Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2534

DESCRIPTION ・
・With TO-220C package
・High collector breakdown voltage
: VCEO=400V(Min)
・Excellent switching time
: tr=1.0μs(Max.)
: tf=1.0μs(Max.

APPLICATIONS
・High speed high voltage switching applications
・Switching regulator applications
・High speed DC-DC converter applications

PINNING

PIN DESCRIPTION

1 Base

R
Collector;connected to
2

T O
mounting base

3 Emitter
导体 D UC
半 N
固电 EM IC O
E S
NG
Absolute maximum ratings(Ta=25℃)

CHA
SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO IN
Collector-base voltage Open emitter 500 V

VCEO Collector-emitter voltage Open base 400 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 2 A

IB Base current 0.5 A

Ta=25℃ 1.5
PC Collector dissipation W
TC=25℃ 20

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2534

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V

V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V

V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V

VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA 1.0 V

VBEsat Base-emitter saturation voltage IC=0.5A; IB=50mA 1.5 V

ICBO Collector cut-off current VCB=400V ;IE=0 100 μA

IEBO Emitter cut-off current VEB=6V; IC=0 1 mA

hFE-1 DC current gain IC=0.1A ; VCE=5V 20

T O R
hFE-2

导
DC current gain
体 IC=0.5A ; VCE=5V

D UC
20

半 N
固电
Switching times

EM IC O
E S
NG
μs

CHA
tr Rise time 1.0

IN
VCC=200V;
tstg Storage time IB1=-IB2=50mA;RL=400Ω 2.5 μs
Duty cycle≤1%
tf Fall time 1.0 μs

2
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2534

PACKAGE OUTLINE

T O R
导体 D UC
半 N
固电 EM IC O
E S
H A NG
IN C

Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

3
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2534

T O R
导体 DUC
半 N
固电 EM IC O
E S
H A NG
IN C