Journal of Physics and Chemistry of Solids 115 (2018) 283–288

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Journal of Physics and Chemistry of Solids

journal homepage: www.elsevier.com/locate/jpcs

Current transport and capacitance–voltage characteristics of an

n-PbTe/p-GaP heterojunction prepared using the electron beam
deposition technique
Mahmoud Nasr a, I.M. El Radaf b, A.M. Mansour a, *
a
Solid State Physics Department, Physical Research Division, National Research Centre, 33 El-Bohouth St., Dokki, Giza, 12622, Egypt
b
Electron Microscope and Thin Films Department, Physical Research Division, National Research Centre, 33 El-Bohouth St., Dokki, Giza, 12622, Egypt

A R T I C L E I N F O A B S T R A C T

Keywords: In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition
Capacitance–voltage technique. The structural properties of the prepared heterojunction were examined by X-ray diffraction and
Current–voltage scanning electron microscopy. The dark current–voltage characteristics of the heterojunction were investigated at
Electron beam different temperatures ranging from 298 to 398 K. The rectification factor, series resistance, shunt resistance,
GaP diode ideality factor, and effective barrier height (ϕb ) were determined. The photovoltaic parameters were
Heterojunction
identified based on the current density–voltage characteristics under illumination. The capacitance–voltage
PbTe
Photovoltaic
characteristics showed that the junction was abrupt in nature.

1. Introduction power, thereby allowing it to be used in thermoelectric, optical, and

At present, electronic and optoelectronic manufacturing are major
commercial application areas in the thin-film semiconductors industry.
IV–VI semiconductors are highly desirable materials for use in many
electronic devices, such as infrared sensors and resources [1,2], ther-
moelectric converters [3,4], solar cells [5,6], memory devices [7,8],
spintronic [9,10], and other applications [11]. The most important fea-
tures of these materials are their narrow band gap, high dielectric
permittivity, radiation hardness, large carrier mobility, and large bond
ionicity, which make them excellent semiconductors. The
rocksalt-structure IV–VI semiconductor compounds such as PbTe have
small band gaps, high dielectric constants, and a variety of thermody-
namic, electronic, and infrared properties [12]. In fact, PbTe was one of
the earliest compounds to be tested as a semiconductor in the middle of
the 20th century [4]. In addition, electronics devices containing lead and
tin are inexpensive, abundant in nature, and they have relatively low
toxicity. Lead telluride (PbTe) is one of the most important IV–VI group
semiconductors and it has attracted much attention in recent years due to
its important applications in infrared photodetectors [13–15], laser di-
odes [16], thermoelectric devices [17,18], and photovoltaic devices [19,
20]. PbTe has good photoconducting properties and high thermoelectric
photovoltaic applications.
Various methods and substrates have been utilized to prepare PbTe
thin films and junctions, such as thermal evaporation [21], radio fre-
quency magnetron sputtering [22], pulsed laser evaporation [23], elec-
trodeposition [24], chemical bath deposition [25], hot-wall epitaxy [26],
chemical vapor deposition [27] molecular beam epitaxy [28], liquid
phase epitaxy [29], and flash evaporation [30]. Several compounds have
been used as substrates for synthesizing PbTe junctions, including Si
[31–33], Ge [34], GaAs [35], aluminum oxide [36], indium [37], SnO2
[24], and Cu [24]. However, to the best of our knowledge, there have
been no previous reports of the growth of PbTe using the electron beam
deposition (EBD) technique on GaP as a substrate.
In the present study, we synthesized a PbTe/GaP heterostructure
using the EBD technique, which is an inexpensive method for creating
features with different sizes, shapes, and materials at the submicron or
nanometer scale [38,39]. The structural characteristics of PbTe film such
as the crystallinity and morphological characteristics were analyzed
using X-ray diffraction (XRD) and scanning electron microscopy (SEM),
respectively. In order to obtain a better understanding of the interface in
the n-PbTe/p-GaP heterojunction prepared using the EBD technique, we
measured the current–voltage (I–V), and capacitance–voltage (C–V)

