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T.

ME/AGEXPR

SEMICONDUCTOR
1. If an emitter current is changed by 4 mA, the collector current changes by 3.5 mA. The value of 
will be : [JEE
JEE MAIN 2021 (FEB)]
(FEB)
(1) 7 (2) 0.5 (3) 0.875 (4) 3.5

2.

The logic circuit shown above is equivalent to : [JEE


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(FEB)

(A) (B)

(C) (D)

3. Given below are two statements :


Statement I : PN junction diodes can be used to function as transistor, simply by connecting two
diodes, back to back, which acts as the base terminal. [JEE
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(FEB)
Statement II : In the study of transistor, the amplification factor  indicates ratio of the collector
current to the base current. In the light of the above statements, choose the correct answer from the
options given below :
(1) Statement I is false but Statement II is true
(2) Both Statement I and Statement II are true
(3) Both Statement I andnd Statement II are false
(4) Statement I is true but Statement II is false

4. Zener breakdown occurs in a pp-n junction having p and n both : [JEE


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(FEB)
(1) lightly doped and have wide depletion layer.
(2) heavily doped and have narrow depletion layer.
(3) lightly doped and have narrow depletion layer.
(4) heavily doped and have wide depletion layer.

5. For extrinsic semiconductors; when doping level is increased; [JEE


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(FEB)
(1) Fermi-level of p-type
type semiconductor will go upward and Fermi
Fermi-level
level of n-type
n semiconductors
will go downward.
(2) Fermi-level of p-type
type semiconductors will go downward and Fermi-level Fermi of n-type
semiconductor will go upward.
(3) Fermi-level of both p-type
type and nn-type semiconductors
iconductors will go upward for T > TF K and
downward for T < TF K, where TF is Fermi temperature.
(4) Fermi-level of p and n-type
type semiconductors will not be affected.

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T.ME/AGEXPR
6. The truth table for the following logic circuit is : [JEE
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(FEB)

(1) (2)

(3) (4)

7. Match List I with List II. [JEE


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(FEB)
List – I List – II
(a) Rectifier (i) Used either for stepping up or stepping down the
a. c. voltage
(b) Stabilizer (ii) Used to convert a. c. voltage into d. c. voltage
(c) Transformer (iii) Used to remove any ripple in the rectified output voltage
(d) Filter (iv) Used for constant output voltage even when the input
voltage or load current change
Choose the correct answer from the options given below :
(1) (a)–(ii), (b)–(iv), (c)–(i),
(i), (d)
(d)–(iii) (2) (a)–(iii), (b)–(iv), (c)–(i), (d)–
–(ii)
(3) (a)–(ii), (b)–(i), (c)–(iv),
(iv), (d)
(d)–(iii) (4) (a)–(ii), (b)–(i), (c)–(iii), (d)–
–(iv)

8. LED is constructed from Ga-AsAs-P


P semiconducting material. The energy gap of this LED is 1.9 eV.
Calculate the wavelength of light emitted and its colour. [JEE
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(FEB)
–34 8 –1
[h = 6.63 × 10 Js and c = 3 × 10 ms ]
(1) 1046 nm and red colour (2) 654 nm and orange colour
(3) 1046 nm and blue colour (4) 654 nm and red colour

9. The zener diode has a Vz = 30 V. The current passing through the diode for the following circuit is
......... mA. [JEE
JEE MAIN 2021 (FEB)]
(FEB)

333
T.ME/AGEXPR

10. The value of power dissipated


issipated across the zener diode (V z = 15V) connected in the circuit as shown
in the figure is x × 10–1 watt. [JEE
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(MARCH

The value of x, to the nearest integer, is ________ .

11. In the logic circuit shown in the figure, if input A and B are 0 to 1 respectively, the output at Y
would be 'x'. The value of x is ________ . [JEE
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(MARCH

12. The following logic gate is equivalent to: [JEE


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(MARCH

(1) NOR Gate (2) OR Gate


(3) AND Gate (4) NAND Gate

13. The output of the given combination gates represents. [JEE


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(MARCH

(1) XOR Gate (2) NAND Gate


(3) AND Gate (4) NOR Gate

14. Which one of the following will be the output of the given circuit? [JEE
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(MARCH

(1) NOR Gate (2) NAND GATE (3) AND Gate (4) XOR Gate

15. An npn transistor operates as a common emitter amplifier with a power gain of 106. The input
circuit resistance is 100 and the output load resistance is 10k
10k.. The common emitter current
gain '' will be ________. (Round off to the Nearest Integer) [JEE
JEE MAIN 2021 (MARCH)]
(MARCH

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T.ME/AGEXPR

16. The correct relation between a (ratio of collector current to emitter current) and b (ratio of
collector current to base current) of a transistor is: [JEE
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(MARCH
  1 
(1)   (2)   (3)   (4)  
1  1–  1–  1 

17. The typical output characteristic curve for a transistor working in the common-emitter
common
configuration is shown in the figure. [JEE
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(MARCH

The estimated current gain from the figure is ?

