STGW25H120DF2, STGWA25H120DF2

Datasheet

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
2
3 • VCE(sat) = 2.1 V (typ.) @ IC = 25 A
3 1
1
2
• 5 μs minimum short circuit withstand time at TJ = 150 °C
TO-247 TO-247 long leads
• Safe paralleling
• Low thermal resistance
• Very fast recovery antiparallel diode

Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• High frequency converters

Description
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the H series of IGBTs, which represents an
optimum compromise between conduction and switching losses to maximize the
efficiency of high-switching frequency converters. Furthermore, a slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.

Product status links

STGW25H120DF2
STGWA25H120DF2

Product summary

Order code STGW25H120DF2

Marking G25H120DF2
Package TO-247
Packing Tube
Order code STGWA25H120DF2
Marking G25H120DF2
Package TO-247 long leads
Packing Tube

DS9297 - Rev 5 - March 2021 www.st.com

For further information contact your local STMicroelectronics sales office.
 STGW25H120DF2, STGWA25H120DF2
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 1200 V

Continuous collector current at TC = 25 °C 50

IC A
Continuous collector current at TC = 100 °C 25

ICP(1) Pulsed collector current 100 A

Gate-emitter voltage ±20

VGE V
Transient gate-emitter voltage (tp ≤ 10 μs, D ≤ 0.01) ±30

Continuous forward current at TC = 25 °C 50

IF A
Continuous forward current at TC = 100 °C 25

IFP(1) Pulsed forward current 100 A

PTOT Total power dissipation at TC = 25 °C 375 W

TJ Operating junction temperature range - 55 to 175 °C

TSTG Storage temperature range - 55 to 150 °C

1. Pulse width limited by maximum junction temperature.

Table 2. Thermal data

Symbol Parameter Value Unit

Thermal resistance, junction-to-case IGBT 0.4

RthJC °C/W
Thermal resistance, junction-to-case diode 1.47
RthJA Thermal resistance, junction-to-ambient 50 °C/W

DS9297 - Rev 5 page 2/17

 STGW25H120DF2, STGWA25H120DF2
Electrical characteristics

2 Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter breakdown
V(BR)CES VGE = 0 V, IC = 2 mA 1200 V
voltage
VGE = 15 V, IC = 25 A 2.1 2.6
Collector-emitter saturation
VCE(sat) VGE = 15 V, IC = 25 A, TJ = 125 °C 2.4 V
voltage
VGE = 15 V, IC = 25 A, TJ = 175 °C 2.5

IF = 25 A 3.8 4.9

VF Forward on-voltage IF = 25 A, TJ = 125 °C 3.05 V

IF = 25 A, TJ = 175 °C 2.8

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V 250 nA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance - 2010 - pF

Coes Output capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V - 146 - pF

Cres Reverse transfer capacitance - 49 - pF

Qg Total gate charge - 100 - nC

VCC = 960 V, IC = 25 A, VGE = 0 to 15 V
Qge Gate-emitter charge - 11 - nC
(see Figure 28. Gate charge test circuit)
Qgc Gate-collector charge - 52 - nC

DS9297 - Rev 5 page 3/17

 STGW25H120DF2, STGWA25H120DF2
Electrical characteristics

Table 5. IGBT switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time 29 - ns

tr Current rise time 12 - ns

(di/dt)on Turn-on current slope 1774 - A/μs

VCE = 600 V, IC = 25 A,
td(off) Turn-off delay time 130 - ns
RG = 10 Ω, VGE = 15 V
tf Current fall time (see Figure 27. Test circuit for inductive 106 - ns
(1) load switching)
Eon Turn-on switching energy 0.6 - mJ

