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Impact of Temperature Variation on PV-module Parameters and Performance

Conference Paper · February 2001

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 Impact of Temperature Variation on PV-module Parameters and
Performance
Mohamed Ali Mussa*, Ibrahim M. saleh**
*Center for Solar Energy Studies, ** University of Tripoli
Fax. +218-21-3601108 P. O. Box 12932 Tripoli-Libya. E-mail mussa365@gmail.com

Abstract:
The operating temperature of photovoltaic modules is one of the key factors affecting the
electrical efficiency of individual cells and module, and thus, the efficiency of the whole PV
system. The solar energy absorbed by the module encapsulation material is converted to heat
and the radiant energy absorbed at the solar cell surface is converted partially to electrical
power and partially to heat. A high module temperature influences the module’s performance
through its effect on the module’s parameters. Although much work has been carried out to
study this phenomenon at the solar cell level, little investigations of the impact of high operating
temperatures have been conducted at the level of the PV-module as a whole. This paper
investigate the impact of the operating temperature on the module’s internal parameters and
thus on its performance. The I-V characteristics of six different module types were measured in
a continuous Sun Simulator under varying operating temperatures. All other conditions were
kept constant. From the obtained I-V curves parameters were extracted and estimated using an
analytical method. The effects of the operating temperature were assessed in terms of the
percent change per degree Celsius of each parameter. The results indicate considerable
influence of the operating temperature in all six modules tested. Variation in some parameters
of up to approximately 0.5% / °C were observed. Moreover, differences of individual modules of
the same type and technology were also found.
Key words : 1-

1- Introduction
The most important part of any photovoltaic system is its PV-Generator. Sensitive solar cells are
connected in series and encapsulated in glass-plastic compound structure forming what is been
known as PV-generator unit (Module). The optical, thermal and electrical performance of a
module must be of high quality, which in turn will make the PV-system stable and reliable for the
extended expected lifetime. High radiation has positive effect on the energy production, and in
other hand insulation and high ambient temperature causes high operating temperature.
The solar energy absorbed by the module encapsulation material is converted to heat and the
radiant energy absorbed by the solar cell is converted partially to electrical energy and partially
to heat [1].
This generated heat leads to an increase in the temperature of the cells incorporated into the
system, until thermal equilibrium is achieved between the module and the environment [9]. The
operating temperature of Photovoltaic modules is one of the key factors, which influence
electrical efficiency of individual cells and modules and thus the efficiency of the whole
Photovoltaic system [2]. The operating temperature of a PV cell is the result of the following
major effects:
1. Ambient temperature.
2. Fraction of solar power that is absorbed by the cell but not converted into electricity.
3. Heat exchange between PV module and the ambient.
The internal solar cell parameters such as photon-current, saturation current, series and shunt
resistance and finally diode ideality factor are influenced by the solar cell operating temperature
and so the output power of PV-module.
Much work has been done to study this matter at solar cell level, little work has been done on
the PV-module level. This paper will introduce an experimental work to investigate the
temperature effect only on the PV-module parameters and performance.

2- PV-Module Modeling
A photovoltaic module consists of many solar cells connected electrically by different
configuration. The solar cells in any module will not be of complete identical characteristics, and
this will make complexity for I-V curve prediction for the whole module, even if the characteristic
of individual solar cells are known. Yet certain assumptions has to be made to generalize solar
cell to analyze PV-modules performance. The assumptions, which will be, considered for solar
cell generalization areas follows:
1. All solar cells of the PV-module are identical.
2. Voltage drops in the conductors connecting solar cells are negligible.
3. Module configuration has only series connection.

The PV-module equivalent circuit of series configuration, assuming identical solar cells as
illustrated in figure- (1). PV-module Voltage V and current I, are given by the following
expressions:
Vmodule  Vcell .N s
(1)
I module  I cell
(2)
Where Ns are the number of series connected solar cells.

