PROCEEDINGS OF SPIE

SPIEDigitalLibrary.org/conference-proceedings-of-spie

Organic light-emitting diode (OLED)

and its application to lighting devices

Nobuhiro Ide, Takuya Komoda, Junji Kido

Nobuhiro Ide, Takuya Komoda, Junji Kido, "Organic light-emitting diode

(OLED) and its application to lighting devices," Proc. SPIE 6333, Organic
Light Emitting Materials and Devices X, 63330M (5 December 2006); doi:
10.1117/12.683215

Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 01 Mar 2023 Terms of Use: https://www.spiedigitallibrary.org/terms-of-use

 Organic Light Emitting Diode (OLED)
and its application to lighting devices
Nobuhiro Ide*a,b, Takuya Komodaa,b, Junji Kidob,c
a
Advanced Technologies Development Laboratory, Matsushita Electric Works, Ltd.,
1048 Kadoma, Osaka 571-8686, Japan
b
Optoelectronic Industry and Technology Development Association,
1-20-10 Sekiguchi, Bunkyo-ku, Tokyo 112-0014, Japan.
c
Polymer Science and Engineering, Yamagata University,
4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan.

ABSTRACT

Organic Light Emitting Diode (OLED) is an emerging technology as one of the strong candidates for next generation
solid state lighting with various advantages such as thin flat shape, no UV emission and environmental benefits. At
this moment, OLED still has a lot of issues to be solved before widely used as lighting devices. Nonetheless, typical
properties of OLED, such as efficiency and lifetime, have been recently made great progress. For example, a green
phosphorescent OLED with over 100 lm/W and a red fluorescent OLED with an estimated half decay time of over
100,000 h at 1,000 cd/m2 were reported. Large area, white OLEDs with long lifetime were also demonstrated. In this
way, some of the issues are going to be steadily overcome. In this publication, we will present a phosphorescent white
OLED with a high luminous efficiency of 46 lm/W and an external quantum efficiency of 20.6 percent observed at 100
cd/m2. This device achieves a luminous efficiency of 62.8 lm/W with a light-outcoupling film attached on the glass
substrate. This is one of the highest values so far reported for white OLEDs. And we will also show a color-tunable
stacked OLED with improved emission characteristics. This device minimizes a viewing angle dependence of the
emission spectra and has color tunability from white to reddish-white. These technologies will be applied to OLED
lighting.

Keywords: high-efficiency, high mobility, white emission, multi-unit, optical interference, color-tunable

1. INTRODUCTION

In recent days, organic light emitting diode (OLED) is commercially available, for example, as small mobile
displays installed in cellular phones, MP3 players and PDAs. Some of the advantages such as low driving voltage,
quick response and a good visibility even in a bright place are suitable to these kinds of applications. Moreover, since
the invention of white OLED by Kido et al. in 19931, the application of white OLED for the next generation solid state
lighting source also has been actively discussed. OLED is expected to attain some properties which have never been
realized by the conventional lighting sources, e.g., very thin flat shape, large area uniformity and very high efficiency.
Moreover, compared to the mercury containing conventional fluorescent lamps, mercury-free “Organic-LED” is
strongly awaited from the view point of global environmental conservation. However, OLEDs still have a number of
issues to be overcome before they are accomplished as novel lighting devices.
Recently, great progresses in efficiency have been made by using phosphorescent emitting materials.2 In
these systems, the energies of both singlet and triplet excited states are converted to the photon and, theoretically, the
internal quantum efficiency of 100 percent is expected. Some successful results of very high efficiencies over 100
lm/W of green OLEDs were reported,3 which experimentally suggest the internal quantum efficiency would achieve
almost 100 percent. However, until recently, the efficiency of blue phosphorescent OLEDs had not been so good. It
is because of the difficulty of the development of wide-energy-gap host and charge transport materials which can
achieve high efficiency phosphorescent OLEDs by confining the energy to the phosphorescent dopant. When the
triplet energy level (T1) of the host material of emissive layer is lower than T1 of the dopant, the undesirable energy
transfer from the dopant to the host material limits the device efficiency.4 Lately, hole transporting and host materials

Organic Light Emitting Materials and Devices X, edited by Zakya H. Kafafi, Franky So,
Proc. of SPIE Vol. 6333, 63330M, (2006) · 0277-786X/06/$15 · doi: 10.1117/12.683215

