Instructor’s Resource Manual to accompany ELECTRONIC DEVICES, Sixth Edition and ELECTRONIC DEVICES: ELECTRON FLOW VERSION, Fourth Edition Thomas L. Floyd aoniate RENE Upper Saddle River, New Jersey Columbus, OhioCopyright © 2002 by Pearson Education, Inc., Upper Saddle River, New Jersey 07458. All rights reserved. Printed in the United States of America. This publication is protected by Copyright and permission should be obtained from the publisher prior to any prohibited reproduction, storage in a retrieval system, or transmission in any form or by any means, electronic, mechanical, photocopying, recording, of likewise. For information regarding permission(s), write to: Rights and Permissions Deparument. Instructors of classes using Floyd, Electronic Devices, Sixth Edition, and Blecironic Devices: Electron Flow Version, Fourth Edirion, may reproduce material from the instructor's resource manual for classroom use 10987654321 Prentice pera ISBN 0-13.092257-Contents Solutions for End-of-Chapter Problems Chapter 1 3 Chapter 2 Chapter 3 18 Chapter 4 26 Chapter 5 35 Chapter 6 46 Chapter 7 61 Chapter 8 2 Chapter 9 79 Chapter 10 87 Chapter 11 100 Chapter 12 107 Chapter 13 19 Chapter 14 126 Chapter 15 134 Chapter 16 140 Chapter 17 145 Chapter 18 151 Results for System Applications 157 Summary of EWB/Multisim Circuit Files 167 Test ItemChapter 1 Introduction Section 1-1 Atomic Structure 1. Anatom with an atomic number of 6 has 6 electrons and 6 protons 2 The third shell of an atom can have 2n’ = 2(3)* = 18 electrons Section 1-2 Semiconductors, Conductors, and Insulators 3. ‘The materials represented in Figure 1-40 in the textbook are (@) insulator (®) semiconductor (©) conductor 4. Anatom with four valence electrons is a semiconductor. Section 1-3 Covalent Bonds 5. Inasilicon exystal, each atom forms four covalent bonds. Section 1-4 Conduction in Semiconductors 6 When heat is added to silicon, more fee electrons and holes are produced. 7. Current is produced in silicon at the conduetion band and the valenee band. Section 1-5 N-Type and P-Type Semiconductors 8 Doping is the carefully controlled addition of trivalent or pentavalent atoms to pure (intrinsic) semiconductor material for the purpose of increasing the number of majority carriers (iree electrons or holes). 9, Antimony is a pentavalent (donor) material used for doping to increase fiee electrons, Boron isa trivalent (acceptor) material used for doping to increase the holes, Section 1-6 The Diode 10. The electric field across the pm junction of'a diode is created by donor atoms in the # region, losing free electrons to acceptor atoms in the p region. This creates positive ions in the n- region near the junction and negative ions in the p region near the junction. A field is then established between the ions. 11, The barrier potential ofa diode represents an energy gradient that must be overcome by conduction electrons and produces a voltage drop, not a source of energy.Chapter 1 EES Section 1-7 Biasing the Diode 12. To forward-bias a diode, the positive terminal of a voltage source must be connected to the Prregion. 13, Aseries resistor is needed to limit the current through a forward-biased diode to a value which will not damage the diode because the diode itself has very littl resistance. Section 1-8 Voltage-Current Characteristic of a Diode 14, To generate the forward bias portion ofthe characteristic curve, connect a voltage souree ‘across the diode for forward bias , and place an ammeter in series with the diode and a ‘voltmeter across the diode. Slowly inerease the voltage from zero and plot the forward voltage versus the current 15, A temperature increase would cause the barrier potential to decrease from 0.7 V to 0.6 Y. Section 1-9 Diode Models 16. (a) The diode is reverse-biased. (b)_ The diode is forward-bi (©) The diode is forward-biased, (@) The diode is forward- 50MO ” Jov-swe-sv Section 1-10 Testing a Diode 18, (2) Since Fp = 25 V=0.5¥,, the diode is open. (b) The diode is forward-biased but since Vp = 15 V = Vy the diode is open. (©) The diode is reverse-biased but since Va ~2.5 V ~ 0.5Vs, the diode is shorted. (d) The diode is reverse-biased and Vx =0 V. The diode is operating properly. 19. Vy= Ve 425 V Py = V5, 0.7 V =25 V0.7 V=424.3 V Vo= Veg +0.7V=8V+0.7 V=48.7 V Py = Ven =48.0VChapter 1 ee EWB/Multisim Troubleshooting Problems ‘The solutions showing instrument connections for problems 20 through 28 are available in the Solutions folder for Chapter 1 on the CD-ROM provided with the textbook. ‘The solutions may be ‘accessed using the password EDSFLOYD. The faults in the circuit files may be accessed using the password book (all lowercase). 20. Diode shorted 21. Diode open 22, Diode open 23. Diode shorted 24. No fault 28. Diode shorted 26. Diode leaky 27. Diode open 28. Diode shortedChapter 2 Diode Applications Section 2-1 Half-Wave Rectifiers 1. See Figure 2-1. 4av. o ® Figure 2-1 -07V_5Vv-07V 2 @) @ wa 6 =02V _SOV-07V _493V igo uy 33k0 3. AV ,, = (02)1SV =23 V rms 4. Vgg=2¥iy,= (0515 V =57.5.V ems Vsccy = 1:414(57.5 V)= 81.3 V 813V _a59y = IVF _ @o.6 vy? "2200 7, Vania) _ 5.9) od ee 5) Fag = 2a00V) (>) Kang = =63.7V 7 Pag = 2 +10 =202Y) + to Vv=164 @ Vag = 22 -15v = 24) is v-105vChapter 2 ee 9. 10. uw (2) Center-tapped full-wave rectifier &) al (0.25)(1.414)110 V = 38.9 V @) “He 82 aay @ erga! Vp=194V-O.7V=18.9V Figure 2-2 -07V () p= 2 = 81 = sama, Re 10K (® PIV=194V+18.7V=381V Vang = = 55 V for each half re AV ng 155 Y)=173.V See Figure 2-3. Figure 2-3 piv =v, = Zowiaet . 60V) _aggy 2 2 PIV = View) = 1414(20 V) = 283 V See Figure 2-4. -294v- Figure 2-4Chapter 2 Section 2-3 Power Supply Filters and Regulators 12. Fuge) = (1.414)(0.5 V)= 707 mV pp _ToTmV “a5 = 0.00943 ¥, ‘ni 30V PRC (120H2)(6002)30 1) 13. Fam = .33 V pp \ 1 . tg (-aaz}onl (eorex o0 SO uz) Y “88 Y ¥, 14. %r={ “2 hoo (25¢ oo -222% Voc 25.8V 15. Muggy = (0.01)(18 V)= 108 mV 1} Vey = (4 nny 1 y, sink ov weary IRC (120H2}(10KQVUO UF) (120 H2)-SkHA8O MY), (amoimam) V = 586 uk 16. ~ai om (amen a467 CO 2RR,c (240Hz(10KQ)(10 pF) Bi 667 = te) - SOT 2g eo a6Tv 0.143 IT. Fodgng = (1.414)(36 V) = 50.9'V Forecy = Voice) 14V = $0.9 V-14.V=49.5V 1 1 Neglecting Rune Vio =| —— Vytemy =| —=————--___—_ a9. v = 1.28 sone me (eh * mamta 1Chapter 2 ES 18. Vig) = 1.41436 V) = 50.9.V See Figure 2-5. a a — a a Yoo ° Figure 2-5 Jom «(8812 a an 19. Load regulation 20. Ver = Vu. — (0.005) Fyu, = 12 V - (0.005)12 V=11.94.V Section 2-4 Diode Limiting and Clamping Cireuits 21. See Figure 2-6. ary. wov~ Figure 2-6 22. Apply Kirchhoff’s law at the peak of the positive half cycle: (b) 25 V= Fat Fn + 0.7 V Vue = Vat 0.7V = 12.15 V+0.7V=1285V See Figure 2-7(a). a 3 Vou = Va + 0.7 V=5.65 V+0.7V=6.35V See Figure 2-7(b). 5.65 V2. See Figure 2-7(¢). See Figure 2-8, ay @ Cy) @ Figure 2-6 @ @ @ TT NSN @ © Figure2-8 10Chapter 2 eee 24, See Figure 2-9, “WT ° asy--> @ iave--, © Figure 2-9 25. See Figure 2-10, ory, o7v Sf Si Oe Fv -09v ® © Figure 2-10 26, See Figure 2-11. pay . VU ¥ -nv--- ® aot YF © Figure 2-11 27. (a) Assine wave with a positive peak at 0.7 V, a negative peak at -7.3 V, and a de value of -33V. (b) A sine wave with a positive peak at 29.3 V, a negative peak at -0.7 V, and a de value of +143 V. (©) A square wave varying from +0.7 V to ~15.3 V with a de value of ~7.3 V. (@) A square wave varying from +1.3 V to -0.7 V with a de value of +0.3 V. 28. (a) A sine wave varying from -0.7 V to 47.3 V with 2 de value of $3.3 V. (b) A sine wave varying from -29.3 V to +7.3 V with a de value of +14.3 V. (c) A square wave varying from -0.7 V to +15.3 V with a de value of +7.3 V. (@ A square wave varying from -1.3 V to +0.7 V with a de value of -0.3 V. ulChapter 4 eee y-0.7V_ 23V ® to Took ~ 100K °°“ Irce{aus) = 300 Je~ 300(23 UA) = 6.90 mA fouy= 22Y =21,4mA 3609 ‘The transistor is not saturated. 