VOLUME 18, NUMBER 23 PHYSICAL REVIEW
i s e to give detailed information on the conduc-
t i o n - e l e c t r o n spin-flip c o r r e l a t i o n time in the
ground state and will be c o n s i d e r e d in detail
in a subsequent publication.
We would like to thank D r . M. D. Daybell and
D r . W. A. Steyert for communication of t h e i r
r e s u l t s p r i o r to publication; P r o f e s s o r J . R.
Schrieffer for continued i n t e r e s t in t h e s e e x p e r -
i m e n t s ; and P r o f e s s o r P . P i n c u s for s e v e r a l
helpful d i s c u s s i o n s . We also thank M r . T o m
Lake for m e a s u r i n g the r e s i s t i v i t y r a t i o of the
Cu:Fe s a m p l e . P r o f e s s o r K. Yosida kindly
supplied u s with a p r e p r i n t of h i s s u s c e p t i b i l -
ity calculation p r i o r to publication.
*A contribution from the Laboratory for Research on
the Structure of Matter, University of Pennsylvania.
Work supported by the Advanced Research Projects
Agency; the Air Force Office of Scientific Research,
Office of Aerospace Research, U. S. Air Force, under
Grant No. AF-AFOSR-1149-66; and the National Sci-
ence Foundation under Grant No. NSF GP4178.
1
J. Kondo, Progr. Theoret. Phys. (Kyoto) 32, 37
(1964).
2
P. W. Anderson, J. Appl. Phys. 37, 1194 (1966).
Y. Nagaoka, Phys. Rev. 138, A1112 (1965); Progr.
Theoret. Phys. (Kyoto) 37, 13 (1967). K. Yosida,
Progr. Theoret. Phys. (Kyoto) 36, 875 (1966). F. Taka-
no and T. Ogawa, Progr. Theoret. Phys. (Kyoto) 3j5,
343 (1966). J. R. Schrieffer, J. Appl. Phys. 3_8, 1143
(1967). J. Kondo, Progr. Theoret. Phys. (Kyoto) 36>,
429 (1966).
3 16
A. J. Heeger and M. A. Jensen, Phys. Rev. Letters
18, 488 (1967).
4 as worked out by H. Suhl and D. Wong, Physics 3*, 17
G. J. Van den Berg, in Proceedings of the Ninth In-
ternational Conference on Low Temperature Physics,
RELAXATION AND RECOMBINATION TIMES OF QUASIPARTICLES
IN SUPERCONDUCTING Al THIN FILMS
B a r r y I. Miller and Aly H. Day em
Bell Telephone Laboratories, Murray Hill, New Jersey
(Received 14 April 1967)
Recently 1 t h e r e h a s been c o n s i d e r a b l e i n t e r -
e s t in the decay of excited q u a s i p a r t i c l e s in
s u p e r c o n d u c t o r s . It h a s been conjectured 1 that
an excited q u a s i p a r t i c l e of energy E decays
v i a a t w o - s t e p p r o c e s s . The f i r s t c o n s i s t s of
a r e l a x a t i o n in t i m e rT to energy A, w h e r e
2A i s the energy gap of the s u p e r c o n d u c t o r .
This p r o c e s s o c c u r s p r i m a r i l y by e m i s s i o n
of a phonon of energy £ - A . 2 > 3 The second s t e p
i s r e c o m b i n a t i o n in t i m e rR of two q u a s i p a r -
t i c l e s at energy A to form a Cooper p a i r and
1000
LETTERS 5 JUNE 1967
edited by J. G. Daunt, D. O. Edwards, F. J. Milford,
and M. Yaqub (Plenum Press, New York, 1965), p. 933;
G. Knapp, J. Appl. Phys. 38, 1267 (1967); M. D. Day-
bell and W. A. Steyert, Phys. Rev. Letters 18, 398
(1967).
5
M. A. Ruderman and C. Kittel, Phys. Rev. 96, 99
(1954); T. Kasuya, Progr. Theoret. Phys. (Kyoto) Jj>,
45 (1956); K. Yosida, Phys. Rev. 106, 893 (1957).
6
Note that there is a correlated spin density within a
coherence length of the impurity but this spin density,
being part of the singlet, is flipping quantum mechani-
cally at a high frequency and will not contribute to the
Cu nmr linewidth. We also note that the spatial spin
correlation found from the variational solution of Ref. 3
is identical with those found by Nagaoka (Ref. 2) and by
Takano and Ogawa (Ref. 2).
7
H. Suhl, Solid State Commun. 4, 487 (1966).
8
J. Owen, M. Brown, W. D. Knight, and C. Kittel,
Phys. Rev. 102, 1501 (1956); T. Sugarawa, J. Phys.
Soc. (Japan) 14, 643 (1959).
9
J. Friedel, Metallic Solid Solutions (W. A. Benjamin,
Inc., New York, 1963), Chap. XIX.
10
Takano and Ogawa, Ref. 2; A. J. Heeger and M. A.
Jenson, to be published; K. Yosida and H. Ishii, to be
published.
U
J. P. Franck, F. D. Manchester, and D. L. Martin,
Proc. Roy. Soc. (London) A263, 499 (1961).
12
G. White, Can. J. Phys. 33, 119 (1955).
13
M. W. Klein and R. Brout, Phys. Rev. 132, 2412
(1963).
14
J. A. Cureaga, B. Dreyfus, R. Tournier, and
L. Weil, in Proceedings of the Tenth International Con-
ference on Low Temperature Physics (to be published).
15
P. W. Anderson, Phys. Rev. 124, 41 (1961).
It should be noted that the resistivity results are
also in agreement with the resonant-scattering theory
(1967); H. Suhl, Phys. Rev. Letters JL8, 743 (1967).
i s accompanied by the e m i s s i o n of a phonon
of energy 2A.4>5
We have m e a s u r e d for the f i r s t t i m e r ^ in
thin aluminum films at 0.37°K and find that
Tj d e c r e a s e s exponentially a s a function of
( £ - A ) / A and is - 0 . 5 X 1 0 " 8 s e c at ( £ - A ) / A = 1.0.
We have a l s o m e a s u r e d r ^ a s a function of
t e m p e r a t u r e and find that at 0.37°K, r ^ ~ 1.0
x 10~ 6 s e c and that it d e c r e a s e s with i n c r e a s -
ing t e m p e r a t u r e up to T ~ 1.2°K. At t e m p e r a -
t u r e s above 1.2°K,6 rR a p p e a r s to i n c r e a s e
VOLUME 18, NUMBER 23 PHYSICAL REVIEW LETTERS 5 JUNE 1967