Eoff(2) Turn-off switching energy 0.7 - mJ

Ets Total switching energy 1.3 - mJ

td(on) Turn-on delay time 27.5 - ns

tr Current rise time 13.5 - ns

(di/dt)on Turn-on current slope 1522 - A/μs

VCE = 600 V, IC = 25 A,
td(off) Turn-off delay time 139 - ns
RG = 10 Ω, VGE = 15 V, TJ = 175 °C
tf Current fall time (see Figure 27. Test circuit for inductive 200 - ns
load switching)
Eon(1) Turn-on switching energy 1.05 - mJ

Eoff(2) Turn-off switching energy 1.65 - mJ

Ets Total switching energy 2.7 - mJ

tsc Short-circuit withstand time VCE = 600 V, VGE = 15 V, TJ = 150 °C, 5 - μs

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time - 303 - ns

Qrr Reverse recovery charge IF = 25 A, VR = 600 V, - 0.93 - μC

Irrm Reverse recovery current di/dt = 500 A/μs, VGE = 15 V - 15.3 - A

Peak rate of fall of reverse (see Figure 27. Test circuit for inductive
dIrr/dt - 400 - A/μs
recovery current during tb load switching)

Err Reverse recovery energy - 0.52 - mJ

trr Reverse recovery time - 508 - ns

IF = 25 A, VR = 600 V,
Qrr Reverse recovery charge - 2.71 - μC
di/dt = 500 A/μs, VGE = 15 V,
Irrm Reverse recovery current - 23 A
TJ = 175 °C
Peak rate of fall of reverse
dIrr/dt (see Figure 27. Test circuit for inductive - 680 A/μs
recovery current during tb
load switching)
Err Reverse recovery energy - 1.56 mJ

DS9297 - Rev 5 page 4/17

 STGW25H120DF2, STGWA25H120DF2
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature Figure 2. Collector current vs case temperature

GIPG240420141525FSR
IC GIPG240420141537FSR
Ptot
(A)
(W)
VGE ≥ 15V, T J ≤ 175 °C
350 VGE ≥ 15V, T J ≤ 175 °C 50
300
40
250

200 30

150
20
100

50 10

0 0
0 25 50 75 100 125 150 175 TC(°C)
0 25 50 75 100 125 150 175 TC(°C)

Figure 3. Output characteristics (TJ = 25 °C) Figure 4. Output characteristics (TJ = 175 °C)
IC GIPG240420141543FSR IC GIPG260420141136FSR
(A) 11V (A) 13V
VGE=15V
13V 11V
80 80
VGE=15V
9V
60 60

9V
40 40

20 20
7V
7V
0 0
0 1 2 3 4 5 VCE(V) 0 1 2 3 4 5 VCE(V)

Figure 5. VCE(sat) vs junction temperature Figure 6. VCE(sat) vs collector current

VCE(sat) GIPG260420141146FSR VCE(sat) GIPG260420141152FSR

(V) (V)
3.4 IC= 50A 3.6 TJ= 25°C
VGE= 15V VGE= 15V

3.2
3.0 TJ= 175°C

2.8
2.6 IC= 25A
2.4 TJ= -40°C
2.2
2.0
IC= 12.5A
1.8
1.6

1.4 1.2
-50 0 50 100 150 TJ(°C) 0 20 40 60 80 IC(A)

DS9297 - Rev 5 page 5/17

 STGW25H120DF2, STGWA25H120DF2
Electrical characteristics (curves)

Figure 7. Collector current vs switching frequency Figure 8. Safe operating area

IC (A) GIPG260420141200FSR GIPG260420141214FSR
IC
(A)
80

70 Tc=80°C
100
1 µs
60

50 Tc=100 °C
10 µs
10
40
100 µs
30 1 ms
Single pulse
20 1 Tc= 25°C, T J ≤ 175°C
rectangular current shape,
(duty cycle=0.5, VCC = 600V, RG=10 Ω, VGE= 15V
10 VGE = 0/15 V, TJ =175°C)

0 0.1
1 10 f (kHz) 1 10 100 1000 VCE(V)