40. Sam = From L Tem = Mecca) 41, For the circuits of textbook Figure 4-58: 8V-07V_73V = =107 = aK "oka 1 hig = 150 T= 150(107HA) = 16,1 mA 5 V— (16.1 mA)(680 &) = 15 V- 10.95 V~4.05. V Fow=4.05 V-0.7V=335V Po (3.35 V(16.1 mA) = 53.9 mW AL 40°C, Pogaa = 360 mW ~ (40°C — 25°C\(2.06 mW/°C) = 329 mW No parameter is execeded. _SV-07V_ 43V Ob a “aren PHA Ire = 300 Te= 300(915 4A) = 274 mA. 33V-03V 3.8 mA cen 4702. ‘The transistor is in hard saturation. Assuming Vea) =0.3 V, Po= (03 V)(73.8 mA) = 22.1 mW No parameter is exceeded. Advanced Problems a. Prom poe Pre ~ Poostoc = ape Proc = ix(1 + foc) __ boc ~ G+ Boe) oe 32Chapter 4 4B. Io= 150(500 A) =75 mA. Vee= 15 V —(180 975 mA) - 0.7 V=0.8 V Since Veria= 03 V @ Fe 50 mA, the transistor comes out of saturation, although ‘marginally. From the data sheet, Pociin = 15. (for Io= 100 mA) fay SOMA — 10mA Rea = 3. % ean = es Use the standard value of 240 0 for Ry. 230A {ff anes To avoid saturation, the load resistance cannot exceed about BVA W330 150mmA 1 See Figure 42. = Figure 42 0 mA for fe= 150 mA, ey Repag 22 EV OV. cay TomA ~10mA fe Use 910.2. The load cannot exceed 53.3 0. Sce Figure 43, = 30h Figure 4-3, Reqs) Ad = 518 2) = 400 8 (Use 430 0) dae jo FESY cae, 4300 hy she Assuming Jr: = 100, tha tbo jpn 183A 6s a ex — Rugg AY OY = 20,3 usr (Use 18 KO) 163 A I See Figure 4-4 Figure 44 33Chapter 4 SN eee EWB/Multisim Troubleshooting Problems ‘The solutions showing instrument connections for Problems 47 through S4 are available in the Solutions folder for Chapter 4 on the CD-ROM provided with the textbook. The solutions may be accessed using the password EDSFLOYD. The faults in the circuit files may be accessed using the password book (all lowercase). 47. Ru shorted 48. Reopen 49. Collector-emitter shorted 50, Collector-emitter open 51. Ry leaky 52. Collector-emitter shorted 53. Rs open 54. Reopen a4Chapter 5 Transistor Bias Circuits Section 5-1 The DC Operating Point 1. The transistor is biased t00 close to saturation. 2. Je= Boole = 75(150 A) = 11.3 mA Veo ~IeRe = 18 V ~(11.3 mA)(L.0 kQ)= 18 V1.3 V= 6.75 V V, Jeg = 11.3 mA IgV ae ASV Lama ce R LOKD Ves) = 18 V 5. Horizontal intercept (cutofl}: Veu=Veo=20V Vertical intercept (saturation); Yoo, 20V 4 Re 10kQ Lean = Vou = faRe + 0.7 ¥ = QO wA)(1.0 M2) + 0.7 V=20.7-V Te= Book = 50(20 uA) = 1 mA Ves Veo ~deRe™ 20 V ~ (1 mAY10 k) = 10 V See Figure 5-1, UeRe Vee= Veo = 186 kQ Poyeiny = Veule = (4 VS mA) = 20 mW 35Chapter 5 ————— Von ~ Vr 1SV-0.7V 8. ye oe 2 TET = 80 ua Ry 10K “u diggs a Nope aye Re 3908 Te = Bocls = 75(80 wA) = 6 mA. ‘The transistor is biased in the linear region because 0< fe< leva Section 5-2 Voltage-Divider Bias % 47k 6800 -Ne sv m teva RotRe 21K Visa = LereaoRe = (6.88 MAXG80 Q) = 4.68 V Vg = Vesan + 0.7 V = 4.68 V+0,7 V=5238V — hl eck _|isy =s38v B+ Ry | Packs (R, | FocRe)(1S V)= (5.38 V) (B+ Re | Books) (| ocR.)OS V)— (| HpeR.)(538 V)= R158 V) (R, | BocRe)(15 V~5.38 V) = (22 KO\5.38 V) Ry | Bocke = FAME) 123 un = 6.88mA, Me Vax Joo-(2AEJisv “tas ke =809 pA Voe™ Voo~ foRe ~ Ve = 15 V ~(809 WAYS kQ2 + 680.2) = 13.2 V 36Chapter 5 rye (gee res shook) py -sorv R+ Rel Bocke ATS KY TIO}COKD) Vq=Vy-0.7 V=197V-0.7V=1.27V teetgm Ye IN ona ROKR Vo= Veo IeRe=9 V ~(1.27 mA)(2.2 kA) = 6.21 ¥ ua 13. Sce Figure 5-2. ) ana 2210 Figure s-2 = 14, (2) Rivipase) = BocRe = 50(560 2) = 28 kA (peel a bay-(S2B a2 --149v 33K +5.6KQ | 28kKQ 37.7kQ. ©) Rovoaie = 50(1120 Q) = 56 KO _{__5.6ka] s.oKe Jory -(ae ® [aa sexn [sen i ‘s aay) --46v 38.1k0 15. (@) Veg= Vet 0.7 V=-149V 40.7 V=-0.79V ¥; ov deg le= 1.4 mA ve R, 5609 Veg = Veo~IeRte=~12 V ~ (-1.41 mA)(1.8 k)=-9.46 V 8.67 V Vera = Vea ~ Vig = -9.46 V - (0.79 ©) Popa = Foa¥erq™ (“141 mAY-8.67 V) Section 5-3 Other Bias Methods 16. Van =Veci Ve=0V O7V _12V-07V_U3V I BNTOTY =e =si4, Ka 2K AA Te= Pocky =90(514 uA) = 46.3 mA Vee= Veo —eRe= 12 V ~ (46.3 mA)(100 2)=7.37 1 fey Vesa 80(S14 WA) = 92.5 mA 2 V — (92.5 mA)(100 0) = 2.75 V 18. Jo changes in the circuit with a common Voc and Vex supply because a change in Voc causes Jq 0 change which, in turn, changes . 3720. a. 9V-02V jn V 2553 15ke ua Tig = DN wma R. 1000 For foe = 50: Te~ rola = 50(553 A) ~ 27.7 mA Vou = Veo ~feRe= 9 V (27.67 mA\100 Q) = 6.23 V For floc = 125: Te= Bocls = 125(553 A) = 69.2 mA Vou= Vee ~ felte= 9 V (69.2 mA)(100 2) 2.08 V Since Je < ley for the range of Boo, the circuit remains biased in the linear region. mA, 3 2 Vv — 15kQ Te= Pcl = 55(853 A) = 304 mA = 553 uA Veu= Veo eRe =9 V ~ (30.4 mA)(100 2) = 5.96 V At 70°C: Poo = 110+ 110(0.75) = 193 553 uA Pocls = 193(553 A) = 107 mA 1> Tegaiy therefore the transistor is in saturation at 70° ~ Igo = 90 mA ~ 30.4 mA = 59.6 mA Vea = Veven~ Vesusy™ 5.96 V -0V = 5.96 V v, V-07V=-0.7V Vex Vo ~ Von Vy-Veg , -O.7V-(5V)__ 43V_ yap +Ry/ Boo 22KO+22KON100- 2.4270 1.78mA 100 7 RHA Vq= (17.8 WA)22 KO) =-391 mV 391 mV -0.7V=-1.10V Veo = foRe= 5 V ~ (1.78 mA)(1.0 kQ) = 3.22 V Assume that at saturation, My 1.10 Vand Forex 38Chapter 10 _—————— Section 10-5 Total Amplifier Frequency Response B. fax 136 fua= 8 ket 24, From Problems 14 and 19. Sra= 432. MEz and f= 6.89 KHz ‘BI ~ fy fu™ 4.32 MU ~ 6.89 Kile = 4.313 MHz 25. fr= (BW Avni py= —fr_ _ 200MEz Acoiay 38 Therefore, f., = BW = 5.26 MHz = 5.26 MHz, 26. 6 dBloctave rollo®: At 2faz dy" 50dB~6 dB = 44 dB Atdfez Ay = 50 dB 12 dB =38 dB 20 dB/decade rolloft AL 10/2 Ay =50 dB ~20 dB =30 dB Section 10-6 Frequency Response of Multistage Amplifiers 27. Dominant f= 230 Hz Dominant 1, = 1.2 Mz 28. BW=1.2MHz.~ 230 Hz= 1.2 MHz 29, 30. 1252 _125Ha 3. = ee = 194 He, (> Ta 068 “2.5 MHz 5 MHz ~ 194 Hz = 2.5 MHz. 93Chapter 10 Section 10-7 Frequency Response Measurement 32, 3. we _ 035 Sa 0.35 _ 035 7, 20ns Increase the frequency until the output voltage drops to 3.54 V (3 dB below the midrange output voltage). This isthe upper critical frequency. div 5 psidiv~ 15 ps 6 div 0.1 ms/div = 600 ps 035035 fa- ty” 600 ps 0.35 _ 0.35 Sou ——— Sys BW = 23.3 kHz, S83 Hz = 22.7 kHz = 583 He, 3.3 KHZ System Application Problems 35. 113kQ, [p= 2,13 mA, 7! = 11.70 Ri= 22k2| 100 kQ| (112.2)(100) = 6.9 kA (both stages) First stage: 1 Sam FET =4.7kQ +69 kQ= 11.6kQ L Pe CLAN) Rayyasr= 22002) (112.0-+ 2202 100 K22/100) = 125. L y= a Sesoown = saps ayi00 GE)" Second stage: Seam) ™ 13.7 Haz (same a fexonn Of first stage) Rowe = 4.7 KQ + 10 KO = 14,7 kD 1 Leon = PGA TRON A = 10.8 Hz Raypere = 220 2 (112.0 + 22 kO2|| 100k] 4.7 k2/ 100) = 88.8 2 1 2n(88.8:0)(100 uF) Suan of first stage is the dominant lower critical frequency. = 13.7 Seatypass = 7.9 HzChapter 10 38. Changing to 1 éF coupling eapacitors does not significantly affect the overall bandwidih ‘because the upper critical frequency is much greater than the dominant lower critical frequency. Increasing the load resistance on the output ofthe second stage bas no effect on the dominant lower critical frequency because the critical frequency of the output circuit will decrease and the critical frequency of the first stage input eireuit will remain dominant. Vo~ (82 av =1.38 V, Yo=0.68 V 115kA = 21S mA, f= 11.70 Riy = 22kG2|] 100k (112 Q)(100) = 6.9 kA (both stages) First stage: 1 2a(6I KAO UF) .7KR+ 6.9 KQ= 1G KA . 1 © FaQ LOK UO WE) Repay = 220.2) (12.0 +22 KAI] 10002100) = 125 2 1 2r(125 QKLO0 AF) Second stage: 1.37 Ha (same a8 feu Of first stage) LTKOQ+ 10 KO = 14.7 Feage 1 8 Qa TKON(O pF) Reypen = 220 Q| (112.0 + 22 kA 100A | 4.7 K2/100) = 88.8 Q 1 Fesiny = 31 Aa Row Foon) =1.37 Hz 2.7 He Fespas) = =— 1 ___ijom Fiivon)= Fes BOLO, 1B) First stage: Re= 47KQ| 100KQ| 22kA|] 100)(100. 2411.7 2) = 2.8 ka 2840 _ Mi" Fg 725 Choy = (5+ 1 p= 112 pF Chen = 112 pF +8 pF = 120 pF 2541 waiter) = | —>— |4 pF = 4.16 pF Saree ( © ) PF = 4.169 1 men! 2n(6.9 kQ)(120 pF) 1 TrARKNY16 LF) Souny= 92 kHz, fron 3.7 Mie 95Chapter 10 SO Second stage: Re= 4.762] 10K =3.2KO Ag= 32K 1129 Chute) = (28.6 + 1)4 pF = 119 pF Chin) 119 pE + 8 pF = 127 pE 28.641 oe sor =4.14 pF ae m 22.8 KQ)(27 PE) 1 Jose FBBKONGTE PE) 03s 17.9 He 035 9" Tan = 28.6 sussi[ Seotey= 448 KH = 12.0 Mz, y= =19.5 ms Data Sheet Problems 39. Cio = (25 + 1)4 pF +8 pF = 112 pF 40, Al. Ce” Cu “13 PE Co = Cis — Cra = 5 pF - 1.3 pF =3.7 pF Ca- Gra = 5 pF - 13 pE=3.7 pF Advanced Problems 42, From Problem 12: r/ =7.81 Qand fy=3.2mA 20 V ~ (3.2 mAY2.2kN) = 13 V de “The maximum peak output signal can be approximately 6 V. ‘The maximum allowable gain for the two stages is 6v Aires) = = APA ‘nom TaraCiOmv) For stage 1 Re= 2.2A|| 33k] 4.7 kA] (150)(7.819) = 645 2 Aya SBD 926 812 96Chapter 10 eee For stage 2: Re= 22KQY 5.6KQ = 158kK2 _ 1S8KO _ Mam Fagg 7202 Aww = (82.6(202) = 16,685 ‘The amplifier will not operate linearly with a 10 mV rms input signal. ‘The gains of both stages can be reduced or the gain of the second stage only can be reduced, (One approach is leave the gain of the first stage as is and bypass a portion of the emitter resistance in the second stage to achieve a gain of 424/82.6 = 5.13. 158kQ- 40.10 x3 SS Replace the 560 {2 emitter resistor in the second stage with an unbypassed 300 Q resistor and a bypassed 260 9 resistor (closest standard value is 270 Q). 