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2mbi300u2b 060
2mbi300u2b 060
Features Applications
· High speed switching · Inverter for Motor drive
· Voltage drive · AC and DC Servo drive amplifier
· Low inductance module structure · Uninterruptible power supply
· Industrial machines, such as Welding machines
Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip Tj= 125°C / chip
750 750
300 300
150 150 8V
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip
750 10
Collector - Emitter voltage : VCE [ V ]
Tj=25°C Tj=125°C
600 8
Collector current : Ic [A]
450 6
300 4
Ic=600A
150 2
Ic=300A
Ic=150A
0 0
0 1 2 3 4 5 10 15 20 25
Cies
Capacitance : Cies, Coes, Cres [ nF ]
10.0
Gate - Emitter voltage : VGE
VGE
Cres
Coes
1.0
VCE
0.1
0 10 20 30 0 500 1000 1500
Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=9.1Ω, Tj= 25°C Vcc=300V, VGE=±15V, Rg=9.1Ω, Tj=125°C
10000 10000
Switching time : ton, tr, toff, tf [ nsec ]
100 tf 100 tf
10 10
0 150 300 450 600 0 150 300 450 600
Collector current : Ic [ A ] Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=300V, Ic=300A, VGE=±15V, Tj= 25°C Vcc=300V, VGE=±15V, Rg=9.1Ω
10000 25
Eoff(125°C)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
Eon(125°C)
ton
toff 20 Eoff(25°C)
1000 tr
Eon(25°C)
15
tf
10
100
5
Err(125°C)
Err(25°C)
10 0
1.0 10.0 100.0 0 150 300 450 600
Gate resistance : Rg [ Ω ] Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)
Vcc=300V, Ic=300A, VGE=±15V, Tj= 125°C +VGE=15V,-VGE <= 15V, RG >= 9.1Ω ,Tj <= 125°C
40 750
Eon
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
600
30
Collector current : Ic [ A ]
450
Eoff
20
300
10
150
Err
0 0
1.0 10.0 100.0 0 200 400 600 800
Gate resistance : Rg [ Ω ] Collector - Emitter voltage : VCE [ V ]
2MBI300U2B-060 IGBT Module
a
Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.)
chip Vcc=300V, VGE=±15V, Rg=9.1Ω
750 1000
300
150
0 10
0 1 2 3 0 150 300 450 600
Forward on voltage : VF [ V ] Forward current : IF [ A ]
1.000
Thermal resistanse : Rth(j-c) [°C/W ]
FWD
IGBT
0.100
0.010
0.001
0.001 0.010 0.100 1.000
Pulse width : Pw [ sec ]
Outline Drawings, mm
M233
3-M5