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https://doi.org/10.1016/j.apsusc.2015.04.032 ↗
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Abstract
We present the growth of In2S3 onto Cu3BiS3 layers and soda-lime glass (SLG) substrates by using chemical
bath deposition (CBD) and physical co-evaporation. The results reveal that the microstructure and the
optical properties of the In2S3 films are highly dependent on the growth method. X-ray diffractrograms
show that In2S3 films have a higher crystallinity when growing by co-evaporation than by CBD. In2S3 thin
films grown by CBD with a thickness below 170 nm have an amorphous structure however when
increasing the thickness the films exhibit two diffraction peaks associated to the (1 0 3) and (1 0 7) planes of
the β-In2S3 tetragonal structure. It was also found that the In2S3 films present an energy bandgap (Eg) of
about 2.75 eV, regardless of the thickness of the samples.
Introduction
Currently, the maximum conversion efficiency achieved in thin film technology CIGS-based solar cells is
21.7% [1], [2], which uses CdS as the buffer layer. However, due to the use of Cd, a highly toxic element, a
special interest has emerged searching for potential candidates to replace it [3], [4], [5], [6]. In2S3 is
considered the most promising buffer layer because it has no toxic elements [7] and the production cost is
low. Moreover, recent researches have shown a good performance with CIGS absorber layers achieving a
comparable conversion efficiency compared to those using CdS layers [8].
https://www.sciencedirect.com/science/article/abs/pii/S0169433215008727?via%3Dihub 1/7
19/6/23, 3:14 Optical and structural study of In2S3 thin films growth by co-evaporation and chemical bath deposition (CBD) on Cu3BiS3 - ScienceDirect
In2S3 has been synthesized through various techniques such as co-evaporation [9], [10], [11], RF sputtering
[12], atomic layer deposition (ALD) [13], [14], spray ions layer gas reaction (ILGAR) [15], spray pyrolysis
[16], and chemical bath deposition (CBD) [17], [18], [19]; however, the optical properties depend strongly
on the growth technique used and the energy bandgap (Eg) can vary. In2S3 films grown by co-evaporation
show Eg values of 2.25–2.40 eV [20], [21] while films deposited by CBD have a Eg between 2.5 and 3.2 eV
[22], [23] depending on the synthesis conditions.
Regarding the absorber layer, special attention have led to propose compounds without non-abundant
elements as Ga and In in their structure as the Cu2ZnSn(S,Se)4 (kesterite) [24], [25] or the Cu3BiS3
(witichenitte) compounds [26], [27].
In this work, it was compared the morphology, structural and optical properties of In2S3 films grown by
co-evaporation and CBD on solar lime glass and Cu3BiS3 as substrates. We also propose a new Cu3BiS3
based solar cell structure corresponding to Al/TCO/In2S3/Cu3BiS3/Mo.
Section snippets
Cu3BiS3 thin films are deposited by co-evaporation of the elemental precursors (Cu, Bi, and S) in a two-
stage process [27]. The substrate temperature was maintained at 300 °C for both stages. In the first stage,
simultaneous evaporation of Bi and S lead to the formation of a Bi2S3 thin film (Eq. (1)). Bi and S
evaporation rate were 2.1 and 4.0 Å/s using a tungsten crucible and a stainless steel Knudsen cell
respectively. In the second stage, Cu and S were simultaneously evaporated onto the Bi2S3…
Crystal structure
Synthesized In2S3 thin films grown by CBD and co-evaporation were characterized through XRD
measurements to identify the crystalline phases and structural properties. Adjusting the synthesis
parameters, thin films were able to be grown on glass substrate by CBD with a deposition time of 60 min for
170 nm films thickness. In Fig. 1 diffractogram patterns of In2S3 thin films deposited on glass substrate by
CBD and co-evaporation are shown and compared to JCPDS database and theoretical simulation…
Conclusions
The In2S3 growth has been compared by two deposition methods. Films grown by CBD have lower
crystallinity than those grown by co-evaporation with the same thickness as confirmed by the X-ray
diffractograms. Thicker films grown by CBD show a similar X-ray diffraction pattern that those co-
evaporated. The results also reveal that the films have the tetragonal β- In2S3 phase and are oriented along
the [1 0 3] direction, this crystal phase is stable in a substrate temperature from 200 to 400 °C.
