SLIP IN A PERFECT LATTICE

• If slip is assumed to occur by the translation of

one plane of atoms over another, it is possible to
make a reasonable estimate of the shear stress
required for such a movement in a perfect lattice.
• Consider two planes of atoms subjected to a
homogeneous shear stress.
• The shear stress is assumed to act in the slip
plane along the slip direction. The distance
between atoms in the slip directions is b, and the
spacing between adjacent lattice planes is a.
• The shearing stress is initially zero when the two
planes are in coincidence, and it is also zero when
the two planes have moved one identity distance
b
• Between these positions each atom is attracted
toward the nearest atom of the other row, so that
the shearing stress is a periodic function of the
displacement.
• As a first approximation, the relationship between shear stress and displacement can be
expressed by a sine function

where τm is the amplitude of the sine wave and b is the period.

• At small values of displacement, Hooke's law should apply.

• For small values of x/b, it can be written

• Combining these equations,

• As a rough approximation, b can be taken equal to a,

• The shear modulus for metals is in the range 20 to 150 GPa.
• The equation predicts that the theoretical shear stress will be in the range (3 to 30 GPa)
• However, actual values of the shear stress required to produce plastic deformation in
metal single crystals are in the range 0.5 to 10 MPa.
• Theoretical shear strength of metal crystals is at least 100 times greater than the
observed shear strength
• Tyson (using a computer solution of the interatomic force equations) predicted Tm =
G/16 for an fcc metal, G/8 for an NaCl structure, and G/4 for a covalently bonded
diamond structure.
• It must be concluded that a mechanism other than bodily shearing of planes of atoms is
responsible for slip.
SLIP BY DISLOCATION MOVEMENT
• The concept of the dislocation was first introduced to explain the discrepancybetween
thethe observed and theoretical shear strengths of metals.
• For the dislocation concept to be valid, it is necessary to prove that
• the motion of a dislocation through a crystal lattice requires a stress far smaller
than the theoretical shear stress, and
• that the movement of the dislocation produces a step, or slip band, at the free
surface.

• In a perfect lattice all atoms above and below the slip plane are in minimum energy
positions.
• When a shear stress is applied to the crystal, the same force opposing the movement acts
on all the atoms.
• When there is a dislocation in the crystal, the atoms away from the dislocation are still in
the minimum energy positions. At the dislocation only a small movement of the atoms is
required.
• the extra plane of atoms at the
edge dislocation initially is at 4.
• Under the action of the shear
stress, a very small movement of
atoms to the right will allow this
half plane to line up with the half
plane 5’ at the same time cutting
the half plane 5 from its neighbors
below the slip plane.
• The edge dislocation line has (a) Atom movements near dislocation in slip; (b)
movement of an edge dislocation.
moved from its initial position
between planes 4' and 5' to a new
position between planes 5' and 6’.
• Consider that plastic deformation is the
transition from an unslipped to a slipped
state
• The process is opposed by an energy barrier
ΔE
• To minimize the energetics of the process,
the slipped material will grow at the
expense of the unslipped region by the
advance of an interfacial region –
dislocations.
• To minimize the energy for the transition,
we expect the interface thickness w to be
narrow.
(a) Energy change from unslipped to slipped
• The smaller the width of the dislocation, state; (b) stages in growth of slipped region.
the lower is the interfacial energy.
• but the wider the dislocation, the lower is the equilibrium width of the dislocation is
the elastic energy of the crystal because determined by a balance between these
then the atomic spacing in the slip direction
is closer to its equilibrium spacing. two opposing energy changes.
• The force required to move a dislocation through the crystal lattice is called the
Peierls Nabarro force - the lattice friction stress as an exponential function of the
‘width of the dislocation’ and the Burgers vector.

