Z ibo Seno Electronic Engineering Co., Ltd.

A1 – A7
1.0A SURFACE MOUNT GLASS PASSIVATED DIODE
Features
! Glass passivated device SOD - 123FL
! Ideally Suited for Automatic Assembly
Cathode Band
! Low Forward Voltage Drop, High Efficiency Top View
! Surge Overload Rating to 25 A Peak
! Low Power Loss

1.0±0.2
1.8± 0.2
! Ultra-Fast Recovery Time
! Plastic Case Material has UL Flammability
! Classification Rating 94V-O
















































































2.6
±


0.2

1.0± 0.15
1.0± 0.15
Mechanical Data
! Case: SOD-123FL, Molded Plastic
0.7±0.3
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.01 grams (approx.)
! Lead Free: For RoHS / Lead Free Version
3.6±0.2

Dimensions in millimeters

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

SOD SOD SOD SOD SOD SOD SOD

Characteristic Symbol
4001 4002 4003 4004 4005 4006 4007 UNITS
Device marking code A1 A2 A3 A4 A5 A6 A7

Peak Repetitive Reverse Voltage VRRM

Working Peak Reverse Voltage VRWM 50 100 200 400 600 800 1000 V
DC Blocking Voltage VR

RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 800 V

Average Rectified Output Current @TL = 100°C IO 1. 0 A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on IFSM 25 A
rated load (JEDEC Method)

Forward Voltage @IF = 1.0A VFM 1.0 V

Peak Reverse Current @TA = 25°C 5

IRM µA
At Rated DC Blocking Voltage @TA = 100°C 50

Typical Junction Capacitance (Note 2) Cj 15 pF

Typical Thermal Resistance (Note 3) R
JL 30 °C/W

Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C

Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.

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 Z ibo Seno Electronic Engineering Co., Ltd.

A1 – A7



1.0 10
I(AV), AVERAGE FWD RECTIFIED CURRENT (A)

IF, INSTANTANEOUS FWD CURRENT (A)

0.8

1.0
0.6

0.4
0.1

0.2

Single phase half-wave Tj = 25°C

60 Hz resistive or inductive load Pulse width = 300 µs
0 0.01
25 50 75 100 125 150 175 200 0.6 0.8 1.0 1.2 1.4
TA, AMBIENT TEMPERATURE (°C) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Derating Curve Fig. 2 Typical Forward Characteristics
30 100
IFSM, PEAK FORWARD SURGE CURRENT (A)

Tj = 25°C
Pulse Width 8.3ms
f = 1MHz
Single Half-Sine-Wave
(JEDEC Method)
Cj, CAPACITANCE (pF)

20

10

10

0 1
1 10 100 1 10 100
NUMBER OF CYCLES AT 60 Hz VR, REVERSE VOLTAGE (V)
Fig. 3 Peak Forward Surge Current Fig. 4 Typical Junction Capacitance

trr
+0.5A
50Ω NI (Non-inductive) 10Ω NI

Device
Under (-)
Test 0A
(+)
50V DC Pulse
Approx Generator -0.25A
(-) (Note 2)

1.0Ω (+)
Oscilloscope
NI (Note 1)

Notes: -1.0A
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω. Set time base for 5/10ns/cm

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

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