TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (x-MOSII.5) 2S8K1120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Unit in mm © Low Drain-Source ON Resistance: Rpg (ON)=1.50 (Typ.) © High Forward Transfer Admittance : [Ygl=4.08 (Typ.) aU 35 © Low Lekage Current: Ipgg=300/A (Max.) (Vpg=800V) wl "gl © Enhancement-Mode — : V¢h=1.5~8.5V (Vpg=10V, Ip=1mA) a) a Ey * MAXIMUM RATINGS (Ta =25°C) 1o!8hs i CHARACTERISTIC sympo. | RravinG | uNrr |] 54:02 saz Drain Source Voltage Voss] to Tv] 338 Drain-Gate Voltage (RGg=20kM | VpGRr_| 1000 v_|| 2 Gate-Source Voltage Vass £20 Vv DG, 1p 3 Drain Current A 1. Gare Pulse pp 24 2. DRAIN (HEAT SINK) Drain Power Dissipation (Te=25°C) | Pp 150 W 3._ SOURCE (Channel Temperature Toh 150 =0_|lyEpEc = Storage Temperature Range Tate =35~150 | C_| feay Sees (TOSHIBA 2-1601B THERMAL CHARACTERISTICS Weight: 46g CHARACTERISTIC symBor | Max. UNIT [Thermal Resistance, Channel to Case Run (chee) [0.888 [CTW [Thermal Resistance, Channel to Ambient | Reh (cha) | 50 [°C/W. This transistor is an electrostatic sensitive device. Please handle with caution. 961001 © TOHaA F copnaly wornp fo, mera the Gualty and the Tlahiny of & piwiuce_ Newerthaee cemiandumor davcer general can HUTGR arducte 10 Sesare andar of tet. and'to stoi auadont im ch & matoncton of fol of 2 FOShiea prod cud atte 1 of humor ebay ‘nur oF mage to prope in developing Jour cespr, plea ersue thar TOSKBA.prosutae. eed win specie pera ranger a at finn the ort rare pods spechetons As, ane Keep mind te precautions a condone on he SBSRURsemonducorReisbiry Mandbooe © ConcG ATEN far ap nirgernents of alsa fapery she it the Bes ps tay esl he He ue: No Boone's Grated © TheTntomation contained herein & subject to change wihout nove oe 7998-07-24 115TOSHIBA 2SK1120 ELECTRICAL CHARACTERISTICS (Ta=25°C) cHARACTERISTIC | SYMBOL ‘TEST CONDITION wan, | Typ. |max. uNrr Gate Leakage Current Ta == [E100] ak Drain Cut-off Current Iss = [=F 300] a Drain-Source _ 7 Breakiewn Voltage IV eR) Dss|Ip=10mA, Vgg=0V roo} — | —| v Gate Threshold Voltage Vin [Vps=i0V, Ip=imA 15 — | 35] Vv Drain-Source ON Resistance | Rps (on) [Vas=10V, Ip=4A = [is] is} 0 Forward Transfer we Xl |Vps=20V, 1p=4a 20| 40| —| s Taput Capacitance Gis = [1300 = Reverse Transfer - =ov, f= Copecttance Cres | Vpg=25V, Veg=ov, f=1MHz | — | 100) — | pF Output Capacitance Coss = [380 = Tp=4A Rise Time te 10v Vour| — | | — Vos. wil , Irurn-on Time | ton RL —| | — Switching S =1000 ns [ime Fall Time t < —| 2] — Vpp=400V Vin : tr, <5ns, Turn-off Time | tof | Duty =1%, ty=10x8 — | 100} — PTotal Gate Charge Gate- ° Q& — | 120] - Source Plus Gate-Drain) . Gate Source Charge Qq__] VDD=400V, Veg=10V, Ip=8A | Tao — |e Gate-Drain Miller”) Charge | Qea =| 50] = SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25°O) CHARACTERISTIC | SYMBOL ‘TEST CONDITION wan. | yp. |Max. UNIT Gentnuous Dra Reverse _ _~T_T sla Pulse Drain Reverse Current | IpRP- = == aya Diode Forward Voltage Vpsr lipa=8A, Vag=0v = [= ist v MARKING [TOSHIBA « Lot Number Kino TYE Month (Starting from Alphabet A) am 0 font ng from Alphabe UU Year (Last Number of the Christian Era) 1998-07-24 215TOSHIBA 2SK1120 i ARENT Ip (A) i va FORWARD TRANSFER ADMITTANCE Ip - Vos Ip - Vos Connon . nea a Yos Tt yw 0a Blo DRAINSOURCE VOLTAGE. Vos WW) DRAINSOURCE VOLTAGE. Vos Ip - Vos Vos - Vos | common Connon Yos"e0v Z Tena g 5 i | ° er) °c «8 2 Wm GATR-SOURCE VOLTAGE. Vos > CGATESOURCE VOLTAGE Vas.) Wid = tp : Rps(on) = ID ConnroN pee - sounce Za a ee Vos=10¥ 5 ‘COMMON z [pws Source 3 a 1 7 o i Te DRAIN CURRENT Ip) DRAIN CURRENT Ip) 1998-07-24 3/5TOSHIBA EDSON) DRAIN SOURCE ON RESISTANCE. i i i 2SK1120 D3(ON) ~ Te Ipr - Vos Connon souRce 2 [conmox source Vos=i0¥ z Ip=8h. 3 8 A 2 a z i itt 5 Sa 9 a CASE TEMPERATURE, Te C0) DRAINSOURCE VOLTAGE Vos «> CAPACITANCE ~ Vos, SWITCHING TIME tp 100 aH : Dory cxeunzosx 1D vour| so VIN Ste yoy YW a a - ols ™ é tn 2 a z 4 z toa, 209] conuon source z Vos0¥ E to feta & “a ‘se DRAINSOURCE VOLTAGE. Vos «> DRAIN CURRENT Ip (A) Vin - Te Pp - Te 16 ‘connow sun : — a * a oa oes 300 ‘CASE TEMPERATURE Te (0) (CASE TEMPERATURE Te ¢C) 7998-07-24 415TOSHIBA DRAIN SOURCE VOLTAGE pg. (W) THPEDANCE unio Ranh) £8 Toy 1007 DYNAMIC INPUT/ OUTPUT (CHARACTERISTICS. TOTAL GATE CHARGE Qg (2) SINGLE PULSE: 10m 2SK1120 1000 T 10 PULSE WIDTH ty) ‘GATE-SOURCE VOLTA DRAIN CURRENT py ol ool SAFE OPERATING AREA Ip MAK (PULSED) 100 q (ConmINvOUS) 1m DC OPERATION » A SINGLE NONREPETITVE, Cores mst be dete gary wth ineeease in tomperare ‘pss MAX, i 3100 0000 DRAINSOURCE VOLTAGE Vps «W) 7998-07-24 _5/5