 21

Jun 29, 2011

40 3 40 80

Pout (dBm)
PAE
35 Pout 2.5
Power Gain PG (dB)

30 60
30 2
Output Power
25 1.5 20 40
PG
20 ID 1
10 20
15 0.5 f = 360 MHz
f = 360MHz
Pin=+20dBm Pin=+20dBm
10 0 0 0
3 3.5 4 4.5 5 3 3.5 4 4.5 5

40 3 40 80

PAE
Pout (dBm)
35 Pout 2.5
Power Gain PG (dB)
30 60
30 2
VDS = 3.6V
25 f = 360 MHz 1.5 20 40
Output Power
Pin = +20 dBm

PG
20 ID 1
10 20
VDS = 3.6 V
15 0.5 f = 360 MHz
Pin = +20 dBm
10 0 0 0
0 100 200 300 400 500 0 100 200 300 400 500

40 3 40 80
PAE
35 2.5
Power Gain PG (dB)
30 60
Pout
30 2
PG
25 1.5 20 40
ID
20 1
10 20
VDS = 7 V VDS = 7 V
15 IDQ = 200 mA 0.5
IDQ = 200 mA
f = 360 MHz f = 360 MHz
10 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
R07DS0493EJ0200 Rev.2.00 Page 8 of 21

Jun 29, 2011

40 3 30 80

Pout
35 2.5 25 70
Power Gain PG (dB)

PAE

30 2 20 60
ID PG
25 1.5 15 50
20 1 10 40
VDS = 7V VDS = 7V
15 IDQ = 200 mA 0.5 5 IDQ = 200 mA 30
Pin = +25dBm Pin = +25dBm
10 0 0 20
300 350 400 300 350 400

50 4 40 80

Pout (dBm)
PAE
Power Gain PG (dB)
Pout 30 60
40 3
Output Power
30 2 20 40
ID PG
20 IDQ = 200 mA 1 10 IDQ = 200 mA 20

f = 360MHz f = 360MHz
10 0 0 0
2 4 6 8 10 2 4 6 8 10

40 3 40 80
PAE
Pout (dBm)
Pout
35 2.5
Power Gain PG (dB)
30 60
30 2
Output Power
25 1.5 20 40
ID PG
20 1
10 20
VDS = 7V VDS = 7 V
15 0.5 Pin = +25 dBm
Pin = +25 dBm
f = 360 MHz f = 360 MHz
10 0 0 0
0 100 200 300 400 500 0 100 200 300 400 500
R07DS0493EJ0200 Rev.2.00 Page 9 of 21

Jun 29, 2011
VGG VDD
C14 C15
C5 C6
C13
C4
L4 C9 C11
C3 R1
L2 L3 C12 50 Ω
50 Ω C1 L1
RFOUT
RFIN
C7 C8 C10
C2
C1 22 pF Chip Capacitor C9 12 pF Chip Capacitor

C2, C3, C7, C10 10 pF Chip Capacitor C11 2 pF Chip Capacitor
C5, C12, C15 1000 pF Chip Capacitor L2, L3 1.0 nH Chip Inductor
C6, C14 1 μF / +16V Chip Tantalum Capacitor L4 8 Turns D: 0.5 mm,f2.4mm Enamel Wire
C8 7 pF Chip Capacitor R1 6.8k Ω Chip Resistor

40 3 40 80

PAE
35 2.5
Power Gain PG (dB)
30 60
30 Pout 2
25 1.5 20 PG 40
20 1
ID
10 20
VDS = 3.6 V VDS = 3.6 V
15 0.5
f = 465 MHz f = 465 MHz
10 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30

40 3 30 80
Pout PAE
35 2.5 25 70
Power Gain PG (dB)
30 2 20 60
25 1.5 15 PG 50
20 ID 1 10 40
VDS = 3.6 V VDS = 3.6 V

15 IDQ = 200 mA 0.5 5 IDQ = 200 mA 30
10 0 0 20
440 450 460 470 480 490 440 450 460 470 480 490
R07DS0493EJ0200 Rev.2.00 Page 10 of 21

Jun 29, 2011

40 3 40 80

Pout (dBm)
PAE
35 Pout 2.5
Power Gain PG (dB)

30 60
30 2
Output Power
25 1.5 20 40
PG
20 ID 1
10 20
15 0.5 f = 465 MHz
f = 465MHz
Pin=+20dBm Pin=+20dBm
10 0 0 0
3 3.5 4 4.5 5 3 3.5 4 4.5 5

