Department of Electronic Engineering

ANALOGUE ELECTRONICS 1A – (ANLA 101/ANLE101) Worksheet 1

SEMICONDUCTOR THEORY

1. Draw a fully labelled Energy band diagram for pure silicon material and briefly discuss
conduction property of silicon.
2. With the aid of a diagram discuss concept of hole and electron flow
3. Explain Conventional current direction and the reason for its use in electrical and electronic
circuits
4. Differentiate between an Intrinsic and extrinsic silicon material.
5. What is the reason for doping silicon or germanium material.
6. Discuss process of doping to create a ‘n’ and ‘p’ material of silicon.
7. With the aid of a labelled diagram describe the resulting effect on the depletion region at the pn
junction structure or material , when:-
7.1 an external forward biasing voltage is applied
7.2 a reverse biasing external voltage is applied
8. What are the two mechanisms of breakdown in a PN junction ?
9. Under what biasing conditions do these breakdown occur and state the doping density of the PN
junction.
10. Name the two types of capacitances that exist across a PN junction and explain each type using
characteristic curves.