In Fig. 2 we show a series of I-V curves tak-

FIG. 1. Sample geometry.
slightly.
The measurements were performed on two
superimposed superconducting tunnel diodes
(Al/Al 2 0 3 /Al/Al 2 0 3 /In in the present case)
formed by the successive evaporation of three
film stripes as shown in Fig. 1. Care was tak-
en to insure that the top and bottom stripes
were not in contact. The Al/Al 2 O s /Al diode
(diode 1) is biased such that quasiparticles
are injected into the center aluminum stripe
and, depending on the relaxation and recombi-
nation times, causes an increase in the steady-
state quasiparticle distribution in the center
film. This new distribution is probed by the
second diode (Al/Al 2 0 3 /In) and shows up on
its I-V characteristic. 7 In order to obtain a
measurable change in the I-V curve due to in-
jection, it is necessary to make the center
stripe as thin as possible.
en on diode 2 at 0.37°K for various voltages
on diode 1. Here Ax = 0.221 mV and A2 = 0.571
mV. We note that for F 1 = 2A1 (curves 0 to 10)
all the curves are similar to one another. For
these biases on diode 1 all the injected quasi-
particles are at E ~ Ax and the change in the
quasiparticle population is proportional to TR.
At biases where Vx>2AX we note that in the
region F 2 <A 2 -A 1 each curve deviates from
i s
* predecessor, in contrast to the similarity
between the curves obtained at F 1 = 2A1. These
deviations occur for the following reason. The
injected quasiparticles are now in the energy
range A1<E<V1-AX. Because of the singular-
ities in the quasiparticle density of states in
the Al films, the injected quasiparticle distri-
bution will have one singularity at E = Vx-Ax
and another at E = A r The singularity at E = Vx
-Ax should, according to theory, produce a
jump in the current I2 at V2= VT = A1 + A2-VV
The height of this jump should be proportion-
al to rT(E). Experimentally this jump is round-
ed off and shows up as a deviation between the
successive curves depicted in Fig. 2. The round-
ing off of the current jump is probably due to
thermalization and the finite width of the In
gap edge (30 /iV).
In order to evaluate r^ we consider only those
curves corresponding to injection at F 1 = 2A1.
For a given injection current I19 the number
of excited quasiparticles tunneling into the mid-
dle stripe is not proportional to Iv but rather

