INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42C DESCRIPTION + DC Current Gain -hee = 30(Min)@ Ie=-0.34 + Collector-Emitter Sustaining Voltage- Vezoisus) = -100V(Min) + Complement to Type TIP41C ay 2 + Minimum Lot-to-Lot variations for robust device performance : and reliable operation hth 3 ‘APPLICATIONS 1A" PIN 1. 8ASE + Designed for use in general purpose amplifer and switching | \ | ; oe applications ‘os 70.2206 package ABSOLUTE MAXIMUM RATINGS(T.=25°C) 2 ‘SYMBOL PARAMETER VALUE | UNIT i y Tlie s Vow | eaaordae tye m Heoe Vess | Collector-Emitter Voltage 100] v * " Vero | Emiter-Base Votage s | |iv tt * Collector Current-Continuous 6 A K “gD low | Collector Curent-Peak ao | & y= J -| Sie RI Ip Base Current 2 A = . eleter Pover Disipation el —— = © [Collector Power Dissipation 3 | aan aa Tes25C ‘a [15.50 [15.90 [a 3a 140.20] 7, | Junetion Temperature 160 | C420] 450. [070 [0.90 Tag | Storage Temperature Range se10 | 0 BA [2.68 [2.90 J] 04 0.60. THERMAL CHARACTERISTICS [2.80 [13.40 | 320 [145 SYMBOL PARAMETER max | UNIT ass R280 | 2.70 Rinje | Thermal Resistance,Junetion to Case | 1.92 | CW [1.29 [4.35 U [6.45 | 6.65 Rinja_ | Thermal Resistance, Junction toambient | 625 v bese] 8.86. isc website: www.iscsemi.com 1 isc & iscsemiis registered trademarkINCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42C ELECTRICAL CHARACTERISTICS T<$25C unless otherwise specified SYMBOL PARAMETER CONDITIONS min | Max | UNIT Vozoeus; | Collector Emitter Sustaining Voltage 100 v Collector Emitter Saturation Voltage as} ov Base-Emitter On Voltage 20} v Collector Cutoff Currant 04 | ma Collector Cutoff Current 07 | ma Emitter Cutoff Current Ves -8V. 4.0 | ma DC Current Gain 30 DC Current Gain 3A: Vee= -8V. 1s | 75 fr | Current-Gain—Bandivith Product 3 MHz isc website: www.iscsemi.com isc & iscsemi is registered trademark