Figure- (1) series circuit configuration of PV-module (SEM)

From the series circuit configuration of PV-module shown in figure (1), we can drive the
following expression representing the voltage across solar cell diode related to the number of
solar cells and other parameters as;

Vj 
1
V  N s .I .rs  (3)
Ns
where V, I represents the voltage and current of PV-module.
Since the I-V equation of a single cell is given by:
 qV j  V j
I  I ph  I s exp  1 
 nkT  rsh
Then substituting equation (3) in the previous expression we get the PV-module current -voltage
relationship as,
 qV  I .N s .rs  V  I .N s rs  qV  IR s   V  IR s
I  I ph  I s exp   I ph  I s exp  1  (4)
 nkT.N s  N s .rsh  mkT  Rsh
where the new internal parameters can be defined as follows:
m=nNs , Rs= rs. Ns and ,Rsh= rshNs .Those parameters are going to be defined from now as
the internal or (intrinsic) parameters of PV-module.

3-Experiments Procedures: (PV Modules Characterization)

The I-V curve, of a particular illuminated PV device, is obtained by measuring and plotting the
terminal output voltage V versus current I, as the device is variably loaded by a passive or
active load. The standard technique is to sweep the curve, from the short- circuit current point
(0, Isc) to the open-circuit voltage point (Voc, 0) within the first quadrant region, in which the
device power is positive. Since the PV devices are light and temperature dependent, thus I-V
curve will be shifted accordingly. Therefore, Irradiance and temperature should be documented
when measuring or dealing with I-V curves. [4]

Measurements and set-up:

Six PV-modules were tested in temperature range (26 0C – 60 0C) within the steps of (2 0C) for
each I-V curve, their general specification are given in table- (1). Furthermore, These Modules
have different kind of solar cells with different area, different modules area and different
electrical performance, however, they all have series connection circuit configuration. [5]

Table- (1) PV-modules specification

Manuf. Name Comm.Name Manuf.Date No.Cells Cell’s type Encapsulation Test Name
ASE 100-DG-UR 1998 72 Multi - Glass-Epoxy-G ASE9031
ASE 100-DG-UR 1998 72 Multi- CRS Glass-Epoxy-G ASE9032
Kyosera KC60 KC60 1998 36 Multi- CRS Glass-EVA-PVF KC6021
Kyosera KC60 KC60 1998 36 Multi- CRS Glass-EVA-PVF KC6022
ASE MQ 36 D 1998 36 Mono-CRS Glass-EVA-G MQ3641
ASE MQ 36 D 1998 36 Mono-CRS Glass-EVA-G MQ3642

The characterization of these modules (I-V Characteristics) were obtained using the set-up
illustrated in Figure- (2). This set-up consists of continuos sun-simulator (SUSI 1), I-V curve
tracer, ESTI-sensor, temperature sensor (PT 100) and personal computer.
Sun – Simulator
( SUSI – 1 )

Lamps

ESTI-Sensor

PV-module
I–V PC
Curve
PT-100 Temp. Trac.
Sensor
Hydraulic – Pump

Figure- (2) PV-Module Characterization set-up

4- Mathematical Formulation:

4.1- PV-Module Parameters Extraction:

The PV-module (SEM) parameters equivalent circuit is given in figure- (1), which can be
represented by the same way as solar cell equivalent circuit. This circuit consists of current
generator represents photon current, one diode, series resistance and shunt resistance. At a
given illumination and temperature, the current voltage relationship is given by equation (4). It
has been shown by Kennerud [3], that the circuit internal parameters (m, Iph, Is, Rs, Rsh) at
particular temperature and illumination can be computed from the values of measured
parameters (Voc, Isc, Vmpp, Impp, Rs0, Rsh0) of measured I-V characteristic. The two parameters
(dynamic series and shunt resistance) can be defined as follows:
 dV dV
Rs 0   & Rsh 0  
dI V Voc dI I  I sc
Solving equation (4) using conditions at short-circuit point, open-circuit voltage point and
maximum-power point, and consider the parameters value for typical PV-device and making
some approximation [8], and then by solving for m in terms of the measured parameters we can
found the following:
Vm  I m Rs 0  Voc
m (5)
  