4B. From Problems 17, 18, and 21 Cr Cy | Cunny =2059F 2.6541 2.65 Cantey 4 Jas81 iF Stage | Pigg ee PO)” TAR, C, 2x(9.32MOY(0.005 ul) 7 1 © Be @S2MOV0.005 pF) 1 fain” SeemyaaepR 29 MEA 1 = =f {aio ~ (SOHO SPE SSTBE) Stage 2: 1 1 hei" => * RO BaR,C, 2a(OSEMOVO.005 pF) — 1 ___= 301 tz BOB KN}(O.005 fF wn 2 So” FeS6VONQO.G PEs SSIpR) 10S MMe 1 —— tt __ nist 2n(5602]] 10KQ)S.5 pF) =3.34He fosorn = 3.34 Hz since Riya) >> 560.Q 5 MHz Féouy= Seats = .5 MHz Overall: Sogoiy = 1.01 KE ard fy = 10.5 MEEz ‘BW = 10.5 MHz 97Chapter 10 ee 44, Ry = 22 AI (100)20 O) = 13 KA 1BkKa Tage I2V = 1.38, Feyy= 0.684 V mt () "i y= 25AN A 14nd, of = 11.70 3200 Ry = 47 KAY 33K] 22kO| (100)(100.) = 2.57 KO — 257K _ 95 "2a Riaay = 22kQ| (100)(1010 Q) = 18k Few (FB)ev = 4.42, Vay” 3.54 V (Sik as4V = =351mA, 1 =7.130 we" 701K Reg) = 3KO| 10kO =2.31 KO by = PSD 94 maximum 107138 Aig 232 2.27 minienaen ~ rkO+ 7.130 Agus = (23)(24) = 554 maximum Avon = 23)2.27) = $2.3 minimum This is a bit high, so adjust Req) to 3 KO, then _ 3A 22kA| 33k) 101k me 1120 14 (21.3)(24) = $13 maximo Avioo = Q13)2.27) = 48.5 minimum ‘Thus, A, is within 3% of the desired specifications. Frequency response for stage 1 Ra= 22kOQ|100kQ| 32kQ = 11.5 KO =) ase fa” FeSO Renin = 220.2 | (1002 411.724 (22KE2| 100100) = 125.2 1 (125 Q\100 pF) Rye =3KO+ (33KQ| 22 KOI) 100)(107)) = 8.91 KO 1 Fa MKD gi =12.7 He Fyre) Fesiut) = 1.79 He 98Chapter 10 as Frequency response for stage 2: aay) = 1.79 Bi (same 28 feu) for stoge 1) Raue= 3 KOQ+ 1OKS™ 13 KD Sawa = a5 7 2r(3KQVIO LE) ‘This means that Cia) is the frequency limiting capacitance. Renae 9102] (1002+7 2+ (22kN|| 33 kA|] 3kQ)/ 100) = 115.2 For fl, = VkHe _ 1 2a (11S OMI KHZ) 1S af is the closest standard value and gives fie —— tie) F(115 QYI.S WF) ‘This value can be moved closer to 1 kHz by using additional parallel bypass capacitors in stage 2 to fine-tune the response. EWB/Multisim Troubleshooting Problems 22 Ha Com = 1.38 at = 922 Ha, ‘The solutions showing instrument connections for Problems 45 through 48 are available in the Solutions folder for Chapter 10 on the CD-ROM provided with the textbook. ‘The solutions may be accessed using the password EDSFLOYD. The faults in the circuit files may be accessed using the password book (all lowercase), 45. Reopen 46. Output capacitor open 47. Reopen 48. Drain-source shortedChapter 11 Thyristors and Other Devices Section 11-1 The Basic 4-Layer Device 1 Vy=Vae—Vewaiy=0.7V+0.2V=09V -V, =25V-09V: 2 @R (®) From 15 V to 50 V for an increase of 35 V. Section 11-2 The Silicon-Controlled Rectifier (SCR) 3. See Section 11-2 in the textbook. 4. Neglecting the SCR voltage drop, Rowe SOY. 3 40 10ma Section 11-3 SCR Applications ‘Add a transistor to provide inversion of the negative halfeycle in order to obtain @ positive gate trigger, 6 Dyand Dyare full-wave rectifier diodes. 7 See Figure 11-1. Figure 11-1Chapter 11 ae Section 11-4 The Diac and Triac 8. Figg ™ LALAVigem) = L44Q5 Y= 35.4 V 355 y= Vino S.A = Toue Current at breakover = 2° = 20 mA LoKa See Figure 11-2 Figure 11-2 Isv 9 b= Y =319ma a7k0 See Figure 11-3 219m tna Pm 319m Figure 11-3 Section 11-5 The Silicon-Controlted Switch (SCS) 10, Sce Section 11-5 in the text. 11. Anode, cathode, anode gate, and cathode gate 101Chapter 11 ES Section 11-6 The Unijunction Transistor (UJT) me ae al th ttn 13, p= Van + Vn =0.385(15 V)+0.7 V= 6.48 V 14, 12V-08V 2 _12V-10V 1SmA ST BA 147 0< Ry <200kQ Section 11-7 The Programmable UJT (PUT) \ R 10K 18. y=([—2_y, +07v- 20v +07 V=9.70V @ (= +E) (Sia) x ATK 6) = (Sy, 40.7V=-[ lov +o.7v=sav @ (as) (Ga) 16. (a) From Problem 15(a), Yq =9.79 V at tum on. = 22N 908 mA at tum on 4700 _ lov 2 4702 See Figure 11-4 213ma 208ma. ° Figure 11-4 102Chapter 11 (b) From Problem 15(6), Fa = 5.2 V at tum on, pu ba® 3300 5.8mA at tun on ¥4~3.7 V at tum on, See Figure 11-6, Agproes ¥-——b > °. Figure 11-6 103Chapter 11 So Section 11-8 The Phototransistor 18, o= Bool, = (200)(100 A) = 20 ma 19. 20. (50 Imv/m")(1 sA/Irnvm*) = 50 A. Pocifiocaba ~ (10015050 uA) = 750 mA. Section 11-9 The Light-Activated SCR (LASCR) 21, When the switch is closed, the battery V2 causes illumination of the lamp. ‘The light energy causes the LASCR to conduct and thus energize the relay. When the relay is energized, the contacts close and 11 V ac are applied to the motor. 22, See Figure 11-7. i a Section 11-10 Optical Couplers 23. fon = (0.30)(100 mA) = 30 mA 24. System Application Problems 28, The motor runs fastest at 0 V for the motor speed control circuit, 6. If the rheostat resistance decreases, the SCR tums on eartier in the ac cycle. 21. As the PUT gate voltage increases in the circuit, the PUT triggers on later in the ac cycle causing the SCR to fire later in the cycle, conduct for a shorter time, and decrease the power ‘to the motor. 104Chapter 11 Advanced Problems 28. Dy: 15 V zener (IN4744) Ri: 1009,1W Ry: 100.0, 1 Qi: Any SCR with a 1 A minimum rating (1.5 A would be better) Ry 1500, 1W 29, See Figure 11-8 ag actopa | F_|ocses inerss Baw tira =154 Figure 11-8 ¥,= Vay + Voe = (0.7S\12 V) + 0.7 V=9.7V Ae 10mA and p= 20 HA ge RYO sree 20 uA a> BYAIV or ika T0mA Select R, = 51 kQ as an intermediate value, During the charging eye Vet) = Ve Be Vago ne 9.7V=12V—02V-1V)e*/FE -f5-u(2) Re Uv 23V iv 4=- new, ) = 156R,C=79.8 x 10C 105Chapter 11 es During the discharging cycle (assuming R2 >> Rai WO = Ve- Vy -Vyje? LV=0V-(0V-93Vye #2 h ( v. ) (iv cm( ay) “22 100 KO, so fy = 223 « 10°C. 5 kHz, T= 400 ps Tat = 79.8 » 10°C +223 x 10°C: = 0s = 9.0013 pa 303x10 See Figure 11-9. Figure 11-9 EWB/Multisim Troubleshooting Problems ‘The solutions showing instrament connections for Problems 31 through 33 are available in the Solutions folder for Chapter 11 on the CD-ROM provided with the textbook. ‘The solutions may be accessed using the password EDSFLOYD. ‘The faults in the circuit files may be accessed using the password book (all lowercase). 31. Shockley diode shorted (EWB only) 32. Gate-cathode open 33. Ry shorted 106Chapter 12 SSS Section 12-9 Troubleshooting dt. 42. 43. (a) Faulty op-amp or open & (b) R; open, forcing open-loop operation (® Circuit becomes a voltage-follower and the output replicates the input. (©) Output will saturate. (©) No ceffect on the ac; may add or subtract a small de voltage to the output. (@) The voltage gain will change from 10 0 0.1 ‘The gain becomes a fixed -100 with no effect as the potentiometer is adjusted System Application Problems 44, The push-pull stage will operate nonlinearly if D, or D; is shorted, Q, or O: is faulty, the op-amp stage has excessive gain, or if Re is open of shorted. 48. If a2.2 MO resistor is used for R,, the gain of the op amp will be ten times too high, probably causing a clipped output waveform. 46. IED, opens, the emitter current of Q, is diverted to the base of Q, producing saturation. Qs will also saturate, The result isa signal voltage of @ V on the output. Data Sheet Problems 47. From the data sheet of textbook Figure 12-67. = 408 _ 0099 47kO+4700 Au~ 200,000 (typical) Zy=2.0MQ (typical) Zaa= 25.0 (typical) Zauan= (1 +0.0099)(200,000)(2 M2) = (1 + 1980}2 MO-=3.96 GA 48. From the data sheet in Figure 12-67 50V _ 50,000 49, = 50 Vimy = 220 _ 50,0000" 50,000 a imv~ 1 on 50, Slew rate=0.5 Vipes AV=8V~(-8V)=16V 16V Osis 1sChapter 12 SS Advanced Problems 51. Using available standard values of R= 150 kO and R/= 1.0 kQ, 150k _ Aa 1+ =151 10Ka 4 = 662 10 sien 0 Zags) = (1 + (6.62 x 10(50,000))300 kA = 99.6 MO ‘The compensating resistor is, R= R, | Rp =150kO] 1.0K = 993.0 See Figure 12-3. sikh 20 Figure 12-3 52, See Figure 12-4, 2% tolerance resistors are used to achieve a 5% gain tolerance. 58. From textbook Figure 12-68: a f-= WO KHz at 4, = 40 dB = 100 Bho In this cireuit & 4,= 1+ SEE - 100.1 = 100 3a ma 330 ‘The compensating resistor is R= 33kQ2| 3330 =3300 See Figure 12-5. Figure 12-5 116Chapter 12 ——— 54. From textbook Figure 12-69 For a+10 V output swing minimum, the load must be 600 © for a::10 V and ~ 620 9 for -10 V. So, the minimum load is 620 Q. 58. Forthe amplifier, ‘The compensating resistor is, R= 100kQ| 2kQ = 1.96 k= 2D See Figure 12-6. Figure 12-6 From textbook Figure 12-68 the maximum 741 closed loop gain with B= 5 kHz is approximately 60 dB — (20 dB)log(5 kHz)/1 kHz) = 60 dB - (20 dBX0.7) = 46 dB Avan) =20 log 4, 4 As vo) -1e* (8) 200 EWB/Multisim Troubleshooting Problems ‘The solutions showing instrument connections for Problems 57 through 72 are available in the Solutions folder for Chapter 12 on the CD-ROM provided with the textbook. The sohutions may be ‘accessed using the password EDSFLOYD. The faults in the circuit files may be accessed using the password book (all lowercase). 57. Ryopen 58. Riopen 59. Ryleaky 60. Ry shorted 61. Ryshorted 62. Op-amp input to output open. 7Chapter 12 63. 64. 67. 68. 69. 70. cm Ryleaky Ry leaky Ryshorted Reopen Ryopen Rylcaky Ryopen Ryshorted Ryopen Rylecky 8Chapter 13 Basic Op-Amp Applications Section 13-1 Comparators Te Praag) = AaiVn = (80,000)(0.15 mVX1.414)= 16.9. V Since 12 Vis the peak limit, the op-amp saturates. Vaugg = 24 Y with distortion due to elipping. 