V.,(nnV) I^mA)
0 0 0
2 2A 0.2
4 2A 0.4
6 2A 0.6
8 2A 0.8
10 2A +0.091A 1.0
12 2A +0.140A 1.2
14 2A +0.348A 1.4
16 2A +0.584A 1.6
18 2A +0.835A 1.8
20 2A + 1.040A 2.0

V2 (MICROVOLTS)

FIG. 2. I-V curve for diode 2 (Al/Al 2 0 3 /In) for different values of injection biases on diode 1 at 0.37°K. V? is
indicated for curve 14.
1001
VOLUME 18, NUMBER 23 PHYSICAL REVIEW LETTERS 5 JUNE 1967

to (Ix-I±°), w h e r e Ij° i s the contribution of t h e r - bination time i s given by

mally excited p a r t i c l e s . R e f e r r i n g to the s e m i -
A1ev(l)AI2(VR)
conductor model of excitations in a s u p e r c o n -
(1)
ductor, one can easily find that the c u r r e n t R A12 lAC^-IJ >
due to t h e r m a l l y excited p a r t i c l e s i s composed
w h e r e AfyiVft) i s the change of I2 c o r r e s p o n d -
of two equal p a r t s , one c r e a t i n g and the other
ing to a given injection c u r r e n t It; v(l) and^4 x
d e s t r o y i n g an equal n u m b e r of excited q u a s i -
a r e the volume and a r e a , r e s p e c t i v e l y , of the
p a r t i c l e s in the middle film. We a s s u m e , t h e r e -
second s t r i p e common to diode 1; A12 i s the
fore, that at F 1 = 2A 1 a l l the injected q u a s i p a r -
a r e a of the c e n t e r s t r i p e common to diodes
t i c l e s lie in a n a r r o w energy band at the top
1 and 2 (see F i g . 1); and C = v2(oo)/2eN1(0) is
of the Al gap. In the steady state the change
a constant for a given diode. H e r e a2(°°) i s the
in the c u r r e n t I2 at any b i a s F 2 ^ A 2 - A 1 i s p r o -
conductivity of diode 2 in the high-voltage l i m -
portional to T^il^Ij0). B e c a u s e of the i n s t a - it, and 2 ^ ( 0 ) = 3.33X10 22 eV""1 c m " 3 i s the n o r -
bility n e a r the negative r e s i s t a n c e region we m a l density of s t a t e s for both spins in Al. 8 In
choose a fixed b i a s F 2 = 0.6 mV which l i e s at our c a s e C = 1.97xl0~ 2 4 C s e c ^ 1 c m 3 for the
a stable point in the t e m p e r a t u r e range of i n - diode used in r u n 12.
t e r e s t . At this b i a s the q u a s i p a r t i c l e s n e a r
In o r d e r to obtain r^{E) it i s n e c e s s a r y to
the top of the Al gap tunnel to the In film into
compute the jump in c u r r e n t I2 expected at F 2
a fairly constant density of s t a t e s whose v a l -
= F ^ = A^ + A 2 - F ^ and then c o m p a r e with the
ue is 1.4 t i m e s the n o r m a l state density. With
e x p e r i m e n t a l jump. F r o m tunneling theory 9
t h i s in mind it i s easy to show that the r e c o m -
one finds that the jump in c u r r e n t i s p r o p o r t i o n -
al to