   
 Vm   Voc   I m 
VT ln  I sc   I m   ln  I sc   
 V 
  Rs 0   Rsh 
 sc
I  oc 

  Rsh 
Where VT = kT/q
The other parameters may the be found from the following expressions,
 V   V 
I s   I sc  oc . exp   oc  (6)
 Rsh   mVT 
mVT  V 
Rs  Rs 0  . exp  oc  (7)
Is  mVT 
 R   I R 
I ph  I sc 1  s   I s  exp sc s  1 (8)
 Rsh   mVT 
The first step for the internal parameters extraction was done by estimating the dynamic series
resistance and dynamic shunt resistance by taking the slop of the measured data points around
short-circuit current and open-circuit voltage regions. To estimate Rsh0 number of data points
were chosen equal to (0.75 Voc), and number of data points closed to maximum-power point
voltage were chosen to estimate the Rs0. The second step is to extract the PV-module internal
parameters given by equations (5-8) by using EXCEL SOFTWARE. The input data are the
measured parameters such as (Isc, Impp, Voc, and Vmpp) and the estimated dynamic series and
shunt resistance. Each extracted parameter was plotted versus temperature to show the
influence of temperature changes on that parameter this step was repeated for each tested PV-
module. Linear and exponential fit assumed to govern this behavior; the resulted fit equations
and regression coefficients also founded.

4.2-Theoretical I-V curves estimation:

The theoretical I-V curve computed by substituting the extracted parameters of PV- module by
five-point analytical method [1,2], into single-exponential diode model equation (4), with five
unknowns. Under the assumption that the extracted parameters are constant along the I-V
curve.
Theoretical current can be estimated using the iterative numerical analysis technique of
Newton’s method of successive approximation.
A Fortran program was written for numerical method (Newton-Raphson method) to estimate the
theoretical current. By taking the measured values of current as initial values to start the
iteration, this step was repeated for all data points of measured voltage. The resulted theoretical
I-V data and measured I-V data were plotted together to see the deviation between the two I-V
curves.

5- Results and Discussion

5.1- Intrinsic (internal) Parameters versus Temperature:
The extracted internal parameters (n, Iph, Rs, Rsh, Is) were plotted versus temperature in graphs
to show the relationship between these parameters and temperature variation as illustrated in
figure- (3). General assumption was considered that the parameters (Iph, Rs, Rsh and n) have a
linear relationship with temperature variation and exponential relationship assumed for the
saturation current (Is) with temperature. The resulted fit equations are given in table- (2).
Investigation the plots of those parameters shown in graphs in figure- (3), and the results given
in table (2), give the following observation:

Table- (2) Fit equations of PV-modules Parameters

Module Equation R2 Module Equation R2
ASE31 Iph=0.0027T+2.292 0.9049 ASE32 Iph=0.0028T+2.2123 0.8863
KC21 Iph=0.0019T+3.0475 0.8216 KC22 Iph=0.0023T+3.034 0.8184
MQ41 Iph=0.0023T+2.5091 0.9647 MQ42 Iph=0.0017T+2.4944 0.9188
ASE31 Is=4E-13*exp(0.1691 T) 0.9210 ASE32 Is=2E-14*exp(0.1754T) 0.8981
KC21 Is=2E-11* exp(0.117 T) 0.9312 KC22 Is=6E-13* exp(0.1033 T) 0.7425
MQ41 Is=6E-12*exp(0.1151T) 0.749 MQ42 Is=2E-12 * exp(0.1087T) 0.7354
ASE31 Rs=0.0011T+1.2969 0.1152 ASE32 Rs=0.0028T+1.3221 0.4298
KC21 Rs=0.0014T+0.5583 0.5237 KC22 Rs=0.0029T+0.5244 0.8726
MQ41 Rs=0.0015T+0.6651 0.2609 MQ42 Rs=0.0018T+0.6676 0.4653
ASE31 Rsh=-0.1399T+330.41 0.0394 ASE32 Rsh=-0.1389T+347.41 0.0214
KC21 Rsh=-1.5514T+312.12 0.3187 KC22 Rsh=-1.6639T+237.33 0.6591
MQ41 Rsh=-1.0349T+172.02 0.6661 MQ42 Rsh=-0.7496T+170.08 0.3258
ASE31 n=0.0005T+0.8975 0.0693 ASE32 n=-5E-05T+0.8046 0.0009
KC21 n=-0.0009T+1.0178 0.2807 KC22 n=-0.002T+0.907 0.512
MQ41 n=-0.0014T+0.9923 0.1964 MQ42 n=-0.0018T+0.9624 0.3268