2. (a) Maximum negative (b) Maximum positive (©) Maximum negative \ 18kQ’ i “0y)=(8!2 oy -277V 3. i 10¥) (:2}0 an Fin ( a \ wv) (842 )-10y) =v R+R, 65k 4 Vre— Vire = 2.17 V (2.77 V) = 554V 5. See Figure 13-1, Figure 13-1 19Chapter 13 R; 18k psi ae (82) 1y -a98 ‘ ( _ Yan (B8)ny ~sa8v Fig =-388V Vays = Vorw — Virw = 3.88 V = (-3.88 V) = 7.76 V ror (gi nia aay Vays = Vor ~ Vie = 3.43 V -(-3.43 V) = 6.86 V 1 ‘When the zener is forward-biased: ra (ltt . (b) Increase Rs or decrease Ri. Section 15-5 Active Band-Pass Filters 18. 19. (a) Cascaded high-passlow-pass filters (b) Multiple feedback (©) State variable (@) Ist stage: fa shea 3392 DaRC ~ Br(L.0 (0.047 LF) 2nd stage: fa i E = 7.23 kHz 2aRC ~ 2x(1.0\(0.022 iF) Som \FoSex ={G39KH2\7-23KH2) = 4.95 kt BW=7.23 kHz — 3.39 Hz = 3.84 kB RR, 1 1 aTKOT EKO ICY RRR, 2e(0.022 pF) \ (7 KAM. SKOY(USORA) Wf= O= AfeCRy= x(449 H12)(0.022 uF (150 KO) = 4.66 py Jo 44982 O 466 = 96.4 He (©) For each integrator: 1 1 = 159 kHz f 2nRC 2m (10 K22)(0.001 zF) So kes = 15.9 kHz Re) 1/s00K a (S+i}-2(om 1 (86+1)=19 _ fa _15.9'ta = 838 Ha o 137Chapter 15 a 20. O- (& ) Select Re = 102. RL RR, Oo SR 3R, BRQ=Rs+Rs Re 3RQ— R= 301.0 KS)(50) ~ 10 k= 150 kA 10KQ= 140 KO 1 2re(12 KQ)(0.01 2) 1.33KElz = 1.33 kHz = 26.6 Hz Section 15-6 Active Band-Stop Filters 21. See Figure 15-4. Figure 15-4 2. 1 1 2afyC 2a(120Hz)(0.01 ak) Change R in the integrators from 12 k® to 133 k2. R= 33K EWB/Multisim Troubleshooting Problems ‘The solutions showing instrument connections for Problems 23 through 31 are available in the Solutions folder for Chapter 15 on the CD-ROM provided with the textbook, The solutions may be accessed using the password EDSFLOYD. The faults in the circuit files may be accessed using the password book (all lowercase). 23. Ry shorted 24. Reopen 25, Cy shorted 26. Reopen 138Chapter 15 EES 27, 28, 29. 30. ai. ‘R> shorted Ry open Cyopen Ry open 139Chapter 16 Oscillators Section 16-1 The Oscillator 1. Anvoseillator requires no input other than the de supply voltage. 2 Amplifier and positive feedback cireuit Section 16-2 Feedback Oscillator Principles 3. Unity gain around the closed loop is required for sustained oscillation. 4g 4B 1 p= -o013 ys 4. Tocensure startup: 4g>1 since A, = 75, must be greater than 1/75 mn order to produce the condition AB>1. For example, if B = 1/50, 1 1 “ 2aRC In(62KON0.02 uk) = 1.28 kHz 7. Ry=2R 100k = 50K 8. When de power is first epplied, both zener diodes appear as opens because there is insufficient output voltage. This places Rin series with R;, thus increasing the closed-loop gain toa value greater than unity to assure that oscillation will begin. 9% Ry= (he IMR + 75, = GB — 198202 + 350.2) = 2.34 KO 40Chapter 17 ————— Section 17-5 AM Demodulation a. See Figure 17-4. 49SMle 485Kil2 47SMMle L480 kIMe 500 Kite 1520 ktte Figure 17-4 See Figure 17-5. See Figure 17-6. aaSibie 45S 47S EH Die Figure 17-5 Figure 17-6 Section 17-6 LF and Audio Amplifiers 24, 25, -1915 MHz, 2085 MHz, Foo ~ fu = 455 Kx ~ 8.5 KHz = 446.5 Kz fio * fn = 455 kHz + 8.5 kHe = 463.5 KH feo 455 KH, ‘The IF amplifier has « 450 kiz to 460 kHz passband, ‘The audio/power amplifiers have a 10 Hz.to 5 kHz bandpass. 148Chapter 17 ET —__ 26, Ci between pins | and 8 makes the gain 200, With R; set for minimum input, Vi, = 0 V. Faugein = Av inmiy = 200(0 V)=0'V With R set for maximum input, Viy~ 10 mV rms, Vesa) = AsV ings) = 200(10 mV) = 2 V rms Section 17-7 Frequency Modulation 27. The modulating input signal is applied to the control voltage terminal of the VCO. As the input signal amplitude varies, the output frequency of the VCO varies proportionately. 28 An FM signal differs from an AM signal in that the information is contained in frequency variations of the carrier rather than amplitude variations. 29. Varactor Section 17-8 The Phase-Locked Loop (PLL) 30. See Figure 17-7. Low Puss Filter Figure 17-7 31. (a) The VCO signal is locked onto the incoming signal and therefore its frequency is equal to the incoming frequency of 10 MHz. (0) Ve = cong, CSOmV AON) - G02 ‘ 159) (0.050)(0.966) = 48.3 mY 32. ay, +08V 33. K=1SkHHZ/V, A¥.=40.67V AYo= KAY. (1.5 KHZ/V)(+0.67 V) = 1005 Fz 149Chapter 17 SS 34. 35. For a PLL to acquire lock the following conditions are need (1) The difference frequency, fi — f must fal within the filter's bandwidth. (2) The maximum frequency deviation of the VCO frequency, A/a must be sufficient to permit f; to change to equal fi. ‘The free-running frequency: 12 12 7 > aR.c, 7 aa aKO\GIOpR) KH ‘The lock range: al foam 7 ‘The capture range: fer [2% = 2 3600% C; ~ad Ee) 1 =) Dr \\ 3600.22 ya ) 2a \\ 792 44.56 kHz ‘There are no 1B/Multisim Troubleshooting Problems in this chapter. 150Chapter 18 Voltage Regulators Section 18-1 Voltage Regulation 1 etn [22° un -(282 fo om ha ov Mout Ko (2mv/sv 2. Percent line regulation = | —%T “OUT 190% =| cro - (57a? (2559 n= (P87 10¥=290 i = (Vine ogy, =(10V=9.90¥ 3. Percent load regulation ( ‘Mr, 00° 900 can be expressed as = 0.004049%/mA. Section 18-2 Basic Series Regulators 0% =o00sr7¥ oor =1.01% See Figure 18-1, Input San neteene|_—_[ Ero senging ae face |] Siete Figure 18:1 R, 33kQ) Dou = (142 Wigae =[ 14 2.4V =103V stat ( * " ( im) Ry 5.6kQ ron (14+ 8 \igep =[14 552) 2 4: = 851V 1 Vee (15% rae (3B aav asi 151 From Problem 3, the percent load regulation is 1.01%, Fora full load current of 250 mA, this ouputChapter 18 SSS ‘Rs 2kQ: & vn (te 8 Yn For Ry= 4.7K: Ry _(y4 5:5K2)o gy - tan rn 0 )zay sary ‘The ourput voltage decreases by 3.27 V when Ry is changed from 2.2 kP2 10 4.7 k®. "hav =85V kA % 145542) ry -o87v 22k 10, 0.7 mA sums =280 Re Tea 250A P= Fay Ry = 250 mA}2.8 = 0.175 W, Use a 0.25 W. 280 n R= 2-140 2 O7V _OT¥ _ R, 149 500 mA Section 18-3 Basic Shunt Regulators 12. Q, conducts more when the load current increases, assuming that the output voltage attempts ‘to increase. When the output voltage tries to increase due to a change in load current, the attempted increase is sensed by Ry and R, and a proportional voltage is applied to the op- amp’s noninverting input. ‘The resulting difference voltage increases the op-amp output, driving Q, more and thus increasing its collector current. _ Py 1 Ale can 710 mA, R 1008 1 Vouy= [1+ 2 R. feo Ya Ry f= tom Ra Ah,= 152 mA - 18.2 mA = Als=—Af,= 3.0 mA 152Chapter 18 16, 17, f= 100 Hz, fog = 6 ms 1 4. =10ms 7 l0oH faq =T~ fog = 10ms ~ 6ms = 4 ms dims duty cycle = fet =04 My er Toms percent duty eyele = 014 x 100% = 40% 18. ‘The diode D, becomes forward-biased when Q, turns off. 19. The output voltage deereases. Section 18-5 Integrated Circuit Voltage Regulators 20, (a) 7806: +6V 10KE 1.0kQ. R) f 21. Vour=|14+—* Wrap + Fame =| 1+ =137V+05V=143V Jka + (60 nA}10 KO) 153Chapter 18 (1.25 VC. + 0) +0) = 1.25. Ruy 10k lt + _ ‘er + Dopa Pm | = 4 25 “i +a 3) +(50 sct0koy] = =(125V(2228)+05¥) 28.4V 23. The regulator current equals the current through Ry + Rs. Feg= four. 43V mee RR, UKO 3mA 24. Fy=18V, Vour=12V Inscgeas) =2 MA, Vase = 1.25 V Pryoe _ 1.25V 6250 Re Taso” 2A Neateetna last Vig@ 12V-1.25V=108V Yas 108V Re = SAO Treg 2mA For R, usc 620 Q and for Ro use cither 5600 2 or a 10 k2 potentiometer for precise adjustment to 12 V. Section 18-6 Applications of IC Voltage Regulators 2s, 26. Four = +12. V 4= BY 2 1200ma 109 Jea™ Ei. fra "124-05 A= O78 Pox TeV — Youn) = 0.7 (15 V— 12 V)=0.7 AG V) = 27. Ponts) = 0.7. O7N _07V Limtnin) = = 0.352 Retin TR Soe Figure 18-2. Figure 18-2 184Chapter 18 See Figure 18-3. Ve a0 1, Figure 18-3 =. _<160 300mA See Figure 18-4. Noa-V 708 vy Sania J te he Figure 18-4 is Veer = 1.25 V ‘The voltage divider must reduce the output voltage (12 V) down to the reference voltage (1.25 V). See Figure 18-38 in the text. raion Ry Veer RR Yor Ri = Ri(Veee/ Vout) + Ro( Veer! our) )_ Rul+ Yar /Your) ase Vour) Let Ri = 10 KS. yx WKAD=1.25 VZV) _ 5p (1.25 VA2V) 155Chapter 18 _——— EWB/Multisim Troubleshooting Problems ‘The solutions showing instrument connections for Problems 31 through 34 are available in the Solutions folder for Chapter 18 on the CD-ROM provided with the textbook. The solutions may be accessed using the password EDSFLOYD. ‘The faults in the circuit files may be accessed using the password Book (all lowercase). Bl. Re leaky 32. Zener diode open 33. Qycollector-to-emitter open 34. Rropen 156Results for System Applications a Recommendation 1, MOSFETs are not feasible replacements for the BJTs in this case. 2. Device variation in parameters make mass production impossible because circuit must