STGW80H65DFB, STGWT80H65DFB

Datasheet

Trench gate field-stop 650 V, 80 A high speed HB series IGBT

Features
TAB • Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
3

1
2
3 • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
2
1
• Tight parameter distribution
TO-247 TO-3P
• Safe paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode

Applications
• Photovoltaic inverters
• High frequency converters

Description
These devices are IGBTs developed using an advanced proprietary trench gate field-
stop structure. These devices are part of the new HB series of IGBTs, which
represent an optimum compromise between conduction and switching loss to
maximize the efficiency of any frequency converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.

Product status link

STGW80H65DFB
STGWT80H65DFB

Product summary

Order code STGW80H65DFB

Marking GW80H65DFB
Package TO-247
Packing Tube
Order code STGWT80H65DFB
Marking GWT80H65DFB
Package TO-3P
Packing Tube

DS9536 - Rev 9 - June 2019 www.st.com

For further information contact your local STMicroelectronics sales office.
 STGW80H65DFB, STGWT80H65DFB
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 650 V

Continuous collector current at TC = 25 °C 120 (1)

IC A
Continuous collector current at TC = 100 °C 80

ICP (2) Pulsed collector current (tp ≤ 1 μs, TJ < 175 °C) 300 A

Gate-emitter voltage ±20 V

VGE
Transient gate-emitter voltage ±30 V
Continuous forward current at TC = 25 °C 120 (1)
IF A
Continuous forward current at TC = 100 °C 80

IFP (2) Pulsed forward current (tp ≤ 1 μs, TJ < 175 °C) 300 A

PTOT Total power dissipation at TC = 25 °C 470 W

TSTG Storage temperature range - 55 to 150

°C
TJ Operating junction temperature range - 55 to 175

1. Current level is limited by bond wires

2. Defined by design, not subject to production test.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case IGBT 0.32

RthJC Thermal resistance junction-case diode 0.66 °C/W

RthJA Thermal resistance junction-ambient 50

DS9536 - Rev 9 page 2/18

 STGW80H65DFB, STGWT80H65DFB
Electrical characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter breakdown
V(BR)CES VGE = 0 V, IC = 2 mA 650 V
voltage
VGE = 15 V, IC = 80 A 1.6 2
Collector-emitter saturation
VCE(sat) VGE = 15 V, IC = 80 A, TJ = 125 °C 1.8 V
voltage
VGE = 15 V, IC = 80 A, TJ = 175 °C 1.9

IF = 80 A 1.9 2.3

VF Forward on-voltage IF = 80 A, TJ = 125 °C 1.6 V

IF = 80 A, TJ = 175 °C 1.5

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 650 V 100 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance - 10524 -

Coes Output capacitance VCE= 25 V, f = 1 MHz, VGE = 0 V - 385 - pF

Cres Reverse transfer capacitance - 215 -

Qg Total gate charge - 414 -

VCC = 520 V, IC = 80 A, VGE = 15 V
Qge Gate-emitter charge - 78 - nC
(see Figure 29. Gate charge test circuit)
Qgc Gate-collector charge - 170 -

DS9536 - Rev 9 page 3/18

 STGW80H65DFB, STGWT80H65DFB
Electrical characteristics

Table 5. IGBT switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time 84 -

ns
tr Current rise time 52 -

(di/dt)on Turn-on current slope 1270 - A/µs

VCE = 400 V, IC = 80 A, VGE = 15 V,
td(off) Turn-off-delay time RG = 10 Ω 280 -
ns
tf Current fall time (see Figure 28. Test circuit for inductive 31 -
load switching)
Eon (1) Turn-on switching energy 2.1 -

Eoff (2) Turn-off switching energy 1.5 - mJ

Ets Total switching energy 3.6 -

td(on) Turn-on delay time 77 -

ns
tr Current rise time 51 -

(di/dt)on Turn-on current slope 1270 - A/µs

VCE = 400 V, IC = 80 A, VGE = 15 V,
td(off) Turn-off-delay time RG = 10 Ω, TJ = 175 °C 328 -
ns
tf Current fall time (see Figure 28. Test circuit for inductive 30 -
load switching)
Eon (1) Turn-on switching energy 4.4 -