40 3 40 80

Pout (dBm)
Pout PAE
35 2.5
Power Gain PG (dB)
30 60
30 2
VDS = 3.6 V
Pin = +20 dBm
Output Power
25 1.5 20 40
ID f = 465 MHz
PG
20 1
10 20
VDS = 3.6V
15 0.5
Pin = +20 dBm
f = 465 MHz
10 0 0 0
0 100 200 300 400 500 0 100 200 300 400 500

40 3 40 80
35 2.5 PAE
Power Gain PG (dB)
30 60
30 Pout 2
PG
25 1.5 20 40
20 1
ID
10 20
VDS = 7 V VDS = 7 V
15 IDQ = 200 mA 0.5
IDQ = 200 mA
f = 465 MHz f = 465 MHz
10 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
R07DS0493EJ0200 Rev.2.00 Page 11 of 21

Jun 29, 2011

40 3 30 80

Pout PAE
35 2.5 25 70
Power Gain PG (dB)

30 2 20 60
ID
25 1.5 15 PG 50
20 1 10 40
VDS = 7V VDS = 7V
15 IDQ = 200 mA 0.5 5 IDQ = 200 mA 30
10 0 0 20
440 450 460 470 480 490 440 450 460 470 480 490

50 4 40 80

PAE
Pout (dBm)
Pout
Power Gain PG (dB)
40 3 30 60
Output Power
30 2 20 40
ID PG
20 1 10 IDQ = 200 mA 20
IDQ = 200 mA
f = 465MHz f = 465MHz
10 0 0 0
2 4 6 8 10 2 4 6 8 10

40 3 40 80
Pout (dBm)
Pout PAE
35 2.5
Power Gain PG (dB)
30 60
30 2
Output Power
25 1.5 20 40
ID
PG
20 1
10 20
VDS = 7V VDS = 7 V
15 0.5
f = 465 MHz f = 465 MHz
10 0 0 0
0 100 200 300 400 500 0 100 200 300 400 500
R07DS0493EJ0200 Rev.2.00 Page 12 of 21

Jun 29, 2011
Evaluation Circuit (f = 465 MHz@VDS=4.8V)
C7 C6 C13 C14
VG VD
R2
C5 C12
R1 L3
L1 L2 C11 50 Ω
50 Ω C1
RFOUT
RFIN
C8 C9 C10
C2 C3 C4
C1, C5, C11, C12 100 pF Chip Capacitor

C4, C9, C10 10 pF Chip Capacitor
C7, C14 1 μF / 35 V Chip Tantalum Capacitor
L1 1 nH Chip Inductor
L2 1.8 nH Chip Inductor
L3 8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire
R1 670 Ω Chip Resistor
R2 6.8 kΩ Chip Resistor
R07DS0493EJ0200 Rev.2.00 Page 13 of 21

Jun 29, 2011

40 1.6 25 100

35 1.4
PG
Power Gain PG (dB)

Pout 20 80

30 1.2
25 1.0
ID 15 60
20 0.8
15 0.6 10 40
PAE
10 0.4
VDS = 4.8 V 5 VDS = 4.8 V 20
5 IDQ = 300 mA IDQ = 300 mA
0.2
f = 465 MHz f = 465 MHz
0 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Power Gain, Power Added Efficiency

vs. Frequency Input Return Loss vs. Frequency
20 80 0
Input Return Loss RL (dB)
-5
Power Gain PG (dB)
19 70
PAE -10
18 60 -15
PG
-20
17 50 VDS = 4.8 V
VDS = 4.8 V
IDQ = 300 mA -25 IDQ = 300 mA
16 40 -30
450 455 460 465 470 475 480 450 455 460 465 470 475 480
Power Gain, Power Added Efficiency, Power Gain, Power Added Efficiency
vs. Drain to Source Voltage vs. Idling Current
21 70 21 70
PG
20 65 20 PAE 65
Power Gain PG (dB)
Power Gain PG (dB)
19 60 19 60
PAE
18 55 18 PG 55
17 50 17 50
IDQ = 300 mA VDS = 4.8 V

16 f = 465 MHz 45 16 f = 465 MHz 45
15 40 15 40
3 4 5 6 7 8 0 0.1 0.2 0.3 0.4 0.5
Drain to Source Voltage VDS (V) Idling Current IDQ (A)
R07DS0493EJ0200 Rev.2.00 Page 14 of 21