Proc. of SPIE Vol. 6333 63330M-1

Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 01 Mar 2023

Terms of Use: https://www.spiedigitallibrary.org/terms-of-use
 suitable for the blue phosphorescent OLEDs were initially synthesized5-9 and electron transport materials were
eventually developed. With these newly developed materials, the power efficiency and the external quantum
efficiency (EQE) of blue phosphorescent OLED have just reached to about 40 lm/W and 20 percent, respectively.10,11
After the development of these materials, efficiency of white OLEDs consisting of blue and other phosphorescent
emitter(s) is also improved.12-14 The power efficiency of about 30 lm/W and the lifetime of over 10,000 h were
reported in these days. Also in white OLED systems, wide gap materials are absolutely imperative.
Another key technology of OLED is the vertical stacking of OLED devices, “multi-unit OLED”. This
device has a layered structure with alternately stacked emissive units and transparent connecting layers (figure 1).15,16
A lot of researches are devoting their effort to this device, fascinated by the advantages, e.g., high efficiency and very
long lifetime even at high luminance. Additionally, the structure of this device is suitable to mix the emissions to tune
various colors including white. Actually, with this technology, white OLEDs with very long lifetime (over 30,000 h at
5,000 cd/m2) were reported and demonstrated in some exhibitions.

multi-unit OLED
cathode
emissive unit

・・・
・・・

transparent
connecting layers
conventional OLED
emissive unit

emissive
emissive unit
unit
transparent
anode

Figure 1: Structures of multi-unit OLED and conventional OLED.

In this report, first, the authors will show the very high-efficiency white OLEDs with wide-energy-gap
organic materials and show that the high performance organic materials enable to simplify the structure of OLED device.
Then a novel structure of multi-unit OLED device will be described. With this structure, we can realize the excellent
emission characteristics and color tunability.

2. HIGH-EFFICIENCY WHITE OLED

2.1 Experimental
Figure 2 shows the chemical structures of organic materials used in this work. Wide-energy-gap charge
transport materials (DTASi,8 TmPyPhB11 and TpPyPhB17) and a host material (4CzPBP9) were developed in the
research of “Advanced Organic Device Project.” Figure 3 shows the typical configuration of phosphorescent OLEDs
fabricated in this work: glass substrate / ITO / hole injection layer (HIL) / hole transport layers (HTL) / emissive layer(s)
(EML) / electron transport layer (ETL) / LiF / Al. FIrpic is a blue phosphorescent material and PQ2Ir(acac) is an
orange phosphorescent material, respectively.

Proc. of SPIE Vol. 6333 63330M-2

Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 01 Mar 2023

Terms of Use: https://www.spiedigitallibrary.org/terms-of-use
 N
N
H3C CH3
LiF / Al
N
N
N Si
electron transport layer

H3 C CH3 N
DTASi
DTASi TmPyPhB N TpPyPhB N
emissive layer(s)
F
F

hole transport layers

N N
O O
N O
Ir
Ir
N
F
N
O hole injection layer
N
N
4CzPBP
4CzPBP ITO
F

PQ
PQ2Ir(acac)
glass substrate
FIrpic
FIrpic 2Ir(acac)

Figure 2: Chemical structures of organic materials. Figure 3: Schematic diagram of OLEDs.

OLED devices were fabricated in a multi-chamber vacuum deposition system. All layers were thermally
evapolated below a pressure of 1 × 10-4 Pa. Prior to the deposition, a glass substrate with a 110 nm thick ITO electrode
was cleaned by sequential ultrasonication in detergent, deionized water and acetone, then was exposed to isopropyl
alcohol vapour and dried. After exposure to UV-light under the atmosphere for 10 min, the substrate was transferred to
the high vacuum evaporation system. A 30 nm thick hole injection layer of a mixture of NPD and MoO3 (a molar ratio
was 1:1), a 10 nm thick NPD and a 10 nm thick DTASi as hole transport layers were evaporated. Then, an emissive
layer(s) and an electron transport layer were deposited. The structure of the emissive layer and thicknesses of these
layers will be shown below. Through a metal shadow mask, a 0.5 nm thick LiF as an electron injection layer, and an
80 nm thick Al as a cathode were then deposited. Emitting areas of OLEDs were defined as 10 × 10 mm2 by the metal
mask. Devices were encapsulated using glass lids and UV-cure resin under the nitrogen atmosphere. Luminance
measurement was carried out with a Topcon BM-8 luminance meter. EL spectra and emission distribution pattern (the
emission intensities and spectra obtained at various angles) were evaluated with an optical multichannel analyzer
PMA11 (Hamamatsu Photonics. K.K.) A power efficiency and an external quantum efficiency were corrected by the
emission pattern.18 Improvement of light outcoupling efficiency was achieved with a 10 × 10 mm2 of diffusive optical
film (OPALUS BS300, Keiwa Inc.) attached by water onto the glass substrate of the white OLED.
Ionized potentials were evaluated by a photon-electron spectrometer AC-3 (Riken Keiki) and energy gaps of
organic materials were optically estimated from the onset of the UV-Vis absorption spectrum. Electron affinity was
calculated by subtracting the energy gap from the ionized potential. Triplet energy level, T1, was estimated from the
onset of PL spectra obtained at 4.2 K for host and carrier transport materials, or at room temperature for phosphorescent
dopants