Eoff (2) mJ
Turn-off switching energy 2.1 -

Ets Total switching energy 6.5 -

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time - 85 - ns

Qrr Reverse recovery charge - 1105 - nC

IF = 80 A, VR = 400 V, VGE = 15 V di/
Irrm Reverse recovery current dt = 100 A/µs - 26 - A

Peak rate of fall of reverse (see Figure 28. Test circuit for inductive
dIrr/dt load switching) - 722 - A/µs
recovery current during tb

Err Reverse recovery energy - 267 - µJ

trr Reverse recovery time - 149 - ns

Qrr Reverse recovery charge - 4920 - nC

IF = 80 A, VR = 400 V, VGE = 15 V,
Irrm Reverse recovery current TJ = 175 °C di/dt = 100 A/µs - 66 - A

Peak rate of fall of reverse (see Figure 28. Test circuit for inductive
dIrr/dt load switching) - 546 - A/µs
recovery current during tb

Err Reverse recovery energy - 1172 - µJ

DS9536 - Rev 9 page 4/18

 STGW80H65DFB, STGWT80H65DFB
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 2. Collector current vs case temperature

Figure 1. Power dissipation vs case temperature
GIPD160920130941FSR
IC
PTOT GIPD160920130948FSR
(W) (A) VGE =15 V,TJ =175 °C
VGE = 15 V, TJ = 175 °C
120
400
100

300 80

60
200

40
100
20

0 0
0 50 100 150 TC(°C)
0 25 50 75 100 125 150 TC(°C)

Figure 3. Output characteristics (TJ = 25 °C) Figure 4. Output characteristics (TJ = 175 °C)

IC IGBT060715EWFRWOC25 IC IGBT060715EWFRWOC175
(A) V GE = 15 V 13 V (A) V GE = 15 V 13 V
11 V 11 V
160 160
9V
140 140
9V
120 120

100 100

80 80

60 60

40 40
7V
20 20
0 7V 0
0 1 2 3 4 V CE (V) 0 1 2 3 4 V CE (V)

Figure 5. VCE(sat) vs junction temperature Figure 6. VCE(sat) vs collector current

V CE(sat) IGBT060715EWFRWVCET V CE(sat) IGBT060715EWFRWVCEC

(V) V GE = 15 V (V) V GE = 15 V

2.4
2.6 T J = 175 °C T J = 25 °C
I C = 160 A
2.0

2.2 T J = -40 °C
1.6

I C = 80 A
1.2
1.8

0.8
1.4
I C = 40 A 0.4

1.0 0.0
-50 0 50 100 150 T J (°C) 0 40 80 120 160 I C (A)

DS9536 - Rev 9 page 5/18

 STGW80H65DFB, STGWT80H65DFB
Electrical characteristics (curves)

Figure 7. Collector current vs switching frequency Figure 8. Forward bias safe operating area
GIPD260520141426FSR
Ic [A] IC IGBT171120161002FSOA
(A)
160

tp = 1µs
140 Tc=80°C
10 2
120 Tc=100 °C
tp = 10µs
100
10 1 tp = 100µs
80
rectangular current shape,
60 (duty cycle=0.5, VCC = 400V, RG=10 Ω,
VGE = 0/15 V, TJ =175°C) single pulse, TC = 25°C
TJ < 175 °C, VGE = 15 V
40 10 0
1 10 f [kHz] 10 0 10 1 10 2 VCE (V)

Figure 9. Transfer characteristics

Figure 10. Diode VF vs forward current
GIPD160920131135FSR
VF
IC IGBT060715EWFRWTCH (V)
(A) 2.4
V CE = 4 V -40°C
200

2.0 25°C
160

120 1.6
TJ= 175°C
80
T J = 175 °C
1.2
40
T J = 25 °C
0.8
0 20 40 60 80 100 120 140 IF(A)
5 6 7 8 9 V GE (V)

Figure 11. Normalized VGE(th) vs junction temperature Figure 12. Normalized V(BR)CES vs junction temperature
VGE(th) GIPD160920131151FSR VBR(CES) GIPD160920131144FSR
(norm) (norm)
1.1 IC = 2 mA
IC = 1mA
1.1
1.0

0.9

1.0
0.8

0.7

0.6 0.9
-50 0 50 100 150 TJ(°C) -50 0 50 100 150 TJ(°C)