Jun 29, 2011
Evaluation Circuit (f = 520 MHz)
C6 C5 C12 C13
VG VD
R2
C4 C11
R1 L1
L2 L3 C10 50 Ω
50 Ω C1
OUT
IN
C7 C8 C9
C2 C3
C1, C4, C10, C11 100 pF Chip Capacitor

C6, C13 1 μF Chip Tantalum Capacitor
L1 8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire
L2 1 nH Chip Inductor
L3 1.8 nH Chip Inductor
R1 670 Ω Chip Resistor
R2 6.8 kΩ Chip Resistor
R07DS0493EJ0200 Rev.2.00 Page 15 of 21

Jun 29, 2011

40 1.6 25 100

Pout (dBm)
35 1.4
Pout
Power Gain PG (dB)

20 80

30 1.2 PG
25 1.0
15 60
ID
20 0.8 PAE
Output Power
15 0.6 10 40
10 VDS = 6 V 0.4
5 VDS = 6 V 20
f = 520 MHz f = 520 MHz
5 0.2
0 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Power Gain, Power Added Efficiency

vs. Frequency Input Return Loss vs. Frequency
20 80 0
Input Return Loss RL (dB)
PAE
Power Gain PG (dB)
15 60 -5
PG
10 40 -10
5 VDS = 6 V 20 -15 VDS = 6 V

0 0 -20
450 470 490 510 530 550 450 470 490 510 530 550
Power Gain, Power Added Efficiency, Power Gain, Power Added Efficiency
vs. Drain to Source Voltage vs. Idling Current
20 70 20 80
PAE
Power Gain PG (dB)
Power Gain PG (dB)
15 60 15 75
PG
PG
10 50 10 PAE 70
5 40 5 65
IDQ = 180 mA VDS = 6 V
f = 520 MHz f = 520 MHz
0 30 0 60
3 4 5 6 7 8 9 0 0.1 0.2 0.3 0.4 0.5
Drain to Source Voltage VDS (V) Idling Current IDQ (A)
R07DS0493EJ0200 Rev.2.00 Page 16 of 21

Jun 29, 2011
S11 Parameter vs. Frequency S21 Parameter vs. Frequency
.8 1 90° Scale: 5 / div.

1.5
.6 120° 60°
2
.4
3
4 150° 30°
.2 5
10
0 .2 .4 .6 .8 1 1.5 2 3 45 10 180° 0°
-10
-.2 -5
-4
-150° -30°
-3
-.4
-2
-.6 -120° -60°
-.8 -1.5
-1 -90°
Test condition: Test condition:

VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω
100 to 1000 MHz (50 MHz step) 100 to 1000 MHz (50 MHz step)

90° Scale: 0.01 / div. .8 1
1.5
120° 60° .6
2
.4
3
150° 30° 4
.2 5
10
180° 0 .2 .4 .6 .8 1 1.5 2 3 45 10
0°
-10
-.2 -5
-4
-150° -30°
-3
-.4
-2
-120° -60° -.6
-.8 -1.5
-90° -1

VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω VDS = 6 V, IDQ = 180 mA, ZO = 50 Ω
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Jun 29, 2011
.8 1 90° Scale: 5 / div.

1.5
.6 120° 60°
2
.4
3
4 150° 30°
.2 5
10
0 .2 .4 .6 .8 1 1.5 2 3 45 10 180° 0°
-10
-.2 -5
-4
-150° -30°
-3
-.4
-2
-.6 -120° -60°
-.8 -1.5
-1 -90°

VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω

90° Scale: 0.01 / div. .8 1
1.5
120° 60° .6
2
.4
3
150° 30° 4
.2 5
10
180° 0 .2 .4 .6 .8 1 1.5 2 3 45 10
0°
-10
-.2 -5
-4
-150° -30°
-3
-.4
-2
-120° -60° -.6
-.8 -1.5
-90° -1

VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω VDS = 4.8 V, IDQ = 300 mA, ZO = 50 Ω
R07DS0493EJ0200 Rev.2.00 Page 18 of 21