1 1 fFi-e (E-V^E
[E-V^E + V^dE
+ V^dE V
K11--A
A11 71
W= lim

If we denote the m e a s u r e d i n c r e m e n t in c u r r e n t
at VT = A2 + A1-Vi by AI2(VT) then which gives a much s t r o n g e r t e m p e r a t u r e d e -
pendence than that indicated in Fig. 3(a). We
AI^V^N^vd) Ax
find that for A / k T > 3, rR~exp(0.3A/£T). At
r (V - A ) (2)
Wo i H a ^ o o ) A12 p r e s e n t we a r e unable to account for this d i s -
crepancy.
Since we a r e i n t e r e s t e d in the s t e a d y - s t a t e
In F i g . 3(b) we plot rT v s ( E - A 1 ) / A 1 at 0.37°K.
population at E = V1-A1 due to the r e l a x a t i o n
We find that r T ( E - A ) = l . l l x l O " 7 e x p [ ~ 3 . 3 4 ( E
from E = F 1 ~A 1 , any e x c e s s population from
- A ) / A ] . The fact that rT i s at l e a s t an o r d e r
t h e r m a l t a i l s extending up from e n e r g i e s E < Vx
of magnitude l e s s than Tn m e a n s that all inject-
- A 1 m u s t be taken out. We find that the best
ed q u a s i p a r t i c l e s f i r s t r e l a x to the top of the
way to achieve this i s to take A^iVj) a s the
gap and then r e c o m b i n e a s d i s c u s s e d e a r l i e r .
difference in c u r r e n t at Vrp between the given
In the p r e s e n t e x p e r i m e n t it i s difficult to m e a -
curve and i t s p r e d e c e s s o r , the l a t t e r c u r r e n t
s u r e TT a s a function of t e m p e r a t u r e b e c a u s e
being n e a r l y equivalent to the t h e r m a l tail o r i g -
inating from e n e r g i e s E< 7 1 - A 1 . of the l a r g e t h e r m a l q u a s i p a r t i c l e population
at higher t e m p e r a t u r e s .
In F i g . 3(a) r ff i s plotted a s a function of t e m -
Several f a c t o r s have to be taken into account
p e r a t u r e . r ^ w a s d e t e r m i n e d by plotting A ^ ^ )
in d e t e r m i n i n g T ^ and r^ by the p r e s e n t m e t h -
v s Ix a t v a r i o u s t e m p e r a t u r e s and taking the
od. These a r e (1) heating of the diode by the
slope of this curve a s (I^Ij0) goes to 0. Thus
we obtain the dependence of Tp on t e m p e r a t u r e dc power input, (2) diffusion of the q u a s i p a r -
in the limit of z e r o injection. The t e m p e r a t u r e t i c l e s away from the common a r e a of the diode,
dependence of r ^ h a s been calculated by Schrief- and (3) l o s s of excited q u a s i p a r t i c l e s in the
fer who finds that for A/kT» 1 c e n t e r film due to s t r a i g h t through tunneling 1 0
w h e r e an injected q u a s i p a r t i c l e t r a v e r s e s the
r ~(A/£T)1/2exp(A/£T), second film and tunnels d i r e c t l y into the top
H