2.2 Blue phosphorescent OLED

A 10 nm thick emissive layer consisting of 4CzPBP as a host and 15 percent of Firpic as a dopant, and a 40
nm thick TmPyPhB as an electron transporting layer were used to fabricate a blue phosphorescent OLED. An energy
diagram of this device and ionized potentials, electron affinities, energy gaps and T1 energy levels are shown in figure 4.
Energy gaps of the carrier transporting and host materials are quite larger than that of FIrpic, and the triplet levels of
those materials were more than or almost the same as T1 of FIrpic. As expected, a power efficiency of 37.8 lm/W and
an external quantum efficiency of 18.0 percent at 100 cd/m2 were readily obtained. This result indicates that the triplet
energy is effectively confined to FIrpic. And a turn-on voltage (over 1 cd/m2) was only 2.7 V and a luminance of 100
cd/m2 was obtained at 3.5 V. These voltages are relatively low for thick, non-PIN type phosphorescent OLEDs (PIN
OLED19: OLED with thick p-doped and n-doped carrier injection / transport layers).

Proc. of SPIE Vol. 6333 63330M-3

Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 01 Mar 2023

Terms of Use: https://www.spiedigitallibrary.org/terms-of-use
 2.25
2.0
2.60 Electron
2.73
affinity

DTASi (3.41)
3.0
3.47

4CzPBP (3.44)

TmPyPhB (3.95)
energy / eV

FIrpic (2.68)
4.0

5.0

6.0 5.66
6.06 6.15 Ionized
6.68 potential
7.0
T1 / eV : 2.95 2.77 2.76 2.75

Figure 4: Energy diagram of the blue phosphorescent OLED. Ionized potentials, electron affinities, energy
gaps (in parentheses) and T1 are written in this figure.

2.3 White phosphorescent OLED

Two white OLEDs having different emissive-layer structures and an electron transport layer were fabricated.
(Device A: two emissive layers of a 10 nm thick blue emissive layer and a 10 nm thick orange emissive layer were
stacked. Blue emissive layer was FIrpic (15 percent)-doped 4CzPBP and orange emissive layer was PQ2Ir(acac) (6
percent)-doped BAlq, respectively. An electron transport layer was a 30 nm thick TmPyPhB. Device B: three
emissive layers of a 4 nm thick blue emissive layer, a 0.5 nm thick orange emissive layer and a 5.5 nm thick blue
emissive layer were stacked in this order. Blue emissive layers were FIrpic (15 percent)-doped 4CzPBP and orange
emissive layer was PQ2Ir(acac) (3 percent)-doped 4CzPBP, respectively. An electron transport layer was a 40 nm thick
TmPyPhB.) Figure 5 shows the luminance dependence of emission spectra of (a) device A and (b) device B, and (c)
the Commission Internationale de l’Eclairage (CIE) chromaticity coordinate shift of device A and B. Two emission
peaks originated from FIrpic (around 500 nm) and from PQ2Ir(acac) (around 595 nm) were observed. Device A
showed a drastic change of emission spectra and the large shift of CIE coordinate when the luminance was varied. On
the other hand, device B exhibited very small changes of EL spectra and CIE coordinate, and more precisely, the
intensity of orange emission to blue emission reach the maximum at 200 cd/m2 and then decreased. These behaviours
would be due to the shift of recombination zone from the interface of the hole transport layer and the emissive layer
toward the cathode. This suggests that carefully designed multilayered emissive layers can reduce the undesirable
change of emission spectra. Device B showed a luminance of 100 cd/m2 at 3.4 V, a power efficiency of 35 lm/W and
an external quantum efficiency of 16.7 %. With light outcoupling enhancement, the power efficiency and EQE
increased to 44.5 lm/W and 21.4 %, respectively. The enhancement factor in this system was about 1.3.

