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Transistor FP812
Transistor FP812
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions FM20 (full-mold)
Symbol Ratings Unit Symbol Test Conditions Ratings Unit
VCBO –120 V ICBO VCB = –120V 10max µA 10.0 4.2
3.3 2.8
VCEO –120 V IEBO VEB = –6V 10max µA C0.5
4
8.4
IC –8 (pulse –12) A hFE VCE = –4V, IC = –3A 70min
16.9
IB –3 A VCE (sat) IC = –3A, IB = –0.3A –0.3max V
a
PC 35 (Tc=25ºC) W 2.6
0.8
b
Tj 150 ºC Typical Switching Characteristics
3.9
Tstg –55 to +150 ºC
VCC RL IC VBB1 VBB2 IB1 IB2 t on t stg tf 1.35
(13.5)
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) 1.35
0.85
12 4 3 –10 5 –30 30 2.5 0.4 0.6
2.54 2.54 0.45
2.2
a) Type No.
B C E b) Lot No.
(Unit: mm)
■ IC — VCE Characteristics (typ.) ■ VCE (sat) — I B Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.)
(VBE = –4V)
–8 –2 –8
A –100mA
mA
A Ic = –3A
0 0m 50
m
00
–2 –1
–75mA
–3
–6 –6
Ic = –5A
VCE (sat) (A)
–50mA
IC (A)
IC (A)
–4 –1 –4
–25mA
Tc = –40ºC
–2 Ic = –1A –2 25ºC
IB = –10mA
75ºC
125ºC
0 0 0
0 –1 –2 –3 –4 –5 –10 –50 –100 –500 –1000 –2000 0 –0.5 –1.0 –1.5
VCE (V) IB (mA) VBE (V)
hFE
100 100 1
j-a
–55ºC 0.5
50 50 Single Pulese
0.1
30 30 0.05
–0.01 –0.05 –0.1 –0.5 –1 –5 –8 –0.01 –0.05 –0.1 –0.5 –1 –5 –8 0.0002 0.001 0.01 0.1 1 10 100
IC (A) IC (A) t (sec)
Aluminum heatsink
c
–5
m
10
Unit: mm
Typ
se
D.
0m
30
c
C
se
20 (T
fT (MHz)
c
c
=2
W
5º
ith
PC (W)
C)
in
IC (A)
fin
20
ite
–1
he
20
at
0•
si
nk
20
10 –0.5 0•
2
10 100
•1 00 •
natural air cooling 2
Without heatsink
Without heatsink
0 –0.1 0
0.01 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –150 0 50 100 150
IE (A) VCE (V) Ta (ºC)
61
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