• Peierls stress is the shear stress required to move a dislocation through a crystal
lattice in a particular direction
⁄ ⁄ ]

• where a is the distance between, slip planes and b is the distance between atoms in
the slip direction.

the equation cannot be used for precise calculations. However, it is accurate enough to show that the stress
needed to move a dislocation in a metal is quite low.
 Significance of Pierels Nabarro Force
• It shows that materials with wide dislocations
will require a low stress to move the
dislocations.
• when the dislocation is wide, the highly
distorted region at the core of the dislocation
is not localized on any particular atom in the
crystal lattice.
• In ductile metals the dislocation width is of
the order of 10 atomic spacings.
• in ceramic materials with directional covalent
bonds, the interfacial energy is high and the
dislocations are narrow and relatively
immobile.
⁄ ⁄ ]
 Extreme
situations
 Unrelaxed condition- stiff
 Smaller width of displacement
fields
  atomic adjustments required
(for any one atom) for
dislocation motion are large
 ‘Relaxed’ condition
 Large width of displacement
fields
  atomic adjustments required
for dislocation motion are small
The PN stress required to move a dislocation depends exponentially on the width of the
dislocation (w) & the modulus of the Burgers vector (b).
• Being an exponential function of both ‘w’ and ‘b’; PN stress is a sensitive function of these
factors
•  ‘w’ is determined by the bonding characteristics (metallic, ionic…)
 ‘b’ is determined by the crystal structure.
• PN stress provides a basis for the observation that slip occurs most readily on close-packed
planes in the close-packed directions.
• When the crystal structure is complex, without highly close-packed planes and directions,
dislocations tend to be immobile.

Hence,
► narrow dislocations are more difficult to move than wide ones
► dislocations with larger b are more difficult to move
 Dependence of width of the dislocation on bonding of crystals

 Nature of chemical bonding in the crystal determines the → extent of relaxation & the width of the dislocation
Covalent crystals
 Strong and directional bonds → small relaxation (low w) → high PN
 Usually fail by brittle fracture before PN is reached
Metallic crystals
 Weaker and non-directional bonds → large relaxation (high w) → low PN
 E.g. Cu can be cold worked to large strains
Ionic crystals

 Moderate and non- directional bonds

 Surface cracks usually lead to brittle fracture
 Large b (NaCl: b = 3.95Å) → more difficult to move

Intermetallic compounds / complex crystal structures

 Intermetallic compounds and complex crystal structures (Fe3C, CuAl2) do not have good slip systems →
favorable planes & directions → usually brittle Ordered compounds may have very large b
• The dislocation produces a slip offset of
length b, so that the shear strain is y = b/h.
• Since b is very small compared with L or h,
the displacement for a dislocation at an
intermediate position between x = 0 and x
= L would be proportional to the fractional
displacement x/L.
• The total displacement of the top of the crystal relative to the bottom for many
dislocations on many slip planes will be
where N is the total number of dislocations that have moved in the volume of the crystal.
∆
• The macroscopic shear strain is
̅
• If the average distance that dislocations have moved is , or
• Where, is the dislocation density
• The dislocation density is the total length of dislocation line per unit volume or,
alternatively, the number of dislocation times that cut through a unit cross-sectional area.
̅
• Shear-strain rate,
• where is the average dislocation velocity
• depend on stress, time, temperature, and prior thermomechanical history.
PN and CRSS
• There are two very similar quantities:
 Peierls stress (or PN stress or Lattice friction stress)
 Critical Resolved Shear Stress (CRSS)
• Both of them are stresses required to cause plasticity
 Peierls stress is a quantity defined at the microscopic level (at the level of the slip plane)
 CRSS is more at the macroscopic level (level of the specimen).

• The extent of slip in a single crystal depends on the magnitude of the

• shearing stress produced by external loads,
• the geometry of the crystal structure, and the
• orientation of the active slip planes with respect to the shearing stresses.
• Slip begins when the shearing stress on the slip plane in the slip direction reaches a
threshold value - critical resolved shear stress.
• The value of the critical resolved shear stress depends chiefly on composition and
temperature.
• The fact that different tensile loads are required to produce slip
in single crystals of different orientation can be rationalized by
a critical resolved shear stress; this was first recognized by
Schmid
• To calculate the critical resolved shear stress from a single
crystal tested in tension, it is necessary to know the orientation
with respect to the tensile axis of the plane on which slip first
appears and the slip direction
• Consider a cylindrical single crystal with cross-sectional area A
• The angle between the normal to the slip plane and the tensile
axis is ɸ, and the angle which the slip direction makes with the
tensile axis is .
• The area of the slip plane inclined at the angle ɸ will be A/cos
ɸ,
• the component of the axial load acting in the slip plane in the
slip direction is Pcos
• Therefore, the critical resolved shear stress is given by
Room-temperature slip systems and critical resolved
shear stress for metal single crystals