0.9
(c)
(a) (b) luminance 0.8
normalized intensity / a.u.
normalized intensity / a.u.

(cd m-2)
0.7
200
luminance
10 / 1,000 0.6 Device B 10
(cd m-2)
1,000
3,000 0.5 3,000 200
4,000 CIE-y
2,000 0.4
1,000
0.3 100 1,000 4,000
100 2,000
0.2 Device A
0.1
400 500 600 700 400 500 600 700 0
wavelength / nm wavelength / nm 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
CIE-x
Figure 5: The luminance dependence of emission spectra of (a) device A and (b) device B, respectively, and
(c) the luminance dependence of CIE coordinates (open circle: device A, closed square: device B,
and values in the figure are observed luminance).

Proc. of SPIE Vol. 6333 63330M-4

Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 01 Mar 2023

Terms of Use: https://www.spiedigitallibrary.org/terms-of-use
 From the aspect of an optical designing, an influence of a thickness of electron transporting layer was
investigated. We adjusted an optical distance from an emissive layer to a reflective cathode as about one-quarter of
wavelength. The median of emission spectra in these systems was around 550 nm and assuming that refractive indices
of emissive layers and electron transporting layer were 1.7, the expected thickness of an electron transporting layer was
estimated to be around 70 nm. Based on this estimation, device C with a 70 nm thick electron transporting layer was
fabricated, and the enhancement factor and the efficiencies of the device C were evaluated. The enhancement factor
increased to about 1.5, and higher external quantum efficiency of 25.9 percent was obtained. However, the driving
voltage of this device at 100 cd/m2 increased to 3.8 V from 3.4 V of device B. As a result, the power efficiency at 100
cd/m2 showed no increment (43.7 lm/W).
This voltage increase would be attributed to the low electron mobility of TmPyPhB. We evaluated the
electron mobilities of TmPyPhB and another electron transport material, TpPyPhB by time-of-flight (TOF) method. A
device structure for TOF measurement was ITO (110 nm) / organic material (8,000 nm) / Al (20 nm). Under the
electric field of 360 KV/cm, a pulsed laser (337 nm) was exposed and a transient current profile was recorded by
oscilloscope. Electron mobilities of TmPyPhB and TpPyPhB were estimated to be 5 × 10-4 cm2/Vs and 7 × 10-3
cm2/Vs, respectively. Compared to TmPyPhB, TpPyPhB has quite high electron mobility, which may be the highest
value so far reported previously. Refractive indices of them were measured by ellipsometry. Three dimensional
molecular structures were simulated by “Material Studio® Dmol3” (Accelrys K. K.) that is the program of density
functional theory (DFT) quantum mechanical code. Refractive indices at 500 nm were 1.75 for TmPyPhB and 1.97 for
TpPyPhB. The refractive index of TpPyPhB (1.97) is fairly higher compared to those of typical organic materials used
in OLED devices. Figure 6 shows the optimized structures of TmPyPhB and TpPyPhB. TmPyPhB has a twisted
bulky structure. On the other hand, TpPhPhB has a thin flat shape. The high refractive index and the flat shape of
TpPyPhB suggest that the molecules of TpPyPhB are densely packed in a thin evaporated film and can well explain
very high electron mobility of TpPyPhB.

TmPyPhB TpPyPhB
N
N

Chemical N

structure
N
N
N

Top view

Side view

Figure 6: Chemical structures and three dimensional structures of TmPyPhB and TpPyPhB.