DS9536 - Rev 9 page 6/18

 STGW80H65DFB, STGWT80H65DFB
Electrical characteristics (curves)

Figure 13. Capacitance variations

Figure 14. Gate charge vs gate-emitter voltage
VGE GIPD160920131156FSR
C GIPD160920131200FSR (V)
(pF)
16 IC = 80 A
VCC = 520 V

10000 CIES
12

1000 8

100 COES 4
CRES

0
10 0 100 200 300 400 Qg(nC)
0.1 1 10 100 VCE(V)

Figure 15. Switching energy vs collector current Figure 16. Switching energy vs gate resistance
GIPD160920131436FSR GIPD160920131208FSR
E E
(µJ) (µJ)
VCC= 400V, VGE = 15V VCC= 400V, VGE = 15V
RG= 10Ω, TJ= 175°C IC= 80A, TJ= 175°C
9000 5000
8000
EON
7000 4200
EON
6000
5000 3400

4000
2600
3000
2000 EOFF
1800 EOFF
1000
0 1000
0 20 40 60 80 100 120 140 IC(A) 2 6 10 14 18 RG(Ω)

Figure 17. Switching energy vs temperature Figure 18. Switching energy vs collector emitter voltage
GIPD160920131504FSR GIPD160920131524FSR
E E
(µJ) (µJ)
VCC= 400V, VGE = 15V 6000 TJ= 175°C, VGE = 15V
4500 IC= 80A, Rg = 10Ω IC= 80A, Rg = 10Ω
EON EON
4000 5000

3500
4000
3000

2500 3000
EOFF
2000
2000 EOFF
1500

1000 1000
0 25 50 75 100 125 150 175 TJ(°C) 150 200 250 300 350 400 450 VCE(V)

DS9536 - Rev 9 page 7/18

 STGW80H65DFB, STGWT80H65DFB
Electrical characteristics (curves)

Figure 19. Switching times vs collector current Figure 20. Switching times vs gate resistance
GIPD160920131533FSR GIPD160920131539FSR
t t
(ns) (ns) TJ= 175°C, VGE = 15V tdoff
tdoff VCC= 400V, I C= 80A

100 tdon
tdon
tr
100
tr

10 tf
tf

TJ= 175°C, VGE = 15V

VCC= 400V, R g= 10Ω
1 10
20 40 60 80 100 120 140 IC(A) 4 8 12 16 20 Rg(Ω)

Figure 21. Reverse recovery current vs diode current

Figure 22. Reverse recovery time vs diode current slope
slope
GIPD160920131557FSR
GIPD160920131550FSR t rr
Irm (ns)
(A) VF= 400V, IF= 80A
VF= 400V,
= 80IF=
A 80A 350
120
300

250
TJ= 175°C
80
200
TJ= 175°C
150

40 100
TJ= 25°C
50
TJ= 25°C
0
0 0 500 1000 1500 2000 2500 di/dt(A/µs)
0 500 1000 1500 2000 2500 di/dt(A/µs)

Figure 23. Reverse recovery charge vs diode current Figure 24. Reverse recovery energy vs diode current
slope slope
GIPD160920131602FSR GIPD160920131610FSR
Qrr Err
(nC) (µJ)
VF= 400V, IF= 80A r
7000 1200
6000 TJ= 175°C TJ= 175°C
1000
5000
800
4000 VF= 400V, IF= 80A
600
3000
400
2000

1000 200
TJ= 25°C TJ= 25°C
0 0
0 500 1000 1500 2000 2500 di/dt(A/µs) 0 500 1000 1500 2000 2500 di/dt(A/µs)

DS9536 - Rev 9 page 8/18

 STGW80H65DFB, STGWT80H65DFB
Electrical characteristics (curves)

Figure 25. Thermal impedance for IGBT

K ZthTO2T_A

δ = 0.5

δ = 0.2
δ = 0.05
δ = 0.1
δ = 0.02
10 -1
δ = 0.01
Single pulse

10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 tp (s)

Figure 26. Thermal impedance for diode

DS9536 - Rev 9 page 9/18

 STGW80H65DFB, STGWT80H65DFB
Test circuits

3 Test circuits

Figure 27. Test circuit for inductive load switching Figure 28. Gate charge test circuit