be “tweaked” to match the gains, unlike BJTS. 3. Retain the BIT because 118 FET stages are required to match the gain of the two-stage BIT. Chapter 9 Analysis of the Power Amplifier Circuit “Input resistance: Voltage gain: 1360 (preamp and power amp combined) Transisior power ratings. Not sufficient without the heat sink. Troubleshooting Board I: ‘The signal appears at the bases but not atthe output. One of the darlington transistors is faulty, Board 2: There is no signal st either base of the darlington transistors, but the de voltages are ok, indicating that the bias transistor junctions are not faulty. Since there isa signal through C;, there is no obvious fault other than an ac short to ground at both bases, which in unlikely. So, the scope measurements are faulty. Perhaps the probe is not making contact with test points 2 and 4 or something has happened to the scope between step 4 and step 5. Chapter 10 Analysis of the Amplifier Circuit First stage: fy = 2.31 He, feqeay = 1.37 Wi, fxypee) = 12.7 Hz Sxrypang 8 dominant. First stage: fax) = 206 KHz, fajous = 13.7 MHz, fin i8 dominant. Second stage: fein) = 1.37 H2, foun = 1.08 H2, feta) = 17-9 Hz, foxspes i8 dominant, Second stage: fog) ~ 450 Kl, fagoup~ 12 MHZ, fen) '8 dominant. Overall lower critical frequency: 17.9 Hz Overall upper critical frequency’: 206 kHz Overall bandwidth: approximately 206 kHz Frequency Response on the Test Bench Lower critical frequency: Caloulated fa = 17.9 Hz, T= 55.9 ms; 35,9 ms/5.5 div = 10.2 ms/div. Closest setting is 10 ms/div. The actual frequency being measured is fa W(10 msidiv % 5.5 div) = 18.2 Hz Upper eritical frequency: Calculated f., = 206 kHx, T= 4.85 sus; 4.85 ja/5 div = 0.97 ss/div, Closest setting is 1 us/div. The actual frequency being measured is feu = L/(1gasidiv x 5 div) = 200 kHz 162Results for System Applications Chapter 11 Analysis of the Motor Speed-Control Circuit PUT gate voltage of 0 V, assuming forward voltage of 0 V, and the potentiometer set at 25 kQ: sea, 97 iN For the potentiometer set to 25 kA, V4 of the PUT is the same. With ¥o=0 V, 2 V, 4 V, 6 V, 8 V, and 10 V, the PUT conducts with V,~0.7 V, 2.7 V, 4.7 V, 6.7 V, 8.7 V, and 10.7 V respectively. Since V,=7.13 V maximum for Vq=8V and 10 V, the PUT never conducts and the SCR never fires and the load voltage is zero. The voltages across the load resistor are as follows: Issv~ Puree =0¥ ¥, Pur exe=2¥ ¥, Purgee=8¥ % PUTpHE=6V yi, 163Results for System Applications SSS eee Troubleshooting Board 1: The 50 k® resistor is open or the 1.2 k( resistor is shorted. Board 2: The SCR is open. Board 3: The SCR is shorted, Board 4: The PUT is shorted. Chapter 12 Analysis of the Audio Amplifier Circuit Midrange voltage gain: Ayuiy = 468 Lower eritical frequency: fu Bandwidth: BW = 15 kHz Maximum input: Vien Speaker power: Pouggs) = 3- Troubleshooting Board 1: The op-amp is faulty, improper connection at pins 3 or 6, or supply not on. Board 2: Rs is open or BE junction of Q1 is open. Board 3: 2, is open Chapter 13 Analysis of the ADC Circuit Summing amplifier gain: A,=—L Slope of integrator ramp +2 V input: MPnu/At=2 Ves ‘Slope of integrator ramp -8 V input: AVy/Mt=-8 V/s Dual:slope output: Positive ramp from 0 V to +3 V in 1 ya followed by negative ramp back to OV in 0.375 us, Sampling rate: 57) kHz Troubleshooting Board 1: 1C3 output stuck high. Board 2: R, or R; is open. Board 3: C; is shoried making IC2 a voltage follower. Chapter 14 The Circuits ; Ry, 330k R,_120Kn Tsolaton amplifier gain: Ayy = 241'= 38; da= Byt= 125 Agey = aan R 86KQ 2 Toone 712 deen 46 Fier bandbvidth: 106 Ha Filter gain: A, ~ 159 Post anpplifier gain: Ay) = ~100, Aya = ~150 Amplifier gain: Aqram)~ ~1750, Anas) = -2620 Voltage range at position pot wiper: Veiy=—59.7 mV, Ves =+59.7 mVResults for System Applications es Troubleshooting Board 1: Several faults can product no output including Rio open or [C3 output faulty or open, Board 2: R; or Ry open. Board 3: Rio open. Board 4: Ris or Ry open, Chapter 15 The Filter Circuit Sallen-Key critical frequencies: IC1 filter, 15.9 kFlz; IC2 filter, $3 kHz; 10S filter, 18.9 kHz; ICS filter, 15.9 KHz Multiple FB center frequency: 19 kitz Bandwidths: Approximately the same as the critical frequeney for each filter. Salien-Key voltage gains: 1C1 filter, 1.59; 1C2 filter, 1.59; 1C3 filer, 0.915; 1C4 Mer, 1.59; ICS filter 1.59 Sallen-key response: Ry/Rs= 0.589 (approximately Butterworth) Chapter 16 The Function Generator Circuit Oscillator frequencies: x1,: minimum f= 0.73 Hz, Maximum f= 8.84 Hz 7.3 Hz, Maximum f= 88.4 Hz 100,: minimum f= 73 Hz, Maximum f= 884 Hz 730 Hz, Maximum f= 8.84 Hz 3 kHz, Maximum f= 88.4 kHz 10k,: minirmurn f Output voltages: Sine wave: 25.4 V pp Square wave: 30 V pp Triangular wave: 12.6 V pp Troubleshooting Unit 1: Fault is in the C1 Wien-bridge oscillator block. IC1 output could be open or lead-lag feedback loop open. Unit 2: Output of IC2 is open. Ontput oF 1C3 open oF Ry or Rye open Unit 4: Negative feedback path of IC3 is open causing it to saturate, Chapter 17 The PC Board During board assemb; ‘stuffing error” has resulted in a resistor where diode D, should be. The Circuits 12 12 % Originate mode: Jawa. Zam ~ FES TANONSTE 07 kHz. Answer mode: R, = Ry || Ry = 6.22 5.6kQ = 2.94 k2 (Neglecting Q; sat R) 12 12 ——_*? ___ = 204 xt ERG WROD OOS LE Teosirity = 165Results for System Applications 07 KH, foro Max and min voltages are nearly equal to the supply voltage +6 V and -6 V. Same calculations 0s above: fongreo, 04 KH, When Qris off and Ris ~ 0 Qand Reset for maxirmum voltage: Fo =+6 V i 300Hz FSK data: 1090 He tone for 1.67 ms when pin 9 is low and 1270 Hz tone for 1.67 ms when pin 9 is high, m= Af= 1270 Hz - 1070 Hz = 2225 Hz ~ 2025 Ha =200 He 33ms, E = 1.67 ms 2 Troubleshooting © Nocircuit power, frequency components out of tolerance preventing lock, faulty PLL or op-amp. Qs, Ro, or Rs open, Qi shorted, faulty PLL. = VCO faulty, Cs open. | Qor Re open, pin 9 or VCO shorted to ground, Q, shorted. Chapter 18 The Power Supply Circuit Bridge voltages ai peak of input: Top comer: =17 V peak, bottom comer: <-17 V peak, eft comer: 16.3 V peak , right comer +16.3 peak, PIV: 32V Regulator input voltages: 7812; +16.3 V; 7912; -16.3 V Regulator current: 250 mA from each regulator. Heat sinks are not necessary. Troubleshooting Board |: Fuse may be blown, Transformer may have an open primary of secondary winding or a shorted primary winding, Board 2: Input or output of ICI may be open. Pin 2 of C1 may be open. C, or Cs may be shorted. Board 3: Input or output or pin 2 of IC2 may be open, C; or C, may be shorted. Board 4: ICI and 1C2 may be swapped. 16627. 28 . Answer: Answer: Answer: Answer: Answer: Answer: . Answer: . Answer: . Answer: Answer Difficulty: Difficulty: Difficulty: Difficulty: Difficulty: Difficulty: Difficulty: Difficulty: Difficulty: Difficulty vow Section Section Seetion Seetion Section: Section: Section: Section: Section Sect ion 193, TestbankChapter 2: Diode Applications MULTIPLE CHOICE he A diode conducts currents when forward biased and blocks current when reverse biased. a) true b) false The larger the ripple voltage, the better the filter. a) true b) false Clamping circuits use capacitors and diodes to add a de level toa wavefora a) true b) false The diode in a half-wave rectifier conducts for of the input cycle. a) 0° b) 45° ©) 90° d) 180° A full-wave bridge rectifier uses diode(s) in a bridge circuit a) b)2 °) 3 a4 A silicon diode is connected in series with 10 kQ resistor and a 12 V battery. If the cathode of the diode is connected to the positive terminal of the battery, the voltage from the anode to the negative terminal of the battery is ay oy Figure 24 194,10. u Was Testbank . Refer to Figure 2-1. If the voltmeter across the transformer secondary reads 0 Y, the probable trouble, if any, would be: a) one of ‘the diodes is open b) the filter capacitor is shorted c) the transformer secondary is open d) the inductor is open e) everything is noreal . Refer to Figure 2-1, In servicing this power supply, you notice that the ripple voltage is higher than normal and that the ripple frequency has changed to 60 Hz, The probable trouble is: a) the filter capacitor has opened b) the inductor has opened c) a diode has shorted d) a diode has opened ° @ Fignre22 . Refer to Figure 2-2 (a). This oscilloscope trace indicates the output from: a) a half-wave filtered rectifier b) a full-nave rectifier with no filter and an open diode ¢) a full-nave filtered rectifier &) a full-nave filtered rectifier with an open Refer to Figure 2-2 (b). The trace on this oscilloscope indicates the output from: a) a half-wave rectifier with no filter b) a full-nave rectifier with no filter c) a full-wave filtered rectifier d) a full-aave filtered reetifier with an open diode Refer to Figure 2-2 (c). This is the output from: a) a half-aave rectifier with no filter b) a full-vave rectifier with no filter and an open diode c) a full-wave filtered rectifier d) a full-nave filtered rectifier with an open diode Refer to Figure 2-2 (d). This trace shows the output from: a) a half-wave rectifier with no filter b) a full-wave rectifier with no filter and an open diode c) a full-nave filtered rectifier d) a full-wave filtered rectifier with an open diode 195Chapter 2: Diode Applications way pee es Ae de wr ule ay bik ® © 20, rn ate Yet” . Yea my te oS aig Sow ik ded . © a @ ~ Figwe23 13. Refer to Figure 2-3. These circuits are known as: a) amplifiers b) clippers c) clampers d) rectifiers 30 30 Y _ mn eT; * ha Be gE toe Ck ta “ny aig” at alt @ © myn me 7 myn weg BOS ibe aw mk pS 1 ao Fignee23 ® ov pv {\ wf ww a — “VW = » a) ® » © ° Figne24 14, Which of the circuits in Figure 2-3 will produce the signal in Figure 2-4? a) (a) b) (b) ©) (c) a) @) 15. Which of the circuits in Figure 2-3 will produce the signal in Figure 2-4 (b)? a) (a) b) (b) ¢) (ce) a @) 19617. 