Jun 29, 2011
S Parameter
(VDS = 6 V, IDQ = 180 mA, Zo = 50 )
S11 S21 S12 S22
f (MHz) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.)
100 0.868 -154.0 9.85 88.8 0.019 1.2 0.706 -166.8
150 0.861 -159.4 5.42 77.2 0.018 -6.3 0.725 -168.9
200 0.882 -163.9 3.64 68.2 0.016 -14.1 0.755 -170.6
250 0.892 -166.8 2.64 58.5 0.016 -19.2 0.768 -170.6
300 0.899 -169.5 2.06 51.8 0.014 -22.1 0.792 -171.2
350 0.910 -171.6 1.61 45.1 0.013 -27.2 0.805 -171.5
400 0.918 -173.4 1.28 40.3 0.013 -29.3 0.827 -172.2
450 0.926 -175.2 1.04 36.0 0.011 -34.1 0.840 -173.1
500 0.932 -176.8 0.84 31.8 0.010 -33.1 0.855 -173.8
550 0.936 -178.2 0.73 28.8 0.009 -34.5 0.869 -174.6
600 0.940 -179.5 0.62 26.4 0.008 -34.6 0.880 -175.6
650 0.941 179.2 0.54 23.1 0.007 -36.5 0.892 -176.5
700 0.944 178.1 0.45 20.2 0.006 -32.7 0.901 -177.3
750 0.945 176.9 0.41 18.3 0.006 -32.0 0.906 -178.0
800 0.944 175.9 0.37 16.4 0.005 -25.3 0.915 -179.4
850 0.944 174.6 0.31 13.9 0.004 -22.3 0.919 180.0
900 0.943 173.4 0.30 12.1 0.004 -15.2 0.929 178.9
950 0.943 172.3 0.26 10.6 0.003 0.3 0.930 178.1
1000 0.946 171.1 0.23 8.6 0.003 9.1 0.936 177.2
1050 0.949 170.2 0.22 7.3 0.003 20.6 0.940 176.5
1100 0.951 169.4 0.21 6.5 0.004 36.9 0.943 175.5
1150 0.952 168.7 0.18 5.3 0.004 40.3 0.944 174.7
1200 0.952 167.8 0.18 4.3 0.004 52.0 0.950 174.1
1250 0.952 167.0 0.16 3.7 0.005 53.2 0.951 173.3
1300 0.952 166.2 0.14 2.2 0.005 56.8 0.949 172.6
1350 0.952 165.4 0.14 1.3 0.006 60.9 0.956 171.7
1400 0.952 164.6 0.13 0.8 0.006 64.0 0.958 171.0
1450 0.952 164.0 0.12 0.1 0.007 62.2 0.957 170.3
1500 0.952 163.3 0.11 -0.8 0.008 65.4 0.956 169.5
1550 0.952 162.1 0.11 -1.8 0.008 65.9 0.959 168.5
1600 0.952 160.8 0.10 -2.7 0.009 65.6 0.960 168.2
1650 0.952 159.7 0.10 -3.6 0.009 65.9 0.960 167.4
1700 0.952 158.5 0.09 -4.5 0.010 66.6 0.962 166.4
1750 0.952 157.3 0.08 -4.7 0.010 66.2 0.967 165.8
1800 0.952 156.4 0.08 -5.0 0.011 66.5 0.968 165.3
1850 0.952 155.7 0.08 -4.7 0.011 66.5 0.965 164.5
1900 0.953 154.7 0.07 -4.9 0.012 67.0 0.967 163.7
1950 0.958 153.9 0.07 -5.2 0.012 67.0 0.976 163.2
2000 0.965 153.6 0.07 -4.6 0.013 65.5 0.972 162.9
2050 0.963 153.3 0.07 -4.9 0.013 65.4 0.972 161.9
2100 0.956 152.9 0.06 -4.2 0.014 65.3 0.976 161.0
2150 0.950 152.2 0.06 -3.5 0.014 65.2 0.981 160.7
2200 0.944 151.6 0.06 -3.8 0.015 63.9 0.977 160.1
2250 0.936 150.7 0.06 -3.5 0.015 63.9 0.977 159.5
2300 0.932 149.3 0.05 -3.4 0.016 63.0 0.978 158.9
2350 0.932 148.1 0.05 -3.6 0.016 62.8 0.981 158.4
2400 0.929 147.3 0.05 -3.0 0.017 63.0 0.977 158.0
2450 0.923 146.3 0.05 -3.6 0.017 61.3 0.977 157.2
2500 0.917 144.9 0.05 -3.0 0.017 61.8 0.980 156.8
R07DS0493EJ0200 Rev.2.00 Page 19 of 21