A A
C
L=100 µH k
G k

E B
B
C 3.3 1000 VCC
µF µF
k
G D.U.T
k
+ RG E

k
-
k

AM01504v1 AM01505v1

Figure 30. Diode reverse recovery waveform

Figure 29. Switching waveform

90%

VG 10%

90%
25
VCE tr(Voff)
10%
tcross

90%

IC td(off)
10%
td(on) tf
tr(Ion)
ton toff

AM01506v1

DS9536 - Rev 9 page 10/18

 STGW80H65DFB, STGWT80H65DFB
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

DS9536 - Rev 9 page 11/18

 STGW80H65DFB, STGWT80H65DFB
TO-247 package information

4.1 TO-247 package information

Figure 31. TO-247 package outline

0075325_9

DS9536 - Rev 9 page 12/18

 STGW80H65DFB, STGWT80H65DFB
TO-247 package information

Table 7. TO-247 package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
ØP 3.55 3.65
ØR 4.50 5.50
S 5.30 5.50 5.70

DS9536 - Rev 9 page 13/18

 STGW80H65DFB, STGWT80H65DFB
TO-3P package information

4.2 TO-3P package information

Figure 32. TO-3P package outline

8045950_3

DS9536 - Rev 9 page 14/18

 STGW80H65DFB, STGWT80H65DFB
TO-3P package information

Table 8. TO-3P package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.60 4.80 5.00

A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1.00 1.20
b1 1.80 2.00 2.20
b2 2.80 3.00 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.70 13.90 14.10
E 15.40 15.60 15.80
E1 13.40 13.60 13.80
E2 9.40 9.60 9.90
e 5.15 5.45 5.75
L 19.80 20.00 20.20
L1 3.30 3.50 3.70
L2 18.20 18.40 18.60
ØP 3.30 3.40 3.50
ØP1 3.10 3.20 3.30
Q 4.80 5.00 5.20
Q1 3.60 3.80 4.00

DS9536 - Rev 9 page 15/18

 STGW80H65DFB, STGWT80H65DFB

Revision history

Table 9. Document revision history

Date Revision Changes

12-Mar-2013 1 First release.

Document status promoted from preliminary to production data. Added Section 2.1:
18-Sep-2013 2
Electrical characteristics (curves)
Added device in Max247. Modified Table 1 accordingly.
20-Nov-2013 3
Updated Section 4: Package information. Minor text changes in cover page.
Updated title and description in cover page.

24-Jan-2014 4 Updated Table 6: IGBT switching characteristics (inductive load), Table 7: Diode
switching characteristics (inductive load), Figure 9: Forward bias safe operating area
andFigure 14: Switching energy vs. temperature.
Updated Figure 5: Collector current vs. case temperature, Figure 6: Power dissipation
vs. case temperature, Figure 18: Switching times vs. collector current, Figure 19:
Switching times vs. gate resistance and Figure 24: Capacitance variations.
13-Jun-2014 5
Added Figure 25: Collector current vs. switching frequency. Updated Section 4:
Package information.
Minor text changes.
07-May-2015 6 Added TO-247 long leads package information.
Updated Figure 2: "Output characteristics (TJ= 25 °C) ", Figure 3: "Output
characteristics (TJ= 175 °C) ", Figure 4: "Transfer characteristics ", Figure 7:
"VCE(sat) vs. junction temperature" and Figure 8: "VCE (sat) vs. collector current".
21-Sep-2016 7
The part number STGY80H65DFB has been moved to a separate datasheet.
Minor text changes.
Updated Table 2: "Absolute maximum ratings" and Figure 9: "Forward bias safe
operating area".
17-Nov-2016 8
The part number STGWA80H65DFB has been moved to a separate datasheet.
Updated document accordingly.
Modified Table 1. Absolute maximum ratings.
14-Jun-2019 9 Updated Section 4.1 TO-247 package information.
Minor text changes.

DS9536 - Rev 9 page 16/18

 STGW80H65DFB, STGWT80H65DFB
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.2 TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

DS9536 - Rev 9 page 17/18

 STGW80H65DFB, STGWT80H65DFB

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved

DS9536 - Rev 9 page 18/18