* Corresponding author.
E-mail address: amamansour@gmail.com (A.M. Mansour).

https://doi.org/10.1016/j.jpcs.2017.12.029
Received 24 May 2017; Received in revised form 18 December 2017; Accepted 19 December 2017
Available online 19 December 2017
0022-3697/© 2017 Elsevier Ltd. All rights reserved.
M. Nasr et al. Journal of Physics and Chemistry of Solids 115 (2018) 283–288

Fig. 1. Schematic diagram of the Au/n-PbTe/p-GaP/Al heterojunction device and the electron beam deposition technique.

Fig. 3. Scanning electron microscopy (SEM) micrograph of the PbTe thin film deposited
on the GaP substrate.

Fig. 2. X-ray diffraction patterns obtained for the PbTe thin film deposited on the
GaP substrate. A grid-shaped gold (Au) electrode (~400 nm) was thermally evapo-
rated onto the PbTe film through a suitable mask to form a front ohmic
electrode, and an aluminum (Al) layer (~400 nm) was also evaporated
characteristics in the dark at different temperatures. In addition, the
onto GaP as a back electrode, thereby forming an Au/PbTe/GaP/Al
current density–voltage characteristics were determined under illumi-
heterojunction. The area of the Au grid electrode was 0.4 cm2 and the
nation to understand the effects of light on the prepared heterojunction.
area of the manufactured heterojunction was 1 cm2. The device and the
preparation technique are shown in Fig. 1.
2. Experimental techniques
XRD (Philips X'pert) with Cu-Kα radiation was performed to investi-
gate the structural characteristics of the PbTe film. The surface
Pure n-PbTe (99.99% Aldrich Chemicals Company, USA) thin films
morphology of the prepared film was characterized by SEM (Quanta FEG
were deposited with the EBD technique under 8
106 mbar on pre-
250).
cleaned p-GaP substrates ((001) orientation, 0.45 mm thickness, and
The I–V characteristics of the n-PbTe/P-GaP heterojunction were
1.9
101 Ω:cm resistivity), which were held at room temperature (~
recorded using high impedance electrometers (Keithley 614).
303 K), using an electron beam gun evaporation system (Leybold-Her-
The dark C–V characteristics were measured at 5 MHz using a
aeus Combitron CM-30, Germany). The film thickness was monitored
computerized C–V system comprising a 410 C–V meter via a model
with a digital quartz thickness monitor (Type Edward model FTM5,
4108 C–V interface, Hioki, Japan.
Edwards, England) at ~562 nm.

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polycrystalline in nature. Comparisons of the observed reflection planes

with the standard diffraction data file (JCPDF card No. 78–1905) indi-
cated that the planes corresponded to the cubic crystal structure of the
PbTe phase.
The surface morphology of the PbTe film deposited on GaP was
studied by SEM and Fig. 3 shows an SEM micrograph of the as-prepared
film, where a continuous matrix covered the substrate in which the mi-
croparticles were embedded. The particles had various shapes ranging
among cubic shapes with sizes ranging from about 380 to 550 nm and
granules with different shapes, where the particles were highly homo-
geneous. These results confirmed those obtained by XRD.

3.2. I–V characteristics of the PbTe/GaP heterojunction

Fig. 4 shows the I–V characteristics of the n-PbTe/p-GaP hetero-

juncations studied at different temperatures ranging from 298 to 398 K,
which indicates that the forward current was higher than that in the
reverse direction, thereby demonstrating the rectifying nature of the
prepared junction. The rectification factor (RF) can be expressed as the
ratio of the forward current relative to the reverse current at a certain
Fig. 4. I–V characteristics of the Au/n-PbTe/p-GaP/Al heterojunction at different tem-
applied voltage [40,41]. The RF values for the n-PbTe/p-GaP junction are
peratures in the dark. listed in Table 1. The dependence of the RF values on the temperature is
shown in Table 1, which indicates that the RF decreased as the temper-
ature increased.
Table 1 The I–V characteristics are described by the thermionic emission
Junction parameters determined based on the I–V characteristics of the Au/n-PbTe/p-GaP/
theory [42].
Al heterojunction in the dark.
 