Jun 29, 2011
S Parameter
(VDS = 4.8 V, IDQ = 300 mA, Zo = 50 )
S11 S21 S12 S22
f (MHz) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.) MAG ANG (deg.)
100 0.772 -157.0 9.63 88.9 0.013 -1.0 0.776 -172.1
150 0.794 -162.8 5.54 79.0 0.013 -6.3 0.784 -173.8
200 0.812 -167.3 3.91 71.6 0.012 -11.1 0.799 -174.8
250 0.818 -170.4 2.98 64.7 0.011 -13.5 0.805 -174.8
300 0.824 -173.1 2.36 59.1 0.011 -15.2 0.818 -175.0
350 0.831 -175.0 1.92 53.6 0.011 -20.4 0.824 -175.1
400 0.836 -176.6 1.60 48.7 0.010 -21.4 0.837 -175.4
450 0.841 -178.3 1.36 44.8 0.009 -23.3 0.843 -175.8
500 0.848 -179.9 1.15 40.5 0.008 -22.9 0.859 -176.8
550 0.851 179.0 1.00 37.1 0.008 -22.2 0.868 -177.1
600 0.851 177.7 0.87 33.9 0.007 -24.8 0.874 -177.4
650 0.852 176.3 0.77 30.7 0.006 -24.2 0.887 -177.8
700 0.854 174.7 0.69 27.9 0.006 -20.5 0.896 -178.8
750 0.858 173.3 0.60 24.8 0.005 -18.2 0.901 -179.1
800 0.865 171.9 0.54 22.3 0.005 -15.1 0.905 -179.8
850 0.873 170.8 0.49 20.2 0.005 -12.2 0.911 179.5
900 0.878 169.8 0.45 17.9 0.004 -1.7 0.918 178.9
950 0.880 168.8 0.41 16.1 0.004 4.3 0.922 178.3
1000 0.882 167.7 0.37 14.2 0.004 11.2 0.932 177.8
1050 0.886 166.5 0.35 12.4 0.004 21.6 0.931 177.1
1100 0.889 165.5 0.32 10.7 0.004 29.8 0.935 176.5
1150 0.893 164.4 0.29 8.9 0.004 33.2 0.939 175.8
1200 0.898 163.3 0.27 7.5 0.004 40.9 0.944 175.1
1250 0.902 162.4 0.26 6.2 0.005 46.7 0.943 174.6
1300 0.901 161.3 0.23 4.7 0.005 50.8 0.948 174.1
1350 0.902 160.0 0.22 3.3 0.005 54.5 0.948 173.4
1400 0.904 158.7 0.21 1.8 0.006 57.8 0.954 173.1
1450 0.907 157.7 0.19 0.4 0.006 55.3 0.954 172.5
1500 0.904 156.5 0.18 -0.8 0.007 60.5 0.953 171.6
1550 0.905 155.1 0.17 -2.4 0.007 62.1 0.958 171.0
1600 0.912 153.8 0.16 -3.1 0.007 61.1 0.959 170.7
1650 0.915 152.8 0.15 -4.2 0.008 64.3 0.956 170.4
1700 0.919 151.5 0.14 -5.8 0.008 63.2 0.958 169.3
1750 0.926 149.9 0.14 -6.8 0.009 62.7 0.964 168.9
1800 0.938 148.8 0.13 -7.8 0.009 63.0 0.965 168.4
1850 0.942 147.9 0.13 -8.6 0.010 62.6 0.963 167.8
1900 0.942 146.7 0.12 -9.3 0.010 61.9 0.965 167.0
1950 0.945 145.5 0.11 -10.2 0.010 63.8 0.968 166.6
2000 0.946 144.7 0.11 -10.6 0.011 62.4 0.965 166.3
2050 0.942 143.7 0.11 -11.2 0.011 62.2 0.969 165.5
2100 0.939 142.3 0.10 -11.8 0.012 61.2 0.973 164.9
2150 0.940 140.9 0.10 -12.5 0.012 62.0 0.974 164.6
2200 0.942 139.8 0.09 -13.3 0.012 61.3 0.974 164.2
2250 0.939 138.3 0.09 -14.3 0.013 59.2 0.974 163.4
2300 0.937 136.8 0.08 -15.3 0.013 59.6 0.976 163.0
2350 0.937 135.4 0.08 -16.3 0.014 59.8 0.977 162.9
2400 0.935 134.1 0.08 -17.5 0.014 58.9 0.972 162.0
2450 0.932 132.8 0.07 -18.1 0.014 57.9 0.975 161.5
2500 0.931 131.3 0.07 -18.7 0.014 57.7 0.977 161.2
R07DS0493EJ0200 Rev.2.00 Page 20 of 21

