SKM 300GB123D

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Symbol Conditions Values Units
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1 08-09-2006 RAA © by SEMIKRON

SKM 300GB123D
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
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   01  This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Typical Applications
 +*    This technical information specifies semiconductor devices but promises no
 23 characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.

GB GAL GAR

2 08-09-2006 RAA © by SEMIKRON

SKM 300GB123D
Zth
Symbol Conditions Values Units
Zth(j-c)l
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SKM 300GAR123D

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GB GAL GAR

3 08-09-2006 RAA © by SEMIKRON

SKM 300GB123D

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC)

Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)

Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic

4 08-09-2006 RAA © by SEMIKRON

SKM 300GB123D

Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG

Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic

Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge

5 08-09-2006 RAA © by SEMIKRON

SKM 300GB123D
UL Recognized File 63 532

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>- * , 5$ >+ * , 5G R , 5$  >+< * , 5; R , 5$ 

6 08-09-2006 RAA © by SEMIKRON