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AVR +
and controlled continuously by a dedicated PID controller to U 1ref
provide a fast dynamic de-excitation during loads rejections
or excitation shutdowns. An excitation H∞ voltage regulator
is also designed by considering the de-excitation system as Fig. 1. Schematic of the Standard Brushless Excitation system.
perturbations. Consequently, the stability of the system is
ensured during the dynamic operation of the discharge system.
A comparison between the SBE and the proposed de-excitation is seen that the control strategies cannot reduce the voltage
system is presented and analyzed. Realistic simulation results generator overshoot because of the intrinsic limitation related
show significant improvement in the dynamic regulation of
the generator terminal voltage in terms of voltage overshoot, diode bridge which is unable to deliver negative excitation
response time and stability. voltages. The authors in [8] proposed a self de-excitation
structure based on inserting a discharge resistor connected
Index Terms—Brushless excitation system, feedback control, between the rotating diode bridge and the main machine
H∞ control, PID control, synchronous generators, state space field winding via a transistor switch. This solution improved
modeling. significantly the generator behaviour during excitation stop.
However, the proposed solution is only provided for a quick
I. I NTRODUCTION excitation shutdown. In this paper, we will study a new de-
excitation system for a quick excitation shutdown and a real
Standard Brushless Excitation (SBE) system includes an time regulation of the generator voltage. The proposed system
inverted synchronous generator called the Exciter Machine is presented by Fig. 2. It is based on a IGBT connected in
(EM) and a uncontrolled rotating diode bridge rectifier that parallel with a non linear discharge resistor. The IGBT is
excites the synchronous generators. Fig. 1 shows a repre- controlled by a PID regulator. Consequently, the proposed
sentation of a synchronous generator (SG) with brushless Advanced Brushless Excitation (ABE) includes two voltage
excitation system. The main advantage of this structure is regulators. The standard regulator based on H∞ control law
the elimination of the power ring-brush system on the rotor and called the automatic voltage regulator (AVR) controls the
winding of the SG, which reduces maintenance costs. Some excitation of the exciter machine. The new proposed regulator
papers [1], [2], [3] have shown that the performances of SBE controls the IGBT opening and closing.
systems are limited by the impossibility to de-excite very
fast the generator as the rotating diode bridge is unable to
II. DESCRIPTION OF THE NEW EXCITATION
deliver negative excitation voltage. This reduces the dynamic
behaviour of the generator voltage regulation during load As presented by Fig. 2, the new excitation system includes
shedding and may induce high voltage overshoot on the ter- two closed loops:
minal of the SG [3]. Researchers presented advanced control ∙ First, the main control loop is based on the (AVR). The
strategies to improve the dynamic of the voltage regulation voltage reference (𝑈 1𝑟𝑒𝑓 ) given to the AVR is equal
loop [4], [5], [6], [7]. However, during loads rejections, it to the generator rated voltage. The AVR design can be
based on PID law or advanced control strategies (e.g.
A. Barakat is with the Department of Electrical & Computer Engineering, 𝐻∞ , adaptive, etc.) [7], [9], [10]. In this study, we
Beirut Arab University, Lebanon (e-mail: a.barakat@bau.edu.lb).
S. E. Chouaba is with DAC Laboratory, Setif1 University, Algeria. (e-mail: used an H∞ voltage regulator in the SBE and the ABE
seif.chouaba@univ-setif.dz). systems.
𝑑𝑣𝑞𝑝 Controller +
𝑖𝑞1 = 𝑖𝑞𝑝 − 𝐶1 𝜔𝑒𝑝 𝑣𝑞𝑝 − 𝐶1 (1c) U 2ref
𝑑𝑡
𝑑𝑖𝑑𝑝
0 = −𝑣𝑑𝑝 − 𝑅𝑠 𝑖𝑑𝑝 + 𝐿𝑞 𝜔𝑒𝑝 𝑖𝑞𝑝 − 𝑀𝑠𝑄 𝜔𝑒𝑝 𝑖𝑄 − 𝐿𝑑
𝑑𝑡 Fig. 2. Schematic of the Advanced Brushless Excitation system.
