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Space Ch arg e at a Jun ctio n
NA NEGATI VE No POSITIV E
CHARG E CHARG E

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t I
~ SPACE CHARG E _.,.I
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DIFFUS ION I
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Fig. 6.41 Space Charg e Regio11,, Electri c Field and Forces
Acti11g on The Charg ed Carrie rs
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------ J Energy diagram

• Overall, PN junction diode characteristics:

Figure 5- 14 I
1- V characteristic
of a p-n junction.

/ (tliff.)

r /(gen.)
V

t
(5-25)

l = Io(eqV/kT - 1)

When V is negative (reverse bias), the exponential term approaches

zero and the current is - ! 0, which is in the n top (negative) direction. This
nega tive generation current is aJso called the reverse satl/ration current.
Deviations from the simple theory
• A few factors which can affect the operation of
junction devices under special circumstances:

I Effects of contact potential on carrier injection

2 Recon1bination arid generatio11 in the transition region
3 Ohnnc losses
4 Graded junctions
 Effects of contact potential on carrier
injection
• The contact potential limits the ultimate
voltage that will appear across the junction.
- Assumed high level injection (take into
account changes majority carrier concentration)
Pp+~p P =""+ 6n =e"'v.- V)ltT
n

Pn +~P n " r +6n r

• Simple theory will not predict this (eqVlkT)

- Assumed low level injection (neglect changes
majority carrier concentration)
 Recom 1nat1on and generation 10 the
transition region

• Significant recombination and thermal generation

of EH,Ps can occur if the depletion width is
similar in length to L 0 and LP.
- Forward bias: Recombination within W can lower
current and is proportional to ni and forward bias
(e qVtZkl). Recombination within the neutral regions is
proportional to n?INcd or a) and forward bias (e qV/lkT).
- This gives rise to the ideality factor, n.

I= qA( ~: P, + ~: n, )t••w"'T -1)

 Ohmic Loss
• The Ohm ic loss in a diod e is the pow er
dissipated by the equi vale nt serie s resis tanc e of
the device.

• Ohmic losses will become significant when:

- One of the neutral is very lightly doped
- The area is close to the length of the neutr al regio ns.
- Operating at very high currents
• Ohmic losses will reduce current beca use less
voltage is falling across the junc tion
 Graded junctions
• Not all junctions are abrupt
- Drive-in diffusions are linearly graded around
the junction. (Pre-dep diffusions are considered
abrupt.)
C
0
·.:;

Nd-Na=Gx -e
C
Q)
0
C Linear Approximation
0

~
(.)
dE = q (p-1t+NJ + -N
0
- )~ Gx ~
·c:
dx & 5. ---- Nd
E

Distance from the surface

• Capacitance of p-n Junctions
0 There are basically two types of capacitance
associated with a junction:
(1) the junction capacitance or depletion
capacitance due to the dipole in the transition region
and Junctions, it is dominant under reverse-bias
conditions
(2) the charge storage capacitance arising from the
lagging behind of voltage as current changes, due to
charge storage effects, it is dominant when the junction
is forward biased
• The junction capacitance: the uncompensated
acceptor ions on the p side provide a negative
charge, and an equal positive charge results
from the ionized donors on the n side of the
transition region.
Using

C = 1:e1 (5- 55)

W
0- V)(Na
__ [ 2E(V
·
+ Nd)]l/2 (with bias)
q NaNd

We obtain the following:

q NrlNa ] ' 12 EA
Cf = EA [ 2E( V0 - V) Nd + N0 = W (5-62)
 ,
I
I

Reverse Forward voltage

Figure 5-30
Depletion capacitance of a junction: w ith. variation of reve_rse bias
 Time Variation of Stored
~h!Jrrto
5. 1. Time Variation of Stored Charge
Carrier distribution of stored charges after recombination
Store d charges are
0 (f) dO V)
reco111billatio11 ,.,itlt electro11s LaplaceTrnnfonuation : i(t) = .=.!!....__ + -P
'p dr
i(T > 0) = 0, QP (0) =IrP
(ii) 1
Q,, ( I) lip
0= ~QP (s)+ sQP(s)- Jrp
•p

llp,. 1-:
I = 0
0 ( s)= P
Increasing -P s+ l l rP

- p ('
: . 0
) = I 'p(? -11,,,

0 0

(h ) Cc)
Fig. 27. Effects of a step turn-off transient in ap+-11 diode: (a) current through the diode; (b)
decay of stored charge in the 11-region; (c) excess hole distribution in the 11-region as a
function of time during the transient.

Solid State Electronic Devic es

Consider a p+n diode (Qp >> Qn):

i(t)

cm·rent with time

ts
t, =~ 1n(1+ ~: J
P
t

VA(t)
voltage across diode
with time

• t
ts!