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njw0281 D PDF
njw0281 D PDF
NJW0302G (PNP)
Complementary NPN-PNP
Power Bipolar Transistors
These complementary devices are lower power versions of the
popular NJW3281G and NJW1302G audio output transistors. With
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superior gain linearity and safe operating area performance, these
transistors are ideal for high fidelity audio amplifier output stages and
other linear applications.
15 AMPERES
COMPLEMENTARY SILICON
Features
POWER TRANSISTORS
• Exceptional Safe Operating Area
• NPN/PNP Gain Matching within 10% from 50 mA to 3 A
250 VOLTS, 150 WATTS
• Excellent Gain Linearity
PNP NPN
• High BVCEO
• High Frequency COLLECTOR 2, 4 COLLECTOR 2, 4
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Case RθJC 0.83 °C/W
ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 0.5 A, VCE = 5.0 V) 75 150
(IC = 1.0 A, VCE = 5.0 V) 75 150
(IC = 3.0 A, VCE = 5.0 V) 75 150
Collector−Emitter Saturation Voltage VCE(sat) − 1.0 V
(IC = 5.0 A, IB = 0.5 A)
Base−Emitter On Voltage VBE(on) − 1.2 V
(IC = 5.0 A, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT 30 − MHz
(IC = 1.0 A, VCE = 5.0 V, ftest = 1.0 MHz)
Output Capacitance Cob − 400 pF
(VCB = 10 V, IE = 0, ftest = 1.0 MHz)
160 100
140
IC, COLLECTOR CURRENT (A)
1.0 ms
PD, POWER DISSIPATION (W)
120 10 5.0 ms
100 10 ms
100 ms
80 1
DC
60
40 0.1
20
0 0.01
0 20 40 60 80 100 120 140 160 1 10 100 1000
TC, CASE TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Power Derating Figure 2. Safe Operating Area
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2
NJW0281G (NPN) NJW0302G (PNP)
500 500
VCE = 5.0 V VCE = 5.0 V
hFE, DC CURRENT GAIN
100 100
−25°C
25°C −25°C
25°C
10 10
0.05 0.1 1 10 50 0.05 0.1 1 10 50
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
1.4 2.4
VBE(on), BASE−EMITTER VOLTAGE (V)
0.6
25°C 0.9 −25°C
100°C
0.4
100°C
0.4
0.2
25°C
0 −0.1
0.01 0.1 1 10 100 0.01 0.1 1 10 100
10 10
IC/IB= 10 IC/IB= 10
VCE(sat), COLLECTOR−EMITTER
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1 1
100°C
25°C 100°C
0.1 0.1 25°C
−25°C
−25°C
0.01 0.01
0.01 0.1 1 10 100 0.01 0.1 1 10 100
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 7. NJW0281G Saturation Voltage Figure 8. NJW0302G Saturation Voltage
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3
NJW0281G (NPN) NJW0302G (PNP)
60 70
VCE= 5.0 V VCE= 5.0 V
60
fT, CURRENT GAIN BANDWIDTH
50
40
PRODUCT (MHz)
PRODUCT (MHz)
40
30
30
20
25°C 20 25°C
10 10
0 0
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 9. NJW0281G Current Gain Bandwidth Figure 10. NJW0302G Current Gain Bandwidth
Product Product
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−3P−3LD
CASE 340AB−01
ISSUE A
DATE 30 OCT 2007
NOTES:
A SEATING
PLANE 1. DIMENSIONING AND TOLERANCING PER ASME
B B C Y14.5M, 1994.
Q U 2. CONTROLLING DIMENSION: MILLIMETERS
4 E 3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
SCALE 1:1 4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
A L MILLIMETERS
DIM MIN NOM MAX
A 19.70 19.90 20.10
B 15.40 15.60 15.80
C 4.60 4.80 5.00
D 0.80 1.00 1.20
(3°) E 1.45 1.50 1.65
P K
F 1.80 2.00 2.20
G 5.45 BSC
H 1.20 1.40 1.60
J 0.55 0.60 0.75
1 2 3 K 19.80 20.00 20.20
L 18.50 18.70 18.90
3X D H F P 3.30 3.50 3.70
0.25 M A B S J W Q 3.10 3.20 3.50
U 5.00 REF
W 2.80 3.00 3.20
G G
GENERIC MARKING
DIAGRAM*
STYLE 1: STYLE 2: STYLE 3:
PIN 1. BASE PIN 1. ANODE PIN 1. GATE
2. COLLECTOR 2. CATHODE 2. DRAIN
3. EMITTER 3. ANODE 3. SOURCE
4. COLLECTOR 4. CATHODE 4. DRAIN xxxxxG
AYWW
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