𝑑𝑖𝑓 𝑑𝑖𝐷
+ 𝑀𝑠𝑓 + 𝑀𝑠𝐷 (1d)
𝑑𝑡 𝑑𝑡 the opening and closing of the IGBT, we will represent
𝑑𝑖𝑞𝑝 the negative excitation structure (IGBT with the discharge
0 = −𝑣𝑞𝑝 − 𝑅𝑠 𝑖𝑞𝑝 − 𝐿𝑑 𝜔𝑒𝑝 𝑖𝑑𝑝 + 𝑀𝑠𝑓 𝜔𝑒𝑝 𝑖𝑓 − 𝐿𝑞 resistor) by a variable voltage 𝑉𝑅𝑑 and it will be considered
𝑑𝑡
𝑑𝑖𝑄 as an exogenous input. According to the circuit shown in the
+ 𝑀𝑠𝐷 𝜔𝑒𝑝 𝑖𝐷 + 𝑀𝑠𝑄 (1e) fig.2. We can write the equation (1f) as following:
𝑑𝑡
𝑑𝑖𝑓 𝑑𝑖𝑑𝑝
0 = −𝑘1 𝑀𝑠𝑒 𝜔𝑒𝑒 𝑖𝑒𝑥𝑐 + 𝑎𝑖𝑓 + 𝐿𝑓 − 𝑀𝑠𝑓 𝑑𝑖𝑓 𝑑𝑖𝑑𝑝 𝑑𝑖𝐷
𝑑𝑡 𝑑𝑡 𝑉𝑅𝑑 = −𝑘1 𝑀𝑠𝑒 𝜔𝑒𝑒 𝑖𝑒𝑥𝑐 +𝑎𝑖𝑓 +𝐿𝑓 −𝑀𝑠𝑓 +𝑀𝑓 𝐷 (2)
𝑑𝑖𝐷 𝑑𝑡 𝑑𝑡 𝑑𝑡
+ 𝑀𝑓 𝐷 (1f)
𝑑𝑡 with
𝑑𝑖𝐷 𝑑𝑖𝑓 𝑑𝑖𝑑𝑝 {
0 = 𝑅 𝐷 𝑖𝐷 + 𝐿 𝐷 + 𝑀𝑓 𝐷 − 𝑀𝑠𝐷 (1g) 0 (when the IGBT is close) or
𝑑𝑡 𝑑𝑡 𝑑𝑡 𝑉𝑅𝑑 =
𝑑𝑖𝑄 𝑑𝑖𝑞𝑝 −𝑅𝑑 𝑖𝑓 (when the IGBT is open)
0 = 𝑅 𝑄 𝑖𝑄 + 𝐿 𝑄 − 𝑀𝑠𝑄 (1h)
𝑑𝑡 𝑑𝑡
This model has several parameters with: The model given by (1) combined with the equation (2) can
∙ 𝑅𝑒 and 𝐿𝑒 are the resistance and inductance of the EM
be represented by:
main field winding. 𝑈 = 𝑅𝑋 + 𝑀 𝑋˙ (3)
∙ 𝑅𝑠 , 𝐿𝑓 and 𝑅𝑓 are the stator resistance, the inductance
and resistance of the main field winding; ( )𝑇
𝑈 = 𝑣𝑒𝑥𝑐 , 𝑖𝑑1 , 𝑖𝑞1 , 0, 0, 𝑉𝑅𝑑 , 0, 0 and
∙ 𝐿𝑑 and 𝐿𝑞 are direct and transverse stator main induc- ( )𝑇
𝑋 = 𝑖𝑒𝑥𝑐 , 𝑣𝑑𝑝 , 𝑣𝑞𝑝 , 𝑖𝑑𝑝 , 𝑖𝑞𝑝 , 𝑖𝑓 , 𝑖𝐷 , 𝑖𝑄 .
tances;
∙ 𝑅𝐷 , 𝑅𝑄 are dampers resistances; 𝐿𝐷 and 𝐿𝑄 are direct with 𝑖𝑑1 and 𝑖𝑞1 are load currents in dq frame. The voltage
and transverse dampers inductances; and current of the EM main field winding are, respectively,
∙ 𝑀𝑠𝑓 is mutual inductance between direct stator winding 𝑣𝑒𝑥𝑐 and 𝑖𝑒𝑥𝑐 . The variables 𝑣𝑑𝑝 , 𝑣𝑞𝑝 , 𝑖𝑑𝑝 and 𝑖𝑞𝑝 are voltages
and main field one; 𝑀𝑓 𝐷 is mutual inductance between and currents in 𝑑𝑞 frame and 𝑖𝐷 and 𝑖𝑄 that represent the
main field winding and direct damper one; direct and transverse dampers currents. 𝑖𝑓 is current of the
366
main field winding. The model can be written in the state Augmented plant
𝑋˙ = 𝐴𝑋 + 𝐵1 𝑊1 + 𝐵2 𝑈1 Controller
(5)
𝑌 = 𝐶𝑋
Where Fig. 4. Block diagram of the H∞ configuration.