T (K) RF(at  1) n RS ðk:ΩÞ Rsh ðk:ΩÞ ϕb ðevÞ qV
I ¼ I e nKT  1 (1)
298 K 94.23 2.60 132.21 1592 0.39
323 K 86.7 2.27 126.24 1490 0.43
348 K 78.46 1.98 124.17 1423 0.46 where Io is the saturation current, V is the applied voltage, n is the diode
373 K 68.85 1.78 118.35 1394 0.51 ideality factor, q is the electronic charge, T is the absolute temperature,
398 K 65.34 1.55 109.73 1387 0.56
and K is the Boltzmann constant.
According to thermionic emission mechanism, the saturation current
is given by Ref. [43]:
 
qϕb
Io ¼ AA* T 2 exp (2)
KT

where A is the device area, A* is the Richardson constant for p-GaP, K is

the Boltzmann constant, and ϕb is the effective barrier height.
The deviation in the linearity of the semilogarithmic plot of the for-
ward I–V characteristics can be attributed to the effects of the series
resistance (Rs) and the native interfacial layer effect under a high applied
voltage. The Rs and shunt resistance (Rsh) are important factors related to
the improved performance and design of devices.
The method [44] used for determining Rs and Rsh is based on the plot
of RJ as a function of the biasing voltage, where [45]:

∂V
Rj ¼ (3)
∂I
Fig. 5 shows the relationship between Rj and the biasing voltage,
which clearly demonstrates that after increasing the forward bias
voltage, the junction resistance decreased and reached a constant value
Fig. 5. Junction resistance (Rj) versus V for the Au/n-PbTe/p-GaP/Al heterojunction. equal to Rs [46]. By contrast, after increasing the reverse applied voltage,
the junction resistance increased and reached a constant value equal to
The photovoltaic characteristics were analyzed using a halogen lamp Rsh [46]. The values of RS and RSh at different temperatures are listed in
at an intensity of 100 mW cm2. The intensity of the light was measured Table 1. We found that the values of RS and RSh decreased as the tem-
with a solar power meter (TM-206, Taiwan). perature increased because the diode conductivity improved as the
temperature increased [47].
The values of n for the n-PbTe/p-GaP heterojunction were obtained
3. Results and discussion
based on the slope of the linear region of Ln I versus V using the following
equation [48].
3.1. Structural investigations
 
q dV
The XRD patterns obtained for the PbTe thin film grown on a GaP n¼ (4)
KT dðln IÞ
wafer are shown in Fig. 2, which indicates that the PbTe thin film was

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M. Nasr et al. Journal of Physics and Chemistry of Solids 115 (2018) 283–288

Fig. 8. Temperature dependence of η for the Au/n-PbTe/p-GaP/Al heterojunction.

Fig. 6. I–V characteristics of the Au/n-PbTe/p-GaP/Al heterojunction at different tem-
peratures under illumination.

Fig. 9. Variation in 1/C2 versus the bias voltage at different temperatures.