1002
V O L U M E 18, N U M B E R 23 PHYSICAL REVIEW LETTERS 5 JUNE 1967

1 1 1 1 than the width of the s t r i p e s . Diffusion e r r o r s

IT]
8 • RUN 12 a r e thus only about 10%. The s t r a i g h t - t h r o u g h
o RUN 13
6 tunneling p r o c e s s will give r i s e to an e x c e s s
c u r r e n t I0 in addition to I2 and m a k e s rR ; and
4 (a) •{ rT appear l a r g e r . We find that I2r/I2< 10~ 5 .
3
i The o v e r - a l l absolute e r r o r s in m e a s u r i n g
TR and Tj, a r e about 30% and come mainly from
e r r o r in m e a s u r i n g film t h i c k n e s s . We a l s o
H
studied the v a r i a t i o n of A^iV^) o v e r a wide
r a n g e of injection c u r r e n t Ix at v a r i o u s t e m p e r -
a t u r e s . The c u r v e s obtained have a n u m b e r
icr7
of i n t e r e s t i n g f e a t u r e s which will be d e s c r i b e d
8
in a l a t e r publication. Among t h e s e f e a t u r e s
i i 1
6 i 1 1 1 1 1
we find the following: (1) &I2(VR) = ° f o r h"1i°
A/kT < 0 showing that indeed the c u r r e n t from t h e r -
mally excited q u a s i p a r t i c l e s does not produce
6 - \ net excitations in the middle film. (2) F o r the
4
- r a n g e of v a l u e s of Ix at F 1 ~ 2 A 1 , the behavior
\
of AiV^t 7 ^) is such as to show c l e a r l y the d e -
2
\ c r e a s e of TR with i n c r e a s i n g steady state q u a -
s i p a r t i c l e population. This is p a r t i c u l a r l y p r o m
10"8 - \ inent at low t e m p e r a t u r e s w h e r e the original
„ 8 t h e r m a l population is r e l a t i v e l y s m a l l .
16 \ In conclusion, we have developed a method
by which we have m e a s u r e d rR and T™ a s a
4
(b) \ function of t e m p e r a t u r e and energy, r e s p e c t i v e -
-
ly. In addition to this we a r e able to m e a s u r e
2 the dependence of 7v> on q u a s i p a r t i c l e density
\ at a given t e m p e r a t u r e and the energy profile
of the excited q u a s i p a r t i c l e s . By using t h e s e
10"» .. „ 1 1. I 1 1
techniques we a r e b e t t e r able to u n d e r s t a n d
the q u a s i p a r t i c l e r e l a x a t i o n and r e c o m b i n a t i o n
p r o c e s s e s in s u p e r c o n d u c t o r s . In the future
FIG. 3. (a) Plot of TR vsA/kT. T h e indicated e r -
we plan a further study of Al a s well a s other
r o r s a r e r e l a t i v e e r r o r s only, (b) Plot of TJ« VS ( E ~ A ) /
A at 0.37°K. T h e indicated e r r o r s a r e r e l a t i v e only. s u p e r c o n d u c t o r s using t h e s e t e c h n i q u e s .
We wish to thank S. J . Buchsbaum, P . K.
Tien, P. W. Anderson, W. L. McMillan, and
film (In). Heating will c a u s e the total n u m b e r B. N. Taylor for many valuable d i s c u s s i o n s ;
of q u a s i p a r t i c l e s to r i s e and will thus cause a l s o W. R. Wolff, J . J . Wiegand, and M r s . A A.
Tft and rT to a p p e a r l a r g e r than they a r e . A P r i t c h a r d for technical a s s i s t a n c e . We a l s o
s e r i e s of m e a s u r e m e n t s w e r e made on the r i s e wish to thank B . N . Taylor for a copy of his
in t e m p e r a t u r e of the middle film a s a function unpublished t h e s i s .
of injected power by noting the change of the
Al e n e r g y gap, a s m e a s u r e d by diode 1, a s
*W. E i s e n m e n g e r and A. H. Dayem, P h y s . Rev. L e t -
a function of input power from diode 2. In this t e r s 1 8 , 125 (1967).
way we w e r e able to e s t i m a t e the heat r i s e of 2
J . B a r d e e n , G. Rickayzen, and L. T e w o r d t , P h y s .
the middle film and we find that any e r r o r i n - Rev. JL13, 982 (1959).
3
troduced by heating is l e s s than 10% at the i n - L . Tewordt, P h y s . Rev. 127, 371 (1962); 128, 12
jection levels used in d e t e r m i n i n g rR and r ^ . (1962).
4
Diffusion will r e d u c e the number of q u a s i p a r - J. R. Schrieffer and D. M. G i n s b e r g , P h y s . Rev. L e t -
t e r s 13, 204 (1962); D. M. G i n s b e r g , P h y s . Rev. L e t t e r s
t i c l e s p r e s e n t and thus cause rR and rT to a p -
_8, 207 (1962).
p e a r s m a l l e r than they a r e . We find the dif- 5
It i s also possible for the r e c o m b i n a t i o n to o c c u r via
fusion length of q u a s i p a r t i c l e s in the middle photon e m i s s i o n . E. B u r s t e i n , D. N. Langenberg, and
film to be about 2 x i 0 ~ 3 cm, much s m a l l e r B. N. T a y l o r [Phys. Rev. L e t t e r s (B, 92 (1961)] have

1003
V O L U M E 18, N U M B E R 23 PHYSICAL REVIEW LETTERS 5 JUNE 1967

shown that photon e m i s s i o n lifetime ~0.4 s e c in Pb ' T h i s i s the s a m e method u s e d by B. T a y l o r to m e a -

which i s much s m a l l e r than t h e phonon lifetime ~ 1 0 ~ 7 s u r e r e c o m b i n a t i o n t i m e s in Al. B . T a y l o r , t h e s i s ,
s e c (see Ref. 4). University of Pennsylvania, 1962 (unpublished).
6 8
T h e t r a n s i t i o n t e m p e r a t u r e for t h e s e films was T . P . Sheenen, P h y s . Rev. 149, 370 (1966).
9
~1.45°K. We find that 2A(0)/kTc ~ 3.5. See B. A b e l e s , I. Giaever and K. M e g e r l e , P h y s . Rev. 122, 1101
R. W. Cohen, and G. W. Cullen, P h y s . Rev. L e t t e r s JL7, (1961).
10
631 (1966). B. N. T a y l o r , P r i v a t e communication.