⎡ ⎤
𝑖𝑑1
𝑊1 = ⎣ 𝑖𝑞1 ⎦ , 𝑈1 = 𝑣𝑒𝑥𝑐 ,
w z
𝑉𝑅𝑑
⎡ ⎤𝑇
0 1 0 0 0 0 0 0 Augmented plant
𝐵1 = 𝐵 ⎣ 0 0 1 0 0 0 0 0 ⎦ , u y
0 0 0 0 0 1 0 0
[ ]𝑇
𝐵2 = 𝐵 1 0 0 0 0 0 0 0 ,
[ ]
0 1 0 0 0 0 0 0 H1
𝐶= .
0 0 1 0 0 0 0 0 Controller
367
TABLE I
block is given by: PARAMETERS OF THE SG AND EM ( RESISTANCES IN Ω, INDUCTANCES
( ) IN M H).
1 𝑁𝑠
𝑢𝑃 𝐼𝐷 (𝑠) = 𝑃 1 + 𝐼( ) + 𝐷( ) (6) Characteristics of the SG (rated apparent power 11.2kVA)
𝑠 𝑠+𝑁
Poles 𝑅𝑠 𝑅𝑓 𝐿𝑓 𝐿𝑑 𝑀𝑠𝑓 𝐿𝑞
where 𝑠 is a complex number frequency parameter of the 4 0.71 2.06 695 63.6 200.5 38.6
𝐿𝐷 𝐿𝑄 𝑀𝑓 𝐷 𝑀𝑠𝐷 𝑀𝑠𝑄 𝑅𝐷 𝑅𝑄
0.0685 0.0236 6.7 2 0.9 8.6e-4 9.9e-4
U 2ref Generator Characteristics of the EM
+
PID
Direct orders to IGBT Poles 𝑅𝑠𝑒 𝑅𝑒 𝐿𝑒 𝐿𝑑𝑒 𝑀𝑠𝑒 𝐿𝑞𝑒
- PWM
8 0.26 24.5 1750 5.8 89 3.1
Umes Synchronous
Controller IGBT Generator
Rd
From exciter
machine A. Excitation stop
VR
d SG Variable
Load
During these tests, the generator is unloaded and operates
at rate voltage. Suddenly, the generator operator asks to stop
r.m.s value
Voltage measurement
the excitation (i.e. normal stop order or trip order sent by
protection systems). In ABE, when the excitation system
receives a stop order, an order will be sent directly to the
Fig. 6. Block diagram of the PID de-excitation control system. rotating IGBT to open. The DC chopper associated with the
exciter machine will be controlled to deliver a zero excitation
Laplace transform of the inputs and the outputs. The regu- voltage. In SBE, the DC chopper associated with the exciter
lator input includes the error signal, which is the difference machine will be only controlled to deliver a zero excitation
between the reference value (𝑈 2𝑟𝑒𝑓 ) and the measured gener- voltage.
ator voltage (𝑈𝑚𝑒𝑠 ). The PID regulator is the combination of The generator voltage (r.m.s., p.u.) is presented in fig.
the three basic actions P, I and D. A first-order pole filter the 7. As we can see, compared with SBE structure the de-
derivative action. The filter coefficient N sets the location of excitation duration using a controlled non linear discharge
the pole in the derivative filter. Noting that in this work, PID resistor decreases significantly. The de-excitation time (at
controller gain parameters are set in order to have a trade-off 63%) for ABE structure using the non linear discharge
between performances and stability of the system. resistor, is reduced from 429 ms to 100 ms so is reduced
Non linear resistances are widely used in field discharge with ratio of 4.
circuits with Crowbars in order to perform a quick shutdown
of the excitation of the generator [16], [17], [18], [19]. Normal Stop De-excitation
Noting that the non linear discharge resistor decreases the 1 SBE
de-excitation time significantly. So, in this work, the used ABE
0.9
discharge resistor is a non linear one. Inspired from different
configurations control schemes of excitation systems, it is 0.8
possible to send the opening and closing orders to the ro- 0.7
tating IGBT via wireless communication, brush ring system, 0.6
U SG [pu]
0.3
III. SIMULATION AND RESULTS 0.2
In the following, in order to evaluate the dynamic perfor- 0.1
mance of the proposed new excitation structure (Advanced
0
Brushless Excitation) two types of tests are realized:
1 1.2 1.4 1.6 1.8 2 2.2 2.4
1) Fast de-excitation after a normal stop order;
Time (s)
2) Dynamic de-excitation during sudden loads shedding.
