DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTORS uPA1712 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transis- tor designed for power management applications of notebook computers and Li-ion battery protection circuit, PACKAGE DIMENSIONS (in miltimeter) FEATURES RAAB + Low On-Resistance p88 {game Fosin = 20 ma. MAX. (Vos = 10 V, l= 40 A) 2 Sone | ban Rosie « 48 m0. MAX, (Vos = -4 V, Ib» ~4.0.A) ° + Low Gie Ose = 2700 pF TYP. HEHE sows + Builtin G-S Protection Diode 4 a + ‘Small ane Surface Mount Package 317 S37MAK ia (Power SOP) 3 a - + off oswe Sp) coca eer] 3 loose Bow) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, all terminals are connected) Drain to Source Voltage Voss -90 v _ Gate to Source Voltage Voss 720 v Onin Goren use! oe = t aoa ‘Total Power Dissipation (Ta = 25 °C)" Pr 2.0 w z 7 Channel Temperature a ate Storage Temperature To 85 Prtecton oe +180 Notes 1. PW<< 10 ys, Duty Cycle < 1% 2, Mounted on ceramic substrate of 1200 mmx 0.7 mm The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device acutally used, an adational protection circuit is extemally required if voltage exceeding the rated voltage may be applied to this deviee. © NEC Comortion 1996,NEC MPA1712 ELECTRICAL CHARACTERISTICS (Ta = 25 °C, all terminals are connected) GuamncTensnes | swreo |Testeonomions J wn [ve | wax | ont Dram Source Rion | Ver=at0V b= 0A «| = | a ssh ienln Rosine | Ves =—4V, Ine —4.0A 7 48 ma GatstoSouce cut Vatoge | _veoen | Yor= 10, bat ma ae Laz pas Dv Forward Taster Acitance im «| s 5 Drain Leakage Covent tes omen Gate Source teatage Gunert | lo zo] 1a Tap Capacance Ge = 9 Outpt Capachance = 1000 oF overse Transfer apastaree [Cw 0 oF Tun-Gn Delay Tne i ~ 5 rise Tine 5 150 im “uno Oey Tine 0 5 FalTine . 0 = Tota Gat Charge & = 6 Gato Source Grange on 73 6 Gato Oran Carp om 148 16 Body Dodo Forward Votape Won 80 v eves Recor Tine te | a80A veano © i Toverse Recovery Care oat 20 as rn 1 Test Circuit Switching Time Test Circult2 Gate charge eo ve : r % Duy Cycle 51 %NEC HPAI712 DERATING FACTOR OF FORWARO BIAS. TOTAL POWER DISSIPATION ve SAFE OMERAING AREA ARBIENT TEMBERATURE 28; * : Nouns on cwramic : bene a = 24) 1200 me 0.7 mn § 20 :* a @ 26 $60] e 3 Ba ca 3 os| & an) XS ‘04 00a 8085 108 T2140" 160 0 20a 808600 Tad 140 160 Ta Amblont Temperate = *C Ta: Amblont Temperate FORWARO BIAS SAFE OPERATING AREA =100 10 a Hts 25-6 0, [Sine Puse “or no Transient Thermal Resistance - “CIW se Siozaa| on oot 001 10H =10 ‘Vor Drain to Source Vatiage - V 100 Note: Neunted on ceramic Subsrate of 1200 mm? x 0.7 mm ‘TRANSIENT THERMAL RESISTANCE ve, PULSE WIOTH 100 tm 10m Pw. 100m Pulse With ee a fares SE Eran 10 100 ~—~1000NEC FORWARD TRANSFER CHARACTERISTICS 100 Fused <0 : & gS 3 01 ° 2 Voss Gato to Souce Votage -V ORWARO TRANSFER ADMITTANCE vs BRAN CURRENT can Yous -i0v 1 f= Poised 35.6) z Be § sol ll28-€1 3 £ i + os <1 100 lo Dian Gen: A ¢ BRAWN To source on-sraTE % —_RERSAREEVE RAN SUN enr 8 ulsed] Z é j 3 E é HPAI712 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed as Vos Drain to Souree Votage - V @__ DRAN TO SOURCE ON.STATE RESISTANCE vs. 2 SETS Sounce vOLinGe pe Fue é fo é i i» $ 5 6 fo es 0 8 é Vos Gate to Source Votage - V GATE To SOURCE CUTOFF VOLTAGE vs. SEARNECTTENPERATURE 3 Von = 10 Qe KI lo=—1 mA ats . 8 g-10 é 2 gs) j fo 50 =O =e oo yesi00 ea tot) ‘Te Channel Temperature = °C7 2 paw to sounce on srare RESISTANCE vs source 70 ona Done 5 SERIA FEWPER URE SaRGRD VERGE i ie < 100 3 i a” é wl : I 8 2 j a 2 é a gon ro pata | cog opt omeal o 75 1 75 7 Ter Channel Temperature - °C Vso - Source to Drain Voltage -V CAPACITANCE ws OFAN TO SBeneE NSE AaE SWING CHARACTERISTICS 1000 e100 2 i : e i + 000 © 100) 3 tm Ew d é i “on =10 =100 Vo Drain to Source Votage -V REVERSE RECOVERY TIME vs, ORAW CURRENT Reverse Recovery Time ns of t 10 100 le Dis Curent = lo Desin Curent =A DYNAMIC INPUTIOUTPUT CHARACTERISTICS 9 > eres] 4 $0] 28 3 oe & Voe g § me am 8 2 42 10 46 i i 28 Wer ° ° 2 2- Gate Charge -n