18. For the circuit shown below, calculate the value of Iz : [JEE
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(JULY)

(1) 25 mA (2) 0.15 A (3) 0.1 A (4) 0.05 A

19. A zener diode having zener voltage 8 V and power dissipation rating of 0.5 is connected across a
potential divider arranged with maximum potential drop across zener diode is as shown in the
diagram. The value of protective resistance R P is ............... [JEE
JEE MAIN 2021 (JULY)]
(JULY)

335
T.ME/AGEXPR
20. For the forward biased diode characteristics shown in the figure , the dynamic resistance at ID =3
mA will be_______ . . [JEE
JEE MAIN 2021 (JULY)]
(JULY)

21. Consider a situation in which reverse biased current of a particular PP-N


N junction increases when it
is exposed to a light of wavelength  621 nm. During this process, enhancement in carrier
concentration takes place due to generation of hole
hole-electron
electron pairs. The value of band gap is nearly.
[JEE
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(JULY)
(1) 2 eV (2) 4 eV (3) 1 eV (4) 0.5 eV

22. In a given circuit diagram, a 5 V zener diode along with a series resistance is connected across a
50 V power supply. The minimum value of the resistance required, if the maximum zener current
is 90 mA will be _____ . [JEE
JEE MAIN 2021 (JULY)]
(JULY)

23. Identify
entify the logic operation carried out. [JEE
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(JULY)

(1) OR (2) AND (3) NOR (4) NAND

24. In a semiconductor, the number density of intrinsic charge carriers at 27 oC is 1.5 × 1016/m3. If the
semiconductor is doped with impurity atom, the hole density increases to 4.5 × 10 22/m3. The
electron density in the doped semiconductor is________ × 10 9/m3.
[JEE
JEE MAIN 2021 (JULY)]
(JULY)

336
T.ME/AGEXPR
25. A transistor is connected in common emitter circuit configurati
configuration,
on, the collector supply voltage is
10 V and the voltage drop across a resistor of 1000 in the collector circuit is 0.6 V. If the current
gain factor ()) is 24, then the base current is _______ A.
A. (Round off to the Nearest Integer)
[JEE
JEE MAIN 2021 (JULY)]
(JULY)

26. Find the truth table for the function Y of A and B represented in the following figure.
[JEE
JEE MAIN 2021 (JULY)]
(JULY)

(1) (2) (3) (4)

27. In the given figure, each diode has a forward bias resistance of 30
30and
and infinite resistance in
reverse bias. The current I1 will be : [JEE
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(AUGUS

(1) 3.75 A (2) 2.35 A (3) 2 A (4) 2.73 A

28. Four NOR gates are connected as shown in figure. The truth table for the given figure is :
[JEE
JEE MAIN 2021 (AUGUST)]
(AUGUS

A B Y A B Y A B Y A B Y
0 0 1 0 0 0 0 0 0 0 0 1
(1) 0 1 0 (2) 0 1 1 (3) 0 1 1 (4) 0 1 0
1 0 1 1 0 1 1 0 0 1 0 0
1 1 0 1 1 0 1 1 1 1 1 1

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T.ME/AGEXPR

29. For the given circuit, the power across Zener diode is…….mW.
[JEE
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(AUGUS

30. Identify the logic operation carried out by the given circuit ::-
[JEE
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(AUGUS

(1) OR (2) AND (3) NOR (4) NAND

31. Statement – I : By doping silic


silicon
on semiconductor with pentavalent material , the electron density
increases. [JEE
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(AUGUS
Statement – II : The n- type semiconductor has net negative charge.
In the light of the above statements, choose the most appropriate answer from the option given
below :
(1) Statement – I is true but statement – II is false
(2) Statement – I is false but Statement – II is true
(3) Both statement – I and Statement – II are true
(4) Both Statement – I and Statement – II are false .

