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Summary
 A TECHNICAL REPORT ON MEMRISTORS

REPORT TITLE: THE MEMRISTOR A REVOLUTIONINZING CIRCUIT

COMPONENT

BY

UMAR USMAN MOHAMMED (201208004)

SUBMITTED TO

ENGR. HALIMA SADIA YAKUBU

IN PARTIAL FULFILMENT OF THE REQUIREMENTS FOR EEE 312

(TECHNICAL COMMUNICATION FOR ELECTRICAL/ELECTRONICS
ENGINEERS)

DATE: 8TH JUNE 2023

1
TABLE OF CONTENTS
LIST OF FIGURES ............................................................................................................................................ 3

INTRODUCTION ............................................................................................................................................. 4

HISTORY ......................................................................................................................................................... 4

FABRICATION/WORKING PRINCIPLE ............................................................................................................. 5

APPLICATIONS ............................................................................................................................................. 10

CURRENT AND FUTURE RESEARCH ............................................................................................................. 11

ETHICAL ISSUES............................................................................................................................................ 13

CONCLUSION ............................................................................................................................................... 13

REFERENCES ................................................................................................................................................ 14

2
LIST OF FIGURES

Figure 1 : Diagram depicting the structure of the TiO2 memristor ........................ 5

Figure 2 : chart postulated by Dr Chua................................................................... 6

Figure 3 : chart of results obtained by William and his team at HP ....................... 6

Figure 4 : Diagram of a memristor ......................................................................... 6

3
INTRODUCTION

The memristor has been called by many as the fourth fundamental circuit element [1]-
[2]-[3], because in 1971 lean Chua a professor at the university of California was
analysing the relationships between the non linear (resistor, capacitor, and inductor)
and realised a missing circuit element. After wards he proposed a new passive two
10
terminal circuit element that relates the magnetic flux to charge and named it the
memristor.

The memristor is a contraction of memory resistor and as the name implies, it is a

resistive element with memory. Its resistance is determined by the magnitude and
polarity of the voltage applied across its terminals also with the time this voltage is
applied, and once the power is cut-off the device retains the history of the resistance it
had before the power was cut until the voltage is applied again [5]. This resistive
switching characteristics makes the device attractive for computing applications
‘where a computer would turn on in an instant no boot up sequence required’-
William at HP.

This paper is organised as follows, first we give the history of the device then we
discuss its fabrication and working principle, we then go on to discuss its applications,
current and future research on the new technology, some of its ethical issues, and then
conclude what we have elaborated in the paper.

HISTORY

Sir Humphry Davy is credited with performing the first experiments which can be
explained by memristor effects as long ago as 1808 [6]. however the memistor
5
(memory resistor) named in 1960 by Bernard Widrow to describe a circuit element of
an early artificial neural network called ADALINE is the first device of a related
nature. And a few years later in 1968 Argall published an article explaining the
switching effects of TiO2 which was later claimed by researchers from Hewlett
Packard to be evidence of a memristor [7].
7
Professor Leon Chua of the University of California, Berkeley's department of
electrical engineering and computer sciences proposed his novel two terminal circuit
in 1971. Theoretically, the non-linear resistor (voltage vs. current), non-linear
capacitor (voltage vs. charge), and non-linear inductor (magnetic flux linkage vs.
current) are all symmetrical, according to Chua's article from 1971.derived the

4
characteristics of a fourth fundamental non-linear circuit component that links
magnetic flux linkage and charge, which he called the memristor[3].
2
In 2008, 37 years after chua’s publication, researchers at HP Labs made a publication
of their own stating the fabrication of a working memristor. Their device utilised a
partially oxidized titanium film on top of a completely oxidized titanium film, such
that the oxygen deficiencies on the top film act as positive charges and could be
redistributed throughout the entire stack upon application of either positive or
negative voltage. The basic structure is illustrated in fig 1 [4] .

FABRICATION/WORKING PRINCIPLE

WORKING PRINCIPLE

The behaviour of the memristor device created by William and his team at HP is
illustrated by the I-V characteristics of fig 2 and 3 [2]. the first of which was
postulated by Dr Chua and the second being the results of William and his team at
HP. Going along the positive direction of the curve of [fig 3], it is seen that the
2
memristor acts as a typical resistor indicated by the straight line region until it reaches
some threshold, at which point the voltage is sufficiently positive to repel the positive
charge carriers, distributing them through out the stack. this will provide a path for
charge to flow thereby decreasing the overall resistance [2]. While going along the
2
negative direction of the curve, it is seen again that the memristor acts as a typical
resistor until it reaches some negative threshold, at which point the voltage is
sufficiently negative and attracts the positive charge carriers grouping them together.
this will decrease the charge paths through the stack, thereby increasing the
memristors resistance.

Figure 1: Diagram depicting the structure of the TiO2 memristor

5
Figure 2: chart postulated by Dr Chua

Figure 3: chart of results obtained by William and his team at HP

4
A charge controlled memristor configuration (left) and a flux controlled memristor
configuration (right) are shown in the figure below.

