ATE HERRE FARA A Advanced Technology Electronies CO., LID. TO3PN Plastic-Encapsulate Transistors D4515 TRANSISTOR(NPN) ABSOLUTE MAXIMUM RATINGS (‘Ta=25'C) aes Characteristic Symbol} Value | Unit Collector-Base Voltage vero | 700 Vv Collector-Emitter Voltage | Vero | 400 Vv mitter-Base voltage VEBO 9 v 2 Collector Current Ie 15 A a Collector Power Dissipation | Pe 120 w Junction Temperature Tj 150 c TO-3PN Storage Temperature Tsig | -55~+150| °C ELECTRICAL CHARACTERISTICS (Ta=25°C , unless otherwise specified) Characteristic Symbol Test conditions | MIN | TYP | MAX | Unit Collector -base breakdown voltage | V(BR)cao 000HA JtE=0 | 700 v *Collector -emitter Sustaining Voltage | V(BR)cEO Ic=10mA ,1B=0. 400 Vv Emitter cut-off current leo veB=9V, IC=0 10 | nA hFR() |VCE=5V, _IC=2A 15 50 DC current gain hFR(2)_|VCE=5V, _IC=5A 10 hFR(3) _|WcE=5V, IC=10A_|_ 8 Collector -emitter saturation voltage Ver(sat) |TC=10A, IR=2A 1 v Base-emitter saturation voltage Var(sat) |TC=10A, IB=2A 1.5| Vv Base Emitter Voltage Var(on) IE= 2000 mA 3 |v Current Gain Bandwidth Product fr VCE=10V, Ic=0.5A | 4 wu Turn On Time Ton hs Storage Time ts ver=24V 106A, 3 | os Fall Time tf TBi=-TB2=1. 24 0.7 | ps ——— ATE HARE TARA A] ‘sinced Tel lets 7D——— [| sinweramaa Advanced Technology Electronics CO., LID. Typical Characteristics D4515 Tens - sean Tp — AEE Sie PMS RRS BSS SHO LN jane: 0.0 aes 0 20 40 60 8 100 120 140 160 ~ Ic RELRIEE (mA) . Te BRR CCD SOE ALARA i 5 wn ye ae) e ie wo B & 8 ® zm i % w0 a % a4 Eo s i 2 7 er 2 x t * hs : is * 4 RB GM le (mA) SAUR-RITHLBIE VCE (V) ibe Te25 CH= RET ee Hag BH aRERH 10 VCE (V) ——_ ATE s#se870e08 —____——— [JF sensetamaa Advanced Technology Electronies CO., LID. TO-3PN JVERYTEI fits mm TO-3PN 19, 9540.2 19.65+0.2