Photon-current (Iph): Modules with multicrystalline solar cell shows decreasing at starting of
measurements and then start to increase, while monocrystalline modules don’t shows this
behavior and it starts to increase from the beginning. Generally photon-current shows slight
increase with temperature increase. Photon current of the ASE90 modules shows shift, this shift
approximately constant in the measured temperature range and the rate of increases
approximately the same of the two modules. Generally it is known that the photon current is a
function in Irradiance, it is clear that the shift in photon current of all PV-module is not due the
small Irradiance variation effect. But it is clear that the main reason is the non-identical solar
cells of PV-modules of same technology. The main term govern the photon current is the first
term of equation (8), which includes the short circuit current, multiplied by the ratio between
series resistance and shunt resistance. As this ratio become small the photon current becomes
closed to short-circuit current.
Saturation-current (Is): Plots of saturation current (Is) versus the temperature of all PV-modules
are given in figure- (3). The PV-modules of the same kind don’t have the same values of
saturation current. Physically the saturation current represented by equation have many
parameters depends most strongly on the doping concentration, diffusion length, lifetime of
minority carriers and intrinsic carrier concentration. The parameter depends most strongly on
the choice of semiconductor material is the square of intrinsic concentration (ni 2). Increasing in
saturation current with temperature have an effect on the open-circuit voltage, the increasing in
Voc requires that Iph be increased and Is be decreased. Our experimental results shows that (I sc
or Iph) have slight increase with temperature increase, where the saturation current shows an
increase with temperature increase. The experimental results shows that the open-circuit
voltage decreased by an average amount of about 10% for the range of measured temperature,
while the short-circuit current have a slight increase. These results indicated that the open-
circuit voltage decrease happen due the increase of saturation current with temperature.
Series Resistance (Rs): Series resistance plots given in figure- (3), shows scattering of extracted
data points along the temperature range of measurements. The plot shows an overall trend for
all PV-modules series resistance increase with temperature increase with generally poor
correlation coefficients .The rate of change of series resistance values with temperature is not
the same for modules of same kind and different kinds. By referring to equation (7), we can see
that the second term of the right hand side contains an exponential term multiplied by other
term, both of these terms shows the effect of measured values changes by the temperature
effect on the values of series resistance of PV-module.
The experimental results show that series resistance of all PV-module was increased by
temperature increase. This increase in series resistance will effect the fill factor of PV-module
and then the maximum-power point which agree with the experimental results that shows the fill
factor of tested PV-modules was reduced by an average amount of about 5%.
Shunt resistance (Rsh): The shunt resistance of tested PV-modules was estimated graphically
by taking the slope around short-circuits current region, in this model the dynamic shunt
resistance equals to shunt resistance. The extracted shunt resistance data points plots for all
PV-modules are given in figure- (3). Shunt resistance plots shows scattering of estimated data,
linear fit shows an over all trend of all PV-modules shunt resistance decrease with temperature
increase, the amount of decrease with temperature increase is not show the same change for
the PV-modules of the same kind. The shunt resistance of modules have the same type shows
a shift in values between them, also the rate of change with the temperature are not the same
for the modules of the same kind. The first part of linear fit equation has small effect compared
with second part of that equation, this means that the changes in shunt resistance due to
temperature effect are very small or the shunt resistance by this model have small sensitivity to
the temperature variation. The ratio between series resistance and shunt resistance increased
by decreasing the value of shunt resistance. It is well known that the shunt resistance
decreasing effect the fill factor of PV-module, and as we have mentioned the fill factor has
decreased by an average amount of 5%, then the increase of series resistance and slight
decrease in shunt resistance have common effect in the value of fill factor.
Diode Ideality Factor (n): Plots of extracted data points of diode ideality factor were given in
figure- (3). The plots shows scattering along the temperature range, all PV-module diode
ideality factor shows a decrease with temperature increase except, ASE module shows different
behavior with increase in the first one and slight decrease in the second one. All PV-modules
show diode ideality factor of value one or close to one (ideal diode ideality factor equal to one).

