Professional Documents
Culture Documents
SEMIKRON DataSheet SKiiP 38NAB12T4V1 25231490
SEMIKRON DataSheet SKiiP 38NAB12T4V1 25231490
SEMIKRON DataSheet SKiiP 38NAB12T4V1 25231490
NAB
Features* Characteristics
• Trench 4 IGBTs Symbol Conditions min. typ. max. Unit
• Robust and soft switching freewheeling Inverter - IGBT
diodes in CAL technology
VCE(sat) IC = 100 A Tj = 25 °C 1.80 2.05 V
• Highly reliable spring contacts for
VGE = 15 V
electrical connections Tj = 150 °C 2.20 2.40 V
chiplevel
• UL recognized: File no. E63532
VCE0 Tj = 25 °C 0.80 0.90 V
chiplevel
Typical Applications Tj = 150 °C 0.70 0.80 V
• Inverter up to 41 kVA rCE VGE = 15 V Tj = 25 °C 10 12 mΩ
• Typical motor power 22 kW chiplevel Tj = 150 °C 15 16 mΩ
Remarks VGE(th) VGE = VCE, IC = 4 mA 5 5.8 6.5 V
• Max. case temperature limited to ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C 1 mA
TC=125°C Cies f = 1 MHz 6.15 nF
• Product reliability results valid for VCE = 25 V
Coes f = 1 MHz 0.41 nF
Tj≤150°C (recommended VGE = 0 V
Tj,op=-40...+150°C) Cres f = 1 MHz 0.35 nF
• For short circuit: Soft RGoff QG VGE = - 8 V...+ 15 V 565 nC
recommended RGint Tj = 25 °C 7.5 Ω
• MiniSKiiP “Technical Explanations” VCC = 600 V
td(on) Tj = 150 °C 160 ns
and “Mounting Instructions” are part of IC = 100 A
the data sheet. Please refer to both tr Tj = 150 °C 35 ns
RG on = 1 Ω
documents for further information. Eon Tj = 150 °C 11.2 mJ
RG off = 1 Ω
td(off) Tj = 150 °C 390 ns
tf Tj = 150 °C 75 ns
NAB
NAB
Typical Applications
• Inverter up to 41 kVA
• Typical motor power 22 kW
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤150°C (recommended
Tj,op=-40...+150°C)
• For short circuit: Soft RGoff
recommended
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
NAB
Fig. 1: Typ. output characteristic Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward characteristic
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic
Pinout
This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340.