Thus we employed a 60 nm thick TpPyPhB as an electron transport material for device D. Owing to the
higher refractive index of TpPyPhB, the thickness of this layer to keep the proper optical distance can be reduced to 60
nm from 70 nm. An energy gap and triplet energy level of TpPyPhB are 3.61 eV and 2.56 eV, respectively. Figure 7
shows the (a) luminance – voltage and (b) power efficiency – luminance characteristics of device D. Very steep
increment of luminance was observed and the driving voltage at 100 cd/m2 was only 3.25 V. It is quite low especially
for the OLED devices without n-doped carrier injection layer. This suggests that when we can apply the organic

Proc. of SPIE Vol. 6333 63330M-5

Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 01 Mar 2023

Terms of Use: https://www.spiedigitallibrary.org/terms-of-use
 material having very high mobility to the carrier transport layer, the intentionally doped transport layer may not be
necessary. The power efficiency and EQE were 44.7 lm/W and 20.6 %, respectively, and CIE coordinate was (0.31,
0.40). With an improvement of light outcoupling efficiency, the power efficiency and EQE reached 62.8 lm/W and
29.7 percent at 100 cd/m2, respectively. The enhancement factor of 1.4, the driving voltage of 3.18 V and CIE
chromaticity coordinate of (0.28, 0.41) were observed. The emission spectra with and without a light outcoupling
enhancement sheet were shown in figure 8.

104
+04 60
(a) (b)
103

power efficiency / lm W -1
+03 50
luminance / cd m-2

102
+02 40

1
10
+01 30

0
10
+00 20

-1
10
E-01 10

10-2
E-02 0
-1 0 1
2 2.5 3 3.5 4 4.5 5 10
0.1 10
1 10
10 102
100 103 10000
1000 104
voltage / V luminance / cd m -2

Figure 7: (a) Luminance – voltage characteristics and (b) power efficiency – luminance characteristics of
device D.
intensity / a.u.

without outcoupling
enhancement

with outcoupling
enhancement

400 500 600 700

wavelength / nm

Figure 8: Emission spectra of device D.

3. COLOR-TUNABLE MULTI-UNIT OLED

3.1 Advantages and issues in the multi-unit OLED

The multi-unit OLED has vertically stacked plural emissive units as shown in figure 1. Owing to this
structure, emissions from each emissive units are combined within the same area, and thus, the brighter emission
compared to the conventional OLED will be obtained. And the lifetime of 2-unit and 3-unit MP-OLED were almost
the same as or longer than that of single unit device even at the doubled and tripled luminance. These results suggest
that both the limitation of the quantum efficiency and the trade-off between lifetime and luminance can be removed by
this technology.

Proc. of SPIE Vol. 6333 63330M-6

Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 01 Mar 2023

Terms of Use: https://www.spiedigitallibrary.org/terms-of-use
 MPE-OLEDs generally show specific emission characteristics due to the optical interference in the device.20
When the optical design of the structure is improper, a spectral change with stacking the emissive units and a large
viewing angle dependence of the emission spectra are observed as shown in figure 9. Generally, an optical
interference in OLED is one of the most important effects to be considered to design the device structure. The main
cause of the optical interference is an existence of a reflective cathode. As drawn in the basic model of the optical
interference (figure 10), a direct emission from the emissive layer toward a substrate and a reflection from the cathode
make a strong interference. Based on this model, the optical length from the emission layer to the cathode is usually
adjusted to (2n-1)λ / 4, here, n is an integer number and λ is a desired wavelength to be enhanced. This model is also
applicable to the multi-unit structure. However, there are plural emissive units in the multi-unit device so that it is
required to adjust the optical interferences for all emissive units at the same time. Furthermore, the optical interference
in the thick OLED devices strongly change the emission spectra. We simulated the emission spectra of blue OLEDs
with various distances from the emissive layer to the cathode. The distances were given as (2n-1)λ / 4 (n = 1 ~ 6) and
the wavelength to be enhanced by optical interference was set to 470 nm. The narrowing of the spectra and the
emerging of the sub-peak around 560 nm were simulated (figure 11). Thus the optimization of the device structure
would be quite difficult especially in the production stage, so that a novel structure exhibiting the weaker optical
interference would be favourable.
normalized intensity / a.u.

(a) (b) 3-unit OLED

3-unit OLED o
0 o
2-unit OLED 20
o
40
o
single unit 60

400
400 500
500 600
600 400 500 600
wavelength / nm wavelength
wavelength(nm)
/ nm

Figure 9: (a) Spectral change with unit-stacking and (b) angular dependence of emission spectra in 3-unit OLED

substrate

anode
emissive layer
λ/4
cathode
(mirror)

Figure 10: The basic model of optical interference. (Left: conventional single unit OLED Right: multi-unit OLED)

Proc. of SPIE Vol. 6333 63330M-7

Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 01 Mar 2023

Terms of Use: https://www.spiedigitallibrary.org/terms-of-use
 normalized intensity / a.u.
λ/4
3λ/4
5λ/4
7λ/4
11λ/4
9λ/4

400 500 600

wavelength / nm

Figure 11: Simulated spectra of OLEDs with various distances from the emissive layer to the cathode. The
wavelength to be enhanced by the optical interference is set to 470 nm.