5.2- Deviation between Measured and Theoretical I-V Characteristics:

Theoretical I-V characteristics were estimated as explained in section (4.2) utilizing the
extracted parameters explained above. Plots of both I-V curves shows difference between
measured and fitted characteristics, estimation of the fit error is necessary to show the degree
of fit given by the extracted parameters. This error was estimated by the criteria given by
equation (9). [2]
Area
 .100% (9)
Area
The analysis was done for six or five I-V curves for each PV-module at different ranges of
operating temperature. The first, last and three to four in between of measured I-V curves. The
analyzed data gives the following trends:
- Increasing the operating temperature increased the percentage error % between
measured and theoretical I-V curves of the most PV-modules, the maximum percentage
error not exceed 0.7%.
- Area of measured I-V curves decreased by increasing temperature
- The percentage error represents the degree of fitting between the measured and
theoretical I-V curves.
The difference between measured and theoretical currents was plotted versus measured
voltage to show the region of current deviation as illustrated in figure (4). The error between
measured and theoretical I-V curves, indicates changes of the extracted parameters values in
some regions of I-V curve.
From the ploted I-V curves we can draw the following:
- All PV- modules of different size of solar cells, different kinds of solar cells
(multicrystalline-monocrystalline) and different encapsulation materials, had similarly
shaped error plots.
- At high current regions, (i.e. in the range from 0 volt to ~ Vmpp), extracted parameters
gives good fit. The difference between the measured and calculated current not exceeds
(0.025 A), negative or positive.
- At low current region, (i.e. in the voltage ranging from ~ Vmpp to Voc), the current
difference increased to the values of about (0.095 A) and have its maximum peaks
approximately in the middle between maximum power point voltage and open-circuit
voltage. This peak is positive which means that the theoretical I-V curve shifted inside the
measured I-V curve in that region.
- It is clear that the open-circuit voltage point shifted inside by increasing temperature,
which means degradation effect by temperature increase.
The overall percentage changes of internal parameters per degree Celsius due to temperature
effect were estimated by the difference between the first and last measurement values
referenced to the first measurement value and divided by the temperature variation range.
The results are given in table- (3).

Table- (3)-Internal Parameters Changes Due Temperature Effect

Module T [°C] n  Iph [A]  Is [A]  Rs [] Rsh []
ASE31 28.2 0.003 0.051 2.9E-09 0.080 0
%/ C0 0.01% 0.08% 386.47% 0.21% 0.00%
ASE32 26.7 -0.001 0.061 1.5E-10 0.103 -11.49
%/ C0 0.00% 0.10% 490.47% 0.28% -0.12%
KC21 29.8 -0.039 0.034 1.4E-08 0.052 -89.43
%/ C0 -0.13% 0.04% 84.76% 0.29% -0.90%
KC22 30.6 -0.033 0.042 2.1E-10 0.099 -35.93
%/ C0 -0.13% 0.04% 196.42% 0.54% -0.63%
MQ41 30.2 -0.107 0.075 1.9E-09 0.107 -36.89
%/ C0 -0.35% 0.10% 21.55% 0.53% -0.82%
MQ42 30.4 -0.085 0.053 4.9E-10 0.066 -37.35
%/ C0 -0.30% 0.07% 37.57% 0.30% -0.75%