IC 1 
32. For a transistor  and  are given as   and   , Then the correct relation between 
IE 
and  will be : [JEE
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(AUGUS
1   
(1)   (2)   (3)   1 (4)  
1  1 
33. A zener diode of power rating 2W is to be used as a voltage regulator. If the zener diode has a
breakdown of 10 V and it has to regulate voltage fluctuated between 6 V and 14 V, the value of R s
for safe operation should be _________ . [JEE
JEE MAIN 2021 (AUGUST)]
(AUGUS

34. For a transistor in CE mode to be used as an amplifier, it must be operated in :


[JEE
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(AUGUS
(1) Both cut-off
off and Saturation (2) Saturation region only
(3) Cut-off region only (4) The active region only

338
T.ME/AGEXPR
35. A circuit is arranged as shown in figure. The output voltage V 0 is equal to ___________V.
[JEE
JEE MAIN 2021 (AUGUST)]
(AUGUS

36. If VA and VB ate the input voltage (either 5V or 0V) and V o is the output voltage then the two
gates represented in the following circuit (A) and (B) are ::- [JEE
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(AUGUS

(1) AND and OR Gate (2) OR and NOT Gate


(3) NAND and NOR Gate (4) AND and NOT Gate

37. Statement – I : [JEE


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(AUGUS
To get a steady dc output from the pulsating voltage received from a full wave rectifier we can
connect a capacitor across the output parallel to the load R L.
Statement – II :
To get a steady dc output from the pulsating voltage received from a full wave rectifier we can
connect an inductor in series with R L.
In the light of the above statements, choose the most appropriate answer from the option given
below :
(1) Statement I is true but statement II is false
(2) Statement – I is false but Statement – II is true
(3) Both Statement – I and Statement – II are false
(4) Both Statement –II and Statement
Statement- II are true

38. In the following logic circuit the seque


sequence
nce of the inputs A, B are (0, 0), (0, 1), (1, 0) and (1, 1).
The output Y for this sequence will be : [JEE
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(AUGUS

(1) 1, 0, 1, 0 (2) 0, 1, 0, 1 (3) 1, 1, 1, 0 (4) 0, 0, 1, 1

339
T.ME/AGEXPR
39. Choose the correct waveform that can represent the voltage across R of the following circuit,
assuming the diode is ideal one : [JEE
JEE MAIN 2021 (AUGUST)]
(AUGUS

(1) (2)

(3) (4)

ANSWER KEY
1. 1 2. 4 3. 1 4. 2 5. 2 6. 2 7. 1
8. 4 9. 9 10. 5 11. 0 12. 1 13. 2 14. 4
15. 100 16. 4 17. 200 18. 1 19. 192 20. 25 21. 1
22. 500 23. 2 24. 5 25. 25 26. 2 27. 3 28. 4
29. 120 30. 3 31. 1 32. 2 33. 20 34. 4 35. 5
36. 2 37. 4 38. 3 39. 3

340
T.ME/AGEXPR

SOLUTION
1. (1)
Sol. I = IC + IB
 I = IC + IB
 IB = 0.5 mA
I
= C
I B
3.5
=
0.5
=7

2. (4)
Sol. Truth table of the given gate :
A B C
0 0 0
0 1 1
1 0 0
1 1 0
Truth table of option (1)
A B C
0 0 1
0 1 1
1 0 0
1 1 1
Truth table of option (2)
A B C
0 0 1
0 1 0
1 0 1
1 1 1
Truth table of option (3)
A B C
0 0 1
0 1 0
1 0 0
1 1 0
Truth table of option (4)
A B C
0 0 0
0 1 1
1 0 0
1 1 0

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T.ME/AGEXPR
Since option (1) has same truth table, hence answer is option (4) is correct.
Alternative solution :
Given Boolean expression can be written as A  B = C
 C = A . B  A .B
Hence option (4) is correct

3. (1)
Sol. Back to back diode will not the make a transistor
i
 c
ib

4. (2)
Sol. Zener diode is heavily doped and have narrow depletion layer.
Option (2) is correct.

5. (2)
Sol. conceptual

6. (2)
Sol. 
y = AB  AB 
y = AB . AB
y =  A  B . A  B

y  A.A  AB  A.B  BB
y = AB  AB

7. (1)
Sol. (a) Rectifier AC to DC
(b) Stabilizer  used for constant output voltage even when input voltage or current change.
(c) Transformer  Step - up or step - down ac voltage.
(d) Filter  used to remove any ripple in the rectified output voltage.

342
T.ME/AGEXPR

8. (4)
hc 6.6 1034  3 108
Sol.    6.54 107
E 1.9 1.6 1019
= 654 nm
Red color

9. (9)

Sol.

60
i A
4000
30
i1  A
5000
60 30 9
i  i1    A
4000 5000 1000
current from zener diode
iz = i– i1 = 9mA

10. (5)

Sol.

Voltage across Rs = 22 – 15 = 7V
7 1
Current through Rs = I =  A
35 5
15 1
Current through 90 = I2 =  A
90 6
1 1 1
Current trough zener = –  A
5 6 30
Power through zener diode
P = VI
1
P = 15   0.5watt
30
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T.ME/AGEXPR

11. (0)

Sol.

12. (1)
Sol. Truth table for the given logic gate:

The truth table is similar to that of a NOR gate.

