2SD288 NPN EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY POWER AMPLIFIER

*
TO-220

ABSOLUTE MAXIMUM RATINGS (TA=25oC)

Characteristic Symbol Rating Unit

Collector-Base Voltage VCBO 80 V

Collector-Emitter Voltage VCEO 55 V
Emitter-Base voltage VEBO 5 V
Collector Current (DC) IC 3 A
Collector Dissipation (Tc=25oC) PC 20 W
Junction Temperature Tj 150 C
o

o
Storage Temperature Tstg -50~150 C

ELECTRICAL CHARACTERISTICS (TA=25oC)

Characteristic Symbol Test Condition Min Typ Max Unit

Collector Cutoff Current ICBO VCB= 50V , IE=0 50 µA

DC Current Gain hFE1 VCE= 5V , IC=0.5A 40 240

Collector- Emitter Saturation Voltage VCE(sat) IC=1A , 1.0 V
Current Gain Bandwidth Product IB=0.1A

Wing Shing Computer Components Co., (H.K)Ltd. TeL(852)2341 9276 Fax:(852)2797 8153.
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