NTE2347

Silicon NPN Transistor

General Purpose, Medium Power
Description:
The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current,
fast switching applications and for power amplifiers.

Absolute Maximum Ratings:

Collector–Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation, Ptot
TA ≤ +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC ≤ +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W
TC ≤ +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICES VCE = 150V, VBE = 0 – – 1 mA
VCE = 100V, VBE = 0 – – 1 µA
VCE = 100V, VBE = 0, TC = +150°C – – 100 µA
Emitter Cutoff Current IEBO VEB = 6V, IC = 0 – – 1 mA
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0, Note 1 80 – – V
Collector–Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 500mA, Note 1 – – 1 V
Base–Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 500mA, Note 1 – – 1.6 V
DC Current Gain hFE IC = 2A, VCE = 2V, Note 1 40 – 120
IC = 2A, VCE = 2V, TC = –55°C, Note 1 15 – –
Transition Frequency fT IC = 500mA, VCE = 5V 50 – – MHz
Collector–Base Capacitance CCBO VCB = 10V, IE = 0, f = 1MHz – – 80 pF
Turn–On Time ton VCC = 20V, IC = 500mA, IB1 = 500mA – – 0.35 µs
Storage Time ts VCC = 20V, IC = 5A, IB1 = –IB2 = 500mA – – 0.35 µs
Fall Time tf – – 0.3 µs

Note 1. Pulse Test: Pulse Duration = 300µs, Duty Cycle = 1.5%.

 .370 (9.39) Dia Max

.355 (9.03) Dia Max

.260
(6.6)
Max

.500
(12.7)
Min

.018 (0.45)

Base

Emitter
Collector/Case

45°

.031 (.793)