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  • UFL200FA60P PDF, UFL200FA60P Descripción Electrónicos, UFL200FA60P Datasheet, UFL200FA60P View - ALLDATASHEET

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    UFL200FA60P pdf, UFL200FA60P Descripción Electrónicos, UFL200FA60P Datasheet, UFL200FA60P view ___ ALLDATASHEET ___

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    10 views8 pages

    UFL200FA60P PDF, UFL200FA60P Descripción Electrónicos, UFL200FA60P Datasheet, UFL200FA60P View - ALLDATASHEET

    Uploaded by

    César David Pedroza Díaz

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    © All Rights Reserved
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    ay VISHAY. UFL200FA60P Insulated Ultrafast Recti' s0T-227 PRODUCT SUMMARY te To2ns Tran at To = 105 °C 2008 Va eo0v Vishay Semiconductors ir Module, 200 A rearuncs FRE dts ® (Wisot = 2500 Vac) RoHS: Shere any se ET ca pe eo ‘+ Optimized for power conversion: Welding and industrial 'SMPS applications + Industry standard outine + Plug-in compatible with ther SOT-227 packages + Easy to assemble + Direct mounting to heatsink + UL approved file £78996 TAX + Compliant to ROHS directive 2002/95/EC DESCRIPTION The UFL2O0FASOP insulated modules integrate two state of the art Vishay Semiconductors ultrafast recovery rectifiers in the compact, industry standard SOT-227 package, The planar structure of the diodes, and the platinum doping life-time control, provide a ultrasaft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, de-to-de converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMURFI ABSOLUTE MAXIMUM RATINGS PARAMETER ‘SYMBOL TEST CONDITIONS: MAX. UNITS Cathode to anode voltage Ya 600 v ‘Continuous forward curent per diode c To=85°C 144 » ‘Single pulse forwara curent par diode ew | Toa 25°C 1000 ‘Maximum power dissipation per module Po | to=85°c 360 w Isolation voltage Vso. | Any terminal to ease, t= Tin 2500 v (Operating junction and storage temperatures | Tu, Tas ~56 10 175 *c ‘Document Number: 94551 Revision: 21-Jul-10 DiodesAmericastvishay.com, For technical questions within your region, please contact one of the following! DiodasEuropa@vshay.com ‘warwvishay.com — UFL200FA60P Vianay. Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A ELECTRICAL SPECIFICATIONS (T, = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST ONOTIONS van_[-We[ ax [ rs Cathode rod koa ae Van | = T000R 00 [ weattoa = [ae fa ieezioa fae pte] v Forward voriage New Ie = 100A, Ty = 125°C - 113 | 1.24 e=aoa = [sar [ass a= Vad os ea vests coat vm [eevee |e fw fw Tiron cpa Sse a DYNAMIG RECOVERY CHARACTERISTICS (7) = 25°C unas therwse specified) PARAMETER SYMBOL TEST CONDON wn [78 AK. [ Ts revesereory ne o ee —[e fet Poston ore ww PERE wow Fote tel, Tet vecz0oy arf es Tsao ee overse recovery charge On Ty= 125°C = 2086 | 3355 re THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMGOL TEST CONDONE van [ve | wae [ons Toreton sas single leg conducting - - es | ow Junction to case, Prese both leg conducting - - 028 | kw avs at Fes | Fa ast rs Te Nosrng pas aoa Tarihi questions iin juan, fess id ooo be owing Doan Raber SH 3 consents) mn Bannedan sa Boseaceamaayan Rana ae UFL200FA60P VISHAY. Vv Insulated Uttrafast Vishay Semiconductors Rectifier Module, 200 A 1000, 1000 = 4 Bo 3 2 os Zim Bow om & 100 200-300 ~—-400~—«500 600 g even votge Vy) g fig, 1 Typical Vato of Reverse Curent i sae 3 1000 5 5 5 to 3 i Bw § 1 3 eovon esas ‘ Forward Vatage Dmp-V.(V) 10 100 1000 rene on Fig. 1 - Typical Malar) ‘Drop Characteristics Fig. 2 - Typical Junction Capacitance vs. Reverse Voltage : 8 Boa & i i oe z (erm Reser) 2 oot 0.0001 0.001 001 01 1 10 1, Rectangular Pulse Duration (Seconds) Fig. 8 - Maximum Thermal impedance Znic Characteristics (Per Diode) ‘Document Number: 94551 Revlon: 21-10 For technical questions within your region, please contact one of the following! ‘wavwvishay.com ‘Diodes Amertcas®vishay.com, DiadesAsia@vishay.com, DiodesEuropa@vshay.com 3 UFL200FA6OP =. Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A ws 200 £10 5 é 2 © 00 2 2 5 3 50 F square wave (0-050) aT Sarees Snce searete (1 ° o 6 100 150 200 50 ‘erage Forward Curent = yy (AD ‘0 7000 iit ws Fg 4 Maximum Alowabe Case Temperate, Fi, 6- Typical Reverse Recovery Tne. dt ‘Noape Fomor rent Porton =” :° = 5 g& % 6 oa 80 75 10 128 180 Average Forward Curent (A) ‘00 “300 ist ns) Fa. - Forward Power Loss Characteristics Per Le 9.7 Typical tre Charge. lt note 1 Fol ved Te Ty =P Peas) xc Bu Forward power oss = nay

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