Fig. 7. J–V characteristics of the Au/n-PbTe/p-GaP/Al solar cell under illumination Table 1. The leakage current increased as the temperature increased. The
at 50 mW cm2. presence of large low barrier regions led to the observation of the leakage
current [40].
Fig. 6 shows the I–V characteristics of the prepared heterojunction,
Table 2
Solar parameters determined based on the J–V curve for the Au/n-PbTe/p-GaP/Al i.e., n-PbTe/p-GaP, at different temperatures under light illumination,
heterojunction. which indicates that the heterojunction exhibited photovoltaic charac-
T (K) JSC VOC JM VM FF η%
teristics. The fill factor (FF) and the efficiency (η) of this device were
determined using [51]:
298 K 2.27 0.89 1.47 0.58 0.42 3.41
323 K 1.88 0.92 1.38 0.55 0.43 3.12 Vm
Jm
348 K 1.65 0.81 1.18 0.47 0.41 2.21 FF ¼ (6)
373 K 1.47 0.71 0.93 0.37 0.33 1.37
Voc
Jsc
398 K 1.26 0.62 0.86 0.35 0.38 1.20
Voc
Jsc
η¼ FF
100 % (7)
A
Pin
The value of ϕb was obtained using the following equation [49].
 * 2 where Pin is the power density of the incident light from the halogen
KB T AA T lamp, which was estimated as 50 mW cm–2, Voc is the open-circuit
ϕb ¼ Ln (5)
q I0 voltage, Jsc is the short-circuit current density, and A is the device area.
Table 1 shows the dependence of both n and ϕb on the temperature. The J–V characteristics determined for the n-PbTe/p-GaP hetero-
Clearly, n decreased as the temperature increased whereas ϕb increased junction at different temperatures under light illumination at
as the temperature increased due to the inhomogeneity of ϕb and/or the 50 mWcm2 are shown in Fig. 7. The solar parameters estimated for the
interfacial layer of the diode [43,50]. The values of n and ϕb are listed in heterojunction are listed in Table 2.

286
M. Nasr et al.
Table 3
Temperature-dependent values of parameters determined from the C–V characteristics for
the Au/n-PbTe/p-GaP/Al heterojunction.
T (K) Vbi (V) N
1016 (cm3)
298 K 0.48 3.89
323 K 0.75 3.86
348 K 1.00 3.85
373 K 1.20 3.82
398 K 1.37 3.80
Fig. 10. Variation in Vbi versus temperature.
The dependence of the efficiency η for the n-PbTe/p-GaP hetero-
junction on temperature is shown in Fig. 8, which indicates that the value
of η decreased as the temperature increased.
The C–V properties were measured in the dark at a high frequency of
5 MHz and at different temperatures. Fig. 9 shows the C2–V character-
istics determined for the n-PbTe/p-GaP heterojunction at different tem-
peratures (298–398 K). Clearly, the variation in C2–V was linear,
thereby indicating the abrupt nature of the prepared junction.
The dependence of the junction capacitance for an abrupt junction on
the reverse bias potential is given by Ref. [52]:
qNA ND ε1 ε2 1 [16] B. Spanger, U. Schiessl, A. Lambrecht, H. B€ ottner, M. Tacke, Near-room-
C2 ¼
2ðε1 NA þ ε2 ND Þ ðVbi  VÞ
where q is the charge of the electron, ε1 and NA are the dielectric
permittivity and acceptor carrier concentration of the p-GaP substrate,
respectively, and ε2 and ND are the dielectric permittivity and donor
carrier concentration for the PbTe layer. The built-in voltages (Vbi) were
determined by extrapolating the lines to C2 ¼ 0 and the net carrier
concentration N was evaluated from the slope. The Vbi and N values
evaluated for the n-PbTe/p-GaP heterojunction at different temperatures
are listed in Table 3. The variations in the built-in voltage (Vbi) as a
function of temperature are shown in Fig. 10, where Vbi decreased as the
temperature increased [53].
4. Conclusions
In this study, am n-PbTe/p-GaP/Al heterojunction was fabricated
successfully using the EBD technique. The I–V characteristics of the
heterojunction were determined in the temperature range of 298–398 K.
The effects of the temperature on the heterojunction parameters
comprising RF, Rs, Rsh, n, and ϕb were determined based on the I–V
measurements. The C2–V plots indicated the creation of an abrupt
Journal of Physics and Chemistry of Solids 115 (2018) 283–288
energy barrier between the PbTe and GaP. Au/n-PbTe/p-GaP/Al devices
may be suitable for applications in photovoltaic cells The values of the
short circuit current, open circuit voltages, FF, and power conversion
efficiency were calculated.
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