The Eg …
Acknowledgements
https://www.sciencedirect.com/science/article/abs/pii/S0169433215008727?via%3Dihub 2/7
19/6/23, 3:14 Optical and structural study of In2S3 thin films growth by co-evaporation and chemical bath deposition (CBD) on Cu3BiS3 - ScienceDirect
This work was supported by COLCIENCIAS, Universidad Nacional de Colombia and Colegio Mayor de
Nuestra Señora del Rosario and Universidad de los Andes. We thank the Semiconducting Materials and
Solar Energy Group led by Dr. Gerardo Gordillo for laboratory support in sample preparation.…
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https://www.sciencedirect.com/science/article/abs/pii/S0169433215008727?via%3Dihub 3/7
19/6/23, 3:14 Optical and structural study of In2S3 thin films growth by co-evaporation and chemical bath deposition (CBD) on Cu3BiS3 - ScienceDirect
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Cited by (14)
Citation Excerpt :
…Copper bismuth sulfide Cu3BiS3, a phase of the cuprobismutite, has an optical bandgap in the range of 1.2–1.8 eV,
intense absorption coefficient ∼105 cm−1 and electrical conductivity ∼10−4–10−2 Ω−1 cm−1 is emerging as one of the
potential light harvester in solar cells [13]. Cu3BiS3 thin films synthesis has been well reported by employing a variety of
techniques such as non-sequential deposition of Bi2S3 and Cu2S followed by heat treatment in vacuum [14], sputtering in
one and/or two steps [15], ethanol-thermal route [16], solvothermal route [17], electrodeposition [18], hydrothermal [19–
20] spin coating [21] and co-evaporation synthesis [22], and spray pyrolysis [13]. Many of these methods have some
limitations for wide-scale production e.g., high working cost, small area deposition, need of sophisticated
instrumentation, etc.…
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Citation Excerpt :
…Since it was reported that In2S3 films grown on the amorphous glass substrates showed poor crystallinity compared to
those on the polycrystalline substrates [19], all samples for XRD analysis were deposited on polycrystalline Mo-coated
glass substrates. According to the XRD profiles, all as-prepared buffer layers exhibited polycrystalline features, and the
In2S3 film exhibited relatively low-intensity peaks at 2θ of 28.6°, 33.3°, and 48.19°, which are related to the (1 0 9), (0 0 1
2), (2 2 1 2) planes of a tetragonal structure (JCPDS: 25-0390) [20], whereas as-deposited CdS films exhibited high-
intensity peaks at 2θ of 26.9°, 44.8°, and 53.1° corresponding to their cubic structure (JCPDS: 01-080-0019) [21]. The XRD
profile of the In2S3/CdS double layer showed the characteristic diffraction peaks of both CdS and In2S3 layers even
though the intensity of peaks corresponding to thin In2S3 layer was relatively weak.…
https://www.sciencedirect.com/science/article/abs/pii/S0169433215008727?via%3Dihub 4/7
19/6/23, 3:14 Optical and structural study of In2S3 thin films growth by co-evaporation and chemical bath deposition (CBD) on Cu3BiS3 - ScienceDirect
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Citation Excerpt :
…However, the maximum band gap corresponds to the sample grown at 60 °C as it is shown in Table 3, this particular
behavior of the samples could be possible because of the partial covering of the substrate, as temperature increased,
deposition rate increased too. As a result, dissociation of complexes occurs quickly and there is not control on the
thickness and uniformity of the film, light is transmitted without being absorbed therefore transmittance average value is
increased [21,22]. The band gap energy values increased as the deposition time increases for all the samples, see Table 3.…
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Citation Excerpt :
…Second, this can be attributed to the hybridization of conduction and valence bands of SnS and In2S3 (see Fig. 6d)
phases. The direct band gap of In2S3 phase is about 2.8 eV [74,75]. This phenomenon is similar to that observed in the Ge-
and Sb-doped SnS [31].…
Show abstract
Citation Excerpt :
…Besides, many visible-light-driven photocatalysts few show activities on the degradation of TC due to its narrow band
gap. Efforts have been made by researchers to realize the photodegradation of TC under visible light such as C–N–S-
tridoped TiO2 [16], three-dimensional mesoporous multiwalled carbon nanotubes-Bi2WO6 [17], Fe-doped SrTiO3 [18],
Au/Pt/g-C3N4 [19], Ag/Ag3PO4/AC [20], Mn-doped SrTiO3 [21], Sr–Bi2O3 [22], In2S3 [23], Ag2O [24], and so on. Although
these photocatalysts have various merits in environmental procedures, to improve the low photon utilization, the
incomplete degradation and poor removal ratio in a cost efficient way are still the most intriguing challenges in terms of
the practical application.…
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Research article
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19/6/23, 3:14 Optical and structural study of In2S3 thin films growth by co-evaporation and chemical bath deposition (CBD) on Cu3BiS3 - ScienceDirect
Research article
Preface
Applied Surface Science, Volume 350, 2015, p. 1
Research article
Research article
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Research article
Effect of thermal annealing on physical properties of vacuum evaporated In2S3 buffer layer for
eco-friendly photovoltaic applications
Materials Science in Semiconductor Processing, Volume 40, 2015, pp. 26-34
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Research article
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19/6/23, 3:14 Optical and structural study of In2S3 thin films growth by co-evaporation and chemical bath deposition (CBD) on Cu3BiS3 - ScienceDirect
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