(0-92 Plastic-Encapsulate Transistors Q “mo” — ote i TO-92 | 2.COLLECTOR H 3.BASE 123 2SC2001 TRANSISTOR(NPN) ewer ldiéeipation Pow: 0.6W (Tamb=; vc) Collector current lew; 0.7A Géllector-base voltage Voor 1: 30V (pe ratitigiand storage junction temperature range Ta.Tag: -55T to + 1500 ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) Symbol | _Test conditions. MIN: | MAX | Collector-base breakdown voltage Verves0 le= 1001 A, =o 30 v Collector-emitter breakdown voltage Venyceo c= 10 mA, l=0 25 v Emitter-base breakdown voltage Ver e00 le= 4001 A, lo=0 5 v Collector cutoff current keno Ves= 30, le=0 o1 | ¥A Collector cutoff current lero Vee= 20 V, a=0 o1 | wa Emitter cutoff current exo \Ves= 5 V,le=0 o1 | uA | DC current gain bre Voe= 1 V, le= 100 mA 90 400, Collector-emitter saturation voltage Vorst os |v Base-emitter saturation voltage Voces | 12 |v Transition frequency f 0 Miz 1 Rank M L K Range 90-180 135270 200-400Typical Characteristics TOTAL POER DISSIPATION VS AMBIENT TEMPERATURE TTT & PT-TOTAL POWER DISSIPATION 7 i | t | J = oo a5 180 Ta: Ambient Temgeratre"C COLLECTOR CURRENT vs. COLLECTOR To EMITTER VOLTAGE 100 $3 8 Ie-COLLECTOR CURRENT -mA att 23 0 ‘Vor COLLECTOR TO EMITTER VOLTAGE -V v FI-GAIN BANDMDTH PRODUCT Mi IC-COLLECTOR CURRENT mA 1000 00] SAFE OPERATING AREA as Vex COLLECTOR TO EMITTER VOLTAGE-V COLLECTOR CURRENT ve BASE TO EMITTER VOLTAGE s8 le- COLLECTOR CURRENT. ° 1000 3g og 05 00 07 08 OS 1074 \oe-BASE TO EMITTER VOLTAGE -V GiaN BanDenoTH PRODUCT \WeEMITTER CURRENT 100 2s Se-ENITTER CURRHET mA ‘00-60 -100 Ie Colector Current ma 3 g : /E (at BASE SATURAT vee oor 28C2001 COLLECTOR CURRENT vs, COLLECTOR TO EMITTER VOLTAGE Oba ae a Voe—Colectar to Emer Votage—v Fo Be CURRENT GAIN, BASE AND COLLECTOR SATURATION VOLIAGE v8: COLLECTOR CURRENT iSaole'| rarees +9 os 2001 i oF eo 00 1e-COLLECTOR CURRENT mA 000 teeDC CURRENT GAIN