18 19, 20. Testbank . Which of the circuits in Figure 2-3 will produce the signal in Figure 2-4 (c)? a) (a) b) (b) ©) (c) d) (d) Which of the circuits in Figure 2-3 will produce the signal in Figure 2-4 (4)? a) (a) b) cb) ©) (c) d) (d) fae a oe Figure2-$ Refer to Figure 2-5 (c). This rectifier arrangement: a) will produce a positive output voltage b) will produce a negative output vol tage ¢) is incorrectly connected daore Refer to Figure 2-5 (d). This rectifier arrangement: a) will produce a positive output voltage b) will produce a negative output voltage ¢) is incorrectly connected d) none of the above A silicon diode has a voliage to ground of 117 V from the anode. The voltage to ground frow the cathode is 117.7 V. The diode is: a) open >) shorted c) forward biased d) reverse biased 2 igre 197Chapter 2: Diode Applications 21 23 24. Refer to Figure 2-1. The probable trouble, if any, indicated by these voltages: a) is one of the diodes is open b) is a diode is shorted ¢) is an open transformer secondary 4) is the filter capacitor is shorted €) is no trouble exists . Refer to Figure 2-1, If the voltmeter across the transformer reads 0 V, the probable trouble, if any, sould be a) one of the diodes is open b) is an open transformer secondary c) is the filter capacitor is shorted d) no trouble exists gare 2-2 Refer to Figure 2-2, Which oscilloscope trace indicates the output from a full-wave rectifier with an open diode? a) (a) b) (b) c) (e) a) (d) The ripple frequency of a bridge rectifier is: a) the sane as the input frequency b) double the input frequency c) four times the input frequency d) cannot be determined Figure 2-5 19825. a, 28 29. 30. 31. 32. Testbank Refer to Figure 2-5. Which diode arrangement is correct to supply a positive output voltage” a) (a) b) (b) ©) (e) a) @) With a half-wave rectified voltage across the load resistor, load current flows for what part of a cycle? a) 0 degrees b) 90 degrees c) 180 degrees d) 360 degrees When a 60 Hz sinusoidal signal voltage is applied to the input of a half-wave rectifier, the output frequency is: a) 120 Ha b) 60 Hz c) 30 He d) 90 He ‘The average value of the half-wave rectified output voltage is approxinately of Vp a) 31.8% b) 63.6% c) 70.7% d) 100% Using a practical diode as a model, what would Vpcouy) equal if Vpcin) was 10 VAC? a) 10 VAC b) 9.3 VAC c) 10.7 VAC d) 10.3 VAC One of the advantages of using transformer coupling in a half-wave rectifier is that it allows the ac source to be directly connected to the load a) true b) false If input frequency is 60 Hz, the output frequency of a bridge rectifier is: a) 30 He b) 60 Hz c) 120 Ha d) 240 Hz To obtain an output voltage with a peak equal to the input peak (minus - IN), what type of transformer and turns ratio is needed? a) Step-down/turns ratio = 2 b) Step-down/turns ratio = 4 c) Step-up/turns ratio = 4d) Step-up/turns ratio 19Chapter 2: Diode Applications 33. The de current through each diode in a bridge rectifier equals: a) twice the de load current b) half the de load current ¢) the load current d) one-forth the de load current 34, The peak inverse voltage across @ nonconducting diode is a bridge rectifier that equals approximately: a) half the peak secondary vol tage b) twice the peak secondary voll c) the peak value of the secondary voltage d) four times the peak value of the secondary voltage 35. The PIV rating of a diode in a full-wave bridge rectifier is more than that required for a full-wave center-tapped configuration. a) true b) false 36. The ideal de output voltage of a capacitor-input filter equals the: a) rms value of the rectified voltage b) peak value of the rectified voltage ¢) average value of the rectified voltage ) peak-to-peak value of the secondary vol tage 37. A filtered full-wave rectifier voltage has a smaller ripple than docs a half-wave rectifier voltage for the same load resistance and capacitor values because: a) shorter time between peaks b) longer time between peaks c) the larger the ripple, the better the filtering action ) none of the above 38. If the output of a voltage regulator varies from 20 to 19.8 V when the line voltage varies over its specified range, the source regulation is a) 0% b) 1% c) 2% d) 5% 39. Thermal shutdown occurs in an IC regulator if a) pover dissipation is too high b) internal temperature is too high c) current through the device is too high d) all the above occur 40. The efficiency of a voltage regulator is high when a) input power is low b) output porer is high ¢) Little poner is wasted d) input power is high 200a. a2 4B 45 Tes tbank ‘An increase of line voltage into a pover supply usually produces a) a decrease in load resistance b) an increase in load voltage ¢) a decrease in efficiency d) less power dissipation in the rectifier diodes A diode clamper wil a) clip off a portion of the input signal b) eliminate the positive or negative alternation of a signal ¢) add an ac voltage to a signal d) add a de voltage to @ signal Voltage multipliers use action to increase peak rectified voltages without the necessity of increasing the input transformer voltage rating. a) clipping b) clamping ¢) charging 4) cropping . Which of the following diode information is not provided by a munufacturer's datasheet? a) Frequency response b) PIV ratings c) Mechanical data d) Temperature parancters The conmpicte trouble-shooting process contains how many steps? a)4 b) 5 o) 6 a7 201Chapter 3: Special-Purpose Diodes 4 15. 16 7 18. 19 20 Refer to Figure 3-2 (b). The symbol is for a) a Zener diode b) an LED c) a Schottky diode d) a photodiode e) a tunnel diode Refer to Figure 3-2 (c). ‘The symbol is for a) a zener diode b) an L ¢) a Schottky diode ) a photodiode €) a tunnel diode Refer to Figure 3-2 (d). The symbol is for: a) a Zener diode b) an LED ¢) a Schottky diode 4) a photodiode €) a tunnel diode Refer_to Figure 3-2 (e). The synbol is for: a) a Zener diode b) an LD ¢) a Schottky diode d) a photodiode e) a tunnel diode A varactor is a diode that: a) varies its resistance with temperature b) changes its capacitance with voltage ¢) emits light when forvard biased d) switches very fast e) exhibits an increase in reverse current with light intensity A Schottky diode is a diode that: a) varies its resistance with temperature b) changes its capacitance with voltage e) emits light when forward biased ) switches very fast ce) exhibits an increase in reverse current with light intensity A photodiode is a diode that a) varies its resistance with temperature b) changes its capacitance with voltage c) eaits light when forward biased d) switches very fast e) exhibits an increase in reverse current with light intensityat 22 23 24 26. 