The results tabulated in the previous table show the overall percentage changes of the internal
parameters of all PV-modules, and the percentage change of each parameter per degree
Celsius. Diode ideality factor of all kinds of PV-modules showed a decrease by increasing
temperature except for ASE-module, which showed slight increase for the first module and no
change for the second module as overall. KC60 PV-modules showed a decrease of an amount
of (-0.13, -0.13 %/0C) for both type. MQ36 PV-modules of monocrystalline solar cells have the
highest percentage decrease value of diode ideality factor of (-0.35, -0.30 %/0C). Photon
current has slight increase due the temperature increase effect the amount of increase per
degree Celsius is given as (0.08, 0.1, 0.04, 0.04, 0.1, 0.07), it is clear that module of type KC60
has the lowest value of increase compared with other kinds. The saturation current shows the
highest percentage increase per degree Celsius as (386.5, 490.5, 84.8, 196.42, 21.55 and
37.57), for the different kinds of PV-modules respectively, monocrystalline solar cells shows the
lowest value of percentage increase, all modules of the same kind don’t show identical values of
increase. Series resistance of all kinds shows increase by temperature effect, the amount of
increase as (0.21, 0.28, 0.29, 0.54, 0.53 and 0.30 %/ 0C), this increase in series resistance is
not the same for the modules of the same kind. Shunt resistance shows slight decrease for all
PV-modules except the first module of kind ASE, shows no decrease or increase, the amount of
percentage changes per degree Celsius is (0.0, -0.12, -0.9, -0.63, -0.82 and –0.75).

6- PV-Modules Performance at different temperature:

I-V performance measurements at different temperatures yields all characteristic PV-modules
parameters such as (Voc, Isc, Impp, Vmpp, FF, Pmpp. and ).
Investigating the measured parameters can give the indication that parameters are temperature
dependent. The generated results given in table (4), shows the percentage variation of each
parameter per degree Celsius for each PV-module.
The results given in this table shows the percentage increasing or decreasing of each
parameter per degree Celsius considering the changes between the first measurement at the
beginning and the last measurement normalized to the first measurement and divided by the
temperature range changes.
All parameters shows degradation by increasing temperature except short-circuit current (Isc)
and maximum-power point current (Immp) as given in table- (4). Power and efficiency shows the
highest decreasing with temperature increasing as given in table- (4), (0.41 to 0.45 %/0C) for
power and (0.42 to 0.47 %/0C) for efficiency.
Comparing the results of power and efficiency degradation with temperature for all PV-modules
it shows a difference not more than (0.05 %/0C), considering the different type of solar cells and
size of modules and encapsulate materials. Comparing those results with other results in
literature, references [6,7] gives the values of 0.5 %/0C decreasing of power and efficiency.

Table- (4) The percentage parameters variation with temperature

Module T[C] Voc%/°C Isc%/°C Vmpp%/°C Impp%/°C Pmpp%/°C FF%/°C %/°C
ASE9031 28.2 -0.377 0.074 -0.490 0.050 -0.450 -0.152 -0.465
ASE9032 26.7 -0.371 0.098 -0.500 0.094 -0.424 -0.150 -0.457
KC6021 29.8 -0.327 0.033 -0.485 0.041 -0.450 -0.168 -0.458
KC6022 30.6 -0.328 0.039 -0.453 0.010 -0.448 -0.172 -0.455
MQ3641 30.2 -0.339 0.088 -0.427 0.023 -0.410 -0.160 -0.435
MQ3642 30.4 -0.334 0.063 -0.430 0.026 -0.410 -0.141 -0.420
By considering the last measurement temperature as the operating temperature of the PV-
module then we can estimate the power and efficiency losses due to temperature raising from
the room temperature (25 0C) as given in the following table- (5);