4
Figure 4: Diagram of a charge controlled memristor and a flux controlled memristor

6
The two HP memristors giving in the above figures are described by the non linear
constitutive relation (1) and (2),

v = M(q)i, or (1)

i = W(φ)v, (2)
8 dφ(q)
M(q) = (3)
dq

dq(φ)
W(φ) = (4)
dφ

where the quantities given by M(q), W( φ ), are known as memristance and

memductance respectively.

SYNTHESIS AND FABRICATION

The functionality of TiO2 memristors depend largely on the following factors, all of
which depend on the synthesis method, fabrication processing, and post fabrication
processing; phase purity, phase structure, crystallinity, and defect structure [3].

SYNTHESIS

The methods of synthesis are categorized under chemical approaches, and physical
approaches,
1
Chemical approaches

1. Sol-gel

Using this procedure a liquid solution is transformed into a viscoelastic gel phase. In
the traditional concept of sol-gel The phase purity, size, and shape of synthesized
TiO2 nanoparticles are taken into account in relation to the condensation and
hydrolysis reactions, the reactivity and concentration of the precursor (titanium
alkoxide or TiCl4), the type of solvent, and the temperature [8]. Additionally, early-
stage mechanisms like nucleation, crystal growth, and aggregation may be extremely
important in the sol-gel production of TiO2 nanoparticles [9].

2. Thermal oxidation
6
Thermal oxidation of a titanium layer at temperatures between 500 °C and 800 °C can
produce polycrystalline TiO2, often in the form of rutile [10]. This technique enables
the manufacture of TiO2 films with thicknesses as low as 4 nm [11]. Additionally,
thermal oxidation is a cheap technique that works with regular RRAM.

7
3. Hydrothermal synthesis

This are heterogeneous reactions in aqueous mediums at high pressures and

temperatures that are adequate to dissolve and recrystallize substances that are
1
normally insoluble in water. In this process, temperatures as high as 230°C and
pressures as high as 200 bar help a crystalline product develop at comparatively low
temperatures. This process produces TiO2-based materials with reasonable
ROFF/RON switching ratios of up to 100 [12] however greater values (>104) have
also been recorded [13]. A solvothermal technique can be used to get additional
control over the size and form of TiO2 particles [14]. This approach was recently used
1
to successfully create sub-10 nm TiO2 nanoparticles capable of forming self-
assembled monolayers and possessing resistive switching characteristics [15].

4. Electrochemical oxidation
1
The oxidation of a titanium foil in an electrochemical cell using an electrochemical
technique or anodizing produces nanostructures of TiO2 [16]. By selecting an
appropriate substrate, electrolyte, and electrochemical conditions, this approach
allows the composition, thickness, and structure to be adjusted. This technique for
producing TiO2-based memristors has only been covered in a small number of
research.

5. Atomic layer deposition

Techniques based on chemical vapor deposition are frequently employed to create

thin films. Memristive devices often use ALD or plasma-enhanced ALD (PEALD) to
1
create ultra thin TiO2 layers. These procedures involve the breakdown of Ti-based
predecessors (TiCl4, titanium alkoxides) in the presence of an oxidant [17]. The
procedures enable the formation of extremely thin TiO2 films between 7 and 13 nm
[18], and are compatible with other fabrication methods.

Physical approaches

1. Physical vapor deposition (PVD)

In this method transfer and deposition of materials are done under vacuum conditions.

8
 1
2. Pulsed microplasma cluster source (PMCS)

Using this technique, supersonic pulsed beams of metal oxide clusters are produced,
which are then deposited on a substrate. High-energy deposition is used to create
nanostructured thin films.

The technique was proposed for the production of TiO2 memristors because it allows
for the control of nanocrystalline structure and porosity while allowing for growth at
1
room temperature [19]. In addition to solely memristive uses, the technique was also
recommended for creating biohybrid TiO2 interfaces [20], which showed favourable
1
characteristics for the expansion and viability of neuronal cell cultures as well as their
electrical activity.

FABRICATION

Thin film fabrication entails the deposition of TiO2 nanomaterials, and the
arrangement of the devices electrodes, the following are the various methods of
fabricating TiO2 memristive devices,

1. Drop casting

In this method the functional layers of TiO2 are obtained by using a syringe or
pipette to deposit drops of colloidal dispersions of TiO2 onto a substrate[3].

2. Spin coating
1
This approach relies on spinning the substrate in order to make use of the inertial
force exerted on both the fixed substrate and the unfixed drop of slurry that was cast
1
on top of it. The method can be modified to produce TiO2 thin films with thicknesses
as low as 35 nm by varying the slurry or solution's viscosity and the rotating
speed[21].

3. Dip coating

Dip coating is regarded as a high quality and economical deposition method If

physical adsorption between the substrate and the adsorbate distributed in a colloidal
solution is chosen as a controlled procedure[3].

9
4. Inkjet Printing

Inkjet printing is an affordable fabrication technique, particularly for laboratory-scale

prototyping and micro- and nanopatterning [22]. The technique has been used for
stretchable and flexible electronics, including various TiO2 memristive devices [23].