27 28. Tes tbank ‘An LED is being tested by placing it in a fornard bias position across a 5.V de supply. The correct conclusion would be: a) nothing is wrong with the LED, go ahead and use it b) your test was correct, but the LED was bad c) your test was incorrect, and the LED is now bad d) there is no way to test the LED. Put in a new one A diode with a negative-resistance characteristic is needed. A correct selection might be: a) a tunnel diode b) a Gunn diode ¢) a varactor diode d) a Schottky diode A6.2V Zener is rated at 1 watt. The maximum safe current the Zener can carry is: a) 1.61 A b) 161 mA c) 16.1 m4 @) 1.61 mA An LED is forward biased. The diode should be on, but no light is ing. A possible problen might be the diode is open b) the series resistor is too small ) none, the diode should be off if forvard biased d) the power supply voltage is too high . The best type of diodes to use in a turning circuit is: a) an LED b) a Schottky diode ©) a Gunn diode 4) a varactor What is true about the breakdown voltage in a Zener diode? a) It deereases when current increases b) It destroys the diode c) It equals the current times the resistance d) It is approximately constant ‘vo types of reverse breakdown in a Zener diode are: a) avalanche and Zener b) avalanche and reverse c) avalanche and forvard 4) charge and discharge If the load current increases in a Zener regulator a) the series current increases b) the series current remains the same c) the Zener current increases d) both b and ¢ above 207Chapter 3: Special-Purpose Diodes 29. 30. aL. 32. 33 For Zener diodes, the temperature coefficient is a) alvays positive b) always negative ©) negative for breakdown voltages less than 5 Y and positive for breakdown voltages greater than 6 V 4) alvays zero Data sheets for Zener diodes usually specify the Zener voltage at a particular test current designated: a) Is b) Tax ©) Ian a) Ign When the source voltage increases in a Zener regulator, which of these currents remains approximately constant? a) Series current b) Zener current c) Load current 4) Total current If the load resistance decreases in a Zener regulator, the Zener current: a) decreases b) stays the same c) increases 4) equals the source voltage divided by the series resistance If the load resistance decreases in a Zener regulator. the series current a) decreases b) stays the same c) Increases d) equals the source voltage divided by the series resistance . The varactor is usually: a) forvard biased b) reverse biased ©) unbiased d) operated in the breakdown region ‘The capacitance of a varactor diode a) remains constant as the bias voltage varies b) decreases as the reverse bias voltage increases c) increases as the reverse bias voltage increases d) is usually 1000 uF or more A photodiode is normally: a) reverse biased b) forward biased c) not biased d) used to regulate vol tage 208Testbank 37. When the Light increases, the reverse minority carrier current in a photodiode: a) deereases d) increases c) is unaffected d) reverses direction 38. A blown-fuse indicator uses a: a) Zener diode b) constant-current diode c) light-emitting diode d) back diode 39. To display the digit 8 in a seven-segnent indicator a) C must be lighted b) G must be off c) F must be on d) all segnents ust be on 40. Typically the forward voltage on an LED is between: a) 1.2 to 3.2 b) 0.7 to 1.1 c) LV 10.3.7, 4) 1 6V 41. A Schottky diode: a) has a forward voltage drop of about 2 V b) has no limit on maximum current ¢) has no charge storage 4) cannot operate properly at high frequencies 42. The PIN diode, when reverse biased acts like a mearly constant a) resistance b) capaci tance c) voltage source d) current source 43. Which of the following has a negative-resistance region? a) Tunne! diode b) Step-recovery diode ¢) Schottky diode d) Optocoupler 44. When Laser diodes are operating above their threshold level of current, they produce a) incoherent light b) coherent Light ¢) high frequency d) none of the above 209Chapter 3: Special-Purpose Diodes 45. When the reverse voltage increases, the capacitance: a) decreases ) stays the sane c) increases d) has more bandwidth 21010. u 12 14 15 16. 7 18 19 2 23 24. 25. Answer Answers Answer: Answer Answer: Answer Answer: answer: Answer: Answer! Answer: Answer: Answer: Answer: Answer: answer: Answer: Answer: Answer: Answer: Answer: Answer Answer: answer: Difficulty: Difficulty: 2 Difficulty Difficulty: 2 Difficulty: 2 Difficulty: 2 Difficulty: 3 Difficulty: 3 Difficulty: 3 ficulty: 2 Difficulty: 3 w Difficulty: Difficulty: Difficulty: Difficulty: w Difficulty: . Difficulty: Difficulty: Difficulty: Difficulty Difficulty: 3 Difficulty: 2 Difficult Difficulty: Difficulty: 2u TestbankChapter 3: 26 27 28 29. 30. 31 32. 33. 34 35. 36. 37 38. 40 aL. 42. 43. 44, 45. Answer: Answer: Answer: Answer: Answer: Answer: Answer: Answer: Answer: Answer: Answer: Answer Answer: Answer: Answer: Answer: Answer: Answer: Answer: Answer Special-Purpose Diodes 4 Difficulty: a Difficulty b Difficulty © Difficulty: Difficulty: © Difficulty a Difficulty: b Difficulty b Difficulty b Difficulty © Difficulty: b Difficulty: @ Difficulty: Difficulty: a Difficulty: © Difficulty: b Difficulty a Difficulty: a. Difficulty: a Difficulty Section: 1 Section: 1 Section: 1 Seetion: 1 Seetion: 1 Scetion: 2 Section: 2 Section: 2 Section: 3 Section: 3 Section: 4 Section: 4 Section: 4 Section: 4 Section: 4 Section: 5 Section: 5 Section: 5 Section: 5 Section: 3 212Chapter 4: Bipolar Junction Transistors (BJTs) MULTIPLE CHOICE BIT transistors have two PN junctions a) true b) false A BIT transistor has the base-emitter junction reverse biased for proper operation a) true b) false The ratio Ig/Ig is Pac a) true b) false Proper operation of a BJT requires that the base-collector junction should be reverse biased. a) true b) false . The formula for Ic is, Ic = Te - Ip a) true b) false A BJT has an Ip of 75 pA and a Bye of 100. The value of Ie is a) 175 WA b) 75 aA e) 10 mA a) 7.5 m4 . Acertain transistor has an Ig = 12 mA and an Ip = 125 pA. Bag ist a) 150 b) 15 c) 96 d) 12 Normal operation of an NPN BIT requires the base to be _____with respect to the enitter, and with respeet to the collector. a) positive, negative b) positive, positive c) negative, positive 4G) negative, negative A transistor anplifier has an input voltage of 67 sY and an output voltage of 2.48 V. The voltage gain is: a) 67 b) 37 c) 27 auChapter 4: Bipolar Junction Transistors (BITS) 10. Af 12. B. 4. 15 422 nV signal is applied to the base of a properly biased transistor that has an r, = 7 and an Ro = 12 kQ. The output voltage at the collector is: a) 22 nV b) 17.1 V eo) 7V 4) 3.77V igure 41 Refer to Figure 4-1. This circuit is operating: a) in cutoff b) in saturation ¢) normally d) incorrectly because the bias voltages are wrong Refer to Figure 4-1, The value of Ip is: a) 8.6 mA b) 860 pA c) 1ma 4) 0.7 pa Refer to Figure 4-1. If the value of Vg were increased to 10 V, the transistor would be: a) cat off, b) saturated ©) operating ok d) cannot be determined Refer to Figure 4-1. If this transistor is operating in saturation, minigun value of Ic(sat) flowing i a) 9.4 oA ‘b) 4.26 mA c) 28.6 mA d) 42.6 mA Refer to Figure 4-1. Assume that this circuit is operating in cutoff. The measurement, if any, that would confirm this assumption is: TV 4d) Voc c) none of these 21416. uv 18. Tes tbank 47a Es Yaw e200 Figure 42 Refer to Figure 4-2. The value of Ip at cutoff is: a) mA b) 2.13 mA ¢) 10.65 wa 4) 10 mA Refer to Figure 4-2. If the value of, the collector resistor is increased to 6.8 KQ, the new value of Torgqry is a) 2.13 mA ) 68 mA ¢) 1.47 mA d) Om a aska % vo igue a3 Refer to Figure 4-3. If the collector resistor value is changed to 4.7 KO and Bye = 200, Ic (sat) would be: a) 4.26 mA b) 8m c) 4.26 wa 6) 8.426 mA Refer to Figure 4-3. If the measure voltage from the collector to ground was OV, the transistor is operating in: a) saturation b) cutoff ¢) norma! 4) not enough data 215Chapter 4: Bipolar Junction Transistors (BJTs) 20. 2 22 8 Refer to Figure 4-3, This circuit is saturated. To get the circuit to operate close to its linear range: a) Ry should be decreased b) Ro should be decreased c) Vig should be increased d) Rj’ should be increased 4.35 mV signal is applied to the base of a properly biased transistor with an re = 8@ and Ro = 1 k@. The output signal voltage at the collector’ is: a) 3.5 b) 28.57 V ¢) 4.375 V d) 4.375 ov Figure 41 Refer to Figure 4-1. ‘The value of Vog is: a) 9.9 b) 9.2 c) 0.7 4) 19.3 Figure s-2 Refer to Figure 4-2. The minimun value of Ig that will produce saturation is: a) 0.25 mA b) 5.325 wa ©) 1.065 wa d) 10.65 wa 216Chapter 4: Bipolar Junction Transistors (BJTs) 30, 31 34 35 36 37 In a transistor, collector current is controlled by: a) collector voltage b) base current ¢) collector resistance 4) all of the above Most of the electrons in the base of an NPN transistor flow: a) out of the base lead b) into the collector €) into the emitter 4) into the base supply When a transistor is operated in the active region, changes in the collector voltage Voc: a) produce changes in collector current b) produce changes in base voltage c) have little or no effect on collector current 4) produce changes in emitter voltage A bipolar junction transistor has regions of operation ay b) 2 ©) 3 a) 4 Which region in a transistor has to dissipate the most heat? a) Emitter b) Base c) Collector d) Anode The symbol hpg is the sane as: a) BDC b) abc ©) hj-Fj d) Bac Ycg approximately equals when a transistor switch is in saturation. a) Vo b) Vp. co) 02V a) 0.7 When @ transistor switeh is on, the collector current is limited by a) the base current ‘b) the load resistance c) the basc voltage d) the base resistance 21838. 