Figure 9. Transfer characteristics Figure 10. Diode VF vs forward current

IC GIPG260420141221FSR VGE(th) GIPG260420141452FSR
(A) (norm)
VCE=10V 1.1 IC= 1mA
VCE= VGE
80
TJ=25°C
1.0

60
0.9
TJ=175°C
40
0.8

20 0.7

0 0.6
5 6 7 8 9 10 11 VGE(V) -50 0 50 100 150 TJ(°C)

Figure 11. Normalized V(BR)CES vs junction temperature Figure 12. Capacitance variations

V(BR)CES GIPG260420141502FSR C GIPG260420141508FSR

(norm) (pF)

1.10 Cies
IC= 2mA 1000
1.05

1.00 100

Coes
0.95
10 Cres
0.90
f = 1 MHz, VGE = 0

0.85 1
-50 0 50 100 150 TJ(°C) 0.1 1 10 100 VCE(V)

DS9297 - Rev 5 page 6/17

 STGW25H120DF2, STGWA25H120DF2
Electrical characteristics (curves)

Figure 13. Gate charge vs gate-emitter voltage Figure 14. Switching energy vs collector current
VGE GIPG270420141015FSR E GIPG270420141036FSR
(V) (µJ)
VCC = 600V, V GE = 15V,
3000 RG = 10Ω, TJ = 175°C
16 IC= 25A
IGE= 1mA
VCC= 960V 2500
12 EOFF
2000
EON
8 1500

1000
4
500

0 0
0 20 40 60 80 100 Qg(nC) 0 10 20 30 40 50 IC(A)

Figure 15. Switching energy vs gate resistance Figure 16. Switching energy vs junction temperature
E GIPG270420141049FSR E GIPG270420141146FSR
(µJ) (µJ)
VCC = 600 V, V GE = 15 V, VCC= 600V, V GE= 15V,
IC = 25 A, TJ = 175 °C 1700 RG= 10Ω, IC= 25A
2000
1500
EOFF
1500 EOFF 1300
EON
EON
1100
1000

900
500
700

0 500
0 10 20 30 40 RG(Ω) 0 50 100 150 TJ(°C)

Figure 17. Switching energy vs collector-emitter voltage Figure 18. Switching times vs collector current
E GIPG270420141152FSR t GIPG270420141157FSR
(µJ) (ns)
TJ= 175°C, VGE= 15V, TJ= 175°C, VGE= 15V,
2500 RG= 10Ω, IC= 25A RG= 10Ω, VCC= 600V
tf
2200

1900 EOFF 100

tdoff
1600 tdon
1300 EON
1000 10

700 tr

400
100 1
250 450 650 850 VCE(V) 0 10 20 30 40 50 IC(A)

DS9297 - Rev 5 page 7/17

 STGW25H120DF2, STGWA25H120DF2
Electrical characteristics (curves)

Figure 20. Reverse recovery current vs diode current

Figure 19. Switching times vs gate resistance
slope
t GIPG270420141312FSR
Irm GIPG270420141317FSR
(ns)
(A)
tdoff IF = 25A, VCC = 600V
35
tf

100 30

tdon 25

tr 20
10
15
TJ= 175°C, VGE= 15V,
IC= 25A, VCC= 600V 10
1
0 10 20 30 40 RG(Ω) 5
300 700 1100 1500 di/dt(A/µs)

Figure 22. Reverse recovery charge vs diode current

Figure 21. Reverse recovery time vs diode current slope
slope
trr GIPG270420141322FSR
Qrr GIPG270420141326FSR
(ns)
VCC = 600V, V GE = 15V (nC)
VCC = 600V, V GE = 15V
TJ = 175°C, IF = 25A
TJ = 175°C, IF = 25A
700 3500

3000
500

2500

300
2000

100
300 700 1100 1500 di/dt(A/µs) 1500
300 700 1100 1500 di/dt(A/µs)

