2SK3505-01MR FUJI POWER MOSFET

Super FAP-G Series N-CHANNEL SILICON POWER MOSFET

Outline Drawings
TO-220F
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof

Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit
Drain-source voltage V DS 500 V
Continuous drain current ID ±14 A Equivalent circuit schematic
Pulsed drain current ID(puls] ±56 A
Gate-source voltage VGS ±30 V Drain(D)
Repetitive or non-repetitive IAR *2 14 A
Maximum Avalanche Energy EAS *1 242 mJ
Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs
Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs
Gate(G)
Max. power dissipation PD Ta=25°C 2.1 W
Tc=25°C 60 Source(S)
Operating and storage Tch +150 °C
temperature range Tstg -55 to +150 °C
=150°C *3 IF<
*1 L=2.27mH, Vcc=50V *2 Tch < = -ID, -di/dt=50A/µs, Vcc <
= BVDSS, Tch <
= 150°C
*4 VDS <
= 500V
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Symbol Test Conditions Min. Typ. Max. Units
Drain-source breakdown voltaget V(BR)DSS ID= 250µA VGS=0V 500 V
Gate threshold voltage VGS(th) ID= 250µA VDS=VGS 3.0 5.0 V
VDS=500V VGS=0V Tch=25°C 25 µA
Zero gate voltage drain current IDSS
VDS=400V VGS=0V Tch=125°C 250
Gate-source leakage current IGSS VGS=±30V VDS=0V 10 100 nA
Drain-source on-state resistance RDS(on) ID=7A VGS=10V 0.35 0.46 Ω
Forward transcondutance gfs ID=7A VDS=25V 7 14 S
Input capacitance Ciss VDS =25V 1600 2400 pF
Output capacitance Coss VGS=0V 160 240
Reverse transfer capacitance Crss f=1MHz 7 10.5
Turn-on time ton td(on) VCC=300V ID=7A 18 27 ns
tr VGS=10V 16 24
Turn-off time toff td(off) RGS=10 Ω 35 50
tf 8 15
Total Gate Charge QG V CC =250V 33 50 nC
Gate-Source Charge QGS ID=14A 12.5 19
Gate-Drain Charge QGD VGS=10V 10.5 16
Avalanche capability IAV L=2.27mH Tch=25°C 14 A
Diode forward on-voltage V SD IF=14A VGS=0V Tch=25°C 1.00 1.50 V
Reverse recovery time t rr IF=14A VGS=0V 0.65 µs
Reverse recovery charge Qrr -di/dt=100A/µs Tch=25°C 6.0 µC

Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 2.08 °C/W
Thermal resistance
Rth(ch-a) channel to ambient 62.0 °C/W

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2SK3505-01MR FUJI POWER MOSFET
Characteristics

Allowable Power Dissipation Maximum Avalanche Energy vs. starting Tch

PD=f(Tc) E(AV)=f(starting Tch):Vcc=50V,I(AV)<=14A
80 300

70
250

60

200
50

EAV [mJ]
PD [W]

40 150

30
100

20

50
10

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

Tc [°C] starting Tch [° C]

Typical Output Characteristics Typical Transfer Characteristic

ID=f(VDS):80µs Pulse test,Tch=25°C ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
30
20V
28
10V
26
8V 7.5V
24
10
22
20
18
ID[A]
ID [A]

16
14 7.0V
1
12
10
8
VGS=6.5V
6
4
0.1
2
0
0 2 4 6 8 10 12 14 16 18 20 22 0 1 2 3 4 5 6 7 8 9 10
VDS [V] VGS[V]

Typical Transconductance Typical Drain-Source on-state Resistance

gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C
100 1.0

0.9
VGS=6.5V 7.0V 7.5V
0.8

0.7
10
RDS(on) [ Ω ]

0.6
gfs [S]

0.5 8V
10V
20V
0.4
1
0.3

0.2

0.1

0.1 0.0
0.1 1 10 0 5 10 15 20 25 30
ID [A] ID [A]

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2SK3505-01MR FUJI POWER MOSFET

Drain-Source On-state Resistance Gate Threshold Voltage vs. Tch

RDS(on)=f(Tch):ID=7A,VGS=10V VGS(th)=f(Tch):VDS=VGS,ID=1mA
1.2 7.0

1.1 6.5
6.0
1.0
5.5
0.9 max.
5.0

VGS(th) [V]
0.8
4.5
RDS(on) [ Ω ]

typ.
0.7 4.0
0.6 max. 3.5
3.0 min.
0.5
typ. 2.5
0.4
2.0
0.3
1.5
0.2
1.0
0.1 0.5
0.0 0.0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Tch [° C] Tch [° C]

Typical Gate Charge Characteristics Typical Capacitance

VGS=f(Qg):ID=14A, Tch=25°C C=f(VDS):VGS=0V,f=1MHz
24 10n

22

20 Vcc= 100V
Ciss
18 1n
250V
16 400V
14
VGS [V]

C [F]

12 100p
Coss
10

6 10p

4 Crss

0 1p
-1 0 1 2 3
0 10 20 30 40 50 60 70 80 10 10 10 10 10
Qg [nC] VDS [V]

Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID

IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
100

2
10
tr
td(off)
10
IF [A]

t [ns]

td(on)
1 tf
10

0
10

0.1
0 1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 10
VSD [V]
ID [A]

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2SK3505-01MR FUJI POWER MOSFET

Transient Thermal impedance

1
Zth(ch-c)=f(t) parameter:D=t/T
10
Zth(ch-c) [K/W]

0
10
0.5

0.2
0.1
-1 t
10 0.05 t
D=
T
0.02
T
0.01

-2 0
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t [s]

Maximum Avalanche Current Pulsewidth

2
IAV=f(tAV):starting Tch=25°C. Vcc=50V
10

Single Pulse
Avalanche current IAV [A]

1
10

0
10

-1
10

-2
10
-8 -7 -6 -5 -4 -3 -2
10 10 10 10 10 10 10
tAV [sec]

4
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