39 40 al 42. 43 Testbank The signal output voltage (Vopi) is a function of the a) current flowing base to collector b) voltage drop emitter 10 base ¢) power being dissipated in the collector d) changing collector current (Ic) floxing through the collector resistor Re ‘The signal voltage gain of an amplifier, ay, is defined as a b) Ay = Tex Re yy & a) Re Ay = WR Vhen transistors are used in digital circuits they usually operate in the: a) active region b) breakdown region ¢) saturation and cutoff regions d) linear region Vhen trouble-shooting a Bipolar Junction Transistor using an obmeter, and one of the junctions reads lov in both directions, the junction is shorted and the transistor is bad. If one of the junctions reads high in both directions, the junction is shorted and the transistor is good? a) true b) false ‘The transistor provides the control function of opening or closing a a) voltage path b) current path ©) poret DAL d) ground path When a transistor switch is on, the collector current is limited by a) the base current b) the load resistance ¢) the base voltage d) the base resistance . A (ransistor output characteristic curve is a graph showing: a) emitter current (Ig) versus collector/enitter voltage (Vcp) with (Ig) base current held constant. b) collector current (Ic) versus collector/emitter voltage (Veg) with (Ig) base current held constant. ©) collector current (Ic) versus collector/enitter voltage (Ve) with (Ig) base current held constant. 4) collector current (Ig) versus collector/enitter voltage (Voc) with (Ig) base current hefd constant. 219Chapter 4: Bipolar Junction Transistors (BJTs) 1. Answer: a Difficulty: 2 2. Answer: b Difficulty: 2 3. Answer: b Difficulty: 2 4. Answer: a Difficulty: 2 5, Answer: a Difficulty: 2 6. Answer: d Difficulty 7. Answer: © Difficulty: 2 8. Answer: a Difficulty: 2 9. answer: b Difficulty: 10. Answer: d Difficulty: 11. Answer: ¢ Difficulty: 12. Answer: b Difficulty 13. Answer: b Difficulty: 14. Answer: d Difficulty: 15. Answer: ¢ Difficulty 16. Answer: a Difficulty: 17, Answer: ¢ Difficulty: 2 18. Answer: a Difficulty: 19. Answer: a Difficulty: 20. Answer: d Difficulty: 21. Ansner: © Difficulty: n 22. Answer: a Difficulty: b 23, Answer: d Difficulty: 24. Answer: b Difficulty: 2 25. Answer: ¢ Difficulty:26. 27. 28. 29. 30. al 32. 33, Me 35. 36 37. 38. 29. 4l 42. 43. Answer: Answer: Answer: Ansner: Ansner Answer: Ansner Ansner: Answer: Answer: Ansner Ansner: Answer Answer: . Answer: Answer: Answer: Answer: Answer: o Difficulty: Difficulty: Difficulty: Difficulty: Difficulty: Difficulty: Difficulty: Difficulty: Difficulty: Difficulty: Difficulty: Difficulty: Difficulty Difficulty: Difficulty: Difficulty: Difficulty: Difficulty: Difficulty: RoR Ye Ree NN DD Section: 1 Scetion: 2 Section: 2 Section: 3 Section: 3 Section: 3 Seetion: 3 Section: 3 Section: 3 Section: 3 Seetion: 3 Section: 3 Seetion: 4 Section: 4 Section: 5 Seet ion: 7 Seetion: 3 Section: 5 Seetion: 3 221 TestbankChapter 5: Transistor Bias Circuits MULTIPLE CHOICE 1. Biasing a BIT amplifier means setting the de voltages with the correct bias for proper operation. a) true b) false A transistor operating in satura a) true b) false n has very little current flowing. . The base of fixed-bias circuit arrangement provides good stability because the Q-point does not vary with teaperature. a) true b) false Negative feedback in the collector-feedback circuit provides a more stable operat ion. a) true b) false . The correct formula for finding the de current gain is Pyc = Ip/Ig a) true b) false A certain transistor in a fixed-bias circuit has these values, Tp = 50 UA, Bac = 125, Voc = 18 V, and Re = 1.2 kQ. Vo is ay ov b) 7.5 ©) 10.5 Y 4) 18'V An indication of cutoff is that: a) Te = Tecsat b) ve, = 0? c) Vag = 0.79 4) Vor = Veo Vee av Be Bea ska FF very Figure $1 Refer to Figure 5-1, This transistor is biased for a) saturation b) linear c) cutoff d)aore operation. RTestbank 22, Refer to Figure 5-3 (b). The most probable cause of trouble, if any, from these Voltage measurements is: a) the base-enitter junction is open b) Re is open ¢) a short fron collector to emitter d) no problens Higwre 53 © 23. Refer to Figure 5-3 (c). The most probable cause of trouble, if any, From these Voltage measurements is: a) the base-enitter junction is open b) Re is open ¢) a short fron collector to emitter 4) no problems 24. Refer to Figure 5-3 (d). The most probable cause of trouble, if any, from these voltage measurements is: a) the basc-cnitter junction is open b) Re is open ¢) a short from collector to emitter 4) no problems 25. The most suitable biasing technique used is the: a) base-bias b) cmitter-bias ¢) voltage-divider bias d) collector-bias 26. Improper biasing can cause distortion in transistor circuits: a) input signal 'b) output signal €) input/output signal d) frequency response 27. On a de load line, the area between saturation and cutoff is called the a) saturation zone ») depletion region ¢) linear region 4) breakdown region 225Chapter 5: Transistor Bias Circuits 28. Three different Q points are shown on a de load line. The upper Q point represents the: a) minimum current gain b) intermediate current gain ¢) maximum current gain 4) cutoff point 29. If a transistor operates at the middle of the de load line, a decrease in the current gain will move the Q point: a) off the load Tine b) nowhere ©) up d) down 30. The input resistance, Rj,, of a voltage-divider biased NPN transistor is by a factor of Peta. stepped-up stepped-down not affected none of the above eese 31. Yoltage-divider bias provides: a) an unstable Q point b) a stable Q point ©) AQ point that easily varies with changes in the transistor's current gain 4) both a and ¢ above 32. For transistors using voltage-divider bias, the base current should be a) much larger than the current through the voltage divider b) about one-half the collector current ¢) auch smaller than the current through the voltage divider d) Peta times larger than the collector current 33, With voltage-divider bias, the base voltage is a) less than the base supply voltage b) equal to the base supply vol tage ¢) greater than the base supply vol tage 4) greater than the collector supply voltage 34, Base bias provides a) a very stable Q point b) a very unstable Q point ¢) no current gain 4) zero current in the base and collector circuits 35. A circuit with a Fixed emitter current is called a) base-bias b) emitter-bias ¢) transistor-bias 4) two-supply bias 22636 38. 29. 41. 42. 43 . The emitter resistor in a voltage-d Testbank For emitter bias, changes in current gain: a) do not affect’ the Q point b) severely affect the Q point ¢) do not occur in the transistor 4) affect the collector voltage For collector feedback bias, the Q point is set near the center of the load Lise by making: ‘The Q-point of 2 Two Supply Enitter-Bias circuit is not affected by a) Voc b) collector resistance c) emitter resistance d) current gain When measuring the resistance between the collector and emitter with an ohmeter, the reading should be: a) low in both directions b) high in both directions c) high in one direction and low in the other d) zero both ways ider bias cireuit is shorted. The collector voltage will equal approximately: a) Veo boy ¢) one-half Yoo 4) mone of the above If the base-emitter junction opens in a voltage-divider bias circuit, the emitter voltage Will measure ayoy b) 0.7 V less than the base c) 0.7 V more than the base d) a voltage nearly equal to Voc If the collector resistor decreases to zero in a base-biased circuit, the load Line will become: a) horizontal b) vertical c) useless d) flat The first step in analyzing emitter-based circuits is to Find the a) base current b) emitter voltage ¢) emitter current d) collector current 227Chapter 5: Transistor Bias Circuits 44. If the current gain is unknoyn in an emitter-biased circuit, you cannot calculate the: 4) enitter voltage b) emitter current c) collector current d) base current 45. If the emitter resistor is open, the collector voltage is: a) Low b) high ¢) unchanged d) unknown 228