Figure 23. Reverse recovery energy vs diode current

Figure 24. Diode VF vs forward current
slope
GIPG270420141330FSR VF (V) GIPG270420141355FSR
Err
(µJ) TJ= -40°C
VCC = 600V, V GE = 15V 8 TJ= 25°C
2000 TJ = 175°C, IF = 25A
7
1800 6

5
1600
4 TJ= 175°C
1400
3

1200 2

1000 1
di/dt(A/µs) 0 20 40 60 80 IF(A)
300 700 1100 1500

DS9297 - Rev 5 page 8/17

 STGW25H120DF2, STGWA25H120DF2
Electrical characteristics (curves)

Figure 25. Thermal impedence for IGBT

ZthTO2T_A
K
d=0.5

0.2

0.1

10-1 0.05

0.02

0.01

Single pulse
10-2
10-5 10-4 10-3 10-2 10-1 tp (s )

Figure 26. Thermal impedance for diode

DS9297 - Rev 5 page 9/17

 STGW25H120DF2, STGWA25H120DF2
Test circuits

3 Test circuits

Figure 27. Test circuit for inductive load switching Figure 28. Gate charge test circuit

A A
C
L=100 µH k
G k

E B
B
C 3.3 1000 VCC
µF µF
k
G D.U.T
k
+ RG E

k
-
k

AM01504v1 AM01505v1

Figure 29. Switching waveform Figure 30. Diode reverse recovery waveform

90%

VG 10%

90%

VCE 10%
tr(Voff)
tcross
25
90%

IC td(off)
10%
td(on) tf
tr(Ion)
ton toff

AM01506v1

DS9297 - Rev 5 page 10/17

 STGW25H120DF2, STGWA25H120DF2
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-247 package information

Figure 31. TO-247 package outline

0075325_9

DS9297 - Rev 5 page 11/17

 STGW25H120DF2, STGWA25H120DF2
TO-247 package information

Table 7. TO-247 package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
ØP 3.55 3.65
ØR 4.50 5.50
S 5.30 5.50 5.70

DS9297 - Rev 5 page 12/17

 STGW25H120DF2, STGWA25H120DF2
TO-247 long leads package information

4.2 TO-247 long leads package information

Figure 32. TO-247 long leads package outline

8463846_2_F

DS9297 - Rev 5 page 13/17

 STGW25H120DF2, STGWA25H120DF2
TO-247 long leads package information

Table 8. TO-247 long leads package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.90 5.00 5.10

A1 2.31 2.41 2.51
A2 1.90 2.00 2.10
b 1.16 1.26
b2 3.25
b3 2.25
c 0.59 0.66
D 20.90 21.00 21.10
E 15.70 15.80 15.90
E2 4.90 5.00 5.10
E3 2.40 2.50 2.60
e 5.34 5.44 5.54
L 19.80 19.92 20.10
L1 4.30
P 3.50 3.60 3.70
Q 5.60 6.00
S 6.05 6.15 6.25

DS9297 - Rev 5 page 14/17

 STGW25H120DF2, STGWA25H120DF2

Revision history

Table 9. Document revision history

Date Revision Changes

03-Oct-2012 1 Initial release.

Updated title and features in cover page.
28-Feb-2014 2
Minor text changes.
Document status promoted from preliminary to production data.
Updated Table 4: Static characteristics and Table 6: IGBT switching characteristics
31-Mar-2014 3
(inductive load).
Added Section 2.1: Electrical characteristics (curves).
Added 4.2: TO-247 long leads, package information.
06-Mar-2015 4
Minor text changes.
Updated Table 1. Absolute maximum ratings.
10-Mar-2021 5
Minor text changes.

DS9297 - Rev 5 page 15/17

 STGW25H120DF2, STGWA25H120DF2
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.2 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

DS9297 - Rev 5 page 16/17

 STGW25H120DF2, STGWA25H120DF2

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DS9297 - Rev 5 page 17/17