NEOS NV IMAGE INTENSIFIER CANEOS NVis a distributor of components for night vision devices, the main partner of the largest scientific and manufacturing enterprise in Russia Exran FEP. NEOS NV has exclusive distributor rights for all the Goods produced by Ekran FEP, Close collaboration between distributor and experienced manufacturer is aimed not only for the maximurn products promotion in the night vision. market, but also to achieve long-term commercial cooperation all around. the world. The unique feature of Ekran FEP is that the company is the only rnanufs turer in Russia which mastered the serial production not only of image intensifier tubes (IIT), but also the main components for it such as micro- channel plates (MCP) and fiber optic elements (FOE) NEOS NV offers the world market wide range of IIT, produced by Ekran FEP, counting more than 60 modifi photocathode, and for the most advanced consumers IIT with GaAs photocathode of 3 and filrless 4 Gen for different purposes: special and commercialones. tions of 1 and 2+ Gen with rnultialkal ‘Every day we are setting the new goals for ourselves, trying to achieve best quality of the manufactured product, expending sales geography both in the Russian and foreign market What is more important, that we create a unified tearn at our enterprise, which is ready to achieve new accomplish: ments in the coming years and completely is open up for new projects, production approaches to night vision devices for the world” NEOS NV and Ekran FEP teFilmless GEN 4 ‘options: ie uv fast augetng * nigh shock resistance + extra pure visual area FEP Features: Enhanced GaAs filmless intensifier with increased parameters Technical characteristics: FOM — 2 040 and more Resolution - 72 lp/mm and more SNR* - 30 and more EBL. ~ 0.15 ux Sensitivity — 2 400 pA/im Improved MTFGEN 3 EPM228G intensifier options: P22, PAS, Pas ‘extemal gain contol \ ra fast auto-gating S high shock resstance +> fora pure visual area + ‘Specfeations| Epwz296-1-26 | _EPM2286-10-71_ | _EPM226G-19-35, Description Inverter 180" Glass gis Noninveter ‘Dimensions rm Ox675031 Cer Ouest Fhotoeathode wear 73 Photocathode ype Gans Matera or ARE Gextamen seam! ] Ghanian se rar ulput window Gkumeineriamn | FOE wa ce Parameter Minimum Typical Senstviy. All 1900 2400) Radiant 50 nr 7 Radian 80 250 Resolution pin @ o SNR. 25 2 can {60 000 “on Buyers request FoM 75 1850 EB, ok, max 025, Tepat volage, V zeae Trp erent a me 2GEN 3, EPM222G intensifier Options: 22, Pas, Pas YJ external gain control Vo rata to-gating high shock resistance + ext pure visual area FEP Speci EPMa226" EpMe226-i0-m" | EPMz226-13-95 ciption Inverse 180" asst glass Non-inverer Dimensions, mim 02675" 31 oun on Protocathoge wetar 7 Siometer Photocathode Wee Gans 900 2400) Resolution pine c a sn 28 com 0.000 “an Buyer's request FoM 138 EB, wie max 025 Input vokage V Input caren mA, max 25GEN 2+ EPM215G intensifier ‘options: 22, Pas, Pas ‘external gain contol lva-tastauto-gating high shock resistance extra pure visual area Specifications EpMaisG-11-26 | _EPMaiSG-0-n | _ EPM2ISG-13-35, Description Invert 180" lass to glass Non-inverer Dimensions min @ 36753 Oaane 01331 Phowweathods seta 7 Photoeathode type Mulia Wataral ot npatT | Sica eer utput window or meting ins cas oor ‘Sensi, BAN 300 Ragank (50 S 30 Resolation Iplmm e a SNR. 6 2 Gan 20 000-30 000 "on Buyer's request EB, yh max 00 Input vokage, ¥ Trp current, mA max 2sAdvanced GEN EP229G HIGH-RESOLUTION intensifier options pan. Pas Pas = ulva fast auto-gating high shock resistan — extra pure vival ea FEP ‘Speciiatons E2296 Description invertor Magneation, min 055 Dimensions, mm 260031 Contacts ype Flying leads Photocathode useful diameter, mm ° Protocathode be Mulla Material of input / output window ‘lass thickness 3, 7m / Glass thickness 12 Parameters Minimum Typical aR PToeTOgS oY spo 00 Radiant (650 nn), MAM ° 2 Ling resolution lpm 37 7% Input voltage, ¥ Bae Input curent, mA mae 30 ‘weigh max 05 MITE A 1500)e)3\P-a5 EPM221G intensifier Options: P22, P45, Pas extemal gain Specfeations| ewan EPM2IG-00-n| | _EPMIZIG-3-95, Description Inverter 180" lass to gee Non-inverter Dimensions rm 0367563 ouax22 Co Gimeter tm a Photocathode type alah Tateral oP RRRT Tas ees utput window ‘cu 650 » 30 Resolution pin a @ SNR 78 2 ain 20.000-30 000%an Buyer’ request EB lk max ons Trp voltage. V 236 Input eurrere. A ax 28Purity of visual area Ekran FEP IIT's purity of visual area corresponds to the data statedin the table below: Sem B56 247 mmMicrochannel plates (MCP) Ekran FEP produces such strategically important components for IIT as:microchannel plate (MCP) and fiber optic element (FOE) - by itself That allows to perform everyday throughout multi-stage quality controlat each stage of production process. ‘The development of MCP and FOE production technologies allows to improve successfully the quality of the final product. Own components satisfy nearly all basic production necessities that makes possible to be more independent and to control the costs and offer the market stable and attractive prices. MCP is a main IIT component which multiply the input electron stream. Aglass disk with a diameter of about 24 mm and a thickness of 250- 460 um consisting of more than 2 million tiny hollow glass tubes soldered together. The technology allows to produce MCP with a channel diameter fromS um.Fiber optic element (FOE) FOE ~ a glass disk consisting of optical fibers with diameter of about 5 um soldered together and intended for an image transfer- ring from one surface to another. Generally used as an input / output windows of an IIT or other electro-optical systems. Ekran FEP produces number of FOE modifications, including FOE with straight or inverting image transfer and having different surface radius.Science & Technology Ekran FEP actively develops its scientific activities by working daily to improve the current production technologies and discover new directions ‘The main Ekran FEP partner in the field of science and innovation is SBRAS*. R&D Today, the basic areas of RED program are: + improvernent of the production technology of IIT Gen 24, 3and Gen 4 without ion barrier film: ‘+ new photoemission coatings; In collaboration with Budker Institute of Nuclear Physics of SB RAS: * for modemization of MCP-PMT intended for research in nuclear physics + for development of square-shaped MCP-PMT with high spatial resolution of more than 64 pixels; In collaboration with Rzhanov Institute of Serniconductor Physics SB RAS, + for development of IIT operating in the UV-, short-, mediurn- andlong-wave infrared ranges; + fordevelopmentof Image type 3D spin-detector. To leam more about Ekran FEP scientific activity please visit section "RED" of wwwekranfep.ru EDUCATION Ekran FEP actively trains highly specialized personnel and cooper ates with State technical educational institutions, + Siberian Branch of the Russian Academy of Seances‘The present catalog is an advertising material. ‘The information contained is for informational purposes only and is subject to change without prior notification.NEOS NV Sa aNAn osu acoltt neos.fep@gmail.com [ei kyPieyrzs