Table- (5) Percentage power and efficiency losses by temperature variation

Module-Type  T [C] Pmpp%/C Pmpp loss % %/C  loss %
ASE9031 30.5 -0.450 13.73 -0.465 14.20
ASE9032 28.0 -0.424 11.90 -0.457 12.80
KC6021 32.1 -0.450 14.45 -0.458 14.70
KC6022 32.3 -0.448 14.50 -0.455 14.70
MQ3641 31.1 -0.410 12.75 -0.435 13.53
MQ3642 31.1 -0.410 12.75 -0.420 13.10

7-Conclusion

The I-V characteristics of six different module were measured in a continuous Sun Simulator
under varying operating temperatures to investigate the impact of the operating temperature on
the module’s internal parameters and its performance From the experimental results in this work
we can conclude the following:
❖ All six modules showed power degradation with average percentages of (0.45, 0.44 and
0.41) for ASE, KC60 and MQ36 PV-modules respectively. The overall changes due to
temperature increase participate in power degradation of PV-modules. All module of
different kinds showed a decrease in maximum-power of about 0.45%/°C.
❖ Different PV-modules parameters for the same type of modules. This means that the
PV-modules of the same type have non-identical solar cells. Which will cause a
mismatch between solar cells and PV-modules and its effect is described as source of
power degradation.
❖ Open-circuit voltage of the six modules showed a dramatic decrease with temperature
increase, in the range of (-.327 to -.377 %/0C).
❖ Fill factor has decreased with temperature increase, in the range of (-.141 to -.172
%/0C). all PV-modules that showed increase of series resistance and decrease in shunt
resistance.
❖ Maximum power point of the six modules showed a decrease in (Pmpp), in the range of
(-.41 to -.45 %/0C).
❖ Efficiency also effected by temperature and of all six modules showed a decrease in
the range of (-.42 to -.465 %/0C).
 Both maximum-power point and efficiency degradation due to the temperature effect transferd
to standard test conditions and the results showed power and efficiency losses figures as
given in literature.

References:
1. Charles P., Minning and et. al. .1981, “ Thermal and optical performance of
encapsulated systems, for flat plate photovoltaic modules”, 15 IEEE Photovoltaic
Specialist Conference .
2. John S. Griffith, et. al., 1981,‘‘Some Tests of Flate Photovoltiac Module Cell
Temperature In Simulated Field Conditions‘‘, 15th IEEE PVSC.
3. D. S. H. Chan, J. R. Phillips and J. C. H. Phang, “A Comparative Study Of Extraction
Methods For Solar Cell Model Parameters”, Solid-State Electronics, Vol. 29, No. 3,
pp. 329-337,.
4. Kenneth L. Kennerud, “Analysis Of Performance Degradation In CdS Solar Cells”,
IEEE Transactions On Aerospace And Electronic systems, Vol. AES-5, No. 6 (1969).
5. Don Kilfoyle, “A Numerical Analysis Method For Computer Modeling Photovoltaic I-V
Curves”.
6. M. Mussa, 2000, ‘‘Investigation of The Impact of Some Environmental Conditions on
Photovoltaic Modules Performance‘‘, Msc. Thesis EE Dept. El-Fath University,
Tripoli-Libya.
7. James F. Coakley, et. al., May 1984 ‚‘‘Cell Temperatures In Terrestrial Photovoltaic
Modules Effect of Design Factors‘‘, 17th IEEE PVSC.
8. Jacob C. H. Phang and Daniel S. H. Chan, (1986) ,“ A New Curve Fitting error
Criterion For Solar Cell I-V Curve Characteristics”, 18 IEEE Photovoltaic Specialist
Conference, (1985).
9. Werner Knaup, 1992,‘‘Thermal Description of Photovoltiac Modules‘‘, 11th E.C.
Photovoltiac Solar Energy Conference, Montreux.
10. N. A. Al-Rawi, et. al., 1988,‘‘Heat Distribution In Bi-Glass Encapsulation Silicon Solar
Cell‘‘, Solar Cells, 25, pp.39-51.
 Iph-All modules Rs-All modules

3.2
3.1 1.6
3.0 1.5
2.9 1.4
Iph [Amp]