Jun 29, 2011
Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
UPAK SC-62 PLZZ0004CA-A UPAK / UPAKV 0.050g Unit: mm
4.5 ± 0.1
1.5 ± 0.1
1.8 Max 0.44 Max (1.5)
0.4
2.5 ± 0.1
φ1
4.25 Max
(2.5)
0.53 Max
(0.2)
(0.4)
0.48 Max 0.44 Max
0.8 Min
1.5 1.5
3.0
Ordering Information
Orderable Part Number Quantity Shipping Container
RQA0009SXTL-E 1000 pcs. 178 mm reel, 12 mm emboss taping
R07DS0493EJ0200 Rev.2.00 Page 21 of 21

Jun 29, 2011
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
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technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
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assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
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(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
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© 2011 Renesas Electronics Corporation. All rights reserved.

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Preliminary Datasheet

RENESAS Package code: PLZZ0004CA-A

Note: Marking is “SX”.

Absolute Maximum Ratings

R07DS0493EJ0200 Rev.2.00 Page 1 of 21

Maximum Channel Power

Case Temperature TC (°C) Drain to Source Voltage VDS (V)

R07DS0493EJ0200 Rev.2.00 Page 2 of 21

Forward Transfer Admittance

Forward Transfer Admittance |yfs| (S)

Gate to Source Voltage VGS (V) Drain Current ID (A)

Input Capacitance vs. Output Capacitance vs.

Reverse Transfer Capacitance vs.

Maximum Available Gain MAG (dB)

Drain to Gate Voltage VDG (V) Frequency f (MHz)

R07DS0493EJ0200 Rev.2.00 Page 3 of 21

Evaluation Circuit 1 (@VDD = 3.6 & 7.0V Tuning, f = 155 MHz)

C1, C3, C10, C11 100 pF Chip Capacitor L1 33 nH Chip Inductor

Output Power, Drain Current Power Gain, Power Added Efficiency

Power Added Efficiency PAE (%)

Input Power Pin (dBm) Input Power Pin (dBm)

Output Power, Drain Current Power Gain, Power Added Efficiency

35 Pout 2.5 25 PAE 70

25 VDS = 3.6V 1.5 15 50

Frequency f (MHz) Frequency f (MHz)

R07DS0493EJ0200 Rev.2.00 Page 4 of 21

Output Power, Drain Current Power Gain, Power Added Efficiency

Power Added Efficiency PAE (%)

Drain Current ID (A)

Power Gain PG (dB)

Output Power, Drain Current Power Gain, Power Added Efficiency

Power Added Efficiency PAE (%)

Idling Current IDQ (mA) Idling Current IDQ (mA)

Output Power, Drain Current Power Gain, Power Added Efficiency

Input Power Pin (dBm) Input Power Pin (dBm)

R07DS0493EJ0200 Rev.2.00 Page 5 of 21

Output Power, Drain Current Power Gain, Power Added Efficiency

Power Added Efficiency PAE (%)

35 Pout 2.5 25 PAE

Power Gain PG (dB)

Frequency f (MHz) Frequency f (MHz)

Output Power, Drain Current Power Gain, Power Added Efficiency

Power Added Efficiency PAE (%)

Power Gain PG (dB)

20 IDQ = 200 mA 1 10 IDQ = 200 mA 20

Output Power, Drain Current Power Gain, Power Added Efficiency

Power Gain PG (dB)

Idling Current IDQ (mA) Idling Current IDQ (mA)

R07DS0493EJ0200 Rev.2.00 Page 6 of 21

Evaluation Circuit 1 (@VDD = 3.6 & 7.0V Tuning, f = 360 MHz)

C1 22 pF Chip Capacitor L1 6.8 nH Chip Inductor

Output Power, Drain Current Power Gain, Power Added Efficiency

Power Added Efficiency PAE (%)

Input Power Pin (dBm) Input Power Pin (dBm)

Output Power, Drain Current Power Gain, Power Added Efficiency

35 Pout 2.5 25 PAE 70

Frequency f (MHz) Frequency f (MHz)

R07DS0493EJ0200 Rev.2.00 Page 7 of 21

Output Power, Drain Current Power Gain, Power Added Efficiency

Power Added Efficiency PAE (%)

Drain Current ID (A)

Power Gain PG (dB)

Output Power, Drain Current Power Gain, Power Added Efficiency