APPLICATIONS
9
Due to their neuromorphic properties memristors find applications in computing and
1
information systems based on artificial neural networks which are capable of
1
emulating the associative memory, an important function of the brain. In addition, the
technological simplicity of thin film memristors based on transition metal oxides such
as TiO2 allows their integration into electronic circuits with extremely high packing
1
density [24]. and hence the properties of memritors, such as nonvolatility, resistive
memory and synaptic plasticity, and feasibly high integration density, are at the for
front of its performance of cognitive task [such as image recognition. Although
memristors are gaining rapid acceptance the major challenges with this new
1
technology lie in the technological and materials aspects. the choice of memristive
materials as well as the methods of synthesis and fabrication affect the properties of
memristive devices.
1
Biomimicking, Biointerfaces, and Biohybrid systems

The neuromorphic nature of the resistive switching in the TiO2 memristors has gained
substantial research on its potential use in functional coupling with living biological
1
systems. Recently, a memristive simulation of important biological synaptic functions
such as non-linear transmission characteristics, short-/long-term plasticity, and paired-
pulse facilitation has been reported for hybrid organic–inorganic memristors using Ti-
based maleic acid/TiO2 ultrathin films[25].The next generation of two-dimensional
memristive materials, such as functionalized TiO2 memristive systems, may be in
rivalry with each other in this regard.
11
The biomimetic production of TiO2 also opens up new possibilities for its adaptable
microstructural patterning and functionalizations [26]. In 2013 [27], the first work
attempting to address the experimental convergence between spiking memristors and
in vitro spiking neurons. A few years later, [28] compressed data on biological brain
spikes recorded in real time using TiO2 memristors. Multielectrode arrays (MEAs)
1
were used in these in vitro research to examine electrical communication with

10
biological cells as well as their incubation. TiO2 thin films, as an alternative, could be
used as an interface material in a variety of biohybrid devices.

Sensors
1
As memristors resistive switching is dependent on external stimuli, TiO2-based
memristors have also found application in various sensors Including recording of
mechanical energy[29], hydrogen detection[30], γ-ray sensing[31] and fludic based
sensors such as sensors for pH, and glucose concentrations. Also since TiO2 thin
films generate photoinduced electron-hole pairs, they can also be used as UV
radiation sensors [31].

CURRENT AND FUTURE RESEARCH

Various publications are available on the potential applications of memristors, in this

paper research based on RRAM (resistive random access memory) neuromorphic
computing are presented.

RRAM applications

As previously mentioned due to the resistive switching property of the memristor

upon application of voltage across its terminals it can be used in computer memory
applications in RRAM devices, this paper published in 2019 [33], compares the
RRAM to the conventional SRAM (static random access memory) and states that the
SRAM the best of the conventional memory technologies due to its efficiency over
DRAM (dynamic random access memory) which needs to be refreshed at regular
intervals,has some drawbacks relating to higher area requirements due to its
3
utilization of a higher number of metal- oxide- semiconductor field-effect transistor
3
(MOSFET) per cell. And that due to the constant scaling to make denser memory
designs, efficient designs have become necessary, and the memristor based memory
3
circuit RRAM is the prefared substitute. In the paper a new carbon nanotube-field
effect transistor (CNFET)-based 5CNFET2M RRAM cell was proposed, and it
3
consisted of two memristors as the memory elements and five CNFETs as switches.

11
Neuromorphic applications

Memristors find applications in artificial neural networks were the neuromorphic

property of the memristor is employed in creating computer systems that mimic the
functions of the human brain.

Future research

Memristor based neuromorphic systems could potentially help to simulate the

working of a brain and help diagnose all kinds of mental and psychological ailments.
Advancement in the technology could also lead to systems that can recognise patterns
and come to conclusions just as humans do.

ETHICAL ISSUES

Just like other new technologies measures have to be put in place to prevent the
negative consequences of manufacturing memristors. Some of this effects may
include,

1. Environmental pollution: the fabrication of memristors involve chemicals and

metals that could both cause environmental pollution when not disposed properly, and
could lead to the depletion of earth's mineral resources. Therefore measures that
ensure adequate disposal of waste should be employed

2. Safety concerns: some of the memristor fabrication process involve heating metal
to high temperatures, therefore certain safety measure have to be put in place to
prevent any accidents

CONCLUSION

In this paper we started by introducing the concept of the memristor, stating how it is
considered by many to be the fourth fundamental circuit element. Then we went on to
discuss its history noting significant events such as when it was first postulated by
Chua, and then its eventual fabrication by William and his team at HP. Then we went
on to discuss its working principle and means of fabrication, iterating the various
synthesis and fabrication techniques, and also giving the constitutive relations and I-V
characteristics governing the functioning of the device. Then applications relevant to
this paper were highlighted, which included RRAM, and neuromorphic computing
applications. Current and future research on the device were also given, highlighting
so of the memristor devices revolutionizing potentials in the neuromorphic computing

12
industry. Then the discussion on memristors was closed by giving some of its ethical
issues.

13
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17
 Similarity Report ID: oid:26704:150111289

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