The tests presented in this paper were carried out on an Fig. 7. r.m.s value of the main generator voltage during an excitation stop
11.2𝑘𝑉 𝐴 synchronous generator. The parameters of the SG order.
and the EM are listed in the table I. The discharge resistor
used is a non linear one (Metal-Oxid (ZnO) varistors). Figure 8 shows the excitation voltage of the generator
The ABE and SBE systems are tested with a brushless main field winding (field voltage). In SBE, it is not possible
synchronous generator model developed in Matlab/Simulink to obtain a negative excitation voltage. In ABE, when the
and validated with real experimental test bench [11]. In order IGBT opens, the negative forcing voltage gives a mean to
to present clearly the systems responses, we will present the rapidly dissipate the field energy of the excitation system
r.m.s or root mean square voltage (per unit). via the discharge resistor. These primary results can be used
368
Shedding 100 0.8
1
SBE
1.12
0 ABE
1.1
−1
0 1.08
−2
U SG [pu]
U f [pu]
−2 1.06
−3
−4 −4 1.04
−5 −6 1.02
1 1.02 1.04 1.06
−6 ABE 1
SBE
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2
Time (s) Time (s)
Fig. 8. Rotor voltage of the main generator during an excitation stop order. Fig. 9. r.m.s voltage (p.u.) during step load change (shedding), a load that
consumes the 100% of the apparent power with a 0.8 power factor.
1.1
B. Dynamic de-excitation
U SG [pu]
369
Shedding 100 0.6 Impact 100 0.8
1.05
1.14 ABE
SBE
1.12
1
1.1
1.08
U SG [pu]
0.95
U SG [pu]
1.06 SBE
ABE
1.04 0.9
1.02
0.85
1
0.98
1.6 1.7 1.8 1.9 2 2.1 0.8
1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4
Time (s)
Time (s)
Fig. 11. r.m.s voltage (p.u.) during step load change (shedding), a load that
consumes the 100% of the apparent power with a 0.6 power factor. Fig. 13. r.m.s voltage (p.u.) during step load change (impact), a load that
consumes the 100% of the apparent power with a 0.8 power factor.
1.14 0.98
1.1 0.94
U SG [pu]
1.08
0.92
1.06
0.9
1.04
0.88
1.02
0.86
1
0.84
0.98
1.6 1.7 1.8 1.9 2 2.1 2.2 0.82
1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4
Time (s)
Time (s)
Fig. 12. r.m.s voltage (p.u.) during step load change (shedding), a load that
consumes the 150% of the apparent power with a 0.8 power factor. Fig. 14. r.m.s voltage (p.u.) during step load change (impact), a load that
consumes the 100% of the apparent power with a 0.3 power factor.
performance of the SG during the load shedding tests. Table example, Figs. 13, 14). This is an expected proper behavior
III shows a sum up of the improvement obtained with ABE of ABE system as it is mainly used to improve the system
system. Thus, the controlled non linear discharge resistor con- dynamic during de-excitations.
siderably improves the dynamic of the brushless excitation
system. For example, during the load shedding 1000.8 test
associated to non linear resistor (𝑅𝑑 ) (see, Fig. 9), the voltage IV. C ONCLUSION
overshoot is 7% (peak), which is lower than the standard This paper presents an advanced brushless excitation
brushless exciter with a peak voltage of 12.5%. A significant system for synchronous generators using a dynamically con-
reduction of the response time is also noticed. With the power trolled non linear discharge resistor. The studied de-excitation
factor 𝑃 𝐹 = 0.3, 𝑃 𝐹 = 0.6 and the load 1500.8 (see, Figs. control system has a simple structure composed mainly: on
10, 11 and 12), a large amelioration in the system response the one hand, a rotating non linear discharge resistor con-
is also observed. During all load impact tests, the value of nected to the field circuit of the SG and controlled by rotating
the output voltage (voltage drop) is almost the same among IGBT, on the other hand, an control strategy associated with
both excitation structure (ABE and SBE) because the rotating the PID regulator to control the opening and closing of the
IGBT still closed when load is applied to the SG (see for rotating IGBT. Furthermore, this paper presents a robust H∞
370
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considerable improvement in the dynamic behaviour of the erator brushless field excitation and voltage regulation via capacitive
voltage regulation in terms of voltage overshoot, response coupling through journal bearings,” IEEE Trans. Industry Appl, vol. 53,
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with a 0.3 power factor, a large improvement in the system V. B IOGRAPHIES
response is observed. A significant reduction in the response
time is achieved and the voltage overshoot is also decreased. AbdAllah Barakat has received his PhD in 2011 from the University
of Poitiers (France). He is actually an assistant professor at Beirut Arab
University in Lebanon. He worked at General Electric as principal engineer
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