13. (2)
Sol. By De Morgan's theorem, we have

14. (4)
Sol. Conceptual

15. (100)
R0
Sol. 106  2 
Ri
10 4
106  2 
10 2
2  104    100

16. (4)
IC I
Sol.  ,  C
IE IB
I E  I B  IC
IC 1 1
  
IB  IC IB  1 1
1
IC 


1 

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T.ME/AGEXPR

17. (200)
IC 2 103 1
Sol.      103
I B 10 106 5
  2 102
  200

18. (1)
50
Sol. I=  50mA
1000
R = 1000

50
I  25mA
2000
IZ  I1000  I2000 = 50 – 25 = 25mA

19. (192)
Sol. P = Vi
0.5 = 8i
1
i= A
16
E = 20 = 8 + I RP
RP = 12 × 16 = 192

20. (25)
dV 1 1
Sol. Rd   
di di 5  110 3
dv 0.75  0.65
100
 25
4

21. (1)
hc
Sol. Band gap 
0
0 ; threshold wavelength
1242ev  nm
Band gap =  2eV
621nm

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T.ME/AGEXPR

22. (500)

Sol.

Voltage across RL = 5V
5
 i2 =
RL
Also voltage across R = 50 – 5 = 45 volt
v 45
By v  iR  R  
i ii  i 2
45
R
5
90mA 
RL
Current in Zener diode is maximum when R L  
 (i2  0 and i1 = i)
45
So R =  500
90mA
23. (2)

Sol.

24. (5)
Sol. nenh = ni2
n i2 1.5  1016  1.5 1.5 1032
2

ne   =
nh 4.5  10 22 4.5 10 22
5 × 109/m3
25. (25)
IC
Sol.   24; R C  1000
IB
V  0.6
0.6
IC 
1000
I C  6  104
I C 6  10 4
IB    25A
 24

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T.ME/AGEXPR

26. (2)

Sol.

Y  A.B  B

27. (3)

Sol.

As per diagram,
Diode D1 & D2 are in forward bias i.e. R = 30
30whereas diode D3 is in reverse bias i.e. R =
infinite
 Equivalent circuit will be
Applying KVL starting from point A

  1   30   1  × 130 – I1 × 20 + 200 = 0
I I
2 2
 – 100 I1 + 200 = 0
I1 = 2
Option (3)

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T.ME/AGEXPR

28. (4)

Sol.

y  (A  A  B)  (B  A  B)
y  (A  A  B)  (B  A  B)
A B y
0 0 1
0 1 0
1 0 0
1 1 1

29. (120)

Sol.

10V
i  2mA
5k
14V
I  14mA
1k
 Iz  12mA
 P  Iz Vz  120mW

30. (3)

Sol.

Option (3)

31. (1)
Sol. Pentavalent activities have excess free e
So e  density increases but overall semiconductor is neutral.
Option (1)
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T.ME/AGEXPR

32. (2)
IC I
Sol.  ,   C ; I E  IC  IB
IE IB
IC I /I 
  C B  
IC  IB IC  1   1
IB
1 1
1 
 
1 1 

 


1 

33. (20)
Sol. When unregulated voltage is 14 V voltage across zener diode must be 10 V so potential difference
across resistor VRs  4V and Pzener = 2W
VI = 2
2
I  0.2A
10
VRs  I R s
40
4  0.2R s  R s   20
2
34. (4)
Sol. Active region of the CE transistor is linear region and is best suited for its use as an amplifier
35. (5)
Sol. A diodes D1 and D2 are in forward bias, so they acted as negligible resistance
 Input voltage become zero

 Input current is zero  Output current is zero  V0 = 5 volt

36. (2)
Sol. VA = 5V  A=1
VA = 0V  A=0
VB = 5 V  B=1
VB = 0V  B=0
If A = B = 0, there is no potential anywhere here V0 = 0
If A = 1, B = 0, Diode D1 id forward biased, here V0 = 5V
If A = 0 , B = 1, Diode D2 is forward biased hence V0 = 5V
If A = 1, B = 1, Both diodes are forward biased Truth table for Ist
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T.ME/AGEXPR

37. (4)
Sol. To convert pulsating dc into steady dc both of mentioned method are correct.

38. (3)

Sol.

Y  (A.B).(A  B)

Y) (0,0)  1

Y) ( 0,1)  1

Y) (1,0)  1

Y) (1,1)  0

option (3) is correct

39. (3)
Ans. by Nucleus (Bonus)
Sol. When Vi> 3 volt, diode will be in forward biased state
When Vi  3 volt; diode will be in reverse biased state.
So, current will flow only for less than half cycle ⇒ VR will be only for less than half cycle.

350

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