3.2 Optically modified multi-unit OLED and color tunable multi-unit OLED
White multi-unit OLEDs having three emissive units were fabricated. Figure 12(a) shows the brief
configuration of the device. The device structure was: glass substrate / ITO (as a transparent cathode) / alkaline metal
doped electron injection layer (EIL) / blue emissive layer (blue-EML) / hole transport layer (HTL) / p-doped hole
injection layer (HIL) / EIL / yellow emissive layer (yellow-EML) / HTL / HIL / EIL / blue-EML / HTL / HIL / anode.
A pair of the alkaline doped EIL and p-doped HIL works as the transparent connecting layer. An 80 nm thick Al as a
reflective anode and a 10 nm thick Au as a semi-transparent anode were employed. Figure 12 shows the emission
spectra of white MPE-OLEDs with (b) the reflective anode observed from the substrate side or (c) the semi-transparent
anode observed from the anode side, respectivelly. In this case, we didn’t adjust the layer thicknesses optically so that
the angular dependence of the device with the reflective anode was quite large. White Emission was observed at 0
degree, but bluish-green emission became stronger with a viewing angle increment (CIE coordinates: (0.35, 0.39) at 0
degree, (0.29, 0.48) at 60 degree, respectively). On the other hand, by using the transparent anode, the angular
dependence of emission spectra is considerably diminished.
normalized intensity / a.u.
a.u.
intensity //a.u.

anode (a) 0
o
60
o
(b) o (c)
60
o
normalized intensity

40
blue 20
o
o
20
yellow o
o
40 0
blue
normalized

400 500
500 600 700 400
700 400 500
500 600
600 700
700
wavelength
wavelength // nm
nm wavelength
wavelength / /nm
nm

Figure 12: (a) The device structure of 3-unit white OLED and the angular dependence of emission spectra of
white multi-unit OLEDs with (b) the reflective anode (80 nm thick Al) and (c) the
semi-transparent anode (10 nm thick Au), respectively.

In the device with the semi-transparent anode, emission is observed from both the anode side and the substrate side.
By placing a mirror on the back of the substrate, the substrate side emission is reflected through the substrate to the
anode side (figure 13) and, actually, the luminance observed from the anode side was almost doubled. In this system,
the 0.7 mm thick glass substrate works as an optical spacer that is thick enough to eliminate the optical interference.
As a result, the angular dependence of the spectra was fairly reduced, which was much smaller dependence compared to
the angular dependence observed in the multi-unit OLED with the reflective anode (figure 12(b)).

Proc. of SPIE Vol. 6333 63330M-8

Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 01 Mar 2023

Terms of Use: https://www.spiedigitallibrary.org/terms-of-use
 a.u.
intensity // a.u.
o
60

normalized intensity
o
40 o
20 o
0

normalized
400 500 600 700
mirror
wavelength / nm

Figure 13: Device structure and the angular dependence of emission spectra of OLED with the mirror.

Additionally, another red OLED is optically adhered underneath the white multi-unit OLED (figure 14(a)).
The refractive index of the adhesive used here was about 1.5. In this system, substrates behave as both the interference
reduction layer and an insulator between electrodes of OLEDs. Thus, two OLEDs can be operated at different
conditions and color tunability from white to reddish-white as the mixed emissions at various ratios is realized.
Furthermore, very small angular dependences of CIE coordinates with good CRI (over 80) at various colors are obtained.
Owing to these advantages, this new multi-unit OLED would be applicable to many applications, such as backlights,
small light sources, and lighting.

(a) 0.6
greehish- (b)
blue normal yellaw
yellow V1 multi-unit OLED
,Hs8parange
0.5
blue yellaw
Y o
80 yellavAsh-
0.4 . pink
o —I— 600
red 0
V2 this work
0.3
0.2 0.3 0.4 0.5 0.6 0.7
X

Figure 14: (a) Device structure of the color tunable multi-unit OLED and (b) angular dependence of CIE
coordinates (0o ~ 80o) at various colors

4. CONCLUSIONS

In this study, we realized a high-efficiency phosphorescent white OLED with a luminous efficiency of 46
lm/W and an external quantum efficiency of 20.6 percent at 100 cd/m2. With a light-outcoupling film attached on the
glass substrate, this device achieves a luminous efficiency of 62.8 lm/W. This is one of the highest values so far
reported for white OLEDs. And we will also show a color-tunable stacked OLED with improved emission
characteristics. This device minimizes a viewing angle dependence of the emission spectra and has color tunability
from the white to the reddish-white. These technologies will be applied to OLED lighting.