2.8 1.3

Rs [ohm]
2.7 1.2
2.6 1.1
2.5 1.0
0.9
2.4 0.8
2.3 0.7
2.2 0.6
2.1 0.5
24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58
T [C] T [C]
Iph-ASE31 Iph-ASE32 Iph-KC21 Rs-ASE31 Rs-ASE32 Rs-KC21
Iph-KC22 Iph-MQ41 Iph-MQ42 Rs-KC22 Rs-MQ41 Rs-MQ42

n-All modules

1.03
1.01
0.99
n-diode ideality

0.97
0.95
0.93
factor

0.91
0.89
0.87
0.85
0.83
0.81
0.79
0.77
0.75
24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58
T [C]
n-ASE31 n-ASE32 n-KC21
n-KC22 n-MQ41 n-MQ42

Is-All modules Rsh-All module

1.8E-08
400
1.6E-08
1.4E-08 350
1.2E-08
Rsh [ohm]

300
Is [Amp]

1.0E-08
8.0E-09 250
6.0E-09 200
4.0E-09
150
2.0E-09
0.0E+00 100
24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58
T [C] T [C]

Is-ASE31 Is-ASE32 Is-KC21 Rsh-ASE31 Rsh-ASE32 Rsh-KC21

Is-KC22 Is-MQ41 Is-MQ42 Rsh-KC22 Rsh-MQ41 Rsh-Mq42

Figure-(3)- Extracted Parameters-(All PV-Modules)

 Current deviation-[ASE9031-(T=diff.)] Current deviation-[ASE90-32 (T=diff.)]

0.08 0.09
0.07 0.08
0.06 0.07
0.05 0.06

Im-Ic-[Amp]
0.05
Im-Ic [Amp]

0.04 0.04
0.03 0.03
0.02 0.02
0.01 0.01
0.00 0.00
-0.01 0 4 8 12 16 20 24 28 32 36 40 44
-0.01 0 4 8 12 16 20 24 28 32 36 40 44 -0.02
-0.02 -0.03
-0.03 -0.04
-0.04
Vm [Volt] Vm [Volt]
T=27.3 T=29.6 T=33.2 T=40.7 T=45.2 T=55.5 T=26.3 T=29.0 T=34.2 T=37.2 T=45.6 T=53.0

Current Deviation-[KC60-21(T=diff)] Current deviation-[KC

6022(T=diff.)]

0.10 0.10
0.09 0.09
0.08 0.08
0.07 0.07
0.06 0.06
0.05 0.05
Im-Ic [Amp]
Im-Ic [Amp]

0.04 0.04
0.03 0.03
0.02 0.02
0.01 0.01
0.00 0.00
-0.01 -0.01
-0.02 0 2 4 6 8 10 12 14 16 18 20 22 -0.02 0 2 4 6 8 10 12 14 16 18 20 22
-0.03 -0.03
-0.04 -0.04
-0.05 -0.05
-0.06 -0.06
Vm [Volt] Vm [Volt]
T=27.3 T=30.5 T=38.5 43.9 T=51.7 T=57.1 T=26.7 T=30.4 T=38.4 T=46.2 T-50.5

Current deviation [MQ36-41(T=diff.)] Current deviation [MQ36-42(T=diff.)]

0.10 0.10
0.09 0.09
0.08 0.08
0.07 0.07
0.06 0.06
Im-Ic- [amp]

0.05
Im-Ic [Amp]

0.05
0.04 0.04
0.03 0.03
0.02 0.02
0.01 0.01
0.00 0.00
-0.01 0 2 4 6 8 10 12 14 16 18 20 22 -0.01 0 2 4 6 8 10 12 14 16 18 20 22
-0.02
-0.02
-0.03
-0.03
Vm [Volt]
Vm [Volt]
T=25.9 T=32.9 T=40.3 T=49.2 T=56.1 T=25.7 T=31.9 T=40.2 T=42.3 T=56.1

Figure-(4)- Current deviation-different Tempreture-(All PV-Modules)

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