45, 46. . Consider an LED having a minor (a) A GaAlAs laser 65364 4si2A (GaAs) a(GaP) a(lnAs) = 6.05904 (InP) = 5.8696 the quaternary lattice spacing becomes alx, y) = 0.1894) — 0.4184 40.0130xy + 58696 (©) For quaternary alloys that are lattice-matched to InP, the relation between x and y can be determined by letting a(s,y) =a(lnP). Show that since (= x < 047, the resulting expression can be approximated by y ~ 2.20% () A simple empirical relation that gives the band-gap energy in terms of x and y glx, 9) = 1.35 + 0.668x ~ 1.17) + 0.7582? + 0.18)? ~.069xp —0.322x4y + 0.3339" eV Find the band-gap energy and the peak emission wavelength of Ting x4Gt926A80 4Poas Using the expression E —lie/2, show why the FWHM power spectral width of LEDs becomes wider at longer wavelengths. A double-heterojunction InGaAsP LED emitting ata peak wavelength of 1310 nm has radiative and nonradiative recombination times of 25 and 90 ns, respectively ‘The drive current is 35 mA. (c) Find the internal quantum efficiency and the internal power level, (8) If the refractive index of the light source material is n =3.5, find the power ‘emitted from the devioe. Assume the injected minority carrier lifetime of an LED is 5ns and that the device has an optical output of 0.30 mW when a constant de drive current is applied. Plot the optical output power when the LED is modulated at frequencies ranging from 20 to 100 MHz, Note what happens to the LED output power at higher modulation frequencies. y carrer lifetime of $ ns, Find the 3-dB optical ‘bandwidth and the 3-4B electrical bandwidth, iode has a $00-um cavity length which has an effective absorption coefficient of 10cm". For uncoated facets the reflectivities are (0,32 at each end, What is the opticel gain at the lasing threshold? () If one end of the laser is coated with a dielectric reflector so that its reflectivity is now 90 percent, what is the optical gain at the lasing threshold? (6) IF the internal quantum efficiency is 0.65, what is the external quantum eff- ciency in eases (a) and (b)? Find the external quantum efficiency for a Gay-,Al,As laser diode (with x = 0.03) Which has an optical-power-versus-drive-current relationship of 0.5 mW/mA (e.g as shown in Fig. 431), Approximate expressions for the transverse a factors Py and P, respectively, in a Fabry-Perot lasing cavity are 1 optical-feld confinement 195196 412. 414, 415. 416, and Here, w and d are the width and thickness, ofthe active layer, and and ny are the refractive indices inside and outside the cavity, respectively (@) Consider a 1300-nm InGaAsP laser diode ia which the active region is 0.1 mn thick, Lum wide, and 250m long with refractive indices m = 2.55 and my = 3.20. What are the transverse and lateral optical-feld confinement factors? (©) Given that the total confinement factor is P = F's, what isthe gain threshold if the effective absorption coefficient is @ = 30cm! and the facet reflectivities are Ry = R= 031? A GaAs laser emitting at 800 nm has a 400-um cavity length with a refractive index m=3.6. If the pain g exceeds the total loss a throughout the range 750nm <2 < 850m, how many modes will exist inthe laser? A laser emitting at 24 = 850 nm has a gain-spectral width of ¢ = 32 nm and a peak gain of g(0) = 50cm, Plot g(2) from Eq. 4-41. Ia; = 32.2cm~1, show the region here lasing takes place. Ifthe laser is 400 jm long and = 3.6, how meny modes will be excited in this laser? ‘The derivation of Eq, (4-46) assumes that the refractive index n is independent of wavelength, (2) Show that when m depends on 2, we have aa BL = naa) (8) Ifthe group refractive index (n ~ Adh/dh) is 4.5 for GaAs at 850 nm, what isthe mode spacing for a 400-jm-long laser, For laser structures that have strong carrier confinement, the threshold current density for stimulated emission Jy can to a good approximation be related to the lasing-threshold optical gain gw by gm = AJ, where 8 is a constant that depends on the specific device construction. Consider a GaAs laser with an optical cavity of length 250 am and width 100 zm. At the normal operating temperature, the gain factor B=21 x 10? A/om? and the effective absorption coefficient = Nem" (a) If the refractive index is 3.6, find cold current Jy. Assume the laser end faces are uncoated and ¢ restricted to the optical cavity (©) What isthe threshold current ifthe ls From quantum mechanics, the energy levels for electrons and holes in the quan structure shown in Fig. 426 are given by threshold current density and the thresh- cavity width is reduced to 10am? 417. 418, 419, and where the act and ho which | It = states if Inam where 1 cavity a old tem ture-dey laser ha Ty =31 (i =0 @ Ass plot rang ©) Gi of | A distri erating metrical a tenth When a within t relations (@ Ass injec inth