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Ordering number : EN5443C 2SK2617LS

SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET

2SK2617LS General-Purpose Switching Device


Applications
Features
• Low ON-resistance.
• Low Qg.
• Ultrahigh-speed switching.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 500 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) ID 4 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 16 A
2.0 W
Allowable Power Dissipation PD
Tc=25°C 25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 88 mJ
Avalanche Current *2 IAV 4 A
*1 VDD=50V, L=10mH, IAV=4A
*2 L≤10mH, single pulse

Electrical Characteristics at Ta=25°C


Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 500 V
Zero-Gate Voltage Drain Current IDSS VDS=500V, VGS=0V 1.0 mA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V
Marking : K2617 Continued on next page.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
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thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O3107 TI IM TC-00000987 / 22006QB MS IM / 22004 TS IM TA-100437 No.5443-1/4


2SK2617LS
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Forward Transfer Admittance ⏐yfs⏐ VDS=10V, ID=2A 1.1 2.2 S
Static Drain-to-Source On-State Resistance RDS(on) ID=2A, VGS=15V 1.2 1.6 Ω
Input Capacitance Ciss VDS=20V, f=1MHz 550 pF
Output Capacitance Coss VDS=20V, f=1MHz 190 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 95 pF
Total Gate Charge Qg VDS=200V, ID=4A, VGS=10V 15 nC
Turn-ON Delay Time td(on) See specified Test Circuit. 15 ns
Rise Time tr See specified Test Circuit. 15 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 45 ns
Fall Time tf See specified Test Circuit. 25 ns
Diode Forward Voltage VSD IS=4A, VGS=0V 0.95 1.2 V

Package Dimensions Switching Time Test Circuit


unit : mm (typ)
7509-002
VDD=200V

10.0 4.5
3.2 2.8 ID=2A
VGS=15V
RL=100Ω
3.5

D VOUT
7.2

PW=1µs
D.C.≤0.5%
16.0

G
16.1

0.6

0.9 2SK2617LS
3.6

1.2 RGS
1.2 P.G S
50Ω
14.0

0.75 0.7

1 2 3 1 : Gate
2 : Drain
2.4

3 : Source

2.55 2.55 SANYO : TO-220FI(LS)

Avalanche Resistance Test Circuit

L
≥50Ω
RG

2SK2617LS
15V
50Ω VDD
0V

No.5443-2/4
2SK2617LS
ID -- VDS ID -- VGS
7 8
Tc=25°C VDS=10V Tc= --25°C
6 7
10V 15V
6 25°C
Drain Current, ID -- A

Drain Current, ID -- A
5
8V 5
4 75°C
4
3
3

2 7V
2

1 1
VGS=6V
0 0
0 2 4 6 8 10 0 5 10 15 20
Drain-to-Source Voltage, VDS -- V IT05191 Drain-to-Source Voltage, VDS -- V IT05192
RDS(on) -- VGS RDS(on) -- Tc
4.0 3.4
Tc=25°C
3.1
On-State Resistance, RDS(on) -- mΩ

On-State Resistance, RDS(on) -- mΩ


3.5
2.8

3.0 2.5

2.2
2.5 A
=2
Static-Drain-to-Source

Static-Drain-to-Source 1.9
V, ID A
1.6 =1
0 =2
ID
V GS V,
2.0
1 5
2A
1.3
S=
VG
1.5 ID=4A 1.0

0.7
1.0 1A
0.4

0.5 0.1
0 2 4 6 8 10 12 14 16 18 20 --50 --25 0 25 50 75 100 125
Gate-to-Source Voltage, VGS -- V IT05193 Case Temperature, Tc -- °C IT05194
⏐yfs⏐ -- ID IS -- VSD
10 100
VDS=10V 7
5
VGS=0V
Forward Transfer Admittance, ⏐yfs⏐ -- S

7
3
5 2
10
7
5
Source Current, IS -- A

3
3
C
25°
2 2
--
°C Tc= 1.0
25 C 7
75° 5
1.0 3
2
7 0.1
7
5 5
3
2
5°C
C
°C

3
25°

0.01
--25
7

7
Tc=

2 5
3
2
0.1 0.001
0.1 2 3 5 7 1.0 2 3 5 7 10 0 0.3 0.6 0.9 1.2 1.5
Drain Current, ID -- A IT05195 Diode Forward Voltage, VSD -- V IT05196
SW Time -- ID ASO
100 3
VDD=200V 2 IDP=16A <1µs
VGS=15V 10
7 10 µs
Switching Time, SW Time -- ns

7 ID=4A 10
5 0µ
5 td (off) s
Drain Current, ID -- A

3 1m
2 s
10
m
1.0 DC 100 s
3
tf 7 op ms
5 Operation in this area era
tio
3 is limited by RDS(on). n
2
tr 2

0.1
7
5
td(on)
10 3
2 Tc=25°C
7
Single pulse
0.01
7 1.0 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7
Drain Current, ID -- A IT05197 Drain-to-Source Voltage, VDS -- V IT05198

No.5443-3/4
2SK2617LS
PD -- Ta PD -- Tc
Allowable Power Dissipation, PD -- W 2.5 35

Allowable Power Dissipation, PD -- W


30
2.0

25

1.5
20

15
1.0

10

0.5
5

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT05199 Case Temperature, Tc -- °C IT05120
EAS -- Ta
120
Avalanche Energy derating factor -- %

100

80

60

40

20

0
0 25 50 75 100 125 150 175
Ambient Temperature, Ta -- °C IT10478

Note on usage : Since the 2SK2617LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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above.

This catalog provides information as of October, 2007. Specifications and information herein are subject
to change without notice.

PS No.5443-4/4

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