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Fermi Dirac Distribution


Function
Last updated October 26, 2020 by Electrical4U

Distribution functions are nothing but the


probability density functions used to
describe the probability with which a
particular particle can occupy a particular
energy level. When we speak of Fermi-
Dirac distribution function, we are
particularly interested in knowing the
chance by which we can find a fermion in
a particular energy state of an atom (more
information on this can be found in the
article “Atomic Energy States”). Here, by
fermions, we mean the electrons of an
atom which are the particles with ½ spin,
bound to Pauli exclusion principle.

Necessity of Fermi Dirac


Distribution Function
In fields like electronics, one particular
factor which is of prime importance is the
conductivity of materials. This
characteristic of the material is brought
about the number of electrons which are
free within the material to conduct
electricity.

As per energy band theory (refer to the


article “Energy Bands in Crystals” for
more information), these are the number
of electrons which constitute the
conduction band of the material
considered. Thus inorder to have an idea
over the conduction mechanism, it is
necessary to know the concentration of
the carriers in the conduction band.

Fermi Dirac Distribution


Expression
Mathematically the probability of finding
an electron in the energy state E at the
temperature T is expressed as

Where,

is the Boltzmann constant


T is the absolute temperature
Ef is the Fermi level or the Fermi energy

Now, let us try to understand the


meaning of Fermi level. In order to
accomplish this, put

in equation (1). By doing so, we get,

This means the Fermi level is the level at


which one can expect the electron to be
present exactly 50% of the time.

Fermi Level in Semiconductors

Intrinsic semiconductors are the pure


semiconductors which have no
impurities in them. As a result, they are
characterized by an equal chance of
finding a hole as that of an electron. This
inturn implies that they have the Fermi-
level exactly in between the conduction
and the valence bands as shown by
Figure 1a.

Next, consider the case of an n-type


semiconductor. Here, one can expect
more number of electrons to be present in
comparison to the holes. This means that
there is a greater chance of finding an
electron near to the conduction band than
that of finding a hole in the valence band.
Thus, these materials have their Fermi-
level located nearer to conduction band
as shown by Figure 1b.
Following on the same grounds, one can
expect the Fermi-level in the case of p-
type semiconductors to be present near
the valence band (Figure 1c). This is
because, these materials lack electrons i.e.
they have more number of holes which
makes the probability of finding a hole in
the valence band more in comparison to
that of finding an electron in the
conduction band.

Effect of temperature on
Fermi-Dirac Distribution
Function

At T = 0 K, the electrons will have low


energy and thus occupy lower energy
states. The highest energy state among
these occupied states is referred to as
Fermi-level. This inturn means that no
energy states which lie above the Fermi-
level are occupied by electrons. Thus we
have a step function defining the Fermi-
Dirac distribution function as shown by
the black curve in Figure 2.
However as the temperature increases,
the electrons gain more and more energy
due to which they can even rise to the
conduction band. Thus at higher
temperatures, one cannot clearly
distinguish between the occupied and the
unoccupied states as indicated by the
blue and the red curves shown in Figure
2.

  

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