H O T - E L E C T R O N - P H O N O N I N T E R A C T I O N S IN G a P

E . M. C o n w e l l
Bayside Laboratory,
R e s e a r c h C e n t e r of General Telephone & E l e c t r o n i c s L a b o r a t o r i e s I n c o r p o r a t e d ,
B a y s i d e , New York
(Received 24 A p r i l 1967)

In a r e c e n t L e t t e r , W i l l i a m s and Simon 1 c l a i m only important s c a t t e r i n g p r o c e s s , even in r e l -

to have d e t e r m i n e d by d i r e c t m e a s u r e m e n t the
m e a n free path for e n e r g y l o s s to phonons of
e n e r g e t i c e l e c t r o n s in G a P . The mean free
path they obtain i s , however, of questionable
significance since it i s based on a g r e a t l y o v e r -
simplified view of h o t - e l e c t r o n t r a n s p o r t in
this m a t e r i a l . T h i s i s t r u e also of p r e v i o u s
d e t e r m i n a t i o n s of t h i s m e a n free path. 2
It i s a s s u m e d by W i l l i a m s and Simon that
the e n e r g y l o s s p e r collision i s 0.050 eV, the
longitudinal optical (LO) phonon energy at the
c e n t e r of the Brillouin zone. 3 This type of p h o -
non may well be predominant for l o s s e s of low-
e n e r g y e l e c t r o n s . P o l a r optical s c a t t e r i n g i s
known to be important at low fields in GaP at
room t e m p e r a t u r e . 4 ' 5 It i s not, however, the
atively p u r e m a t e r i a l , since the mobility c a l -
culated for this m e c h a n i s m i s g r e a t e r than the
o b s e r v e d mobility. 4 ' 5 It h a s been speculated
that acoustic deformation-potential s c a t t e r i n g
i s the other p r o c e s s of i m p o r t a n c e , 5 but it could
well be that that p r o c e s s i s s c a t t e r i n g among
the equivalent (100) v a l l e y s . The l a t t e r i s the
predominant s c a t t e r i n g p r o c e s s for the (100)
m i n i m a in silicon. In support of this hypoth-
e s i s , Epstein 6 notes that the Hall mobility at
300° and above shows a somewhat s t r o n g e r
t e m p e r a t u r e dependence than could be a c c o u n t -
ed for by a combination of polar and i n t r a v a l -
ley a c o u s t i c - m o d e s c a t t e r i n g .
The r a t e of e n e r g y l o s s of an e l e c t r o n of e n -
e r g y & to polar modes i s 7

dS
AN + i)cosh-1L -N - s i n n " 1 '
IF
po
(2mS)1/2 L ql
7
\K(JQ, ql \#a>, a)
w h e r e e i s the e l e c t r o n i c c h a r g e ; ooi and Nqi the angular frequency and number, r e s p e c t i v e l y , of
LO phonons; and E0 an effective field whose magnitude i s a m e a s u r e of the coupling to the LO p h o -
n o n s . If (1) i s plotted v e r s u s 5 , it is found that for the slowest e l e c t r o n s (dS/dt)^o>0, indicating
net gain. A s S i n c r e a s e s , (dS/dt)„Q b e c o m e s negative and its magnitude i n c r e a s e s . The magnitude
of the l o s s r a t e r e a c h e s a m a x i m u m and then d e c r e a s e s a s S i n c r e a s e s further, eventually a s ln8/8l/z.
F o r G a P t h i s m a x i m u m i s r e a c h e d at S -AHu>i or 0.2 eV. The r a t e of l o s s of e l e c t r o n s in the itti
valley due to i n t e r v a l l e y s c a t t e r i n g i s given by 8

2
dS\ D. (m .) 3 / 2
(2)
It). ~LJ 21/2TIF
T?rp
2
' L
qij ij 0j qtj ij Oj
J
w h e r e the sum i s taken over all possible final v a l l e y s ; D^ and a># "ij a r e the coupling constant and a n -
gular frequency, r e s p e c t i v e l y , for the t r a n s i t i o n i^j; Nqij is the number of phonons with angular

1004