Proc. of SPIE Vol. 6333 63330M-9

Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 01 Mar 2023

Terms of Use: https://www.spiedigitallibrary.org/terms-of-use
 ACKNOWLEDGMENT

A part of this work belongs to “Advanced Organic Device Project” which OITDA contracted with New Energy and
Industrial Technology Development Organization (NEDO).

REFERENCES

1. J. Kido, K. Hongawa, K. Okuyama, and K. Nagai, Appl. Phys. Lett. 64, 81 (1994).
2. R. F. Service, Science 310, 1762 (2005).
3. J. Bimstock, A. Lux, M. Ammann, P. Wellmann, M. Hofmann and T. Stübinger, SID 06 DIGEST, 1866 (2006).
4. C. Adachi, R. C. Kwong, P. Djurovich, V. Adamovich, M. A. Baldo, M. E. Thompson and S. R. Forrest, Appl. Phys.
Lett. 79, 2082 (2001).
5. S. Tokito, T. Iijima, Y. Suzuri, H. Kita, T. Tsuzuki and F. Sato, Appl. Phys. Lett. 83, 569 (2003).
6. R. J. Holmes, S. R. Forrest, Y.-J. Tung, R. C. Kwong, J. J. Brown, S. Garon and M. E. Thompson, Appl. Phys. Lett.
82, 2422 (2003).
7. S. Watanabe, D. Tanaka and J. Kido, Japan Society of Appl. Phys., Ext. Abstr., (51th Spring Meeting, 2004),
30p-ZN-8 (2004).
8 D. Tanaka, H. Shimizu, S. Watanabe and J. Kido, Polymer Preprints (53rd SPSJ Annual Meeting, 2004), IPb136
(2004).
9 Y. Agata, H. Shimizu and J. Kido, Polymer Preprints (53rd SPSJ Annual Meeting, 2004), IPb137 (2004).
10. J. Kido, N. Ide, Y. Li, Y. Agata and H. Shimizu, IQEC/CLEO-PR (2005).
11. S.-J. Su, D. Tanaka, Y. Agata, H. Shimizu, T. Takeda and J. Kido, 2005 MRS Fall Meeting (D3.21) (2005).
12. S. Tokito, T. Iijima, T. Tsuzuki and F. Sato, Appl. Phys. Lett. 83, 2459 (2003).
13. Y.-J. Tung, T. Ngo, M. Hack, J. Brown, N. Koide, Y. Nagara, Y. Kato and H. Ito, SID 04 DIGEST, 48 (2004).
14. B. W. D’Andrade, R. J. Holmes and S. R. Forrest, Adv. Mater. 16, 624 (2004).
15. J. Kido, T. Matsumoto, T. Nakada, J. Endo, K. Mori, N. Kawamura and A. Yokoi, SID 03 DIGEST, 964 (2003).
16. T. Matsumoto, T. Nakada, J. Endo, K. Mori, N. Kawamura, A.Yokoi and J. Kido, SID 03 DIGEST, 979 (2003).
17. J. Kido, N. Ide, D. Tanaka, Y. Agata and T. Takeda, 2006 MRS Spring Meeting (L3.4) (2005).
18. T. Shiga, S. Tokito and Y. Taga, Proc. 10th of Int. Workshop Inorg. and Org. Electrolumin. (EL’00), 179 (2000).
19. S. Murano, M. Burghart, J. Birnstock, P. Wellmann, M. Vehse, A. Werner, T. Canzler, T. Stübinger, G. He, M.
Pfeiffer, H. Boerner, SPIE Optics & Photonics Conference 5937-19 (2005).
20. M. Horii, Y. Jinde, S. Tanaka, A. Ogawa, Y. Kawakami and Y. Naito, IDW ’04, 1293 (2004).

Proc. of SPIE Vol. 6333 63330M-10

Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 01 Mar 2023

Terms of Use: https://www.spiedigitallibrary.org/terms-of-use